Patents by Inventor Julius Hyman, Jr.

Julius Hyman, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5152866
    Abstract: A molecular beam epitaxy (MBE) growth method and apparatus is disclosed which achieves a significantly improved sticking coefficient for materials like Hg upon a substrate, and thus a higher efficiency. A highly ionized, low pressure plasma is formed consisting of a mixture of ions of one substance of a compound to be epitaxially grown, neutral particles of the substance and electrons, and also preferably both ionization and excitation radiation. The plasma is directed onto a substrate together with a flux of the other substance in the compound; the flux can be in the form of either a vapor, or a second plasma. Radiation assisted epitaxial growth for Hg compounds in which ionization and excitation radiation are formed from Hg vapor and used to assist epitaxial growth with neutral Hg particles is also described. The plasma is formed in a special discharge chamber having a hollow cathode with an emissive-mix-free cathode insert.
    Type: Grant
    Filed: May 31, 1990
    Date of Patent: October 6, 1992
    Assignee: Hughes Aircraft Company
    Inventors: Julius Hyman, Jr., John R. Beattie, Jesse N. Matossian, Owen K. Wu, Juan F. Lam, Lawrence Anderson
  • Patent number: 5132597
    Abstract: A diverging magnetic field is established between the cathode and control electrode of a hollow cathode plasma switch to expand the plasma at a passageway through the control electrode, thus significantly increasing the switch's current handling capability. Preferred ranges of magnetic field strength, gas pressure, spacing between the hollow cathode and control electrode, and the mesh aperture size for the control grid are described.
    Type: Grant
    Filed: March 26, 1991
    Date of Patent: July 21, 1992
    Assignee: Hughes Aircraft Company
    Inventors: Dan M. Goebel, Robert L. Poeschel, Robert W. Schumacher, Julius Hyman, Jr.
  • Patent number: 5048457
    Abstract: A molecular beam epitaxy (MBE) growth method and apparatus is disclosed which achieves a significantly improved sticking coefficient for materials like Hg upon a substrate, and thus a higher efficiency. A highly ionized, low pressure plasma is formed consisting of a mixture of ions of one substance of a compound to be epitaxially grown, neutral particles of the substance and electrons, and also preferably both ionization and excitation radiation. The plasma is directed onto a substrate together with a flux of the other substance in the compound; the flux can be in the form of either a vapor, or a second plasma. Radiation assisted epitaxial growth for Hg compounds in which ionization and excitation radiation are formed from Hg vapor and used to assist epitaxial growth with neutral Hg particles is also described. The plasma is formed in a special discharge chamber having a hollow cathode with an emissive-mix-free cathode insert.
    Type: Grant
    Filed: May 31, 1990
    Date of Patent: September 17, 1991
    Assignee: Hughes Aircraft Company
    Inventors: Julius Hyman, Jr., John R. Beattie, Jesse N. Matossian, Owen K. Wu, Juan F. Lam, Lawrence Anderson
  • Patent number: 4912367
    Abstract: A high-power microwave/mm-wave oscillator is filled with an ionizable gas at a pressure of about 1-20 mTorr, into which an electron beam is injected at a high current density of at least about 1 amp/cm.sup.2, but typically 50-100 A/cm.sup.2. A plasma is formed which inhibits space-charge blowup of the beam, thereby eliminating the prior requirement of a magnet system to control the beam. The system functions as a slow-wave tube to produce narrow-band microwaves for a gas pressure of about 1-5 mTorr, and as a plasma wave tube to produce broadband microwave/mm-wave radiation for a gas pressure of about 10-20 mTorr.
    Type: Grant
    Filed: April 14, 1988
    Date of Patent: March 27, 1990
    Assignee: Hughes Aircraft Company
    Inventors: Robert W. Schumacher, Julius Hyman, Jr., Robin Harvey, Joseph Santoru
  • Patent number: 4277939
    Abstract: Ion chamber 20 receives electrons from cathode 28 and produces ions by electron bombardment in discharge plasma chamber 20. Ions are extracted through ion optics including screen 22 and accelerator electrode 24. Higher ion densities in the center of the discharge chamber are reduced by spoiler 42 which is operated at a potential between cathode and anode potential. This reduces double ionization and central peaking to provide a more uniform ion beam through the optics. By employing laterally positioned spoiler elements beam steering can be accomplished. The ion source is useful wherever a uniform beam profile is desirable as in ion implantation. Controlling the direction of beam density is useful in ion machining and in ion thrusters for space application.
    Type: Grant
    Filed: April 9, 1979
    Date of Patent: July 14, 1981
    Assignee: Hughes Aircraft Company
    Inventor: Julius Hyman, Jr.