Patents by Inventor Jong-Seo Hong

Jong-Seo Hong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10635244
    Abstract: A head mounted display device includes: display part disposed to correspond to two eyes of a user, and including wires and one or more pixels connected to the wires; and a sensor disposed around the display part and configured to sense a touch of the user. The sensor includes sensing electrodes, and at least one of the sensing electrodes is provided on the same layer as a portion of the display part.
    Type: Grant
    Filed: May 31, 2016
    Date of Patent: April 28, 2020
    Assignee: Samsung Display Co., Ltd.
    Inventors: Won Ki Hong, Jong Seo Lee
  • Patent number: 10586092
    Abstract: An apparatus for user authentication includes a sensor array and a sensing signal processor. The sensor array is formed on at least one surface of a mobile device. The sensing signal processor receives information of a palm of a user, received from the sensor array, and performs a user authentication through pattern analysis. Accordingly, an authentication of the user of the mobile device can be simply performed.
    Type: Grant
    Filed: January 3, 2017
    Date of Patent: March 10, 2020
    Assignee: Samsung Display Co., Ltd.
    Inventors: Won Ki Hong, Jong Seo Lee
  • Publication number: 20200012379
    Abstract: A display device including a display panel, a plurality of gripping sensors at a side of the display device and configured to detect a gripping of the side of the display device, and a plurality of touch sensors on the display panel and configured to generate a sensing output signal based on sensing input signals, in which the sensing input signals having different enable voltages are applied to the plurality of touch sensors, and the different enable voltages are determined according to the gripping.
    Type: Application
    Filed: September 17, 2019
    Publication date: January 9, 2020
    Inventors: Won-Ki HONG, Jong Seo LEE
  • Publication number: 20200005012
    Abstract: An exemplary embodiment of the present inventive concept provides a display device including: a display unit including a plurality of pixels disposed on a display area; a display controller configured to control the display unit; a sensor including a plurality of first sensing electrodes and a plurality of second sensing electrodes disposed in the display area; and a sensor controller configured to recognize a touch of a user inputted into the sensor in a touch sensing mode and to recognize a fingerprint of the user inputted into the sensor in a fingerprint sensing mode, wherein the sensor controller changes a mode to the fingerprint sensing mode when no touch is inputted for a predetermined time period in the touch sensing mode and changes the mode to the touch sensing mode when authorization on a fingerprint inputted into the sensor is succeeded in the fingerprint sensing mode.
    Type: Application
    Filed: September 9, 2019
    Publication date: January 2, 2020
    Inventors: Won Ki HONG, Jong Seo LEE
  • Patent number: 10452194
    Abstract: A display device including a display, a plurality of gripping sensors formed at edges of the display and configured to generate a gripping signal according to a gripping of an edge of the display, a sensing scan driver configured to generate sensing input signals according to a gripping position based on the gripping signal, and a plurality of touch sensors formed on the display and configured to generate a sensing output signal in response to a touch of the display based on the sensing input signals, in which the sensing input signals include a first sensing input signal and a second sensing input signal, the first sensing input signal corresponds to a touched gripping sensor, the second sensing input signal corresponds to a non-touched gripping sensor, and the first sensing input signal has a higher voltage than the second sensing input signal.
    Type: Grant
    Filed: March 4, 2019
    Date of Patent: October 22, 2019
    Assignee: Samsung Display Co., Ltd.
    Inventors: Won-Ki Hong, Jong Seo Lee
  • Patent number: 10430632
    Abstract: An exemplary embodiment of the present inventive concept provides a display device including: a display unit including a plurality of pixels disposed on a display area; a display controller configured to control the display unit; a sensor including a plurality of first sensing electrodes and a plurality of second sensing electrodes disposed in the display area; and a sensor controller configured to recognize a touch of a user inputted into the sensor in a touch sensing mode and to recognize a fingerprint of the user inputted into the sensor in a fingerprint sensing mode, wherein the sensor controller changes a mode to the fingerprint sensing mode when no touch is inputted for a predetermined time period in the touch sensing mode and changes the mode to the touch sensing mode when authorization on a fingerprint inputted into the sensor is succeeded in the fingerprint sensing mode.
    Type: Grant
    Filed: January 9, 2017
    Date of Patent: October 1, 2019
    Assignee: Samsung Display Co., Ltd.
    Inventors: Won Ki Hong, Jong Seo Lee
  • Publication number: 20190196649
    Abstract: A display device including a display, a plurality of gripping sensors formed at edges of the display and configured to generate a gripping signal according to a gripping of an edge of the display, a sensing scan driver configured to generate sensing input signals according to a gripping position based on the gripping signal, and a plurality of touch sensors formed on the display and configured to generate a sensing output signal in response to a touch of the display based on the sensing input signals, in which the sensing input signals include a first sensing input signal and a second sensing input signal, the first sensing input signal corresponds to a touched gripping sensor, the second sensing input signal corresponds to a non-touched gripping sensor, and the first sensing input signal has a higher voltage than the second sensing input signal.
    Type: Application
    Filed: March 4, 2019
    Publication date: June 27, 2019
    Inventors: Won-Ki Hong, Jong Seo Lee
  • Patent number: 9989856
    Abstract: Disclosed is a method of manufacturing semiconductor devices. A dummy gate structure is formed on a pattern area defined by an edge area of a substrate. An interlayer insulating layer pattern is formed to cover the pattern area and exposing the edge area of the substrate. A blocking pattern is formed on the interlayer insulating layer pattern such that the edge area of the substrate is covered with the blocking pattern and the pattern area of the substrate is exposed through the blocking pattern. A gate hole in the pattern area of the substrate in correspondence to the dummy gate structure, and a metal gate structure is formed in the gate hole. Accordingly, the edge area of the substrate is protected in the etching process and the deposition process of the replacement gate metal (RGM) process.
    Type: Grant
    Filed: March 25, 2016
    Date of Patent: June 5, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung-Woo Seo, Sang-Jin Kim, Jong-Seo Hong, Jong-Hoon Nah, Choon-Ho Song
  • Patent number: 9859175
    Abstract: Provided are substrate processing systems and methods of managing the same. The method may include displaying a notification for a preventive maintenance operation on a chamber, performing a maintenance operation on the chamber, performing a first optical test, and evaluating the preventive maintenance operation. The first optical test may include generating a reference plasma reaction, measuring a variation of intensity by wavelength for plasma light emitted from the reference plasma reaction, and calculating an electron density and an electron temperature from a ratio in intensity of the plasma light.
    Type: Grant
    Filed: April 29, 2016
    Date of Patent: January 2, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kiwook Song, Bum-Soo Kim, Kye Hyun Baek, Masayuki Tomoyasu, Eunwoo Lee, Jong Seo Hong
  • Publication number: 20170047200
    Abstract: A plasma processing apparatus includes a chamber defining a process space, an upper electrode mounted in the chamber, the upper electrode including a first gas spray port located in a central region of the upper electrode and a second gas spray port located in a peripheral region of the upper electrode, a lower electrode located opposite the upper electrode across the process space, a first gas supply unit configured to supply a first process gas into the process space via the first gas spray port and the second gas spray port, a second gas supply unit configured to supply a second process gas into the process space via the second gas spray port, a sensor configured to sense a state of plasma in an edge portion of the process space, and a controller configured to control the second gas supply unit in response to an output signal of the sensor.
    Type: Application
    Filed: April 13, 2016
    Publication date: February 16, 2017
    Inventors: Hyung-Joo Lee, Kye-hyun Baek, Masayuki Tomoyasu, Jong-seo Hong, Jin-pyoung Kim
  • Publication number: 20170032987
    Abstract: Disclosed are a dry etching apparatus and a method of etching a substrate using the same. The apparatus includes a base at a lower portion of process chamber in which a dry etching process is performed, a substrate holder arranged on the base and holding a substrate on which a plurality of pattern structures is formed by the etching process, a focus ring enclosing the substrate holder and uniformly focusing an etching plasma to a sheath area over the substrate, a driver driving the focus ring in a vertical direction perpendicular to the base and a position controller controlling a vertical position of the focus ring by selectively driving the driver in accordance with inspection results of the pattern structures. Accordingly, the gap distance between the substrate and the focus ring is automatically controlled to thereby increase the uniformity of the etching plasma over the substrate.
    Type: Application
    Filed: April 12, 2016
    Publication date: February 2, 2017
    Inventors: Hyung-Joo LEE, Kwang-Nam KIM, Jong-Seo HONG, Kye-Hyun BAEK, Masayuki TOMOYASU
  • Publication number: 20160372386
    Abstract: Provided are substrate processing systems and methods of managing the same. The method may include displaying a notification for a preventive maintenance operation on a chamber, performing a maintenance operation on the chamber, performing a first optical test, and evaluating the preventive maintenance operation. The first optical test may include generating a reference plasma reaction, measuring a variation of intensity by wavelength for plasma light emitted from the reference plasma reaction, and calculating an electron density and an electron temperature from a ratio in intensity of the plasma light.
    Type: Application
    Filed: April 29, 2016
    Publication date: December 22, 2016
    Inventors: Kiwook SONG, Bum-Soo KIM, Kye Hyun BAEK, MASAYUKI TOMOYASU, Eunwoo LEE, JONG SEO HONG
  • Publication number: 20160293728
    Abstract: Disclosed is a method of manufacturing semiconductor devices. A dummy gate structure is formed on a pattern area defined by an edge area of a substrate. An interlayer insulating layer pattern is formed to cover the pattern area and exposing the edge area of the substrate. A blocking pattern is formed on the interlayer insulating layer pattern such that the edge area of the substrate is covered with the blocking pattern and the pattern area of the substrate is exposed through the blocking pattern. A gate hole in the pattern area of the substrate in correspondence to the dummy gate structure, and a metal gate structure is formed in the gate hole. Accordingly, the edge area of the substrate is protected in the etching process and the deposition process of the replacement gate metal (RGM) process.
    Type: Application
    Filed: March 25, 2016
    Publication date: October 6, 2016
    Inventors: Jung-Woo SEO, Sang-Jin KIM, Jong-Seo HONG, Jong-Hoon NAH, Choon-Ho SONG
  • Patent number: 9299811
    Abstract: Semiconductor devices may include first and second fins that protrude from a substrate, extend in a first direction, and are separated from each other in the first direction. Semiconductor devices may also include a field insulating layer that is disposed between the first and second fins to extend in a second direction intersecting the first direction, an etch-stop layer pattern that is formed on the field insulating layer and a dummy gate structure that is formed on the etch-stop layer pattern.
    Type: Grant
    Filed: October 21, 2014
    Date of Patent: March 29, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Wook-Je Kim, Jae-Yup Chung, Jong-Seo Hong, Cheol Kim, Hee-Soo Kang, Hyun-Jo Kim, Hee-Don Jeong, Soo-Hun Hong, Sang-Bom Kang, Myeong-Cheol Kim, Young-Su Chung
  • Publication number: 20150147860
    Abstract: Semiconductor devices may include first and second fins that protrude from a substrate, extend in a first direction, and are separated from each other in the first direction. Semiconductor devices may also include a field insulating layer that is disposed between the first and second fins to extend in a second direction intersecting the first direction, an etch-stop layer pattern that is formed on the field insulating layer and a dummy gate structure that is formed on the etch-stop layer pattern.
    Type: Application
    Filed: October 21, 2014
    Publication date: May 28, 2015
    Inventors: Wook-Je Kim, Jae-Yup Chung, Jong-Seo Hong, Cheol Kim, Hee-Soo Kang, Hyun-Jo Kim, Hee-Don Jeong, Soo-Hun Hong, Sang-Bom Kang, Myeong-Cheol Kim, Young-Su Chung
  • Publication number: 20150076617
    Abstract: Methods of forming patterns of a semiconductor device are provided. The methods may include forming a hard mask film on a semiconductor substrate. The methods may include forming first and second sacrificial film patterns that are spaced apart from each other on the hard mask film. The methods may include forming a first spacer on opposing sidewalls of the first sacrificial film pattern and a second spacer on opposing sidewalls of the second sacrificial film pattern. The methods may include removing the first and second sacrificial film patterns. The methods may include trimming the second spacer such that a line width of the second spacer becomes smaller than a line width of the first spacer. The methods may include forming first and second hard mask film patterns by etching the hard mask film using the first spacer and the trimmed second spacer as an etch mask.
    Type: Application
    Filed: November 20, 2014
    Publication date: March 19, 2015
    Inventors: Myeong-Cheol Kim, Il-Sup Kim, Cheol Kim, Jong-Chan Shin, Jong-Wook Lee, Choong-Ho Lee, Si-Young Choi, Jong-Seo Hong
  • Patent number: 8906757
    Abstract: Methods of forming patterns of a semiconductor device are provided. The methods may include forming a hard mask film on a semiconductor substrate. The methods may include forming first and second sacrificial film patterns that are spaced apart from each other on the hard mask film. The methods may include forming a first spacer on opposing sidewalls of the first sacrificial film pattern and a second spacer on opposing sidewalls of the second sacrificial film pattern. The methods may include removing the first and second sacrificial film patterns. The methods may include trimming the second spacer such that a line width of the second spacer becomes smaller than a line width of the first spacer. The methods may include forming first and second hard mask film patterns by etching the hard mask film using the first spacer and the trimmed second spacer as an etch mask.
    Type: Grant
    Filed: November 12, 2012
    Date of Patent: December 9, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Myeong-Cheol Kim, Il-Sup Kim, Cheol Kim, Jong-Chan Shin, Jong-Wook Lee, Choong-Ho Lee, Si-Young Choi, Jong-Seo Hong
  • Patent number: 8569140
    Abstract: A method for fabricating a semiconductor device is disclosed. One embodiment of the method includes forming a dummy gate pattern on a substrate, forming an interlayer dielectric film that covers the dummy gate pattern, exposing a top surface of the dummy gate pattern, selectively removing the dummy gate pattern to form a first gate trench, forming a sacrificial layer pattern over a top surface of the substrate in the first gate trench, the sacrificial layer pattern leaving a top portion of the first gate trench exposed, increasing an upper width of the exposed top portion of the first gate trench to form a second gate trench, and removing the sacrificial layer pattern in the second gate trench, and forming a non-dummy gate pattern in the second gate trench.
    Type: Grant
    Filed: July 29, 2011
    Date of Patent: October 29, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyu-Tae Kim, Jong-Seo Hong, Tae-Han Kim
  • Patent number: 8563412
    Abstract: A method of fabricating a semiconductor device includes forming gate patterns on a substrate, forming spacers on sidewalls of the gate patterns, forming a first capping insulation layer pattern on the gate patterns and the spacers, forming a second capping insulation layer pattern on the first capping insulation layer pattern, forming a passivation layer pattern filling contact holes between the gate patterns, removing the second capping insulation layer pattern while protecting the spacers using the passivation layer pattern, removing the passivation layer pattern to expose a top surface of the substrate, forming a silicide forming metal film on the surface of the substrate, and forming silicide patterns on the exposed top surface of the substrate.
    Type: Grant
    Filed: August 8, 2011
    Date of Patent: October 22, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyu-Tae Kim, Jong-Seo Hong
  • Patent number: 8394697
    Abstract: A capacitor of a semiconductor memory device, and methods of forming the same, are disclosed. A pad interlayer insulating layer is disposed on a semiconductor substrate of an active region. Landing pads and a central landing pad are disposed in peripheral portions and a central portion of the active region, respectively, to penetrate the pad interlayer insulating layer. The upper surface of the central landing pad has a different area from the upper surfaces of the landing pads. A buried interlayer insulating layer is formed on the pad interlayer insulating layer to cover the landing pads and the central landing pad. Buried plugs are formed on the respective landing pads to penetrate the buried interlayer insulating layer. Lower electrodes are formed on the buried plugs.
    Type: Grant
    Filed: January 20, 2011
    Date of Patent: March 12, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong-Seo Hong, Jeong-Sic Jeon, Chun-Suk Suh, Yoo-Sang Hwang