Abstract: Embodiments of flexible laser manufacturing systems are disclosed herein. A flexible laser manufacturing system configured in accordance with one embodiment includes a plurality of laser processing stations. Each laser processing station can include a laser source configured to generate a laser beam for processing target material, and a first controller coupled to the laser source. The flexible laser manufacturing system also includes a second controller coupled to the first controller of the individual laser processing stations. The second controller is configured to monitor and instruct each of the first controllers for processing target material of each of the corresponding laser processing stations.

Abstract: Embodiments of multi-stage air filtration systems are disclosed herein. A filtration system configured in accordance with one embodiment includes at least a first filter and a second filter arranged in series in an exhaust stream. The first filter is arranged to hold a first active media in the exhaust stream, the second filter is arranged to hold a second active media in the exhaust stream, and the active media is selected to remove one or more contaminants known to be in the exhaust stream. The system also includes at least one sensor arranged to detect the presence of the one or more contaminants downstream of the first filter and/or the second filter.

Abstract: Embodiments of multi-stage air filtration systems are disclosed herein. A filtration system configured in accordance with one embodiment includes at least a first filter and a second filter arranged in series in an exhaust stream. The first filter is arranged to hold a first active media in the exhaust stream, the second filter is arranged to hold a second active media in the exhaust stream, and the active media is selected to remove one or more contaminants known to be in the exhaust stream. The system also includes at least one sensor arranged to detect the presence of the one or more contaminants downstream of the first filter and/or the second filter.

Abstract: Embodiments of recirculating filtration and exhaust systems for material processing systems are disclosed herein. A material processing system configured in accordance with one embodiment includes an enclosure for processing a workpiece, the enclosure having an enclosure inlet and an enclosure outlet. The system also includes a first flow path fluidly coupled to the enclosure inlet and the enclosure outlet, and a first filtration assembly in the first flow path. The first filtration assembly draws airflow from the enclosure and returns the airflow to the enclosure. The system further includes a second flow path in fluid communication with the first flow path upstream from the enclosure inlet, and a second filtration assembly in the second flow path. The second filtration assembly draws airflow from the first flow path and returns airflow to the first flow path.

Abstract: Embodiments of flexible laser manufacturing systems are disclosed herein. A flexible laser manufacturing system configured in accordance with one embodiment includes a plurality of laser processing stations. Each laser processing station can include a laser source configured to generate a laser beam for processing target material, and a first controller coupled to the laser source. The flexible laser manufacturing system also includes a second controller coupled to the first controller of the individual laser processing stations. The second controller is configured to monitor and instruct each of the first controllers for processing target material of each of the corresponding laser processing stations.

Abstract: Embodiments of recirculating filtration and exhaust systems for material processing systems are disclosed herein. A material processing system configured in accordance with one embodiment includes an enclosure for processing a workpiece, the enclosure having an enclosure inlet and an enclosure outlet. The system also includes a first flow path fluidly coupled to the enclosure inlet and the enclosure outlet, and a first filtration assembly in the first flow path. The first filtration assembly draws airflow from the enclosure and returns the airflow to the enclosure. The system further includes a second flow path in fluid communication with the first flow path upstream from the enclosure inlet, and a second filtration assembly in the second flow path. The second filtration assembly draws airflow from the first flow path and returns airflow to the first flow path.

Abstract: A method of and apparatus for regulating carbon dioxide using a pre-injection assembly coupled to a processing chamber operating at a supercritical state is disclosed. The method and apparatus utilize a source for providing supercritical carbon dioxide to the pre-injection assembly and a temperature control element for maintaining the pre-injection region at a supercritical temperature and pressure.

Abstract: Method and apparatus for controlling the migration of reaction by-product gases from a chemical vapor deposition (CVD) process chamber to a transfer vacuum chamber shared by other process chambers. Separate regulated flows of purge gas are provided to the CVD process chamber and the transfer vacuum chamber before establishing a pathway for substrate transfer. A pressure differential is created between the transfer vacuum chamber and the CVD process chamber that reduces or prevents the migration of CVD reaction by-product gases arising from the establishment of the substrate transfer pathway. While the pathway is established, a directional flow of purge gas is maintained from the transfer vacuum chamber into the CVD process chamber.

Abstract: A method for treating a fluoro-carbon dielectric film for integration of the dielectric film into a semiconductor device. The method includes providing a substrate having a fluoro-carbon film deposited thereon, the film having an exposed surface containing contaminants, and treating the exposed surface with a supercritical carbon dioxide fluid to clean the exposed surface of the contaminants and provide surface termination. The supercritical carbon dioxide treatment improves adhesion and electrical properties of film structures containing a metal-containing film formed on the surface of the fluoro-carbon dielectric film.

Abstract: A method and system for processing a substrate in a film removal system. The method includes providing the substrate in a substrate chamber of a film removal system, where the substrate has a micro-feature containing a dielectric film on a sidewall of the micro-feature and a photoresist film covering a portion the dielectric film, and performing a first film removal process using supercritical CO2 processing to remove the portion of the dielectric film not covered by the photoresist film. Following the first film removal process, a second film removal process using supercritical CO2 processing can be performed to remove the photoresist film. Alternately, wet processing can be used to perform one of the first film removal process or the second film removal process.

Abstract: A method to redistribute solid copper deposited by PVD on a wafer topography. The deposited copper is solubilized in a fluid for redistribution. The copper redistribution prevents inherent nonuniformity of the deposited copper film thickness by improving the uniformity of thickness of the copper film on the covered surfaces, such as vertical and bottom surfaces. The method provides the advantages of good adhesion and good grain growth and orientation that are achieved with copper deposited by PVD, and also provides the good step coverage as achieved with copper deposited by CVD.

Abstract: Method and apparatus for controlling the migration of reaction by-product gases from a chemical vapor deposition (CVD) process chamber to a transfer vacuum chamber shared by other process chambers. Separate regulated flows of purge gas are provided to the CVD process chamber and the transfer vacuum chamber before establishing a pathway for substrate transfer. A pressure differential is created between the transfer vacuum chamber and the CVD process chamber that reduces or prevents the migration of CVD reaction by-product gases arising from the establishment of the substrate transfer pathway. While the pathway is established, a directional flow of purge gas is maintained from the transfer vacuum chamber into the CVD process chamber.

Abstract: Method for depositing a tantalum silicide barrier film on a semiconductor device including a silicon-based substrate with recessed features by low temperature thermal CVD. The tantalum silicide barrier film exhibits high conformality and low fluorine or chlorine impurity content. A specific embodiment of the method for depositing the tantalum silicide barrier layer includes depositing tantalum silicide by TCVD from the reaction of a TaF5 or TaCl5 precursor vapor with silane gas on a 250° C.-450° C. heated substrate.

Abstract: A methodology is described by which a processing chamber used to deposit plasma-enhanced Ti-CVD films may be conditioned and passivated efficiently after either a wet cleaning or in-situ chemical cleaning, or after each successive deposition sequence. The technique allows a CVD process, such as, for example, a Ti-PECVD process, to recover film properties, such as resistivity, uniformity, and deposition rate, in a minimum time and following a minimum number of conditioning wafers, thereby improving the productivity of the system. The technique also maintains the stability of the system during continuous operation. This allows for the processing of thousands of wafers between in-situ cleaning of the chamber.

Abstract: A method for chemical vapor deposition comprises providing a thin layer of silicon on the surface of a dielectric-covered substrate prior to depositing a tantalum-based barrier layer from a mixture of a vapor-phase reactant comprising a tantalum halide and a reducing gas. The thin layer of silicon serves to significantly reduce the accumulation of halogen atoms at the interface between the tantalum-based layer and dielectric. The thin layer of silicon may be substantially removed from the surface of the dielectric during the chemical vapor deposition. The method advantageously promotes the adhesion of the tantalum-based layer to the dielectric by reducing the halogen content at the tantalum/dielectric interface.

Abstract: Method for depositing a nitrified tantalum silicide barrier film on a semiconductor device including a silicon-based substrate with recessed features by low temperature thermal CVD of tantalum silicide and subsequent nitrification. The nitrified tantalum silicide barrier film exhibits high conformality and low fluorine or chlorine impurity content. A specific embodiment of the method includes depositing tantalum silicide by TCVD from the reaction of a TaF5 or TaCl5 precursor vapor with silane gas on a 250° C.-450° C. heated substrate, then exposing the tantalum silicide to a thermal NH3 treatment or an NH3— or N2-containing plasma treatment.

Abstract: A semiconductor device including a silicon-based substrate with recessed features and a tantalum barrier film having at least about 5% silicon incorporated substantially uniformly throughout the film. The device may further include a tantalum barrier film having improved conformality and decreased halogen impurity content. A method for incorporating the silicon into the tantalum barrier layer includes depositing tantalum by PECVD and interrupting deposition at least once to treat the deposited tantalum with a silane containing plasma.

Abstract: A CVD reactor is provided with a precursor delivery system that is integrally connected to the reactor chamber. Liquid precursor such as a copper or other metal-organic precursor is atomized at the entry of a high flow-conductance vaporizer, preferably with the assistance of an inert sweep gas. Liquid precursor is maintained, when in an unstable liquid state, at or below room temperature. In the vaporizer, heat is introduced to uniformly heat the atomized precursor. The vaporized precursor is passed into a diffuser which diffuses the vapor, either directly or through a showerhead, into the reaction chamber.

Abstract: A method of forming diffusion barrier stacks on a dielectric for a dual damascene metal chip-level interconnect, and a diffusion barrier stack produced thereby. Alternating layers of a metal and an electrically resistive diffusion barrier are deposited on a dielectric substrate, with different layers having different thicknesses appropriate to their functions in the device. In an example of the present invention, alternating layers of tantalum and tantalum nitride are deposited on a dielectric substrate.

Abstract: A method for forming modulated tantalum/tantalum nitride diffusion barrier stacks on semiconductor device substrates used in interconnect structures. Alternating layers of tantalum and tantalum nitride are deposited onto the semiconductor device substrate by chemical vapor deposition from a tantalum pentafluoride precursor vapor, with intermittent ammonia plasma treatment of the tantalum and tantalum nitride such that each tantalum layer and each tantalum nitride layer are treated at least once to thereby reduce the evolution of HF gas, thereby improving the adhesion and durability of the film stacks during subsequent elevated temperature processing.