Patents by Inventor Joong-kon Son
Joong-kon Son has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9997668Abstract: A semiconductor light-emitting device includes a substrate, a first reflective layer disposed on the substrate and including first openings, a first conductivity-type semiconductor layer grown in and extending from the first openings and connected on the first reflective layer, a second reflective layer disposed on the first conductivity-type semiconductor layer and including second openings having lower surfaces disposed to be spaced apart from upper surfaces of the first openings, and a plurality of light-emitting nanostructures including nanocores extending from the second openings and formed of a first conductivity-type semiconductor material, and active layers and second conductivity-type semiconductor layers sequentially disposed on the nanocores.Type: GrantFiled: November 30, 2016Date of Patent: June 12, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kyung Wook Hwang, Joong Kon Son
-
Publication number: 20170084783Abstract: A semiconductor light-emitting device includes a substrate, a first reflective layer disposed on the substrate and including first openings, a first conductivity-type semiconductor layer grown in and extending from the first openings and connected on the first reflective layer, a second reflective layer disposed on the first conductivity-type semiconductor layer and including second openings having lower surfaces disposed to be spaced apart from upper surfaces of the first openings, and a plurality of light-emitting nanostructures including nanocores extending from the second openings and formed of a first conductivity-type semiconductor material, and active layers and second conductivity-type semiconductor layers sequentially disposed on the nanocores.Type: ApplicationFiled: November 30, 2016Publication date: March 23, 2017Inventors: Kyung Wook HWANG, Joong Kon SON
-
Patent number: 9543470Abstract: A semiconductor light emitting device includes a substrate, a reflective layer and a light emitting structure. The reflective layer includes at least two porous layers alternately disposed on the substrate and having different porosities. The light emitting structure is disposed on the reflective layer and includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer.Type: GrantFiled: August 5, 2014Date of Patent: January 10, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kyung Wook Hwang, Jae Hyeok Heo, Joong Kon Son
-
Patent number: 9515224Abstract: A semiconductor light-emitting device includes a substrate, a first reflective layer disposed on the substrate and including first openings, a first conductivity-type semiconductor layer grown in and extending from the first openings and connected on the first reflective layer, a second reflective layer disposed on the first conductivity-type semiconductor layer and including second openings having lower surfaces disposed to be spaced apart from upper surfaces of the first openings, and a plurality of light-emitting nanostructures including nanocores extending from the second openings and formed of a first conductivity-type semiconductor material, and active layers and second conductivity-type semiconductor layers sequentially disposed on the nanocores.Type: GrantFiled: March 18, 2015Date of Patent: December 6, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kyung Wook Hwang, Joong Kon Son
-
Patent number: 9472729Abstract: A method of manufacturing a semiconductor light emitting device package includes arranging a plurality of light emitting structures on a support substrate, each light emitting structure including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, bonding a light transmissive substrate to the plurality of light emitting structures, the light transmissive substrate having a plurality of wavelength conversion regions corresponding to the plurality of light emitting structures, respectively, removing the support substrate from the plurality of light emitting structures, and separating individual semiconductor light emitting device packages from one another by removing at least a portion of the light transmissive substrate.Type: GrantFiled: January 22, 2015Date of Patent: October 18, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sung Mok Hong, Joong Kon Son
-
Publication number: 20160056336Abstract: A semiconductor light-emitting device includes a substrate, a first reflective layer disposed on the substrate and including first openings, a first conductivity-type semiconductor layer grown in and extending from the first openings and connected on the first reflective layer, a second reflective layer disposed on the first conductivity-type semiconductor layer and including second openings having lower surfaces disposed to be spaced apart from upper surfaces of the first openings, and a plurality of light-emitting nanostructures including nanocores extending from the second openings and formed of a first conductivity-type semiconductor material, and active layers and second conductivity-type semiconductor layers sequentially disposed on the nanocores.Type: ApplicationFiled: March 18, 2015Publication date: February 25, 2016Inventors: Kyung Wook HWANG, Joong Kon SON
-
Publication number: 20150364639Abstract: A method of manufacturing a semiconductor light emitting device package includes arranging a plurality of light emitting structures on a support substrate, each light emitting structure including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, bonding a light transmissive substrate to the plurality of light emitting structures, the light transmissive substrate having a plurality of wavelength conversion regions corresponding to the plurality of light emitting structures, respectively, removing the support substrate from the plurality of light emitting structures, and separating individual semiconductor light emitting device packages from one another by removing at least a portion of the light transmissive substrate.Type: ApplicationFiled: January 22, 2015Publication date: December 17, 2015Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sung Mok HONG, Joong Kon SON
-
Publication number: 20150129833Abstract: A light emitting device package includes a package substrate, a light emitting device, a resin portion and a light scattering agent. The light emitting device is disposed on the package substrate and includes a plurality of light emitting nanostructures. The resin portion is disposed on the package substrate and seals the light emitting device. The light scattering agent is dispersed in the resin portion and includes a material having a refractive index greater than a refractive index of a material forming the resin portion.Type: ApplicationFiled: August 7, 2014Publication date: May 14, 2015Inventors: Mi Jeong YUN, Joong Kon SON, Yoichi KUROKAWA, Kyung Wook HWANG
-
Publication number: 20150041822Abstract: A semiconductor light emitting device includes a substrate, a reflective layer and a light emitting structure. The reflective layer includes at least two porous layers alternately disposed on the substrate and having different porosities. The light emitting structure is disposed on the reflective layer and includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer.Type: ApplicationFiled: August 5, 2014Publication date: February 12, 2015Inventors: Kyung Wook HWANG, Jae Hyeok HEO, Joong Kon SON
-
Patent number: 8746937Abstract: A head lamp assembly including a housing; a plurality of head lamp cases installed in the housing, wherein each head lamp case comprises a light emitting diode (LED) light source, and a heat sink for dissipating heat generated from the LED light source; and a plurality of ventilating fans for circulating air in the plurality of head lamp cases and installed in the plurality of head lamp cases, respectively. Accordingly, the ventilating fans installed in the head lamp cases have opposite ventilating directions, and thus air is circulated in the head lamp cases by the ventilating fans to thus improve heat dissipation effects.Type: GrantFiled: September 8, 2011Date of Patent: June 10, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Jong-pa Hong, Hyoung-cheol Cho, Hee-seok Park, Joong-kon Son
-
Patent number: 8723206Abstract: A semiconductor light emitting device has a semiconductor laminate including first and second conductivity type semiconductor layers respectively providing first and second main surfaces and an active layer. The semiconductor laminate is divided into first and second regions. At least one contact hole is formed to pass through the active layer from the second main surface of the first region. A first electrode is formed on the second main surface to be connected to the first conductivity type semiconductor layer of the first region and the second conductivity type semiconductor layer of the second region. A second electrode is formed on the second main surface of the first region to be connected to the second conductivity type semiconductor layer of the first region and the first conductivity type semiconductor layer of the second region.Type: GrantFiled: September 9, 2011Date of Patent: May 13, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Grigory Onushkin, Oleg Ledyaev, Jong Hoon Lim, Joong Kon Son, Pun Jae Choi
-
Publication number: 20130062638Abstract: A semiconductor light emitting device has a semiconductor laminate including first and second conductivity type semiconductor layers respectively providing first and second main surfaces and an active layer. The semiconductor laminate is divided into first and second regions. At least one contact hole is formed to pass through the active layer from the second main surface of the first region. A first electrode is formed on the second main surface to be connected to the first conductivity type semiconductor layer of the first region and the second conductivity type semiconductor layer of the second region. A second electrode is formed on the second main surface of the first region to be connected to the second conductivity type semiconductor layer of the first region and the first conductivity type semiconductor layer of the second region.Type: ApplicationFiled: September 9, 2011Publication date: March 14, 2013Inventors: Grigory ONUSHKIN, Oleg Ledyaev, Jong Hoon Lim, Joong Kon Son, Pun Jae Choi
-
Patent number: 8304791Abstract: A nitride-based semiconductor light emitting device having a structure capable of improving optical output performance, and methods of manufacturing the same are provided. The active layer may include a first barrier layer formed of InxGa(1-x)N (0.01?x?0.05) on a n-type semiconductor layer, a first diffusion barrier layer formed of InyGa(1-y)N (0?y<0.01) on the first barrier layer, and doped with an anti-defect agent including at least one of an N (nitrogen) element and a Si (silicon) element, a quantum well layer formed of InzGa(1-z)N (0.25?z?0.35) on the first diffusion barrier layer, a second diffusion barrier layer formed of InyGa(1-y)N (0?y<0.01) on the quantum well layer, and doped with an anti-defect agent including at least one of an N element and a Si element, and a second barrier layer formed of InxGa(1-x)N (0.01?x?0.05) on the second diffusion barrier layer.Type: GrantFiled: June 19, 2007Date of Patent: November 6, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Tan Sakong, Joong-kon Son, Ho-sun Paek, Sung-nam Lee
-
Patent number: 8279904Abstract: A semiconductor light-emitting device including an active layer is provided. The light-emitting device includes an active layer between an n-type semiconductor layer and a p-type semiconductor layer. The active layer includes a quantum well layer formed of Inx1Ga(1?x1)N, where 0<x1?1, barrier layers formed of Inx2Ga(1?x2)N, where 0?x2<1, on opposite surfaces of the quantum well layer, and a diffusion preventing layer formed between the quantum well layer and at least one of the barrier layers. Due to the diffusion preventing layer between the quantum well layer and the barrier layers in the active layer, the light emission efficiency increases.Type: GrantFiled: June 19, 2007Date of Patent: October 2, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Tan Sakong, Joong-kon Son, Ho-sun Paek, Sung-nam Lee
-
Patent number: 8262227Abstract: Provided is a laser display device. The laser display device may include at least one light source configured to emit at least one laser beam, at least one scanning unit configured to perform a scanning with the at least one laser beam, and an image forming unit configured to generate excitation light and scattering light by receiving the at least one laser beam from the scanning unit to form an image.Type: GrantFiled: March 23, 2011Date of Patent: September 11, 2012Assignee: Samsung LED Co., Ltd.Inventors: Joong-kon Son, Seoung-jae Im, Ok-hyun Nam
-
Patent number: 8253154Abstract: A lens for a light emitting diode package and a light emitting diode package having the same have simple structures and increase light extraction efficiency by preventing light emitted from a light emitting diode chip from being internally reflected by a lens surface through a structural change in the lens surface.Type: GrantFiled: October 28, 2009Date of Patent: August 28, 2012Assignee: Samsung Led Co., Ltd.Inventors: Soo Jin Jung, Joong Kon Son, Gwan Su Lee
-
Patent number: 8247980Abstract: There is provided an LED driving circuit. The LED driving circuit according to an aspect of the invention may include: at least one ladder circuit including: (n?1) number (here, n is a positive integer satisfying n?2) of first branches provided between first and second junction points, and connected in-line with each other by n number of first middle junction points, (n?1) number of second branches arranged in parallel with the first branches, and connected in-line with each other by n number of second middle junction points between the first and second junction points, and n number of middle branches connecting m-th first and second middle junction points to each other, wherein at least one LED device is disposed on each of the first, second, and middle branches. Here, the number of LED devices included in each of the first and second branches is greater than the number of LED devices included in each of the middle branches.Type: GrantFiled: October 31, 2008Date of Patent: August 21, 2012Assignee: Samsung LED Co., Ltd.Inventors: Young Jin Lee, Joong Kon Son, Hyung Kun Kim, Jung Ja Yang, Grigory Onushkin
-
Publication number: 20120092885Abstract: A head lamp assembly including a housing; a plurality of head lamp cases installed in the housing, wherein each head lamp case comprises a light emitting diode (LED) light source, and a heat sink for dissipating heat generated from the LED light source; and a plurality of ventilating fans for circulating air in the plurality of head lamp cases and installed in the plurality of head lamp cases, respectively. Accordingly, the ventilating fans installed in the head lamp cases have opposite ventilating directions, and thus air is circulated in the head lamp cases by the ventilating fans to thus improve heat dissipation effects.Type: ApplicationFiled: September 8, 2011Publication date: April 19, 2012Inventors: Jong-pa HONG, Hyoung-cheol CHO, Hee-seok PARK, Joong-kon SON
-
Patent number: 8129260Abstract: A semiconductor substrate includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer is formed of II-VI-group semiconductor material, III-V-group semiconductor material, or II-VI-group semiconductor material and III-V-group semiconductor material. At least one amorphous region and at least one crystalloid region are formed in the first semiconductor layer. The second semiconductor layer is formed on the first semiconductor layer and is crystal-grown from the at least one crystalloid region. A method of manufacturing a semiconductor substrate includes preparing a growth substrate; crystal-growing the first semiconductor layer on the growth substrate; forming the at least one amorphous region and the at least one crystalloid region in the first semiconductor layer; and forming a second semiconductor layer on the first semiconductor layer using the at least one amorphous region as a mask and the at least one crystalloid region as a seed.Type: GrantFiled: May 24, 2007Date of Patent: March 6, 2012Assignee: Samsung LED Co., Ltd.Inventors: Ho-sun Paek, Youn-joon Sung, Kyoung-ho Ha, Joong-kon Son, Sung-nam Lee
-
Patent number: 8068661Abstract: Disclosed are a light emitting diode (LED) inspection apparatus, which can determine whether an LED has a defect such as leakage current, without making physical contact with the LED being inspected, and an LED inspection method thereof. The LED inspection apparatus includes an ultraviolet emission unit emitting UV light to an LED, an image generation unit generating an image of the LED to which the UV light is emitted, and a control unit obtaining color or intensity information of the LED from the image of the LED and determining, based on the color information, whether the LED is defective.Type: GrantFiled: November 21, 2008Date of Patent: November 29, 2011Assignee: Samsung LED Co., Ltd.Inventors: Grigory Onushkin, Joong Kon Son, Jong Hoon Lim, Sang Su Hong