Patents by Inventor Joong Jin Nam

Joong Jin Nam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11316250
    Abstract: A chip antenna is provided. The chip antenna includes a first dielectric layer; a second dielectric layer disposed on an upper surface of the first dielectric layer; a patch antenna pattern disposed in the second dielectric layer; first and second feed vias disposed to penetrate through at least one of the first and second dielectric layers, respectively and electrically connected to a corresponding feed point among different first and second feed points of the patch antenna pattern; and first and second filters disposed between the first and second dielectric layers, respectively and electrically connected to a corresponding feed via among the first and second feed vias.
    Type: Grant
    Filed: September 16, 2020
    Date of Patent: April 26, 2022
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Sung Yong An, Joong Jin Nam, Jae Yeong Kim
  • Publication number: 20210384609
    Abstract: A chip antenna is provided. The chip antenna includes a first dielectric layer; a second dielectric layer disposed on an upper surface of the first dielectric layer; a patch antenna pattern disposed in the second dielectric layer; first and second feed vias disposed to penetrate through at least one of the first and second dielectric layers, respectively and electrically connected to a corresponding feed point among different first and second feed points of the patch antenna pattern; and first and second filters disposed between the first and second dielectric layers, respectively and electrically connected to a corresponding feed via among the first and second feed vias.
    Type: Application
    Filed: September 16, 2020
    Publication date: December 9, 2021
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Sung Yong AN, Joong Jin NAM, Jae Yeong KIM
  • Patent number: 10985441
    Abstract: A radio frequency filter module includes: an antenna package including patch antennas and having first and second frequency passbands different from each other; an integrated circuit (IC) package including an IC; and a connecting member disposed between the antenna package and the IC package, and having a laminated structure configured to electrically connect the patch antennas and the IC to each other. The connecting member includes: a first radio frequency filter pattern having the first and second frequency passbands, and including a first port electrically connected to the IC and a second port electrically connected to at least one of the patch antennas; and a second radio frequency filter pattern having the first and second frequency passbands, and including a third port electrically connected to the IC and a fourth port electrically connected to at least another one of the patch antennas.
    Type: Grant
    Filed: July 10, 2019
    Date of Patent: April 20, 2021
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Young Kyoon Im, Joong Jin Nam
  • Publication number: 20200358158
    Abstract: A radio frequency filter includes a first conductive pattern; a second conductive pattern connected to a first point of the first conductive pattern and extended; a third conductive pattern connected to a second point of the first conductive pattern and extended to surround a portion of the second conductive pattern; a fourth conductive pattern; a fifth conductive pattern connected to a third point of the fourth conductive pattern and extended; and a sixth conductive pattern connected to a fourth point of the fourth conductive pattern and extended to surround a portion of the fifth conductive pattern. The first conductive pattern extends toward the fourth conductive pattern and the fourth conductive pattern extends toward the first conductive pattern. A distance between the first conductive pattern and the fourth conductive pattern is greater than or equal to a distance between the third conductive pattern and the sixth conductive pattern.
    Type: Application
    Filed: July 23, 2020
    Publication date: November 12, 2020
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Joong Jin NAM, Kyu Bum HAN, Jae Soon LEE, Young Kyoon IM
  • Patent number: 10804581
    Abstract: A radio frequency filter apparatus includes: radio frequency filters each having a first ring-type pattern extended from a respective first port and a second ring-type pattern extended from a respective second port; a cover ground layer disposed on or below the radio frequency filters and disposed to cover at least a portion of each of the radio frequency filters; and a surrounding ground layer disposed to surround at least a portion of each of the radio frequency filters along outer boundaries of the radio frequency filters, wherein the surrounding ground layer is spaced apart from radio frequency filters such that a shortest distance between the radio frequency filters and the surrounding ground layer is 8/5 or more times a shortest distance between the radio frequency filters and the cover ground layer.
    Type: Grant
    Filed: February 4, 2019
    Date of Patent: October 13, 2020
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventor: Joong Jin Nam
  • Patent number: 10763563
    Abstract: A radio frequency filter includes a first conductive pattern; a second conductive pattern connected to a first point of the first conductive pattern and extended; a third conductive pattern connected to a second point of the first conductive pattern and extended to surround a portion of the second conductive pattern; a fourth conductive pattern; a fifth conductive pattern connected to a third point of the fourth conductive pattern and extended; and a sixth conductive pattern connected to a fourth point of the fourth conductive pattern and extended to surround a portion of the fifth conductive pattern. The first conductive pattern extends toward the fourth conductive pattern and the fourth conductive pattern extends toward the first conductive pattern. A distance between the first conductive pattern and the fourth conductive pattern is greater than or equal to a distance between the third conductive pattern and the sixth conductive pattern.
    Type: Grant
    Filed: October 31, 2018
    Date of Patent: September 1, 2020
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Joong Jin Nam, Kyu Bum Han, Jae Soon Lee, Young Kyoon Im
  • Publication number: 20200203801
    Abstract: A radio frequency filter module includes: an antenna package including patch antennas and having first and second frequency passbands different from each other; an integrated circuit (IC) package including an IC; and a connecting member disposed between the antenna package and the IC package, and having a laminated structure configured to electrically connect the patch antennas and the IC to each other. The connecting member includes: a first radio frequency filter pattern having the first and second frequency passbands, and including a first port electrically connected to the IC and a second port electrically connected to at least one of the patch antennas; and a second radio frequency filter pattern having the first and second frequency passbands, and including a third port electrically connected to the IC and a fourth port electrically connected to at least another one of the patch antennas.
    Type: Application
    Filed: July 10, 2019
    Publication date: June 25, 2020
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Young Kyoon IM, Joong Jin NAM
  • Publication number: 20200076031
    Abstract: A radio frequency filter apparatus includes: radio frequency filters each having a first ring-type pattern extended from a respective first port and a second ring-type pattern extended from a respective second port; a cover ground layer disposed on or below the radio frequency filters and disposed to cover at least a portion of each of the radio frequency filters; and a surrounding ground layer disposed to surround at least a portion of each of the radio frequency filters along outer boundaries of the radio frequency filters, wherein the surrounding ground layer is spaced apart from radio frequency filters such that a shortest distance between the radio frequency filters and the surrounding ground layer is 8/5 or more times a shortest distance between the radio frequency filters and the cover ground layer.
    Type: Application
    Filed: February 4, 2019
    Publication date: March 5, 2020
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventor: Joong Jin NAM
  • Publication number: 20200007103
    Abstract: A radio frequency filter includes a first conductive pattern; a second conductive pattern connected to a first point of the first conductive pattern and extended; a third conductive pattern connected to a second point of the first conductive pattern and extended to surround a portion of the second conductive pattern; a fourth conductive pattern; a fifth conductive pattern connected to a third point of the fourth conductive pattern and extended; and a sixth conductive pattern connected to a fourth point of the fourth conductive pattern and extended to surround a portion of the fifth conductive pattern. The first conductive pattern extends toward the fourth conductive pattern and the fourth conductive pattern extends toward the first conductive pattern. A distance between the first conductive pattern and the fourth conductive pattern is greater than or equal to a distance between the third conductive pattern and the sixth conductive pattern.
    Type: Application
    Filed: October 31, 2018
    Publication date: January 2, 2020
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Joong Jin NAM, Kyu Bum HAN, Jae Soon LEE, Young Kyoon IM
  • Patent number: 9843298
    Abstract: A power amplifier may include a first amplifying circuit configured to amplify an input RF signal; a second amplifying circuit connected to the first amplifying circuit in parallel configured to amplify the input RF signal; and a controller connected to at least one of the first amplifying circuit and the second amplifying circuit and configured to output a control signal in order to control an on-off state of at least one of the first amplifying circuit and the second amplifying circuit. Such an approach provides high efficiency without adding significant complexity to the power amplifier.
    Type: Grant
    Filed: January 8, 2016
    Date of Patent: December 12, 2017
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Joong Jin Nam, Suk Chan Kang, Kwang Du Lee, Jae Hyouck Choi, Kyung Hee Hong, Kyu Jin Choi, Jeong Hoon Kim
  • Patent number: 9577583
    Abstract: A power amplifier may include a first amplifying unit receiving a first bias signal to amplify a power level of an input signal; an envelope detecting unit detecting an envelope of the input signal; a comparing circuit unit comparing a peak value of the detected envelope with a preset reference voltage; and a second amplifying unit amplifying the power level of the input signal according to a second bias signal set depending on a comparison result of the comparing circuit unit.
    Type: Grant
    Filed: May 8, 2014
    Date of Patent: February 21, 2017
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Kwang Du Lee, Jeong Hoon Kim, Ho Kwon Yoon, Joong Jin Nam, Kyu Jin Choi, Suk Chan Kang, Jae Hyouck Choi, Kyung Hee Hong
  • Publication number: 20160276980
    Abstract: A power amplifier may include a first amplifying circuit configured to amplify an input RF signal; a second amplifying circuit connected to the first amplifying circuit in parallel configured to amplify the input RF signal; and a controller connected to at least one of the first amplifying circuit and the second amplifying circuit and configured to output a control signal in order to control an on-off state of at least one of the first amplifying circuit and the second amplifying circuit. Such an approach provides high efficiency without adding significant complexity to the power amplifier.
    Type: Application
    Filed: January 8, 2016
    Publication date: September 22, 2016
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Joong Jin NAM, Suk Chan KANG, Kwang Du LEE, Jae Hyouck CHOI, Kyung Hee HONG, Kyu Jin CHOI, Jeong Hoon KIM
  • Publication number: 20150348700
    Abstract: There are provided an on-chip inductor, and a method for manufacturing the same. The on-chip inductor may include: a substrate; an oxide layer formed on the substrate; a spiral-shaped wiring layer formed on the oxide layer; and a shielding layer having a lattice shape interposed between the substrate and the wiring layer.
    Type: Application
    Filed: September 9, 2014
    Publication date: December 3, 2015
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Kyung Hee HONG, Jeong Hoon KIM, Suk Chan KANG, Joong Jin NAM, Kyu Jin Choi, Jae Hyouck Choi
  • Patent number: 9124353
    Abstract: A switching circuit may include: the switching circuit includes a switching circuit unit including a first transistor and a second transistor connected to each other in series, the second transistor receiving a first control signal through a control terminal thereof, and an inverter connected between a control terminal of the first transistor and a first terminal of the first transistor. The inverter receives a second control signal and maintains a gate-source voltage level of the first transistor to a threshold voltage level of the first transistor or less, and levels of the first and second control signals are logically complementary to each other.
    Type: Grant
    Filed: April 22, 2014
    Date of Patent: September 1, 2015
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Suk Chan Kang, Ho Kwon Yoon, Jeong Hoon Kim, Joong Jin Nam, Kyu Jin Choi, Kwang Du Lee, Jae Hyouck Choi, Kyung Hee Hong
  • Publication number: 20150188501
    Abstract: A power amplifying apparatus may include a first amplifying unit receiving power and amplifying a high frequency signal, a second amplifying unit receiving the power and amplifying the high frequency signal from the first amplifying unit, and a control unit controlling an operation of the first amplifying unit or the second amplifying unit. The first amplifying unit and the control unit are disposed on a complementary metal oxide semiconductor (CMOS) substrate, and the second amplifying unit is disposed on a GaAs substrate.
    Type: Application
    Filed: May 8, 2014
    Publication date: July 2, 2015
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Jae Hyouck CHOI, Jeong Hoon KIM, Suk Chan KANG, Joong Jin NAM, Kyu Jin CHOI, Kwang Du LEE, Kyung Hee HONG
  • Publication number: 20150188600
    Abstract: A switching circuit may include: the switching circuit includes a switching circuit unit including a first transistor and a second transistor connected to each other in series, the second transistor receiving a first control signal through a control terminal thereof, and an inverter connected between a control terminal of the first transistor and a first terminal of the first transistor. The inverter receives a second control signal and maintains a gate-source voltage level of the first transistor to a threshold voltage level of the first transistor or less, and levels of the first and second control signals are logically complementary to each other.
    Type: Application
    Filed: April 22, 2014
    Publication date: July 2, 2015
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Suk Chan KANG, Ho Kwon YOON, Jeong Hoon KIM, Joong Jin NAM, Kyu Jin CHOI, Kwang Du LEE, Jae Hyouck CHOI, Kyung Hee HONG
  • Publication number: 20150145606
    Abstract: A power amplifier may include a first amplifying unit receiving a first bias signal to amplify a power level of an input signal; an envelope detecting unit detecting an envelope of the input signal; a comparing circuit unit comparing a peak value of the detected envelope with a preset reference voltage; and a second amplifying unit amplifying the power level of the input signal according to a second bias signal set depending on a comparison result of the comparing circuit unit.
    Type: Application
    Filed: May 8, 2014
    Publication date: May 28, 2015
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Kwang Du LEE, Jeong Hoon KIM, Ho Kwon YOON, Joong Jin NAM, Kyu Jin CHOI, Suk Chan KANG, Jae Hyouck CHOI, Kyung Hee HONG
  • Publication number: 20140117920
    Abstract: There are provided a motor driving device and method. The motor driving device includes: an operation controlling unit generating a pulse width modulation (PWM) signal for controlling an operation of a motor; a driving controlling unit generating a short pulse signal using the PWM signal transferred from the operation controlling unit; and a power supplying unit supplying power to the motor using the short pulse signal, wherein the driving controlling unit controls the PWM signal depending on a control signal provided from the outside to generate the short pulse signal.
    Type: Application
    Filed: September 27, 2013
    Publication date: May 1, 2014
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventor: Joong Jin NAM
  • Patent number: 8536969
    Abstract: A transformer having a structure in which first and second substrates are vertically laminated, including: a plurality of input conductive lines disposed on the first substrate along a circumference thereof; a single output conductive line disposed co-planarly with the plurality of input conductive lines, and having one end connected to a ground; and an air bridge including a pair of conductive via holes formed in any one conductive line in an overlapped area in which the input and output conductive lines are intersected with each other to penetrate through the first substrate and a single piece of conductive line connecting the pair of conductive via holes to each other and disposed on the second substrate, thereby preventing a short-circuit between the input and output conductive lines.
    Type: Grant
    Filed: September 13, 2011
    Date of Patent: September 17, 2013
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Joong Jin Nam, Chul Hwan Yoon, Ki Joong Kim, Ju Young Park, Jun Goo Won, Youn Suk Kim
  • Patent number: 8390382
    Abstract: There is provided a power amplifier circuit capable of improving cross isolation between a high frequency band power coupler and a low frequency band power coupler, by directly transmitting power to the high frequency band power coupler and the low frequency band power coupler from a power amplifier, and forming a predetermined inductance circuit or an LC resonance circuit in a line transmitting the power to the high frequency band power coupler. The power amplifier circuit may include a power amplifying unit supplied with power from the outside and amplifying an input signal, a coupling unit having a high frequency band power coupler and a low frequency band power coupler, and an isolation unit including a first power line and a second power line, wherein the first power line has an inductor blocking signal interference generated in a predetermined frequency band.
    Type: Grant
    Filed: February 10, 2011
    Date of Patent: March 5, 2013
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Ki Joong Kim, Youn Suk Kim, Seong Geon Kim, Jun Goo Won, Joong Jin Nam