Patents by Inventor Jong Heon Yang
Jong Heon Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8263964Abstract: Provided are three-dimensional (3D) nanodevices including 3D nanostructures. The 3D nanodevice includes at least one nanostructure, each nanostructure including an oscillation portion floating over a substrate and support portions for supporting both lengthwise end portions of the oscillation portion, supports disposed on the substrate to support the support portions of each of the nanostructures, at least one controller disposed at an upper portion of the substrate, a lower portion of the substrate, or both the upper and lower portions of the substrate to control each of the nanostructures, and a sensing unit disposed on each of the oscillation portions to sense an externally supplied adsorption material. Thus, unlike in a typical planar device, generation of impurities between a nanodevice and a substrate can be reduced, and mechanical vibration can be caused.Type: GrantFiled: May 19, 2008Date of Patent: September 11, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Han Young Yu, Byung Hoon Kim, An Soon Kim, In Bok Baek, Chil Seong Ah, Jong Heon Yang, Chan Woo Park, Chang Geun Ahn
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Patent number: 8241939Abstract: A method for manufacturing a biosensor includes forming a silicon nanowire channel, etching a first conductivity-type single crystalline silicon layer which is a top layer of a Silicon-On-Insulator (SOI) substrate to form a first conductivity-type single crystalline silicon line pattern, doping both sidewalls of the first conductivity-type single crystalline silicon line pattern with impurities of a second conductivity-type opposite to the first conductivity-type to form a second conductivity-type channel, forming second conductivity-type pads for forming electrodes at both ends of the first conductivity-type single crystalline silicon line pattern, forming, in an undoped region of the first conductivity-type single crystalline silicon line pattern, a first electrode for applying a reverse-bias voltage to insulate the first conductivity-type single crystalline silicon line pattern and the second conductivity-type channel from each other, and forming second electrodes for applying a bias voltage across the secType: GrantFiled: July 24, 2008Date of Patent: August 14, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Chan Woo Park, Chang Geun Ahn, Jong Heon Yang, In Bok Baek, Chil Seong Ah, Han Young Yu, An Soon Kim, Tae Youb Kim, Moon Gyu Jang, Myung Sim Jun
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Publication number: 20120142017Abstract: Disclosed is a biosensor device, comprising: a capillary tube with probe molecules immobilized on the inner wall surface thereof, and a liquid sample containing target molecules, said biosensor device being characterized in that a contact angle between the inner wall surface of the capillary tube and the liquid sample changes because of the specific interaction between the probe molecules and the target molecules, which leads, in turn, to a change in the height of the liquid sample in the capillary tube.Type: ApplicationFiled: November 4, 2011Publication date: June 7, 2012Applicant: Electronics and Telecommunications Research InstituteInventors: Chan-Woo PARK, Jong-Heon Yang, Chil-Seong Ah, Wan-Joong Kim, Chang-Geun Ahn, Gun-Yong Sung
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Publication number: 20120143513Abstract: Provided are a bio sensor chip and a reader thereof. The bio-sensor chip is optically addressed. The bio-sensor chip includes a word line control circuit and a bit line control circuit controlled by light provided from the bio-sensor chip reader. The bio-sensor chip does not require a peripheral circuit for driving word lines and bit lines, simplifying a fabrication process and reducing the area of the chip.Type: ApplicationFiled: August 26, 2011Publication date: June 7, 2012Applicant: Electronics and Telecommunications ResearchInventors: Jong-Heon YANG, Chang-Geun Ahn, Chan Woo Park, Chil Seong Ah, Wan Joong Kim, Kwang Hyo Chung, Yo Han Choi, Gun Yong Sung
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Patent number: 8182582Abstract: Provided are gas storage medium, a gas storage apparatus having the same and a method thereof. The gas storage medium includes a plurality of material layers each having a variable valence, wherein each of the material layers includes redundant electrons that are not participated in chemical bonding.Type: GrantFiled: December 6, 2007Date of Patent: May 22, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Han-Young Yu, Ansoon Kim, Jong-Heon Yang, In-Bok Baek, Chang-Geun Ahn, Chil-Seong Ah, Chan-Woo Park, Seongjae Lee, Taehyoung Zyung
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Patent number: 8169006Abstract: Provided is a bio-sensor chip. The bio-sensor chip includes a sensing part, a board circuit part, a channel part, and a cover. In the sensing part, a target material and a detection material interact with each other to detect the target material. The board circuit part is electrically connected to the sensing part. The channel part provides a solution material containing the target material into the sensing part. The cover is coupled to the board circuit part to cover the channel part and the sensing part.Type: GrantFiled: September 16, 2009Date of Patent: May 1, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Taeyoub Kim, Jong-Heon Yang, Chang-Geun Ahn, Chan Woo Park, Chil Seong Ah, Ansoon Kim, In Bok Baek, Gun Yong Sung, Seon Hee Park
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Patent number: 8163240Abstract: A detection device and system are provided. The detection device includes a detection capacitor and a Field Effect Transistor (FET). The detection capacitor has a reactive material layer reacting to a specific functional group in a fluid, and first and second electrodes disposed on the both surfaces of an insulating layer, and the FET has a source electrode connected with the second electrode, a gate electrode connected with the first electrode, and a drain electrode. Here, the insulating layer of the detection capacitor is thicker than a gate insulating layer of the FET.Type: GrantFiled: June 13, 2008Date of Patent: April 24, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Chang Geun Ahn, Chan Woo Park, Jong Heon Yang, In Bok Baek, Chil Seong Ah, Han Young Yu, An Soon Kim, Tae Youb Kim, Moon Gyu Jang, Seon Hee Park
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Patent number: 8164123Abstract: Provided are a biosensor and a method of driving the same. The biosensor includes a transistor including a substrate including a source, a drain, and a channel formed between the source and the drain, a gate insulating layer formed on the channel, and a source electrode and a drain electrode respectively connected with the source and the drain, a fluid line for covering the transistor to have an inner space together with the transistor and in which a sample solution including target molecules flows, a reference electrode formed on an inner wall of the fluid line, and a probe molecule layer attached on the reference electrode and reacting with the target molecules. Accordingly, the reference electrode is formed on the inner wall of the fluid line, enabling miniaturization of the bio device.Type: GrantFiled: February 11, 2010Date of Patent: April 24, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Chan Woo Park, Chang Geun Ahn, Chil Seong Ah, Tae Youb Kim, An Soon Kim, Jong Heon Yang, Gun Yong Sung
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Publication number: 20120070910Abstract: Provided is a microanalysis method and system using a Field Effect Transistor (FET). The microanalysis method includes a channel region having a receptor molecule fixed; forming a nano-particle conjugate in the channel region by supplying a sample for test and the nano-particle conjugate to the FET; growing a probe material on the channel region; and measuring a current flowing through the channel region, wherein the receptor molecule is a material that is selectively bonded to a target molecule in the sample for test.Type: ApplicationFiled: September 15, 2011Publication date: March 22, 2012Applicant: Electronics and Telecommunications Research InstituteInventors: Chil Seong Ah, Jong-Heon Yang, Chan Woo Park, Chang-Geun Ahn, Gun Yong Sung
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Patent number: 8119430Abstract: Provided are a method of manufacturing a semiconductor nanowire sensor device and a semiconductor nanowire sensor device manufactured according to the method. The method includes preparing a first conductive type single crystal semiconductor substrate, forming a line-shaped first conductive type single crystal pattern from the first conductive type single crystal semiconductor substrate, forming second conductive type epitaxial patterns on both sidewalls of the first conductive type single crystal pattern, and forming source and drain electrodes at both ends of the second conductive type epitaxial patterns.Type: GrantFiled: June 30, 2009Date of Patent: February 21, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Chan-Woo Park, Chang-Geun Ahn, Jong-Heon Yang, In-Bok Baek, Chil-Seong Ah, An-Soon Kim, Tae-Youb Kim, Gun-Yong Sung, Seon-Hee Park
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Publication number: 20120015467Abstract: A biosensor using a nanodot and a method of manufacturing the same are provided. A silicon nanowire can be formed by a CMOS process to reduce manufacturing costs. In addition, an electrically charged nanodot is coupled to a target molecule to be detected, in order to readily change conductivity of the silicon nanowire, thereby making it possible to implement a biosensor capable of providing good sensitivity and being manufactured at a low cost.Type: ApplicationFiled: September 22, 2011Publication date: January 19, 2012Applicant: Electronics and Telecommunications Research InstituteInventors: Tae Youb KIM, Chil Seong AH, Chang Geun AHN, Han Young YU, Jong Heon YANG, Moon Gyu JANG
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Patent number: 8058673Abstract: A biosensor using a nanodot and a method of manufacturing the same are provided. A silicon nanowire can be formed by a CMOS process to reduce manufacturing costs. In addition, an electrically charged nanodot is coupled to a target molecule to be detected, in order to readily change conductivity of the silicon nanowire, thereby making it possible to implement a biosensor capable of providing good sensitivity and being manufactured at a low cost.Type: GrantFiled: September 29, 2008Date of Patent: November 15, 2011Assignee: Electronics and Telecommunications Research InstituteInventors: Tae Youb Kim, Chil Seong Ah, Chang Geun Ahn, Han Young Yu, Jong Heon Yang, Moon Gyu Jang
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Patent number: 8022444Abstract: Provided are a biosensor with a silicon nanowire and a method of manufacturing the same, and more particularly, a biosensor with a silicon nanowire including a defect region formed by irradiation of an electron beam, and a method of manufacturing the same. The biosensor includes: a silicon substrate; a source region disposed on the silicon substrate; a drain region disposed on the silicon substrate; and a silicon nanowire disposed on the source region and the drain region, and having a defect region formed by irradiation of an electron beam. Therefore, by irradiating a certain region of a high-concentration doped silicon nanowire with an electron beam to lower electron mobility in the certain region, it is possible to maintain a low contact resistance between the silicon nanowire and a metal electrode and to lower operation current of a biomaterial detection part, thereby improving sensitivity of the biosensor.Type: GrantFiled: August 20, 2008Date of Patent: September 20, 2011Assignee: Electronics and Telecommunications Research InstituteInventors: Tae Youb Kim, Nae Man Park, Han Young Yu, Moon Gyu Jang, Jong Heon Yang
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Publication number: 20110194976Abstract: A detection device and system are provided. The detection device includes a detection capacitor and a Field Effect Transistor (FET). The detection capacitor has a reactive material layer reacting to a specific functional group in a fluid, and first and second electrodes disposed on the both surfaces of an insulating layer, and the FET has a source electrode connected with the second electrode, a gate electrode connected with the first electrode, and a drain electrode. Here, the insulating layer of the detection capacitor is thicker than a gate insulating layer of the FET.Type: ApplicationFiled: June 13, 2008Publication date: August 11, 2011Applicant: Electronics and Telecommunications Research InstituteInventors: Chang Geun Ahn, Chan Woo Park, Jong Heon Yang, In Bok Baek, Chil Seong Ah, Han Young Yu, An Soon Kim, Tae Youb Kim, Moon Gyu Jang, Seon Hee Park
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Publication number: 20110193052Abstract: Provided are three-dimensional (3D) nanodevices including 3D nanostructures. The 3D nanodevice includes at least one nanostructure, each nanostructure including an oscillation portion floating over a substrate and support portions for supporting both lengthwise end portions of the oscillation portion, supports disposed on the substrate to support the support portions of each of the nanostructures, at least one controller disposed at an upper portion of the substrate, a lower portion of the substrate, or both the upper and lower portions of the substrate to control each of the nanostructures, and a sensing unit disposed on each of the oscillation portions to sense an externally supplied adsorption material. Thus, unlike in a typical planar device, generation of impurities between a nanodevice and a substrate can be reduced, and mechanical vibration can be caused.Type: ApplicationFiled: May 19, 2008Publication date: August 11, 2011Applicant: Electronics and Telecommunications Research InstitInventors: Han Young Yu, Byung Hoon Kim, An Soon Kim, In Bok Baek, Chil Seong Ah, Jong Heon Yang, Chan Woo Park, Chang Geun Ahn
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Publication number: 20110180856Abstract: Provided is a sensing device, which includes a reactive material layer (260) responding to a specific functional group in a fluid, a sensing capacitor (B) including first and second electrodes disposed on and under an insulating layer (230), the first electrode being disposed under the reactive material layer (260), and a field effect transistor including a gate electrode connected with the first electrode of the sensing capacitor. Here, the reactive material layer (260) is formed in a conductive three-dimensional structure to widen a surface area. Thus, the sensing device may have high sensitivity by maximizing a capacitor sharing effect and a change in voltage amount applied to a gate, which may be caused by widening a surface area of the conductive three-dimensional structure with respect to the fluid flow.Type: ApplicationFiled: May 27, 2009Publication date: July 28, 2011Applicant: Electronics and Telecommunications Research InstituteInventors: Chang Geun Ahn, Chan Woo Park, Jong Heon Yang, In Bok Baek, Chil Seong Ah, An Soon Kim, Tae Youb Kim, Gun Yong Sung
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Patent number: 7982231Abstract: A silicon light emitting diode capable of effectively utilizing light radiated toward the lateral side of a substrate by including a side reflecting mirror is provided. The silicon-based light emitting diode includes a p-type silicon substrate having a plurality of grooves, a light emitting diode layer formed on each of the grooves of the silicon substrate, the light emitting diode layer including an active layer, an n-type doped layer, and a transparent electrode layer, and a metal electrode including a lower metal electrode formed on the bottom surface of the p-type silicon substrate and an upper metal electrode formed on the top surface of the transparent electrode layer. The lateral surface of each of the grooves is separated from the light emitting diode layer and used as a reflecting mirror. The lateral surface is referred to as the side reflecting mirror.Type: GrantFiled: April 25, 2006Date of Patent: July 19, 2011Assignee: Electronics and Telecommunications Research InstituteInventors: Tae-Youb Kim, Nae-Man Park, Gun-Yong Sung, Jong-Heon Yang
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Publication number: 20110165557Abstract: Provided are an apparatus and method for detecting biomolecules. The apparatus includes a FET having a substrate, a source electrode, a drain electrode, a channel region between the source and drain electrodes, and probe molecules fixed to the channel region, wherein the source and drain electrodes are separated on the substrate, a microfluid supplier selectively supplying one of a reference buffer solution of low ionic concentration and a reaction solution of high ionic concentration containing target molecules, to the channel region of the FET to which the probe molecules are fixed, and a biomolecule detector detecting the target molecules by measuring a first current value of the channel region of the FET, and a second current value of the channel region of the FET to which the target molecules and the probe molecules that bind to each other in the reaction solution of high ionic concentration are fixed.Type: ApplicationFiled: November 20, 2008Publication date: July 7, 2011Applicant: Electronics and Telecommunications Research InstituteInventors: Chil-Seong Ah, Ansoon Kim, Chan-Woo Park, Chang-Geun Ahn, Jong-Heon Yang, In-Bok Baek, Taeyoub Kim, HyeKyoung Yang, Gun-Yong Sung, Seon-Hee Park, Han-Young Yu, Moon-Gyu Jang
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Publication number: 20110151139Abstract: A method for selectively functionalizing a non-modified solid surface to create a photoresponsive coating layer includes: functionalizing a non-modified solid surface only, which is not oxidized and nitrified, with hydrogen; forming an EGPA coating layer on the non-modified solid surface functionalized with hydrogen using light; forming an EGA coating layer by removing an amine protecting group or an amine salt from the EGPA coating layer; and forming a coating layer having a photoresponsive functional group on the non-modified solid surface using the EGA coating layer.Type: ApplicationFiled: November 11, 2010Publication date: June 23, 2011Applicant: Electronics and Telecommunications Research InstituteInventors: An Soon KIM, Wan Joong Kim, Chil Seong Ah, Chan Woo Park, Jong Heon Yang, Tae Youb Kim, Chang Geun Ahn, Gun Yong Sung
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Publication number: 20110139637Abstract: Provided are a method and apparatus for measuring an isoelectric point using a field effect transistor. The method includes providing a field effect transistor including a substrate, source and drain electrodes disposed on the substrate and spaced apart from each other, and a channel region between the source and drain electrodes, providing a first electrolyte solution having a first concentration to the channel region of the field effect transistor and measuring a first current value of the channel region between the source and drain electrodes, providing a second electrolyte solution having a second concentration greater than the first concentration and measuring a second current value of the channel region between the source and drain electrodes, and determining as the isoelectric point of the field effect transistor or a material disposed on the field effect transistor using a difference between the first and second current values.Type: ApplicationFiled: December 16, 2008Publication date: June 16, 2011Applicant: Electronics and Telecommunications Research InstituteInventors: Chil Seong Ah, Ansoon Kim, Chan Woo Park, Chang-Geun Ahn, Jong-Heon Yang, In Bok Baek, Taeyoub Kim, Gun Yong Sung, Seon-Hee Park, Han Young Yu