Abstract: A method of manufacturing a wrapper for a non-combustion-type cigarette used in an aerosol generating device, according to an embodiment, includes manufacturing a reconstituted tobacco sheet by mixing a tobacco material and first pulp, and manufacturing a wrapper by mixing the reconstituted tobacco sheet and second pulp. A wrapper for a non-combustion-type cigarette used in an aerosol generating device has a tensile strength of 3.0 kgf/15 mm or greater, and includes at least one of cigar leaf powder, cigar leaf pieces, and cigar leaves.

Abstract: Semiconductor device may include a landing pad and a lower electrode that is on and is connected to the landing pad and includes an outer portion and an inner portion inside the outer portion. The outer portion includes first and second regions. The semiconductor devices may also include a dielectric film on the first region of the outer portion on the lower electrode and an upper electrode on the dielectric film. The first region of the outer portion of the lower electrode may include a silicon (Si) dopant, the dielectric film does not extend along the second region of the outer portion. A concentration of the silicon dopant in the first region of the outer portion is different from a concentration of the silicon dopant in the second region of the outer portion and is higher than a concentration of the silicon dopant in the inner portion.

Abstract: The present disclosure relates to a power supply device of a system contained inside a vehicle. Specifically, the present disclosure relates to a technique for implementing a switching function in place of a switching circuit which limits the power of a battery. The power supply device, according to the present disclosure, determines the start state of the system using a change in the state of a start signal of the vehicle, and supplies power or stops the supply of power according to the determined start state.

Abstract: The present disclosure relates to a sodium-ion storage material including a doped compound, and an electrode material for a sodium-ion battery, an electrode for a sodium-ion battery, and a sodium-ion battery, which include the sodium-ion storage material. Specifically, the sodium-ion storage material may include a compound consisting of an Na3V2-xMx(PO4)2F3/Na3V2-yMy(PO4)3 composite (M=Fe, Mn, Cr, Cu, Zn or Ti, 0<x,y?2). When the sodium-ion storage material according to the present disclosure is used, it may maintain high discharge capacity while reducing the vanadium content, and when the sodium-ion storage material is applied to a sodium-ion secondary battery or a sodium-magnesium hybrid-ion battery, the battery may exhibit excellent charge/discharge cycle characteristics.

Abstract: The present disclosure provides an externally heated aerosol generation device and a cigarette that may provide a sufficient amount of atomization to allow a user to have a satisfactory smoking experience even during an initial puff because thermal energy is easily transferred to the cigarette.

Abstract: In the electrode assembly, the first uncoated portion provided at a long side end of a first electrode includes a segment region divided into a plurality of independently bendable segments by a plurality of cut grooves provided along a winding direction. The segment region includes a plurality of segment groups disposed with a group separation pitch along the winding direction. The plurality of segment groups constitute at least one segment alignment on one side of the electrode assembly. At least some of central points of winding turn arcs where the p number of segment groups are located are not located on a predetermined alignment line extending in the radial direction from the center of the core.

Abstract: Semiconductor device may include a landing pad and a lower electrode that is on and is connected to the landing pad and includes an outer portion and an inner portion inside the outer portion. The outer portion includes first and second regions. The semiconductor devices may also include a dielectric film on the first region of the outer portion on the lower electrode and an upper electrode on the dielectric film. The first region of the outer portion of the lower electrode may include a silicon (Si) dopant, the dielectric film does not extend along the second region of the outer portion. A concentration of the silicon dopant in the first region of the outer portion is different from a concentration of the silicon dopant in the second region of the outer portion and is higher than a concentration of the silicon dopant in the inner portion.

Abstract: Disclosed herein are a system and method which can control the generation rate of boil-off gas from liquefied hydrogen and can maintain the liquefied hydrogen storage tank at a low pressure. The method for controlling boil-off gas from liquefied hydrogen according to the present invention includes: at least two storage tanks storing liquefied hydrogen and each operated in a high-temperature mode or in a low-temperature mode, wherein the low-temperature mode includes: maintaining at least a portion of liquefied hydrogen stored in the storage tank at a first temperature being a densification temperature, and the high-temperature mode includes: maintaining at least a portion of liquefied hydrogen stored in the storage tank at a second temperature being a temperature exceeding a triple point of liquefied hydrogen through recovery of cold heat from liquefied hydrogen stored in the storage tank.

Abstract: An electrode assembly, a battery, a battery pack and a vehicle are provided. In the electrode assembly, a first electrode, a second electrode, and a separator interposed therebetween are wound based on a winding axis to define a core and an outer circumference, the first electrode includes a first active material portion coated with an active material layer along a winding direction and a first uncoated portion not coated with an active material layer, the first uncoated portion includes a plurality of independently bendable segments, a cut groove is interposed between adjacent segments along the winding direction, and a lower portion of the cut groove has a round portion.

Abstract: Disclosed are a liquefied hydrogen storage tank which is applicable to a storage facility storing a large amount of hydrogen in a liquefied state or a vehicle transporting liquefied hydrogen and a liquefied hydrogen storage tank, and a method for controlling the temperature of the liquefied hydrogen storage tank which can control the generation rate of boil-off gas from liquefied hydrogen and can maintain the liquefied hydrogen storage tank at a low pressure. The liquefied hydrogen storage tank is a storage container storing liquefied hydrogen, has an inner space including a lower space in which liquefied hydrogen is stored and an upper space in which a gas is stored, and includes a heat inflow prevention unit disposed in the upper space or at an interface between the upper space and the lower space and preventing inflow of thermal energy into the lower space through the upper space.

Abstract: The present invention relates to a multi-nozzle for supplying CMP slurry. An exemplary embodiment of the present invention drops the slurry from the center of a pad to the outside through a plurality of spray nozzles, thereby increasing the efficiency of a planarization process by evenly spreading the slurry over the entire pad and reducing costs by minimizing the amount of slurry wasted.

Abstract: A three-dimensional (3D) semiconductor memory device comprises memory cell strings each comprising at least one selection transistor and at least one memory cell, a first pass transistor group sharing a first well region and comprising a first selection line pass transistor connected to the selection transistor and a first world line pass transistor connected to the memory cell, a second pass transistor group sharing a second well region and comprising a second selection line pass transistor connected to the selection transistor, and a controller that controls the first pass transistor group and the second pass transistor group. The controller applies selected voltages to the first and second well regions during read operation.

Abstract: A three-dimensional (3D) semiconductor memory device comprises memory cell strings each comprising at least one selection transistor and at least one memory cell, a first pass transistor group sharing a first well region and comprising a first selection line pass transistor connected to the selection transistor and a first world line pass transistor connected to the memory cell, a second pass transistor group sharing a second well region and comprising a second selection line pass transistor connected to the selection transistor, and a controller that controls the first pass transistor group and the second pass transistor group. The controller applies selected voltages to the first and second well regions during read operation.

Abstract: A nonvolatile memory device for preventing program disturbances includes a memory cell array block, a word line driver, and a well bias control unit. The memory cell array block includes at least one cell string having a plurality of memory cells serially connected to a bit line and alternately connected to even word lines and odd word lines. After a program verification, the word line driver drives the even word lines with a first voltage and then the odd word lines with the first voltage to drop the even word line to a voltage lower than the first voltage. The well bias control unit floats a bias of a p-well formed by high voltage NMOS transistors that apply corresponding driving voltages to the even word lines and the odd word lines according to an operation mode of a program operation, a read operation, and an erase operation.

Abstract: A nonvolatile memory device for preventing program disturbances includes a memory cell array block, a word line driver, and a well bias control unit. The memory cell array block includes at least one cell string having a plurality of memory cells serially connected to a bit line and alternately connected to even word lines and odd word lines. After a program verification, the word line driver drives the even word lines with a first voltage and then the odd word lines with the first voltage to drop the even word line to a voltage lower than the first voltage. The well bias control unit floats a bias of a p-well formed by high voltage NMOS transistors that apply corresponding driving voltages to the even word lines and the odd word lines according to an operation mode of a program operation, a read operation, and an erase operation.

Abstract: A nonvolatile memory device for preventing program disturbances includes a memory cell array block, a word line driver, and a well bias control unit. The memory cell array block includes at least one cell string having a plurality of memory cells serially connected to a bit line and alternately connected to even word lines and odd word lines. After a program verification, the word line driver drives the even word lines with a first voltage and then the odd word lines with the first voltage to drop the even word line to a voltage lower than the first voltage. The well bias control unit floats a bias of a p-well formed by high voltage NMOS transistors that apply corresponding driving voltages to the even word lines and the odd word lines according to an operation mode of a program operation, a read operation, and an erase operation.

Abstract: In a flash memory device, different self-boosting techniques are selectively applied to a string of serially connected memory cells responsive to a programming voltage applied to a selected word line. For example, non-local self-boosting and local self-boosting may be selectively applied responsive to the programming voltage applied to the selected word line. For example, non-local self-boosting and local self-boosting may be selectively applied to a first string of serially-connected cells responsive to the programming voltage during an incremental step pulse programming (ISPP) of a selected cell of a second string of serially-connected cells.

Abstract: A method of performing an erase operation in a non-volatile memory device includes a multi-erase operation and a post-erase operation. The multi-erase operation includes multi-erasing multiple memory blocks at the same time using a multi-erase voltage. The post-erase operation includes post-erasing one or more failed memory blocks of the multi-erased memory blocks using a post-erase voltage having sequentially increasing voltage values based on incremental step pulses (ISPs).

Abstract: A non-volatile semiconductor memory device includes a page buffer comprising a lower latch block and an upper latch block, and a memory array that is connected to the lower latch block via a lower common bit line and that is connected to the upper latch block via an upper common bit line. The memory array includes a plurality of non-volatile memory cells, a lower even bit line and a lower odd bit line that are selectively connectable to the lower common bit line, an upper even bit line and an upper odd bit line that are selectively connectable to the upper common bit line, a first switch that electrically connects the lower even bit line to the upper even bit line in response to a first connection control signal and a second switch that electrically connects the lower odd bit line to the upper odd bit line in response to a second connection control signal.

Abstract: A nonvolatile memory device for preventing program disturbances includes a memory cell array block, a word line driver, and a well bias control unit. The memory cell array block includes at least one cell string having a plurality of memory cells serially connected to a bit line and alternately connected to even word lines and odd word lines. After a program verification, the word line driver drives the even word lines with a first voltage and then the odd word lines with the first voltage to drop the even word line to a voltage lower than the first voltage. The well bias control unit floats a bias of a p-well formed by high voltage NMOS transistors that apply corresponding driving voltages to the even word lines and the odd word lines according to an operation mode of a program operation, a read operation, and an erase operation.