Abstract: The present disclosure relates to a diode laser and a method for producing the same. In one embodiment, the diode laser, comprises a passive pedestal layer structure, an active ridge layer structure positioned over the passive pedestal layer structure, a p-contact contacting a top side of the active ridge layer structure, a first n-contact disposed on a first side of the active ridge layer structure, a second n-contact disposed on a second side of the active ridge layer structure and, an n-final-metal layer connecting the first n-contact metal and the second n-contact metal, wherein the n-final-metal layer is continuous over the active ridge layer structure.

Abstract: The present disclosure relates to a diode laser and a method for producing the same. In one embodiment, the diode laser, comprises a passive pedestal layer structure, an active ridge layer structure positioned over the passive pedestal layer structure, a p-contact contacting a top side of the active ridge layer structure, a first n-contact disposed on a first side of the active ridge layer structure, a second n-contact disposed on a second side of the active ridge layer structure and, an n-final-metal layer connecting the first n-contact metal and the second n-contact metal, wherein the n-final-metal layer is continuous over the active ridge layer structure.

Abstract: A chip scale atomic clock is disclosed that provides a low power atomic time/frequency reference that employs direct RF-interrogation on an end-state transition.

Abstract: A chip scale atomic clock is disclosed that provides a low power atomic time/frequency reference that employs direct RF-interrogation on an end-state transition.

Abstract: A chip scale atomic clock is disclosed that provides a low power atomic time/frequency reference that employs direct RF-interrogation on an end-state transition.

Abstract: A chip scale atomic clock is disclosed that provides a low power atomic time/frequency reference that employs direct RF-interrogation on an end-state transition.

Abstract: A distributed feedback ridge waveguide semiconductor laser diode having a waveguide region with a typical thickness of at least 500 nanometers and an effective refractive index difference between the ridge structure and exposed portions of the waveguide region which surround the ridge structure of less than 0.001. This permits the width of the ridge to be expanded beyond 3.5 microns thus translating directly to higher power outputs at 1.55 &mgr;m wavelengths, where carrier diffusion and carrier heating limit current density injected into the active region.

Abstract: A distributed feedback ridge waveguide semiconductor laser diode having a waveguide region with a typical thickness of at least 500 nanometers and an effective refractive index difference between the ridge structure and exposed portions of the waveguide region which surround the ridge structure of less than 0.001. This permits the width of the ridge to be expanded beyond 3.5 microns thus translating directly to higher power outputs at 1.55 &mgr;m wavelengths, where carrier diffusion and carrier heating limit current density injected into the active region.

Abstract: One embodiment of the present invention is an exemplary wavelength selective optical coupling device. This exemplary device includes two waveguides, a ring or disc resonator, and resonator coupling elements. The waveguides are disposed on top of a substrate, not in contact with each other. The waveguides may transmit multiple wavelengths of light. The ring or disc resonator includes a dielectric member which extends parallel to the top of the substrate and overlaps, without contacting, the waveguides. The resonator is sized to resonate at a subset of resonant wavelengths. The resonator coupling elements couple the resonator to the substrate. The resonator coupling elements may include a bridge coupled to the top surface of the substrate and electrically coupled to control circuitry within the substrate. A waveguide coupling signal from the control circuitry causes the bridge to deform, translating the resonator up and down, thereby intermittently coupling and decoupling the waveguides.

Abstract: A method and apparatus for configuring and tuning a crystal by selectively controlling a fluid supplied to a plurality of nodes within a substrate. The apparatus comprises a substrate having at least one node that can be selectively supplied with a liquid that will change the material property of the node. The node may be a spherical cavity in a three-dimensional structure, a cylindrical aperture in two-dimensional structure, or a cavity in a one-dimensional structure. The node or nodes in the substrate are coupled to a fluid distribution assembly that selectively alters the material property of the nodes. The material property may be changed by moving the fluid or material in a fluid, using electrohydrodynamic pumping, electroosmotic pumping, electrophoresis, thermocapillarity, electrowetting or electrocapillarity. The change in the material property in at least one of the nodes changes the electromagnetic radiation filtering or switching characteristics of the crystal.

Abstract: A distributed feedback ridge waveguide semiconductor laser diode having a waveguide region with a typical thickness of at least 500 nanometers and an effective refractive index difference between the ridge structure and exposed portions of the waveguide region which surround the ridge structure of less than 0.001. This permits the width of the ridge to be expanded beyond 3.5 microns thus translating directly to higher power outputs at 1.55 &mgr;m wavelengths, where carrier diffusion and carrier heating limit current density injected into the active region.

Abstract: A method and apparatus for configuring and tuning a crystal by selectively controlling a fluid supplied to a plurality of nodes within a substrate. The apparatus comprises a substrate having at least one node that can be selectively supplied with a liquid that will change the material property of the node. The node may be a spherical cavity in a three-dimensional structure, a cylindrical aperture in two-dimensional structure, or a cavity in a one-dimensional structure. The node or nodes in the substrate are coupled to a fluid distribution assembly that selectively alters the material property of the nodes. The material property may be changed by moving the fluid or material in a fluid, using electrohydrodynamic pumping, electroosmotic pumping, electrophoresis, thermocapillarity, electrowetting or electrocapillarity. The change in the material property in at least one of the nodes changes the electromagnetic radiation filtering or switching characteristics of the crystal.

Abstract: A wavelength division multiplex optical crossconnect system and add/drop multiplexer including a dense wavelength division multiplexed (DWDM) source which preferably includes a multiwavelength mode-locked (MWML) external cavity laser as a fundamental sub-circuit for optically crossconnecting several multi-wavelength data channels onto similar data channels having an interchanged set of optical wavelengths. The optical crossconnect architecture allows the rearrangement of multiple logical channels in a timely manner to support protection switching, traffic grooming, and other telecommunications network functions. The crossconnect architecture further supports multiple physical fibers into and out of the crossconnect, where each fiber carries multiple logical channels on multiple wavelengths of light which are assigned particular wavelength carriers, crossconnected onto any other physical fiber, and assigned another wavelength carrier.

Abstract: One embodiment of the present invention is an exemplary wavelength selective optical coupling device. This exemplary device includes two waveguides, a ring or disc resonator, and resonator coupling means. The waveguides are disposed on top of a substrate, not in contact with each other. The waveguides may transmit multiple wavelengths of light. The ring or disc resonator includes a dielectric member which extends parallel to the top of the substrate and overlaps, without contacting, the waveguides. The resonator is sized to resonate at a subset of resonant wavelengths. The resonator coupling means couple the resonator to the substrate. The resonator coupling means may include a bridge coupled to the top surface of the substrate and electrically coupled to control circuitry within the substrate. A waveguide coupling signal from the control circuitry causes the bridge to deform, translating the resonator up and down, thereby intermittently coupling and decoupling the waveguides.

Abstract: A multiwavelength mode-locked (MWML) angled-stripe SOA laser that emits multiple discrete groups of wavelengths simultaneously in a short time interval, where each group is located at a wavelength suitable to wavelength division multiplexed optical transmission. Feedback and/or feedthrough optics are combined with a angled-stripe SOA to provide different laser embodiments. The actively mode locked MWML laser emits individual spectral components at a plurality of wavelengths simultaneously. The optics are coupled to one or more angled-stripe SOA ports in reflective or optical ring resonator configurations to provide simultaneous feedback at the plurality of wavelengths and to provide substantially identical round-trip travel times and net gains within the lasing cavity for pulses at each of the plurality of wavelengths. A MWML laser so formed is particularly useful as a multiwavelength source for optical signal processing and transmission systems and can be placed in a hermetically sealed package.

Abstract: A multi-wavelength mode-locked dense wavelength division multiplexed (MWML-DWDM) optical transmission method and system including a MWML-DWDM optical transmitter having a multiwavelength mode-locked (MWML) laser which generates a wavelength-ordered repetitive periodic (WORP) sequence of discrete optical pulses for modulation with data carried by at least one electronic carrier. Signals from multiple telecommunications transmission interfaces are multiplexed together by a high speed electronic time domain multiplexer to form a single multiplexed high speed digital transmission stream that is encoded onto the optical pulse stream output by the MWML-DWDM optical transmitter by an optical modulator so as to provide multiple channels of information carried on a DWDM data stream over an optical fiber to a receiver where the data is received and decoded.

Abstract: A semiconductor laser diode having increased efficiency and therefore increased power output. The laser diode includes a body of a semiconductor material having therein a waveguide region which is not intentionally doped so as to have a doping level of no greater than about 5.times.10.sup.16 /cm.sup.3. Within the waveguide region is means, such as at least one quantum well region, for generating an optical mode of photons. Clad regions of opposite conductivity type are on opposite sides of the waveguide region. The thickness of the waveguide region, a thickness of at least 500 nanometers, and the composition of the waveguide and the clad regions are such so as to provide confinement of the optical mode in the waveguide region to the extent that the optical mode generating does not overlap into the clad regions from the waveguide region more than about 5%.

Abstract: A semiconductor laser diode having increased efficiency and therefore increased power output. The laser diode includes a body of a semiconductor material having therein a waveguide region which is not intentionally doped so as to have a doping level of no greater than about 5×1016/cm3. Within the waveguide region is means, such as at least one quantum well region, for generating an optical mode of photons. Clad regions of opposite conductivity type are on opposite sides of the waveguide region. The thickness of the waveguide region, a thickness of at least 500 nanometers, and the composition of the waveguide and the clad regions are such so as to provide confinement of the optical mode in the waveguide region to the extent that the optical mode generating does not overlap into the clad regions from the waveguide region more than about 5%.