Patents by Inventor Joseph S. Raby

Joseph S. Raby has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4854986
    Abstract: A method of manufacturing semiconductors formed of bonded wafers. The method includes the use of a heat sink. The heat sink induces a temperature gradient to occur on a single area at the interface of the wafers with the gradient moving rapidly across the remaining surface. As a result of the temperature front, the voids or uncontacted areas between the wafers which result in a typical bonding process are substantially reduced, thereby providing a stronger and more effective bond.
    Type: Grant
    Filed: May 13, 1987
    Date of Patent: August 8, 1989
    Assignee: Harris Corporation
    Inventor: Joseph S. Raby
  • Patent number: 4771016
    Abstract: A method of forming a high quality silicon on insulator semiconductor device using wafer bonding. The annealing time for the wafer bonding process is substantially reduced through the use of a rapid thermal annealer, thereby resulting in minimizing the redistribution of the doping concentration resulting from the annealing process.
    Type: Grant
    Filed: April 24, 1987
    Date of Patent: September 13, 1988
    Assignee: Harris Corporation
    Inventors: George Bajor, Joseph S. Raby
  • Patent number: 4650696
    Abstract: A process is provided for making semiconductor devices with refractory metal metallization layers in place of aluminum metallization layers. An insulative layer is deposited onto a silicon substrate and a pattern is formed in the insulative layer. Prior to deposition of the metallization layer onto the patterned insulative layer, a layer of polycrystalline silicon is deposited onto the patterned insulative layer by means of a low pressure chemical vapor deposition process. The polycrystalline silicon is deposited to a thickness of preferably 700-800 Angstroms. After deposition of the polycrystalline silicon layer, refractory metal is deposited by means of a low pressure chemical vapor deposition process. Preferably, the refractory metal is deposited to a thickness of one micrometer at a temperature of 300.degree.-600.degree. C. depending on the desired deposition rate.
    Type: Grant
    Filed: October 1, 1985
    Date of Patent: March 17, 1987
    Assignee: Harris Corporation
    Inventor: Joseph S. Raby
  • Patent number: 4595608
    Abstract: A metal is selectively chemically vapor deposited on a substrate through openings in a moisture adsorbing mask layer by maintaining moisture in the mask layer. Thick metal layers are formed by precharging the mask with moisture. Also a cleaned tube is prepared for selective deposition by operating the process with a bare substrate until the tube is coated. The selective deposition is then performed.
    Type: Grant
    Filed: November 9, 1984
    Date of Patent: June 17, 1986
    Assignee: Harris Corporation
    Inventors: Edward M. King, Kurt E. Gsteiger, Joseph S. Raby
  • Patent number: 4389713
    Abstract: A first voltage pulse is applied having sufficient amplitude to switch the device from a high to a low resistance state and subsequently maintaining a holding current. A second voltage pulse is applied after the device has switched to drive the filamentous path into the liquid phase for a short duration.
    Type: Grant
    Filed: June 10, 1981
    Date of Patent: June 21, 1983
    Assignee: Harris Corporation
    Inventors: Vipin N. Patel, Joseph S. Raby