Patents by Inventor Jose-Antonio Marin
Jose-Antonio Marin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11450509Abstract: A method and apparatus for plasma processing of substrates is provided. A processing chamber has a substrate support and a lid assembly facing the substrate support. The lid assembly has a plasma source that comprises a coil disposed within a conductive plate, which may comprise nested conductive rings. The coil is substantially coplanar with the conductive plate, and insulated therefrom by an insulator that fits within a channel formed in the conductive plate, or nests within the conductive rings. A field concentrator is provided around the coil, and insulated therefrom by isolators. The plasma source is supported from a conductive support plate. A gas distributor supplies gas to the chamber through a central opening of the support plate and plasma source from a conduit disposed through the conductive plate.Type: GrantFiled: January 6, 2020Date of Patent: September 20, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Canfeng Lai, Jeffrey Tobin, Peter I. Porshnev, Jose Antonio Marin
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Publication number: 20220093428Abstract: Semiconductor processing systems are described to measure levels of atomic oxygen using an atomic oxygen sensor positioned within a substrate processing region of a substrate processing chamber. The processing systems may include a semiconductor chamber that has a chamber body which defines a substrate processing region. The processing chamber may also include a substrate support positioned within the substrate processing region. The atomic oxygen sensor may be positioned proximate to the substrate support in the substrate processing region of the chamber. Also described are semiconductor processing methods that include detecting a concentration of atomic oxygen in the substrate processing region with an atomic oxygen sensor positioned in the semiconductor processing chamber. The atomic oxygen sensor may include at least one electrode comprising a material selectively permeable to atomic oxygen over molecular oxygen, and may further include a solid electrolyte that selectively conducts atomic oxygen ions.Type: ApplicationFiled: September 21, 2020Publication date: March 24, 2022Applicant: Applied Materials, Inc.Inventors: Bruce E. Adams, Samuel C. Howells, Martin A. Hilkene, Jose Antonio Marin
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Publication number: 20200144027Abstract: A method and apparatus for plasma processing of substrates is provided. A processing chamber has a substrate support and a lid assembly facing the substrate support. The lid assembly has a plasma source that comprises a coil disposed within a conductive plate, which may comprise nested conductive rings. The coil is substantially coplanar with the conductive plate, and insulated therefrom by an insulator that fits within a channel formed in the conductive plate, or nests within the conductive rings. A field concentrator is provided around the coil, and insulated therefrom by isolators. The plasma source is supported from a conductive support plate. A gas distributor supplies gas to the chamber through a central opening of the support plate and plasma source from a conduit disposed through the conductive plate.Type: ApplicationFiled: January 6, 2020Publication date: May 7, 2020Inventors: Canfeng LAI, Jeffrey TOBIN, Peter I. PORSHNEV, Jose Antonio MARIN
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Patent number: 10529541Abstract: A method and apparatus for plasma processing of substrates is provided. A processing chamber has a substrate support and a lid assembly facing the substrate support. The lid assembly has a plasma source that comprises a coil disposed within a conductive plate, which may comprise nested conductive rings. The coil is substantially coplanar with the conductive plate, and insulated therefrom by an insulator that fits within a channel formed in the conductive plate, or nests within the conductive rings. A field concentrator is provided around the coil, and insulated therefrom by isolators. The plasma source is supported from a conductive support plate. A gas distributor supplies gas to the chamber through a central opening of the support plate and plasma source from a conduit disposed through the conductive plate.Type: GrantFiled: March 17, 2017Date of Patent: January 7, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Canfeng Lai, Jeffrey Tobin, Peter I. Porshnev, Jose Antonio Marin
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Patent number: 10077508Abstract: A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.Type: GrantFiled: January 26, 2017Date of Patent: September 18, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Joseph M. Ranish, Paul Brillhart, Jose Antonio Marin, Satheesh Kuppurao, Balasubramanian Ramachandran, Swaminathan T. Srinivasan, Mehmet Tugrul Samir
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Publication number: 20180138031Abstract: Embodiments of the present invention generally relate to chambers and methods of processing substrates therein. The chambers generally include separate process gas and purge gas regions. The process gas region and purge gas region each have a respective gas inlet and gas outlet. The methods generally include positioning a substrate on a substrate support within the chamber. The plane of the substrate support defines the boundary between a process gas region and purge gas region. Purge gas is introduced into the purge gas region through at least one purge gas inlet, and removed from the purge gas region using at least one purge gas outlet. The process gas is introduced into the process gas region through at least one process gas inlet, and removed from the process gas region through at least one process gas outlet. The process gas is thermally decomposed to deposit a material on the substrate.Type: ApplicationFiled: January 15, 2018Publication date: May 17, 2018Inventors: Joseph M. RANISH, Paul BRILLHART, Jose Antonio MARIN, Satheesh KUPPURAO, Balasubramanian RAMACHANDRAN, Swaminathan T. SRINIVASAN, Mehmet Tugrul SAMIR
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Patent number: 9870919Abstract: Embodiments of the present invention generally relate to chambers and methods of processing substrates therein. The chambers generally include separate process gas and purge gas regions. The process gas region and purge gas region each have a respective gas inlet and gas outlet. The methods generally include positioning a substrate on a substrate support within the chamber. The plane of the substrate support defines the boundary between a process gas region and purge gas region. Purge gas is introduced into the purge gas region through at least one purge gas inlet, and removed from the purge gas region using at least one purge gas outlet. The process gas is introduced into the process gas region through at least one process gas inlet, and removed from the process gas region through at least one process gas outlet. The process gas is thermally decomposed to deposit a material on the substrate.Type: GrantFiled: April 17, 2013Date of Patent: January 16, 2018Assignee: Applied Materials, Inc.Inventors: Joseph M. Ranish, Paul Brillhart, Jose Antonio Marin, Satheesh Kuppurao, Balasubramanian Ramachandran, Swaminathan T. Srinivasan, Mehmet Tugrul Samir
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Publication number: 20170365288Abstract: Methods and apparatus for forming substrates having magnetically patterned surfaces is provided. A magnetic layer comprising one or more materials having magnetic properties is formed on a substrate. The magnetic layer is subjected to a patterning process in which selected portions of the surface of the magnetic layer are altered such that the altered portions have different magnetic properties from the non-altered portions without changing the topography of the substrate. A protective layer and a lubricant layer are deposited over the patterned magnetic layer. The patterning is accomplished through a number of processes that expose substrates to energy of varying forms. Apparatus and methods disclosed herein enable processing of two major surfaces of a substrate simultaneously, or sequentially by flipping. In some embodiments, magnetic properties of the substrate surface may be uniformly altered by plasma exposure and then selectively restored by exposure to patterned energy.Type: ApplicationFiled: June 19, 2017Publication date: December 21, 2017Inventors: Majeed A. Foad, Jacob Newman, Jose Antonio Marin, Daniel J. Hoffman, Stephen Moffatt, Steven Verhaverbeke
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Publication number: 20170194128Abstract: A method and apparatus for plasma processing of substrates is provided. A processing chamber has a substrate support and a lid assembly facing the substrate support. The lid assembly has a plasma source that comprises an inductive coil disposed within a conductive plate, which may comprise nested conductive rings. The inductive coil is substantially coplanar with the conductive plate, and insulated therefrom by an insulator that fits within a channel formed in the conductive plate, or nests within the conductive rings. A field concentrator is provided around the inductive coil, and insulated therefrom by isolators. The plasma source is supported from a conductive support plate. A gas distributor supplies gas to the chamber through a central opening of the support plate and plasma source from a conduit disposed through the conductive plate.Type: ApplicationFiled: March 17, 2017Publication date: July 6, 2017Inventors: Canfeng LAI, Jeffrey TOBIN, Peter I. PORSHNEV, Jose Antonio MARIN
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Patent number: 9685186Abstract: Methods and apparatus for forming substrates having magnetically patterned surfaces is provided. A magnetic layer comprising one or more materials having magnetic properties is formed on a substrate. The magnetic layer is subjected to a patterning process in which selected portions of the surface of the magnetic layer are altered such that the altered portions have different magnetic properties from the non-altered portions without changing the topography of the substrate. A protective layer and a lubricant layer are deposited over the patterned magnetic layer. The patterning is accomplished through a number of processes that expose substrates to energy of varying forms. Apparatus and methods disclosed herein enable processing of two major surfaces of a substrate simultaneously, or sequentially by flipping. In some embodiments, magnetic properties of the substrate surface may be uniformly altered by plasma exposure and then selectively restored by exposure to patterned energy.Type: GrantFiled: February 11, 2010Date of Patent: June 20, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Majeed A. Foad, Jacob Newman, Jose Antonio Marin, Daniel J. Hoffman, Stephen Moffatt, Steven Verhaverbeke
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Publication number: 20170130359Abstract: A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.Type: ApplicationFiled: January 26, 2017Publication date: May 11, 2017Inventors: Joseph M. RANISH, Paul BRILLHART, Jose Antonio MARIN, Satheesh KUPPURAO, Balasubramanian RAMACHANDRAN, Swaminathan T. SRINIVASAN, Mehmet Tugrul SAMIR
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Patent number: 9580835Abstract: A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.Type: GrantFiled: January 4, 2016Date of Patent: February 28, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Joseph M. Ranish, Paul Brillhart, Jose Antonio Marin, Satheesh Kuppurao, Balasubramanian Ramachandran, Swaminathan T. Srinivasan, Mehmet Tugrul Samir
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Publication number: 20160138188Abstract: A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.Type: ApplicationFiled: January 4, 2016Publication date: May 19, 2016Inventors: Joseph M. RANISH, Paul BRILLHART, Jose Antonio MARIN, Satheesh KUPPURAO, Balasubramanian RAMACHANDRAN, Swaminathan T. SRINIVASAN, Mehmet Tugrul SAMIR
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Patent number: 9230837Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a vacuum chamber having a dome and a floor. A substrate support is disposed inside the vacuum chamber. A plurality of thermal lamps are arranged in a lamphead and positioned proximate the floor of the vacuum chamber. A reflector is disposed proximate the dome, where the reflector and the dome together define a thermal control space. The substrate processing apparatus further includes a plurality of power supplies coupled to the thermal lamps and a controller for adjusting the power supplies to control a temperature in the vacuum chamber.Type: GrantFiled: May 30, 2014Date of Patent: January 5, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Joseph M. Ranish, Paul Brillhart, Jose Antonio Marin, Satheesh Kuppurao, Balasubramanian Ramachandran, Swaminathan T. Srinivasan, Mehmet Tugrul Samir
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Patent number: 9117867Abstract: Embodiments of electrostatic chucks for substrate processing are provided herein. In some embodiments, an electrostatic chuck may include a puck for supporting a substrate, the puck formed from a dielectric material and having a chucking electrode disposed within the puck proximate a support surface of the puck to electrostatically retain the substrate when disposed on the puck; a base having a ring extending from the base to support the puck; and a spacer disposed between the base and the puck to support the puck above the base such that a gap is formed between the puck and the base, wherein the spacer supports the puck proximate a peripheral edge of the puck.Type: GrantFiled: June 28, 2012Date of Patent: August 25, 2015Assignee: APPLIED MATERIALS, INC.Inventors: Bernard L. Hwang, Jose Antonio Marin, Son T. Nguyen
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Patent number: 8911554Abstract: A method and apparatus for processing multiple substrates simultaneously is provided. Each substrate may have two major active surfaces to be processed. The apparatus has a substrate handling module and a substrate processing module. The substrate handling module has a loader assembly, a flipper assembly, and a factory interface. Substrates are disposed on a substrate carrier at the loader assembly. The flipper assembly is used to flip all the substrates on a substrate carrier in the event two-sided processing is required. The factory interface positions substrate carriers holding substrates for entry into and exit from the substrate processing module. The substrate processing module comprises a load-lock, a transfer chamber, and a plurality of processing chambers, each configured to process multiple substrates disposed on a substrate carrier.Type: GrantFiled: January 4, 2011Date of Patent: December 16, 2014Assignee: Applied Materials, Inc.Inventors: Steven Verhaverbeke, Jose Antonio Marin
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Publication number: 20140273419Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a vacuum chamber having a dome and a floor. A substrate support is disposed inside the vacuum chamber. A plurality of thermal lamps are arranged in a lamphead and positioned proximate the floor of the vacuum chamber. A reflector is disposed proximate the dome, where the reflector and the dome together define a thermal control space. The substrate processing apparatus further includes a plurality of power supplies coupled to the thermal lamps and a controller for adjusting the power supplies to control a temperature in the vacuum chamber.Type: ApplicationFiled: May 30, 2014Publication date: September 18, 2014Inventors: Joseph M. RANISH, Paul BRILLHART, Jose Antonio MARIN, Satheesh KUPPURAO, Balasubramanian RAMACHANDRAN, Swaminathan T. SRINIVASAN, Mehmet Tugrul SAMIR
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Publication number: 20140199785Abstract: A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.Type: ApplicationFiled: March 12, 2013Publication date: July 17, 2014Inventors: Joseph M. RANISH, Paul BRILLHART, Jose Antonio MARIN, Satheesh KUPPURAO, Balasubramanian RAMACHANDRAN, Swaminathan T. SRINIVASAN, Mehmet Tugrul SAMIR
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Patent number: 8772055Abstract: A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.Type: GrantFiled: March 12, 2013Date of Patent: July 8, 2014Assignee: Applied Materials, Inc.Inventors: Joseph M. Ranish, Paul Brillhart, Jose Antonio Marin, Satheesh Kuppurao, Balasubramanian Ramachandran, Swaminathan T. Srinivasan, Mehmet Tugrul Samir
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Publication number: 20130288460Abstract: Embodiments of the present invention generally relate to chambers and methods of processing substrates therein. The chambers generally include separate process gas and purge gas regions. The process gas region and purge gas region each have a respective gas inlet and gas outlet. The methods generally include positioning a substrate on a substrate support within the chamber. The plane of the substrate support defines the boundary between a process gas region and purge gas region. Purge gas is introduced into the purge gas region through at least one purge gas inlet, and removed from the purge gas region using at least one purge gas outlet. The process gas is introduced into the process gas region through at least one process gas inlet, and removed from the process gas region through at least one process gas outlet. The process gas is thermally decomposed to deposit a material on the substrate.Type: ApplicationFiled: April 17, 2013Publication date: October 31, 2013Inventors: Joseph M. RANISH, Paul BRILLHART, Jose Antonio MARIN, Satheesh KUPPURAO, Balasubramanian RAMACHANDRAN, Swaminathan T. SRINIVASAN, Mehmet Tugrul SAMIR