Abstract: Embodiments of the present invention are directed to a blocker for a gas distribution system for use in semiconductor deposition apparatus. The gas distribution system includes a faceplate having a plurality of faceplate apertures to distribute a gas flow onto a surface of a substrate disposed downstream of the faceplate for film deposition on the substrate; and a blocker disposed upstream of the faceplate. The blocker includes a generally planar blocker surface facing the faceplate and a side wall disposed around a periphery of the blocker surface. The blocker surface includes a plurality of blocker holes to permit gas flow therethrough to the faceplate. The side wall is disposed near an edge of the faceplate and includes a plurality of side apertures to permit gas flow therethrough to the faceplate.

Abstract: A method of processing a substrate including depositing a low dielectric constant film comprising silicon, carbon, and oxygen on the substrate and depositing an oxide rich cap on the low dielectric constant film is provided. The low dielectric constant film is deposited from a gas mixture comprising an organosilicon compound and an oxidizing gas in the presence of RF power in a chamber. The RF power and a flow of the organosilicon compound and the oxidizing gas are continued in the chamber after the deposition of the low dielectric constant film at flow rates sufficient to deposit an oxide rich cap on the low dielectric constant film.

Abstract: Embodiments in accordance with the present invention relate to apparatuses and methods distributing processing gases over a workpiece surface. In accordance with one embodiment of the present invention, process gases are flowed to a surface of a semiconductor wafer through a substantially circular gas distribution showerhead defining a plurality of holes. A first set of holes located at the center of the faceplate, are arranged in a non-concentric manner not exhibiting radial symmetry. This asymmetric arrangement achieves maximum density of holes and gases distributed therefrom. To compensate for nonuniform exposure of the wafer edges to gases flowed from the first hole set, the faceplate periphery defines a second set of holes arranged concentrically and exhibiting radial symmetry. Processing substrates with gases flowed through the first and second sets of holes results in formation of films exhibiting enhanced uniformity across center-to-edge regions.