Patents by Inventor Joseph Michael Morabito

Joseph Michael Morabito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4109297
    Abstract: A metallization scheme for interconnection of elements in thin film and hybrid circuits is described. A thin layer of titanium is first formed, preferably by evaporation or sputtering, on the surface of the insulating substrate. A thin layer of copper is then formed in the same manner over the titanium layer. This is followed by electroplating of copper to a desired thickness onto selected portions of the Ti-Cu multilayer. Successive layers of nickel and gold are then selectively electroplated onto the plated copper regions. An additional layer of palladium may also be included between the titanium and copper layers for improved adhesion. The Ti-Cu-Ni-Au metallization system has been found unusually compatible with the major processing requirements of thin film circuits, for example, thermocompression bonding, soldering, via-hole coverage and resistor stabilization.
    Type: Grant
    Filed: March 25, 1977
    Date of Patent: August 22, 1978
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Nathan George Lesh, deceased, BY Merchants National Bank of Allentown, executor, Joseph Michael Morabito, John Henry Thomas, III
  • Patent number: 4054484
    Abstract: Disclosed is a crossover fabrication technique which is compatible with interconnect metallization for thin film and hybrid circuits which comprises a layer of copper. In one embodiment, evaporated layers of Ti and Cu are used as the base layers to build up the crossover spacing layer. A nickel protective layer is formed over the evaporated layers and the interconnect metallization. A copper spacing layer is then formed over the nickel layer by plating. Pillar holes are etched over selected areas of the interconnect metal preferably using an etchant which removes both the copper spacing layer and nickel protective layer, followed by forming the gold crossovers. The remaining copper spacing layer is removed by an etchant which preferentially attacks copper, and the nickel protective layer and copper base layers are preferably removed by a single etchant.
    Type: Grant
    Filed: October 23, 1975
    Date of Patent: October 18, 1977
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Nathan George Lesh, deceased, by William B. Ketterer, executor, Joseph Michael Morabito, John Henry Thomas, III
  • Patent number: 4016050
    Abstract: A metallization scheme for interconnection of elements in thin film and hybrid circuits is described. A thin layer of titanium is first formed, preferably by evaporation or sputtering, on the surface of the insulating substrate. A thin layer of copper is then formed in the same manner over the titanium layer. This is followed by electroplating of copper to a desired thickness onto selected portions of the Ti-Cu multilayer. Successive layers of nickel and gold are then selectively electroplated onto the plated copper regions. An additional layer of palladium may also be included between the titanium and copper layers for improved adhesion. The Ti-Cu-Ni-Au metallization system has been found unusually compatible with the major processing requirements of thin film circuits, for example, thermocompression bonding, soldering, via-hole coverage and resistor stabilization.
    Type: Grant
    Filed: May 12, 1975
    Date of Patent: April 5, 1977
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Nathan George Lesh, deceased, BY Merchants National Bank of Allentown, executor, Joseph Michael Morabito, John Henry Thomas, III