Abstract: In one embodiment, the image sensor includes a first photodiode configured to convert an optical signal into a photocharge, a sensing node configured to store the photocharge of the first photodiode, and a circuit configured to selectively output an electrical signal corresponding to the photocharge at the sensing node on an output line. The circuit is connected to at least a first conductive contact, and the output line is disposed between the sensing node and the first conductive contact.

Abstract: Disclosed herein is a method of synthesizing nuclear reactor power distribution using an optimized nonlinear basis function by means of combining signals of neutron detectors provided inside or outside a nuclear reactor. The method includes searching an optimized basis function combination, without determining previously a shape of a basis function, in such a way that error occurrence is minimized, and determining a shape of a synthesis function. When searching the optimized basis function combination and determining the shape of the synthesis function, the following equation is used. FZ ? ( Z i ) = a 0 + ? i = 1 n ? a i ? ? i + ? i = 1 n ? ? j = 1 n ? a ij ? ? i ? ? j + ? i = 1 n ? ? j = 1 n ? ? k = 1 n ? a ijk ? ? i ? ? j ? ? k + … (here, FZ(Zi): a power distribution value at position Zi, ?i, ?j, ?k: signals of detectors at respective positions).

Abstract: The image sensor and an image sensing system including the same are provided. The image sensor includes a semiconductor substrate, a pixel array formed at a pixel area located in the semiconductor substrate and comprising a plurality of photoelectric converts, a plurality of driver circuits formed at a circuit area defined in the semiconductor substrate. The image sensor includes at least one heat blocker or heat shield. The at least one heat blocker may be formed between the pixel area and the circuit area in the semiconductor substrate. The heat blocker or heat shield may block or dissipate heat generated at the circuit area from being transferred to the pixel area through the semiconductor substrate. The heat blocker or heat shield may be used in image sensors using a back-side illumination sensor (BIS) structure or image sensors using a silicon on insulator (SOI) semiconductor substrate.

Abstract: An image sensor includes a conductive well in a semiconductor substrate, a photo sensitive device (PSD) in the semiconductor substrate below the conductive well, the PSD and conductive well overlapping each other, and a charge transmission unit in the semiconductor substrate and adjacent to the conductive well, the charge transmission unit having a structure of a recessed gate and being positioned in a recess region of the semiconductor substrate.

Abstract: A cuff for a blood pressure meter which is jointed to a blood pressure for measuring blood pressure and is worn on the body to compress a blood pressure measurement site, and which comprises: a cuff band which is worn around the blood pressure measurement site of the body and is provided with an expansion bladder that expands on the inside; a fluid supply apparatus which is connected to the cuff band and supplies a fluid so as to make the expansion bladder expand; and a bladder separator which is provided in the cuff band and splits the expansion bladder, that is expanded by means of the fluid supply apparatus, into at least two or more pats so as to effect split expansion of the same.

Abstract: The present invention relates to a device for examining nerve function. In order to examine the function of a nerve of the human body, the device for examining nerve function of the present invention includes: at least one stimulator for stimulating the human body; and a stimulator-fixing member having a form corresponding to the hands or feet of the human body, wherein the stimulator is located at one side of the simulator-fixing member so as to fix the stimulator to the hands or feet of the human body. The device for examining nerve function of the present invention further includes at least one blood-circulation detection sensor fixed at the stimulator-fixing member. According to the present invention, since the degree of hypoesthesia is examined through the stimulation of the stimulator, test accuracy and reliability may be greatly improved and it is possible to systematically and actively determine a diagnosis and course of treatment for a patient having diabetes or spinal nerve damage, e.g.

Abstract: In one embodiment, the image sensor includes a first photodiode configured to convert an optical signal into a photocharge, a sensing node configured to store the photocharge of the first photodiode, and a circuit configured to selectively output an electrical signal corresponding to the photocharge at the sensing node on an output line. The circuit is connected to at least a first conductive contact, and the output line is disposed between the sensing node and the first conductive contact.

Abstract: A fuel cell includes a substrate having a pair of grooves, an electrolyte membrane lying on the substrate so as to define a pair of flow channels, and catalyst-bearing current collector layer sections disposed on the inner wall of the grooves or the inside surface of the electrolyte membrane defining the channels. A fuel liquid flows through the first channel to undergo anodic reaction, an oxidant liquid in the form of an aqueous hydrogen peroxide solution flows through the second channel to undergo cathodic reaction, and hydrogen ions traverse the electrolyte membrane.

Abstract: In an example embodiment, the backside-illuminated image sensor includes a substrate including a plurality of photoelectric conversion devices being separated by a semiconductor. The backside-illuminated sensor further includes a transparent electrode layer or a metal layer formed on a surface of a substrate. As a positive bias voltage or a negative bias voltage is applied to the transparent electrode layer or the metal layer, generation of dark current in the surface of the silicon substrate may be reduced or suppressed.

Abstract: An image sensor includes a plurality of wells for isolating a plurality of photodiodes from each other. Each of the wells includes a P-type well region and an N-type well region configured to receive a positive bias voltage. The image sensor provides a clearer image by suppressing a blooming effect and a dark current.

Abstract: An image sensor includes a plurality of photodiodes, a plurality of wells isolating the plurality of photodiodes from each other, and a plurality of conductive layers or conductive lines for suppressing a dark current generated at the surface of the photodiodes and in the wells in response to a bias voltage.

Abstract: The image sensor and an image sensing system including the same are provided. The image sensor includes a semiconductor substrate, a pixel array formed at a pixel area located in the semiconductor substrate and comprising a plurality of photoelectric converts, a plurality of driver circuits formed at a circuit area defined in the semiconductor substrate. The image sensor includes at least one heat blocker or heat shield. The at least one heat blocker may be formed between the pixel area and the circuit area in the semiconductor substrate. The heat blocker or heat shield may block or dissipate heat generated at the circuit area from being transferred to the pixel area through the semiconductor substrate. The heat blocker or heat shield may be used in image sensors using a back-side illumination sensor (BIS) structure or image sensors using a silicon on insulator (SOI) semiconductor substrate.

Abstract: An image sensor includes a conductive well in a semiconductor substrate, a photo sensitive device (PSD) in the semiconductor substrate below the conductive well, the PSD and conductive well overlapping each other, and a charge transmission unit in the semiconductor substrate and adjacent to the conductive well, the charge transmission unit having a structure of a recessed gate and being positioned in a recess region of the semiconductor substrate.

Abstract: Provided are a CMOS image sensor and a driving method thereof. The CMOS image sensor may include a photodetector disposed in a semiconductor substrate to accumulate photocharges, a charge transfer element configured to control transfer of the photocharges accumulated in the photodetector, a detecting element configured to detect the photocharges transferred by the charge transfer element, and a well driving contact configured to increase a potential difference between the photodetector and the detecting element while the photocharges are transferred.

Abstract: Provided is a pixel structure of a CMOS image sensor. The pixel structure may include a semiconductor substrate, a photo diode, and a color filter. The photo diode may have a trench structure formed in the semiconductor substrate. The color filter may be formed in the trench structure. The color filter may be formed by filling a material in the trench structure using a gap-fill process. The material in the trench structure may transmit light having a wavelength within a predetermined or given range. Because the color filter of the pixel structure of the CMOS image sensor may be formed in the photo diode having the afore-mentioned trench structure, the height of the pixel may be decreased, and the efficiency of the output signal and the color sensitivity may be increased.

Abstract: CMOS image sensors and related methods of fabricating CMOS image sensors are disclosed. Fabrication of a CMOS image sensor can include forming a first impurity region having a first conductivity type in a semiconductor substrate. A second impurity region having a second conductivity type is formed in the semiconductor substrate adjacent to the first impurity region. A third impurity region having the first conductivity type is formed in the semiconductor substrate and located below the second impurity region. A transfer gate is formed on the semiconductor substrate and at least partially overlaps the first, second, and third impurity regions. A photo sensitive device is formed in the semiconductor substrate and adjacent to one side of the transfer gate. A floating diffusion region is formed in the semiconductor substrate and located adjacent to an opposite side of the transfer gate from the photosensitive device.

Abstract: A cathode catalyst for a fuel cell is inexpensive and has high durability against methanol. A method of manufacturing and fixing the cathode catalyst, and a fuel cell including it, are disclosed. The cathode catalyst includes a compound selected from the group consisting of PdSn, PdAu, PdCo, PdWO3, and mixtures thereof. The present invention can provide a non-platinum-based cathode catalyst as a substitute for a platinum catalyst, the cathode catalyst having a low cost and improved catalyst activity, thereby contributing to popular use of a fuel cell. In addition, since the cathode catalyst of the present invention has high durability against methanol and can thereby be used with a fuel in a high concentration, it can increase the energy density of a direct methanol fuel cell (DMFC).

Abstract: Example embodiments may be directed to CMOS image sensors and image sensing methods selecting a path for photocurrent according to the quantity or amount of incident light. The CMOS image sensor may include a pixel array comprised of a plurality of pixel pairs. A pixel pair may include a first pixel, including a first photo diode, a first pair of transistors, and a first floating diffusion node having a first capacitance. The pixel pair may further include a second pixel, including a second photo diode, a second pair of transistors, and a second floating diffusion node having a second capacitance. A first one of the first pair of transistors may be connected between the first photo diode and the first floating diffusion node. A second one of the first pair of transistors may be connected between the first photo diode and the second floating diffusion node. A first one of the second pair of transistors may be connected between the second photo diode and the second floating diffusion node.

Abstract: A pixel circuit of an image sensor includes a photodiode that generates photocharges corresponding to light input to the photodiode; a transfer transistor that transfers the photocharges to a floating diffusion node in response to a transfer control signal; a reset transistor that transfers a power voltage to the floating diffusion node in response to a reset control signal; a signal output unit that outputs a voltage signal corresponding to a voltage of the floating diffusion node in response to a select control signal; and one or more boosting capacitors connected between a gate of the transfer transistor and the floating diffusion node. The reset transistor is an enhancement type MOSFET. A method of driving the pixel circuit and an image sensor are also disclosed.

Abstract: A fuel cell includes a substrate having a pair of grooves, an electrolyte membrane lying on the substrate so as to define a pair of flow channels, and catalyst-bearing current collector layer sections disposed on the inner wall of the grooves or the inside surface of the electrolyte membrane defining the channels. A fuel liquid flows through the first channel to undergo anodic reaction, an oxidant liquid in the form of an aqueous hydrogen peroxide solution flows through the second channel to undergo cathodic reaction, and hydrogen ions traverse the electrolyte membrane.