Abstract: A distributed-feed back semiconductor laser diode comprises a substrate of n-type conductivity GaAs having a pair of opposed surfaces, a pair of sides and a pair of ends. In sequence on one of the opposed surfaces are a first clad layer of n-type conductivity graded AlGaAs; a first confining layer of undoped AlGaAs; a first quantum well layer of undoped GaAs; a barrier layer of undoped AlGaAs; a second quantum well layer of undoped GaAs; a second confining layer of undoped AlGaAs; a spacer layer of p-type conductivity graded AlGaAs; a plurality of spaced, parallel grating bars of p-type conductivity AlGaAs extending across the spacer layer parallel to the ends of the substrate; a second clad layer of p-type conductivity graded AlGaAs over and between the grating bars; and contact layer of p+ type conductivity GaAs. A first conductive contact layer contacts the contact layer and a second conductive contact layer is on the other opposed surface of the substrate.

Abstract: An optically coupled FET comprised of bottom layer, a top layer in which FET is formed and an intermediate layer having a waveguide communicating with a grating in registration with the FET.

Abstract: The present invention relates to an optoelectronic integrated circuit having a substantially planar surface and which includes at least one laser diode and at least one field effect transistor. The integrated circuit comprises a substrate of semi-insulating GaAs having on a surface thereof in succession a first clad layer, a first confinement layer, a quantum well active layer, a second confinement layer, a second clad layer and an FET active layer. The FET active layer is of a material having good field effect transistor characteristics, such as N type GaAs or N type A1GaAs over a layer of undoped GaAs. The quantum well active layer is formed of alternating layers of undoped GaAs and a material which is capable of generating light of a wavelength longer than can be absorbed by the FET active layer, such as undoped InGaAs. The laser diode includes spaced contact regions of opposite conductivity type extending through the layers to the quantum well active layer.

Abstract: A far field optical scanning system comprising a coherent light source, a waveguide array phase retardation means and a far field optical detector is characterized by a waveguide array having a linearly increasing spacing between adjacent parallel array elements so as to minimize the production of unwanted sidelobes.

Abstract: High speed optoelectronic devices which are suitable for use in an optical integrated circuit design. The devices comprise a monolithic planar structure wherein exciton-resonant light propagates along a single mode waveguide containing a single quantum well as the absorbing media. Optical absorption is controlled by the bleaching effect induced by free carriers whose electrical conduction makes possible optical detection and monolithic high speed, gate-controlled transistor structures.