Abstract: The disclosure is directed solutions and processes to remove substances from substrates. In some cases, the substances can include photoresist on semiconductor wafers. The solution can include hydrogen peroxide in an amount that is no greater than 15% by weight of the total weight of the solution. The solution can also include a quaternary ammonium hydroxide and water. Further, the solution can include an amine, a co-solvent, or both. One or more sides of the substrate can be contacted with the solution to remove one or more substances from the solution.

Abstract: Stripping compositions are described that are useful for removing organic substances from substrates, for example, electronic device substrates such as microelectronic wafers or flat panel displays. The stripping compositions may be suitable for removing photoresists, including acrylic-based negative dry film photoresist, from electronic devices. In one embodiment, the stripping compositions can include a polar protic solvent, an amine or alkanoamine, and a quaternary ammonium hydroxide. In one embodiment the stripping compositions can include a polar protic solvent and at least two alkanoamines. The stripping compositions may be free of polar aprotic solvents.

Abstract: The disclosure is directed solutions and processes to remove substances from substrates. In some cases, the substances can include photoresist on semiconductor wafers. The solution can include hydrogen peroxide in an amount that is no greater than 15% by weight of the total weight of the solution. The solution can also include a quaternary ammonium hydroxide and water. Further, the solution can include an amine, a co-solvent, or both. One or more sides of the substrate can be contacted with the solution to remove one or more substances from the solution.