Patents by Inventor Jong-hyurk Park

Jong-hyurk Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080128285
    Abstract: An electrochemical gas sensor and a method of manufacturing the same are provided. The electrochemical gas sensor includes: a substrate; an electrode patterned on the substrate; a solid electrolyte layer having proton conductivity formed on the substrate having the patterned electrode; and a hydrophobic microporous membrane formed on the solid electrolyte layer. The gas sensor chip is easily integrated with a driving circuit and uses a solid electrolyte layer, and thus it can be manufactured in a smaller size and in a large area process.
    Type: Application
    Filed: November 21, 2007
    Publication date: June 5, 2008
    Applicants: Electronics and Telecommunications Research Institute, SENKO Co., Ltd.
    Inventors: Seung Eon MOON, Eun Kyoung KIM, Hong Yeol LEE, Jong Hyurk PARK, Kang Ho PARK, Jong Dae KIM, Seok Hong MIN, Byung Gil JUNG, Seung Chul HA
  • Publication number: 20050061235
    Abstract: A laser ablation apparatus. A target has a silicon region and an erbium region divided in a chamber with a silicon substrate opposite to the target. A target rotating axis rotates the target to alternately radiate laser light onto the silicon region and the erbium region, a laser generator irradiates laser light for generating a plume by ablating silicon from the silicon region and erbium from the erbium region outside the chamber.
    Type: Application
    Filed: November 2, 2004
    Publication date: March 24, 2005
    Inventors: Jeong-sook Ha, Kyoung-wan Park, Seung-min Park, Jong-hyurk Park
  • Patent number: 6841082
    Abstract: A method of manufacturing Er-doped silicon nano-dot arrays and a laser ablation apparatus are provided. In the method, a target having a silicon region and an erbium region is prepared. A silicon substrate is introduced opposite to the target. Laser light is irradiated onto the target, a plume containing silicon ablated from the silicon region and erbium ablated from the erbium region is generated, and an Er-doped silicon film is deposited on the silicon substrate from the plume. The Er-doped silicon film is patterned.
    Type: Grant
    Filed: June 12, 2002
    Date of Patent: January 11, 2005
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Jeong-sook Ha, Kyoung-wan Park, Seung-min Park, Jong-hyurk Park
  • Publication number: 20040129223
    Abstract: A method and apparatus for manufacturing a silicon nanodot thin film having uniform doping concentration without damage by depositing a matrix thin film based on the silicon by PECVD, while doping a light emitting material such as Erbium on the matrix thin film deposited by sputtering process at the same time. The silicon nanodot film obtained by the present invention has an improved light emitting characteristic in long distance communication frequency range of 1.54 &mgr;m as well as visible light range.
    Type: Application
    Filed: December 17, 2003
    Publication date: July 8, 2004
    Inventor: Jong Hyurk Park
  • Publication number: 20030121882
    Abstract: A method of manufacturing Er-doped silicon nano-dot arrays and a laser ablation apparatus are provided. In the method, a target having a silicon region and an erbium region is prepared. A silicon substrate is introduced opposite to the target. Laser light is irradiated onto the target, a plume containing silicon ablated from the silicon region and erbium ablated from the erbium region is generated, and an Er-doped silicon film is deposited on the silicon substrate from the plume The Er-doped silicon film is patterned.
    Type: Application
    Filed: June 12, 2002
    Publication date: July 3, 2003
    Inventors: Jeong-sook Ha, Kyoung-wan Park, Seung-min Park, Jong-hyurk Park