Patents by Inventor Joseph J. Merola

Joseph J. Merola has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • System and method for increasing group III-nitride semiconductor growth rate and reducing damaging ion flux
    Patent number: 11319644
    Abstract: Systems and methods for the rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 ?m/hour can be achieved.
    Type: Grant
    Filed: January 6, 2020
    Date of Patent: May 3, 2022
    Assignee: Georgia Tech Research Corporation
    Inventors: William Alan Doolittle, Evan A. Clinton, Chloe A. M. Fabien, Brendan Patrick Gunning, Joseph J. Merola
  • SYSTEM AND METHOD FOR INCREASING GROUP III-NITRIDE SEMICONDUCTOR GROWTH RATE AND REDUCING DAMAGING ION FLUX
    Publication number: 20200141026
    Abstract: Systems and methods for the rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 ?m/hour can be achieved.
    Type: Application
    Filed: January 6, 2020
    Publication date: May 7, 2020
    Inventors: William Alan Doolittle, Evan A. Clinton, Chloe A.M. Fabien, Brendan Patrick Gunning, Joseph J. Merola
  • System and method for increasing III-nitride semiconductor growth rate and reducing damaging ion flux
    Patent number: 10526723
    Abstract: Systems and methods are disclosed for rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 ?m/hour can be achieved.
    Type: Grant
    Filed: June 16, 2016
    Date of Patent: January 7, 2020
    Assignee: Georgia Tech Research Corporation
    Inventors: William Alan Doolittle, Evan A. Clinton, Chloe A. M. Fabien, Brendan Patrick Gunning, Joseph J. Merola
  • System and Method for Increasing III-Nitride Semiconductor Growth Rate and Reducing Damaging Ion Flux
    Publication number: 20180135202
    Abstract: Systems and methods are disclosed for rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 ?m/hour can be achieved.
    Type: Application
    Filed: June 16, 2016
    Publication date: May 17, 2018
    Inventors: William Alan Doolittle, Evan A. Clinton, Chloe A.M. Fabien, Brendan Patrick Gunning, Joseph J. Merola