Patents by Inventor Jui Chen
Jui Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240287802Abstract: The subject disclosure relates to a reinforcement cage, a jig and a method for making the reinforcement cage. The reinforcement cage includes a plurality of reinforcement units, which are arranged along a first direction, and a plurality of main bars. Each reinforcement unit includes a first stirrup, which is substantially rectangular, at least one second stirrup and at least one third stirrup. The first stirrup includes a first side, a second side, a third side and a fourth side. The first side and the third side are opposite to each other, and the second side and the fourth side are opposite to each other. The at least one second stirrup is connected to the first side and the third side of the first stirrup. The at least one third stirrup is connected to the second side and the fourth side of the first stirrup and substantially perpendicular to and fixed to the at least one second stirrup.Type: ApplicationFiled: February 15, 2024Publication date: August 29, 2024Inventors: Samuel YIN, Jui-Chen WANG, Jhih-Syuan CHEN
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Publication number: 20240290575Abstract: A semiconductor structure includes a substrate, a semiconductor detector, a peripheral circuit, and a multilayer interconnection structure. The substrate has a sensing region and a peripheral region. The semiconductor detector is on the sensing region of the substrate. The semiconductor detector includes a first detector unit, a second detector unit, and a third detector unit. Each of the first, second, third detector units includes a first transistor and a second transistor connected in series. A gate of the second transistor is a floating gate. The peripheral circuit is on the peripheral region of the substrate and is coupled to the semiconductor detector. The multilayer interconnection structure is over the substrate. A first number of metallization layers of the multilayer interconnection structure directly above the peripheral circuit is greater than a second number of metallization layers of the multilayer interconnection structure directly above the semiconductor detector.Type: ApplicationFiled: May 6, 2024Publication date: August 29, 2024Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITYInventors: Ya-Chin KING, Chrong-Jung LIN, Burn-Jeng LIN, Chien-Ping WANG, Shao-Hua WANG, Chun-Lin CHANG, Li-Jui CHEN
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Publication number: 20240284703Abstract: Exemplary subpixel structures include a directional light-emitting diode structure characterized by a full-width-half-maximum (FWHM) of emitted light having a divergence angle of less than or about 10°. The subpixel structure further includes a lens positioned a first distance from the light-emitting diode structure, where the lens is shaped to focus the emitted light from the light-emitting diode structure. The subpixel structure still further includes a patterned light absorption barrier positioned a second distance from the lens. The patterned light absorption barrier defines an opening in the barrier, and the focal point of the light focused by the lens is positioned within the opening. The subpixels structures may be incorporated into a pixel structure, and pixel structures may be incorporated into a display that is free of a polarizer layer.Type: ApplicationFiled: April 22, 2024Publication date: August 22, 2024Applicant: Applied Materials, Inc.Inventors: Chung-Chih Wu, Po-Jui Chen, Hoang Yan Lin, Guo-Dong Su, Wei-Kai Lee, Chi-Jui Chang, Wan-Yu Lin, Byung Sung Kwak, Robert Jan Visser
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Patent number: 12066761Abstract: In a method of inspecting an extreme ultraviolet (EUV) radiation source, during an idle mode, a borescope mounted on a fixture is inserted through a first opening into a chamber of the EUV radiation source. The borescope includes a connection cable attached at a first end to a camera. The fixture includes an extendible section mounted from a first side on a lead screw, and the camera of the borescope is mounted on a second side, opposite to the first side, of the extendible section. The extendible section is extended to move the camera inside the chamber of the EUV radiation source. One or more images are acquired by the camera from inside the chamber of the EUV radiation source at one or more viewing positions. The one or more acquired images are analyzed to determine an amount of tin debris deposited inside the chamber of the EUV radiation source.Type: GrantFiled: August 30, 2021Date of Patent: August 20, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chiao-Hua Cheng, Sheng-Kang Yu, Shang-Chieh Chien, Wei-Chun Yen, Heng-Hsin Liu, Ming-Hsun Tsai, Yu-Fa Lo, Li-Jui Chen, Wei-Shin Cheng, Cheng-Hsuan Wu, Cheng-Hao Lai, Yu-Kuang Sun, Yu-Huan Chen
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Publication number: 20240273675Abstract: An image calibration method is applied to an image calibration device includes an image receiver and an operation processor. The image calibration method of providing a motion deblur function includes driving a first camera to capture a first image having a first exposure time, driving a second camera disposed adjacent to the first camera to capture a second image having a second exposure time different from and at least partly overlapped with the first exposure time, and fusing a first feature of the first image and a second feature of the second image to generate a fusion image.Type: ApplicationFiled: January 2, 2024Publication date: August 15, 2024Applicant: MEDIATEK INC.Inventors: Yu-Hua Huang, Pin-Wei Chen, Keh-Tsong Li, Shao-Yang Wang, Chia-Hui Kuo, Hung-Chih Ko, Yun-I Chou, Yen-Yang Chou, Chien-Ho Yu, Chi-Cheng Ju, Ying-Jui Chen
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Patent number: 12063734Abstract: The present disclosure is directed to a modularized vessel droplet generator assembly (MGDVA) including a droplet generator assembly (DGA). Under a normal operation, the liquid fuel moves along an operation pathway extending through the DGA to eject or discharge the liquid fuel (e.g., liquid tin) from a nozzle of the DGA into a vacuum chamber. The liquid fuel in the vacuum chamber is then exposed to a laser generating an extreme ultra-violet (EUV) light. Under a service operation, the operation pathway is closed and a service pathway extending through the DGA is opened. A gas is introduced into the service pathway forming a gas-liquid interface between the gas and the liquid fuel. The gas-liquid interface is driven to an isolation valve directly adjacent to the DGA. In other words, the gas pushes back the liquid fuel to the isolation valve. Once the gas-liquid interface reaches the isolation valve, the isolation valve is closed isolating the DGA from the liquid fuel.Type: GrantFiled: September 23, 2021Date of Patent: August 13, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu-Kuang Sun, Ming-Hsun Tsai, Wei-Shin Cheng, Cheng-Hao Lai, Hsin-Feng Chen, Chiao-Hua Cheng, Cheng-Hsuan Wu, Yu-Fa Lo, Jou-Hsuan Lu, Shang-Chieh Chien, Li-Jui Chen, Heng-Hsin Liu
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Patent number: 12061423Abstract: Microwave heating of debris collecting vanes within the source vessel of a lithography apparatus is used to accomplish uniform temperature distribution in order to reduce fall-on contamination and formation of clogs on the inner and outer surfaces of the vanes.Type: GrantFiled: September 28, 2021Date of Patent: August 13, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Cheng Hung Tsai, Sheng-Kang Yu, Shang-Chieh Chien, Heng-Hsin Liu, Li-Jui Chen
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Patent number: 12055865Abstract: An extreme ultraviolet (EUV) lithography system includes a vane bucket module. The vane bucket module includes a temperature adjusting pack and a collecting tank inserted into the temperature adjusting pack. The temperature adjusting pack has a plurality of inlets. The collecting tank has a cover and the cover includes a plurality of through holes. The inlets of the temperature adjusting pack are aligned with the through holes of the cover. Thicknesses of edges of the cover is different from a thickness of a center of the cover.Type: GrantFiled: August 6, 2021Date of Patent: August 6, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ssu-Yu Chen, Po-Chung Cheng, Li-Jui Chen, Che-Chang Hsu, Chi Yang
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Patent number: 12055867Abstract: A lithography system is provided capable of deterring contaminants, such as tin debris from entering into the scanner. The lithography system in accordance with various embodiments of the present disclosure includes a processor, an extreme ultraviolet light source, a scanner, and a hollow connection member. The light source includes a droplet generator for generating a droplet, a collector for reflecting extreme ultraviolet light into an intermediate focus point, and a light generator for generating pre-pulse light and main pulse light. The droplet generates the extreme ultraviolet light in response to the droplet being illuminated with the pre-pulse light and the main pulse light. The scanner includes a wafer stage. The hollow connection member includes an inlet that is in fluid communication with an exhaust pump. The hollow connection member provides a hollow space in which the intermediate focus point is disposed.Type: GrantFiled: May 3, 2023Date of Patent: August 6, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chieh Hsieh, Tai-Yu Chen, Cho-Ying Lin, Heng-Hsin Liu, Li-Jui Chen, Shang-Chieh Chien
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Patent number: 12055864Abstract: A photolithographic apparatus includes a droplet generator, a droplet generator maintenance system, and a controller communicating with the droplet generator maintenance system. The droplet generator maintenance system operatively communicates with the droplet generator, a coolant distribution unit, a gas supply unit, and a supporting member. The gas supply unit includes a heat exchange assembly and an air heating assembly. The coolant distribution unit is configured to control the temperature of the droplet generator within the acceptable droplet generator range.Type: GrantFiled: March 14, 2022Date of Patent: August 6, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yu-Huan Chen, Cheng-Hsuan Wu, Ming-Hsun Tsai, Shang-Chieh Chien, Li-Jui Chen
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Patent number: 12050399Abstract: A method for preparing a pellicle assembly includes reducing the thickness of one or more initial membrane(s) to obtain a pellicle membrane. The pellicle membrane is then affixed to a mounting frame to obtain the pellicle assembly. Compressive pressure can be applied to reduce the thickness of the initial membrane(s). Alternatively, the thickness can be reduced by stretching the initial membrane(s) to obtain an extended membrane. A mounting frame is then affixed to a portion of the extended membrane. The mounting frame and the portion of the extended membrane are then separated from the remainder of the extended membrane to obtain the pellicle assembly. The resulting pellicle assemblies include a pellicle membrane that is attached to a mounting frame. The pellicle membrane can be formed from nanotubes and has a combination of high transmittance, low deflection, and small pore size.Type: GrantFiled: May 12, 2021Date of Patent: July 30, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hsin-Chang Lee, Pei-Cheng Hsu, Ta-Cheng Lien, Li-Jui Chen, Tsai-Sheng Gau, Chin-Hsiang Lin
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Patent number: 12044975Abstract: A method of controlling a droplet illumination module/droplet detection module system of an extreme ultraviolet (EUV) radiation source includes irradiating a target droplet with light from a droplet illumination module and detecting light reflected and/or scattered by the target droplet. The method includes determining whether an intensity of the detected light is within an acceptable range. In response to determining that the intensity of the detected light is not within the acceptable range, a parameter of the droplet illumination module is automatically adjusted to set the intensity of the detected light within the acceptable range.Type: GrantFiled: October 10, 2022Date of Patent: July 23, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jen-Yang Chung, Chieh Hsieh, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng
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Publication number: 20240228800Abstract: A coating material includes a modified particle and a reactive compound. The modified particle includes a core, and a silane coupling agent having an epoxy group (or a double-bond) grafted onto a surface of the core. When the silane coupling agent having the epoxy group is grafted onto the surface of the core, the reactive compound includes a non-silicon multi-epoxy compound and a silicon-containing multi-epoxy compound. When the silane coupling agent having the double-bond is grafted onto the surface of the core, the reactive compound includes a multi double-bond compound.Type: ApplicationFiled: October 30, 2023Publication date: July 11, 2024Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Hsiang-Jui CHEN, Chih-Hao LIN, Yueh-Chuan HUANG
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Patent number: 12032303Abstract: An EUV lithographic apparatus includes a wafer stage and a particle removing assembly for cleaning a wafer for an extreme ultraviolet (EUV) lithographic apparatus. The wafer stage includes a measurement side and an exposure side. The particle removing assembly includes particle removing electrodes, an exhaust device and turbomolecular pumps. The particle removing electrodes is configured to direct debris from the chamber by suppressing turbulence such that the debris can be exhausted from the wafer stage to the outside of the processing apparatus. In some embodiments, turbomolecular pumps are turned off in the measurement side of the wafer stage so that an exhaust flow can be guided to an exposure side of the wafer stage. In some embodiments, the speed of voltage rise to the electrodes of the wafer chuck is adjusted.Type: GrantFiled: October 18, 2021Date of Patent: July 9, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Tao-Hsin Chen, Li-Jui Chen, Chia-Yu Lee
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Patent number: 12028959Abstract: A metal reuse system for an extreme ultra violet (EUV) radiation source apparatus includes a first metal collector for collecting metal from vanes of the EUV radiation source apparatus, a first metal storage coupled to the first metal collector via a first conduit, a metal droplet generator coupled to the first metal storage via a second conduit, and a first metal filtration device disposed on either one of the first conduit and the second conduit.Type: GrantFiled: July 27, 2022Date of Patent: July 2, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Wei-Shin Cheng, Han-Lung Chang, Li-Jui Chen, Po-Chung Cheng, Hsiao-Lun Chang
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Patent number: 12025918Abstract: A method for lithography in semiconductor fabrication is provided. The method includes placing a semiconductor wafer over a wafer stage. The method also includes supplying an initial voltage to a plurality of electrodes of the wafer stage based on a topology of the semiconductor wafer, wherein the electrodes of the wafer stage are electrically isolated from each other. The method further includes measuring an adjusted topology of the semiconductor wafer after the initial voltage is supplied. In addition, the method includes supplying different first adjusted voltages to the electrodes of the wafer stage according to the adjusted topology of the semiconductor wafer.Type: GrantFiled: January 9, 2023Date of Patent: July 2, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Cheng-Kuan Wu, Po-Chung Cheng, Li-Jui Chen, Chih-Tsung Shih
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Publication number: 20240210842Abstract: In a method of cleaning a lithography system, during idle mode, a stream of air is directed, through a first opening, into a chamber of a wafer table of an EUV lithography system. One or more particles is extracted by the directed stream of air from surfaces of one or more wafer chucks in the chamber of the wafer table. The stream of air and the extracted one or more particle are drawn, through a second opening, out of the chamber of the wafer table.Type: ApplicationFiled: March 7, 2024Publication date: June 27, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shih-Yu TU, Shao-Hua WANG, Yen-Hao LIU, Chueh-Chi KUO, Li-Jui CHEN, Heng-Hsin LIU
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Patent number: 12019378Abstract: A method includes: removing debris on a collector of a lithography equipment by changing physical structure of the debris with a cleaner, the cleaner being at a temperature less than about 13 degrees Celsius; forming a cleaned collector by exhausting the removable debris from the collector; and forming openings in a mask layer on a substrate by removing regions of the mask layer exposed to radiation from the cleaned collector.Type: GrantFiled: May 23, 2022Date of Patent: June 25, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Cho-Ying Lin, Tai-Yu Chen, Chieh Hsieh, Sheng-Kang Yu, Shang-Chieh Chien, Li-Jui Chen, Heng-Hsin Liu
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Publication number: 20240202881Abstract: An image processing method is provided. The method includes a first MCNR stage and a second MCNR stage. The first MCNR stage includes blending the current frame with either a cached image or a long-term reference image to obtain a fused image. The cached image is loaded from the buffer unit, and the long-term reference image is derived from the static region of each input frame in a sequence of input frames. The second MCNR stage includes blending the fused image with the other of the cached image or the long-term reference image to obtain an output image.Type: ApplicationFiled: December 15, 2023Publication date: June 20, 2024Inventors: Yuan-Chen CHENG, Hao-Tien CHIANG, Tai-Hsiang HUANG, Ying-Jui CHEN, Chi-Cheng JU
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Patent number: 12009177Abstract: A method includes applying a first voltage to a source of a first transistor of a detector unit of a semiconductor detector in a test wafer and applying a second voltage to a gate of the first transistor and a drain of a second transistor of the detector unit. The first transistor is coupled to the second transistor in series, and the first voltage is higher than the second voltage. A pre-exposure reading operation is performed to the detector unit. Light of an exposure apparatus is illuminated to a gate of the second transistor after applying the first and second voltages. A post-exposure reading operation is performed to the detector unit. Data of the pre-exposure reading operation is compared with the post-exposure reading operation. An intensity of the light is adjusted based on the compared data of the pre-exposure reading operation and the post-exposure reading operation.Type: GrantFiled: February 9, 2021Date of Patent: June 11, 2024Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITYInventors: Ya-Chin King, Chrong-Jung Lin, Burn-Jeng Lin, Chien-Ping Wang, Shao-Hua Wang, Chun-Lin Chang, Li-Jui Chen