Patents by Inventor Jr-Hau He

Jr-Hau He has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10340448
    Abstract: All-printed paper-based substrate memory devices are described. In an embodiment, a paper-based memory device is prepared by coating one or more areas of a paper substrate with a conductor material such as a carbon paste, to form a first electrode of a memory, depositing a layer of insulator material, such as titanium dioxide, over one or more areas of the conductor material, and depositing a layer of metal over one or more areas of the insulator material to form a second electrode of the memory. In an embodiment, the device can further include diodes printed between the insulator material and the second electrode, and the first electrode and the second electrodes can be formed as a crossbar structure to provide a WORM memory. The various layers and the diodes can be printed onto the paper substrate by, for example, an ink jet printer.
    Type: Grant
    Filed: December 10, 2015
    Date of Patent: July 2, 2019
    Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Jr-Hau He, Chun-Ho Lin, Der-Hsien Lien
  • Publication number: 20190172960
    Abstract: Embodiments of the present disclosure describe a solar cell comprising a first monolayer and a second monolayer, the first monolayer and the second monolayer forming a monolayer p-n lateral heterojunction with an atomically sharp interface; and a substrate, the substrate and the monolayer p-n lateral heterojunction forming a solar cell. Embodiments of the present disclosure further describe a method of making a solar cell comprising growing a first monolayer on a first substrate; growing a second monolayer on the first substrate sufficient to form a monolayer p-n lateral heterojunction with an atomically sharp interface; and transferring the monolayer p-n lateral heterojunction from the first substrate to a second substrate sufficient to form a solar cell.
    Type: Application
    Filed: August 1, 2017
    Publication date: June 6, 2019
    Inventors: Jr-Hau HE, Meng-Lin TSAI
  • Publication number: 20190044004
    Abstract: An optical device includes an active region and packaging glass located on top of the active region. A top surface of the packaging glass includes hierarchical nanostructures comprised of honeycombed nanowalls (HNWs) and nanorod (NR) structures extending from the HNWs.
    Type: Application
    Filed: January 26, 2017
    Publication date: February 7, 2019
    Inventors: Jr-Hau HE, Hui-Chun FU
  • Publication number: 20180198009
    Abstract: Deformable optoelectronic devices are provided, including photodetectors, photodiodes, and photovoltaic cells. The devices can be made on a variety of paper substrates, and can include a plurality of fold segments in the paper substrate creating a deformable pattern. Thin electrode layers and semiconductor nanowire layers can be attached to the substrate, creating the optoelectronic device. The devices can be highly deformable, e.g. capable of undergoing strains of 500% or more, bending angles of 25° or more, and/or twist angles of 270° or more. Methods of making the deformable optoelectronic devices and methods of using, e.g. as a photodetector, are also provided.
    Type: Application
    Filed: July 12, 2016
    Publication date: July 12, 2018
    Applicant: King Abdullah University of Science and Technology
    Inventors: Jr-Hau HE, Chun-Ho LIN
  • Publication number: 20180069185
    Abstract: Embodiments of the present disclosure describe a photodetector and/or photovoltaic device comprising a semiconducting substrate and a solution including at least GQD and PEDOT:PSS, the solution deposited as a layer on the semiconducting substrate. Embodiments of the present disclosure further describe a method of fabricating a photodetector and/or photovoltaic device comprising contacting an amount of GQD with PEDOT:PSS sufficient to form a solution; and depositing the solution as a layer on a semiconducting substrate.
    Type: Application
    Filed: August 2, 2017
    Publication date: March 8, 2018
    Inventors: Jr-Hau HE, Meng-Lin TSAI
  • Patent number: 9853088
    Abstract: All-printed paper-based substrate memory devices are described. In an embodiment, a paper-based memory device is prepared by coating one or more areas of a paper substrate with a conductor material such as a carbon paste, to form a first electrode of a memory, depositing a layer of insulator material, such as titanium dioxide, over one or more areas of the conductor material, and depositing a layer of metal over one or more areas of the insulator material to form a second electrode of the memory. In an embodiment, the device can further include diodes printed between the insulator material and the second electrode, and the first electrode and the second electrodes can be formed as a crossbar structure to provide a WORM memory. The various layers and the diodes can be printed onto the paper substrate by, for example, an ink jet printer.
    Type: Grant
    Filed: December 31, 2015
    Date of Patent: December 26, 2017
    Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Jr-Hau He, Chun-Ho Lin, Der-Hsien Lien
  • Publication number: 20170365779
    Abstract: All-printed paper-based substrate memory devices are described. In an embodiment, a paper-based memory device is prepared by coating one or more areas of a paper substrate with a conductor material such as a carbon paste, to form a first electrode of a memory, depositing a layer of insulator material, such as titanium dioxide, over one or more areas of the conductor material, and depositing a layer of metal over one or more areas of the insulator material to form a second electrode of the memory. In an embodiment, the device can further include diodes printed between the insulator material and the second electrode, and the first electrode and the second electrodes can be formed as a crossbar structure to provide a WORM memory. The various layers and the diodes can be printed onto the paper substrate by, for example, an ink jet printer.
    Type: Application
    Filed: December 10, 2015
    Publication date: December 21, 2017
    Inventors: JR-HAU HE, CHUN-HO LIN, DER-HSIEN LIEN
  • Publication number: 20160190445
    Abstract: All-printed paper-based substrate memory devices are described. In an embodiment, a paper-based memory device is prepared by coating one or more areas of a paper substrate with a conductor material such as a carbon paste, to form a first electrode of a memory, depositing a layer of insulator material, such as titanium dioxide, over one or more areas of the conductor material, and depositing a layer of metal over one or more areas of the insulator material to form a second electrode of the memory. In an embodiment, the device can further include diodes printed between the insulator material and the second electrode, and the first electrode and the second electrodes can be formed as a crossbar structure to provide a WORM memory. The various layers and the diodes can be printed onto the paper substrate by, for example, an ink jet printer.
    Type: Application
    Filed: December 31, 2015
    Publication date: June 30, 2016
    Inventors: Jr-Hau He, Chun-Ho Lin, Der-Hsien Lien
  • Patent number: 9261627
    Abstract: The disclosure provides a zinc oxide anti-reflection layer having a syringe-like structure and method for fabricating the same. The zinc oxide anti-reflection layer includes: a zinc oxide lower portion, wherein the zinc oxide lower portion has a nanorod array structure; and a zinc oxide upper portion connected to the zinc oxide lower portion, wherein the zinc oxide anti-reflection layer has a syringe-like structure.
    Type: Grant
    Filed: May 10, 2012
    Date of Patent: February 16, 2016
    Assignee: Industrial Technology Research Institute
    Inventors: Kun-Ping Huang, Jr-Hau He, Li-Ko Yeh, Kun-Yu Lai
  • Publication number: 20150214394
    Abstract: An opto-electrical conversion structure includes a substrate, a first semiconductor structure, and a second semiconductor structure. The substrate has a first surface and a second surface opposite to each other. The first surface has a plurality of micro-structures and a plurality of nano-structures. The nano-structures are distributed on the surface of the micro-structures, and have heights of about 500 nm to about 900 nm. The first semiconductor structure is disposed on the first surface of the substrate. The second semiconductor structure is disposed on the second surface of the substrate.
    Type: Application
    Filed: June 6, 2014
    Publication date: July 30, 2015
    Inventors: Ming-Yi HUANG, Po-Chuan YANG, Jr-Hau HE, Hsin-Ping WANG, Tzu-Yin LIN
  • Publication number: 20130129974
    Abstract: The disclosure provides a zinc oxide anti-reflection layer having a syringe-like structure and method for fabricating the same. The zinc oxide anti-reflection layer includes: a zinc oxide lower portion, wherein the zinc oxide lower portion has a nanorod array structure; and a zinc oxide upper portion connected to the zinc oxide lower portion, wherein the zinc oxide anti-reflection layer has a syringe-like structure.
    Type: Application
    Filed: May 10, 2012
    Publication date: May 23, 2013
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Kun-Ping Huang, Jr-Hau He, Li Ko Yeh, Kun-Yu Lai
  • Patent number: 8039834
    Abstract: A semiconducting device includes a substrate, a piezoelectric wire, a structure, a first electrode and a second electrode. The piezoelectric wire has a first end and an opposite second end and is disposed on the substrate. The structure causes the piezoelectric wire to bend in a predetermined manner between the first end and the second end so that the piezoelectric wire enters a first semiconducting state. The first electrode is coupled to the first end and the second electrode is coupled to the second end so that when the piezoelectric wire is in the first semiconducting state, an electrical characteristic will be exhibited between the first electrode and the second electrode.
    Type: Grant
    Filed: June 8, 2007
    Date of Patent: October 18, 2011
    Assignee: Georgia Tech Research Corporation
    Inventors: Zhong L. Wang, Xudong Wang, Jinhui Song, Jun Zhou, Jr-Hau He