Patents by Inventor Joon Sup Lee

Joon Sup Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11139338
    Abstract: A light emitting device including a substrate, first and second light emitting diodes disposed thereon and including a first semiconductor layer, an active layer, and a second semiconductor layer, a first upper electrode electrically connected to the first semiconductor layer and insulated from the second semiconductor layer of the first light emitting diode, a second upper electrode electrically connected to the first semiconductor layer and insulated from the second semiconductor layer of the second light emitting diode, in which the first and second light emitting diodes are spaced apart from each other to expose the substrate, the first upper electrode has a protrusion electrically connected to the second semiconductor layer of the second light emitting diode and covering portions of the exposed substrate, the first light emitting diode, and the second light emitting diode, and the second upper electrode has a groove.
    Type: Grant
    Filed: April 24, 2020
    Date of Patent: October 5, 2021
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Jong Min Jang, Jong Hyeon Chae, Joon Sup Lee, Daewoong Suh, Hyun A Kim, Won Young Roh, Min Woo Kang
  • Patent number: 10985304
    Abstract: A light emitting diode including a first semiconductor layer, a mesa disposed thereon and including a second semiconductor layer and an active layer, an ohmic reflection layer disposed on the mesa to form an ohmic contact with the second semiconductor layer, a lower insulation layer covering the mesa and the ohmic reflection layer and partially exposing the first semiconductor layer and the ohmic reflection layer, a first pad metal layer disposed on the lower insulation layer and electrically connected to the first semiconductor layer, a metal reflection layer disposed on the lower insulation layer and laterally spaced apart from the first pad metal layer, and an upper insulation layer covering the first pad metal layer and the metal reflection layer, and having a first opening exposing the first pad metal layer, in which at least a portion of the metal reflection layer covers a side surface of the mesa.
    Type: Grant
    Filed: October 11, 2017
    Date of Patent: April 20, 2021
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Se Hee Oh, Hyun A Kim, Joon Sup Lee, Min Woo Kang, Hyoung Jin Lim
  • Patent number: 10950755
    Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.
    Type: Grant
    Filed: September 17, 2020
    Date of Patent: March 16, 2021
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Jong Hyeon Chae, Joon Sup Lee, Daewoong Suh, Won Young Roh, Min Woo Kang, Jong Min Jang, Se Hee Oh, Hyun A Kim
  • Publication number: 20210005785
    Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.
    Type: Application
    Filed: September 17, 2020
    Publication date: January 7, 2021
    Inventors: Jong Hyeon CHAE, Joon Sup LEE, Daewoong SUH, Won Young ROH, Min Woo KANG, Jong Min JANG, Se Hee OH, Hyun A KIM
  • Patent number: 10804316
    Abstract: A light emitting diode array is provide to include: a substrate; light emitting diodes positioned over the substrate, each including a first semiconductor layer, an active layer, and a second semiconductor layer, wherein each light emitting diode is disposed to form a first via hole structure exposing a portion of the corresponding first semiconductor layer; lower electrodes disposed over the second semiconductor layer; a first interlayer insulating layer disposed over the lower electrodes and configured to expose the portion of the first semiconductor layer of corresponding light emitting diodes; upper electrodes electrically connected to the first semiconductor layer through the first via hole structure, wherein the first via hole structure is disposed in parallel with one side of the corresponding second semiconductor layer and the first interlayer insulating layer is disposed to form a second via hole structure exposing a portion of the lower electrodes.
    Type: Grant
    Filed: December 7, 2017
    Date of Patent: October 13, 2020
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Jong Min Jang, Jong Hyeon Chae, Joon Sup Lee, Daewoong Suh, Hyun A. Kim, Won Young Roh, Min Woo Kang
  • Patent number: 10784406
    Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.
    Type: Grant
    Filed: February 5, 2020
    Date of Patent: September 22, 2020
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Jong Hyeon Chae, Joon Sup Lee, Daewoong Suh, Won Young Roh, Min Woo Kang, Jong Min Jang, Se Hee Oh, Hyun A Kim
  • Patent number: 10756237
    Abstract: A light emitting diode including a first conductive type semiconductor layer, a mesa disposed on the first conductive type semiconductor layer, the mesa including an active layer and a second conductive type semiconductor layer, a reflective electrode disposed on the mesa and configured to be in ohmic-contact with the second conductive type semiconductor layer, a current spreading layer disposed on the mesa and the reflective electrode, the current spreading layer including a first portion configured to be in ohmic-contact with an upper surface of the first conductive type semiconductor layer, a first n-contact region spaced apart from a second n-contact region with the mesa disposed between the first and second n-contact regions, and an insulation layer including a first opening exposing the reflective electrode between the first and second n-contact regions. The first and second n-contact regions have a second opening that exposes the first conductive type semiconductor layer.
    Type: Grant
    Filed: September 16, 2019
    Date of Patent: August 25, 2020
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Jong Hyeon Chae, Jong Min Jang, Won Young Roh, Daewoong Suh, Dae Sung Cho, Joon Sup Lee, Kyu Ho Lee, Chi Hyun In
  • Patent number: 10749080
    Abstract: A light emitting diode apparatus includes a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a mesa, a lower insulating layer, a first pad and a second pad. The substrate has a first surface and a second surface opposite to the first surface. The first conductivity type semiconductor layer is disposed on the first surface of the substrate. The mesa is disposed on the first conductive semiconductor layer and has an active layer and the second conductive semiconductor layer. A peripheral edge of the first conductive semiconductor layer is exposed. The lower insulating layer covers the mesa and the first conductive semiconductor layer and has a plurality of first openings exposing the first conductive semiconductor layer along a peripheral edge of the substrate.
    Type: Grant
    Filed: October 22, 2019
    Date of Patent: August 18, 2020
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Jong Hyeon Chae, Joon Sup Lee, Won Young Roh, Min Woo Kang, Jong Min Jang, Hyun A Kim, Daewoong Suh
  • Publication number: 20200258936
    Abstract: A light emitting device including a substrate, first and second light emitting diodes disposed thereon and including a first semiconductor layer, an active layer, and a second semiconductor layer, a first upper electrode electrically connected to the first semiconductor layer and insulated from the second semiconductor layer of the first light emitting diode, a second upper electrode electrically connected to the first semiconductor layer and insulated from the second semiconductor layer of the second light emitting diode, in which the first and second light emitting diodes are spaced apart from each other to expose the substrate, the first upper electrode has a protrusion electrically connected to the second semiconductor layer of the second light emitting diode and covering portions of the exposed substrate, the first light emitting diode, and the second light emitting diode, and the second upper electrode has a groove.
    Type: Application
    Filed: April 24, 2020
    Publication date: August 13, 2020
    Inventors: Jong Min Jang, Jong Hyeon Chae, Joon Sup Lee, Daewoong Suh, Hyun A Kim, Won Young Roh, Min Woo Kang
  • Publication number: 20200220049
    Abstract: A light emitting diode chip having improved light extraction efficiency is provided. The light emitting diode chip includes a substrate, a first conductivity type semiconductor layer, a mesa, a side coating layer, and a reflection structure. The first conductivity type semiconductor layer is disposed on the substrate. The mesa includes an active layer and a second conductivity type semiconductor layer. The mesa is disposed on a partial region of the first conductivity type semiconductor layer to expose an upper surface of the first conductivity type semiconductor layer along an edge of the first conductivity type semiconductor layer. The side coating layer(s) covers a side surface of the mesa. The reflection structure is spaced apart from the side coating layer(s) and disposed on the exposed first conductivity type semiconductor layer.
    Type: Application
    Filed: March 19, 2020
    Publication date: July 9, 2020
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Se Hee OH, Jae Kwon KIM, Jong Kyu KIM, Hyun A KIM, Joon Sup LEE
  • Patent number: 10693043
    Abstract: Disclosed are an LED and an LED module. The LED includes: a first conductivity type semiconductor layer; a mesa disposed over the first conductivity type semiconductor layer and including an active layer and a second conductivity type semiconductor layer; a first ohmic-contact structure in contact with the first conductivity type semiconductor layer; a second ohmic-contact structure in contact with the second conductivity type semiconductor layer; a lower insulating layer at least partially covering the mesa and the first conductivity type semiconductor layer and disposed to form a first opening part at least partially exposing the first ohmic-contact structure and a second opening part at least partially exposing the second ohmic-contact structure; and a current distributing layer connected to the first ohmic-contact structure at least partially exposed by the first opening part and disposed to form a third opening part at least partially exposing the second opening part.
    Type: Grant
    Filed: February 12, 2018
    Date of Patent: June 23, 2020
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Jong Hyeon Chae, Won Young Roh, Joon Sup Lee, Min Woo Kang, Jong Min Jang, Hyun A Kim, Seon Min Bae, Daewoong Suh
  • Publication number: 20200176636
    Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.
    Type: Application
    Filed: February 5, 2020
    Publication date: June 4, 2020
    Inventors: Jong Hyeon CHAE, Joon Sup LEE, Daewoong SUH, Won Young ROH, Min Woo KANG, Jong Min JANG, Se Hee OH, Hyun A KIM
  • Publication number: 20200098949
    Abstract: A light emitting diode apparatus includes a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a mesa, a lower insulating layer, a first pad and a second pad. The substrate has a first surface and a second surface opposite to the first surface. The first conductivity type semiconductor layer is disposed on the first surface of the substrate. The mesa is disposed on the first conductive semiconductor layer and has an active layer and the second conductive semiconductor layer. A peripheral edge of the first conductive semiconductor layer is exposed. The lower insulating layer covers the mesa and the first conductive semiconductor layer and has a plurality of first openings exposing the first conductive semiconductor layer along a peripheral edge of the substrate.
    Type: Application
    Filed: October 22, 2019
    Publication date: March 26, 2020
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Jong Hyeon CHAE, Joon Sup LEE, Won Young ROH, Min Woo KANG, Jong Min JANG, Hyun A KIM, Daewoong SUH
  • Patent number: 10573785
    Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.
    Type: Grant
    Filed: December 11, 2017
    Date of Patent: February 25, 2020
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Jong Hyeon Chae, Joon Sup Lee, Daewoong Suh, Won Young Roh, Min Woo Kang, Jong Min Jang, Se Hee Oh, Hyun A Kim
  • Publication number: 20200035751
    Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.
    Type: Application
    Filed: October 7, 2019
    Publication date: January 30, 2020
    Inventors: Jong Kyu KIM, So Ra LEE, Yeo Jin YOON, Jae Kwon KIM, Joon Sup LEE, Min Woo KANG, Se Hee OH, Hyun A. KIM, Hyoung Jin LIM
  • Publication number: 20200013928
    Abstract: A light emitting diode including a first conductive type semiconductor layer, a mesa disposed on the first conductive type semiconductor layer, the mesa including an active layer and a second conductive type semiconductor layer, a reflective electrode disposed on the mesa and configured to be in ohmic-contact with the second conductive type semiconductor layer, a current spreading layer disposed on the mesa and the reflective electrode, the current spreading layer including a first portion configured to be in ohmic-contact with an upper surface of the first conductive type semiconductor layer, a first n-contact region spaced apart from a second n-contact region with the mesa disposed between the first and second n-contact regions, and an insulation layer including a first opening exposing the reflective electrode between the first and second n-contact regions. The first and second n-contact regions have a second opening that exposes the first conductive type semiconductor layer.
    Type: Application
    Filed: September 16, 2019
    Publication date: January 9, 2020
    Inventors: Jong Hyeon CHAE, Jong Min Jang, Won Young Roh, Daewoong Suh, Dae Sung Cho, Joon Sup Lee, Kyu Ho Lee, Chi Hyun In
  • Patent number: 10505077
    Abstract: A light emitting element according to an embodiment of the present invention comprises a first conductive-type semiconductor layer including a contact region on the lower surface thereof, a light emitting structure which includes a mesa including a second conductive-type semiconductor layer and an active layer, a second electrode, a first insulation layer, an electrode cover layer, a first electrode, a second insulation layer, and a support structure. In addition, the mesa may include a body part and a plurality of protrusion parts protruding from the body part, the contact region may be disposed between the protrusion parts, and a part of the contact region may overlap with a second metal bulk in the vertical direction. Accordingly, current spreading efficiency can be improved, and thus luminance efficiency can be more improved.
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: December 10, 2019
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Jong Hyeon Chae, Chang Yeon Kim, Joon Sup Lee, Dae Woong Suh, Won Young Roh, Ju Yong Park, Seung Hyun Kim
  • Patent number: 10497836
    Abstract: A light-emitting diode is provided to include: a transparent substrate having a first surface, a second surface, and a side surface; a first conductive semiconductor layer positioned on the first surface of the transparent substrate; a second conductive semiconductor layer positioned on the first conductive semiconductor layer; an active layer positioned between the first conductive semiconductor layer and the second conductive semiconductor layer; a first pad electrically connected to the first conductive semiconductor layer; and a second pad electrically connected to the second conductive semiconductor layer, wherein the transparent substrate is configured to discharge light generated by the active layer through the second surface of the transparent substrate, and the light-emitting diode has a beam angle of at least 140 degrees or more. Accordingly, a light-emitting diode suitable for a backlight unit or a surface lighting apparatus can be provided.
    Type: Grant
    Filed: March 27, 2017
    Date of Patent: December 3, 2019
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Jong Hyeon Chae, Joon Sup Lee, Won Young Roh, Min Woo Kang, Jong Min Jang, Hyun A. Kim, Daewoong Suh
  • Patent number: 10438992
    Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.
    Type: Grant
    Filed: January 18, 2017
    Date of Patent: October 8, 2019
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Jong Kyu Kim, So Ra Lee, Yeo Jin Yoon, Jae Kwon Kim, Joon Sup Lee, Min Woo Kang, Se Hee Oh, Hyun A Kim, Hyoung Jin Lim
  • Patent number: 10439105
    Abstract: A light emitting diode including a first conductive type semiconductor layer, a mesa disposed on the first conductive type semiconductor layer, the mesa including an active layer and a second conductive type semiconductor layer, a reflective electrode disposed on the mesa and configured to be in ohmic-contact with the second conductive type semiconductor layer, a current spreading layer disposed on the mesa and the reflective electrode, the current spreading layer including a first portion configured to be in ohmic-contact with an upper surface of the first conductive type semiconductor layer, a first n-contact region spaced apart from a second n-contact region with the mesa disposed between the first and second n-contact regions, and an insulation layer including a first opening exposing the reflective electrode between the first and second n-contact regions. The first and second n-contact regions have a second opening that exposes the first conductive type semiconductor layer.
    Type: Grant
    Filed: August 2, 2016
    Date of Patent: October 8, 2019
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Jong Hyeon Chae, Jong Min Jang, Won Young Roh, Daewoong Suh, Dae Sung Cho, Joon Sup Lee, Kyu Ho Lee, Chi Hyun In