Abstract: Provided is an apparatus for online action detection, the apparatus including a feature extraction unit configured to extract a chunk-level feature of a video chunk sequence of a streaming video, a filtering unit configured to perform filtering on the chunk-level feature, and an action classification unit configured to classify an action class using the filtered chunk-level feature.

Abstract: A complementary thin film transistor (TFT) includes a substrate and a first TFT and a second TFT disposed on the substrate, wherein a first conductive semiconductor layer of the first TFT and a second gate electrode layer of the second TFT are disposed in the same layer and include the same material.

Abstract: This invention provides an optical fiber block that includes an optical-fiber-alignment portion and a stress-reduction-depth portion. In the optical-fiber-alignment portion, a V groove array is arranged to accommodate the non-coated fiber portion of a ribbon fiber. The V groove array is formed by primary and secondary wet-etching processes on a silicon wafer, and further includes first V grooves at both sides and second V grooves different from the first V grooves disposed between the first V grooves. Meanwhile, the stress-reduction-depth portion is formed by another wet etching, extending to a predetermined depth from the optical-fiber-alignment portion, for reducing stress caused by a variation in the coating thickness of the optical fibers.

Abstract: A photomask is disclosed for the fabrication of an optical fiber block including a first section provided with slit arrays adapted to form an optical fiber alignment region of the optical fiber block while having a uniform slit pitch, partition portions arranged between adjacent ones of the slit arrays while having a pitch larger than the slit pitch, and end portions arranged outside the slit arrays while having a pitch larger than the slit pitch. The photomask also includes a second section adapted to form a stress-reducing recessed region of the optical fiber block etched to a desired depth from the level of the optical fiber alignment region. The photomask also includes auxiliary slit arrays arranged at an interface between the first and second sections. The auxiliary slit array includes at least one slit.

Abstract: This invention provides an optical fiber block that includes an optical-fiber-alignment portion and a stress-reduction-depth portion. In the optical-fiber-alignment portion, a V groove array is arranged to accommodate the non-coated fiber portion of a ribbon fiber. The V groove array is formed by primary and secondary wet-etching processes on a silicon wafer, and further includes first V grooves at both sides and second V grooves different from the first V grooves disposed between the first V grooves. Meanwhile, the stress-reduction-depth portion is formed by another wet etching, extending to a predetermined depth from the optical-fiber-alignment portion, for reducing stress caused by a variation in the coating thickness of the optical fibers.

Abstract: A photomask is disclosed for the fabrication of an optical fiber block including a first section provided with slit arrays adapted to form an optical fiber alignment region of the optical fiber block while having a uniform slit pitch, partition portions arranged between adjacent ones of the slit arrays while having a pitch larger than the slit pitch, and end portions arranged outside the slit arrays while having a pitch larger than the slit pitch. The photomask also includes a second section adapted to form a stress-reducing recessed region of the optical fiber block etched to a desired depth from the level of the optical fiber alignment region. The photomask also includes auxiliary slit arrays arranged at an interface between the first and second sections. The auxiliary slit array includes at least one slit.