Abstract: Provided are an under-screen biometric identification apparatus and an electronic device. The under-screen biometric identification apparatus includes: a lens disposed under a display screen for receiving an optical signal formed by reflection of a human finger on the display screen, where the optical signal is used to detect biometric information of the finger; a lens barrel, where the lens is fixed in the lens barrel; and a support, where the support is connected to the lens barrel by means of threaded connection for supporting the lens barrel. An under-screen biometric identification apparatus and an electronic device provided in embodiments of the present application can improve the efficiency of under-screen biometric identification.

Abstract: Provided are an under-screen biometric identification apparatus and an electronic device. The under-screen biometric identification apparatus includes: a lens disposed under a display screen for receiving an optical signal formed by reflection of a human finger on the display screen, where the optical signal is used to detect biometric information of the finger; a lens barrel, where the lens is fixed in the lens barrel; and a support, where the support is connected to the lens barrel by means of threaded connection for supporting the lens barrel. An under-screen biometric identification apparatus and an electronic device provided in embodiments of the present application can improve the efficiency of under-screen biometric identification.

Abstract: A control system is provided to a reductant dosing system for actively maintaining the reductant dosing system ready for use by flushing unused reductant that has crystallized at a return valve of the reductant dosing system. The control system includes a controller that can control a manner of operation of specific system hardware that is present in the reductant dosing system to flush the unused reductant from the return valve that could otherwise cause the return valve to remain a flow-blocking condition as a result of the crystallized reductant.

Abstract: Disclosed examples include LDMOS transistors and integrated circuits with a gate, a body region implanted in the substrate to provide a channel region under a portion of the gate, a source adjacent the channel region, a drain laterally spaced from a first side of the gate, a drift region including a first highly doped drift region portion, a low doped gap drift region above the first highly doped drift region portion, and a second highly doped region portion above the gap drift region, and an isolation structure extending through the second highly doped region portion into the gap drift region portion, with a first end proximate the drain region and a second end under the gate dielectric layer, where the body region includes a tapered side laterally spaced from the second end of the isolation structure to define a trapezoidal JFET region.

Abstract: A fingerprint module and the preparation method thereof, and an electronic device and the preparation method thereof, which are beneficial to improving the performance of fingerprint identification. The fingerprint module includes a fingerprint sensor, wherein a first direction of the fingerprint module has a first angle with a first direction of the fingerprint sensor, the first direction of the fingerprint module is a direction parallel to a particular edge of the fingerprint module, and the first direction of the fingerprint sensor is a direction parallel to a particular edge of the fingerprint sensor.

Abstract: Provided are an under-screen biometric identification apparatus, a biometric identification component and a terminal device. The under-screen biometric identification apparatus includes: a display screen and a biometric identification module, where the biometric identification module is fixedly disposed under the display screen, and there is a gap between the biometric identification module and the display screen. In an embodiment of the present application, the biometric identification module and a lower surface of the display screen are designed to be separated, which can reduce difficulty of disassembling the biometric identification module, thereby improving maintainability of the terminal device. Further, complexity of manufacturing the biometric identification module under the display screen can be reduced and a production success rate can be enhanced, and thus production cost is reduced.

Abstract: Fiber reinforced composites are made by infusing a mass of reinforcing fibers with a resin composition (11). A thin sheet (6) of nano-sized monofilaments (7) is applied on at least one major surface of a fiber mass. The resin composition (11) is subsequently hardened to form the composite. This method produces a composite having a very smooth surface. Printout of the reinforcing fiber is greatly reduced without the need to mask it through the application of thick coatings or additional layers of material.

Abstract: The Rds*Cgd figure of merit (FOM) of a laterally diffused metal oxide semiconductor (LDMOS) transistor is improved by forming the drain drift region with a number of dopant implants at a number of depths, and forming a step-shaped back gate region with a number of dopant implants at a number of depths to adjoin the drain drift region.

Abstract: Provided are an under-screen biometric identification apparatus, a biometric identification component and a terminal device. The under-screen biometric identification apparatus includes: a display screen and a biometric identification module, where the biometric identification module is fixedly disposed under the display screen, and there is a gap between the biometric identification module and the display screen. In an embodiment of the present application, the biometric identification module and a lower surface of the display screen are designed to be separated, which can reduce difficulty of disassembling the biometric identification module, thereby improving maintainability of the terminal device. Further, complexity of manufacturing the biometric identification module under the display screen can be reduced and a production success rate can be enhanced, and thus production cost is reduced.

Abstract: An LDMOS transistor with a dummy gate comprises an extended drift region over a substrate, a drain region in the extended drift region, a channel region in the extended drift region, a source region in the channel region, a first dielectric layer with a first thickness formed over the extended drift region, a second dielectric layer with a second thickness formed over the extended drift region and the channel region, wherein the first thickness is greater than the second thickness, and wherein the first dielectric layer and the second dielectric layer form two steps, a first gate formed over the first dielectric layer and a second gate formed above the second dielectric layer.

Abstract: Provided are an under-screen biometric identification apparatus and an electronic device. The under-screen biometric identification apparatus includes: a lens disposed under a display screen for receiving an optical signal formed by reflection of a human finger on the display screen, where the optical signal is used to detect biometric information of the finger; a lens barrel, where the lens is fixed in the lens barrel; and a support, where the support is connected to the lens barrel by means of threaded connection for supporting the lens barrel. An under-screen biometric identification apparatus and an electronic device provided in embodiments of the present application can improve the efficiency of under-screen biometric identification.

Abstract: Disclosed examples include LDMOS transistors and integrated circuits with a gate, a body region implanted in the substrate to provide a channel region under a portion of the gate, a source adjacent the channel region, a drain laterally spaced from a first side of the gate, a drift region including a first highly doped drift region portion, a low doped gap drift region above the first highly doped drift region portion, and a second highly doped region portion above the gap drift region, and an isolation structure extending through the second highly doped region portion into the gap drift region portion, with a first end proximate the drain region and a second end under the gate dielectric layer, where the body region includes a tapered side laterally spaced from the second end of the isolation structure to define a trapezoidal JFET region.

Abstract: An integrated circuit includes a Laterally Diffused MOSFET (LD-MOSFET) located over a semiconductor substrate. The LD-MOSFET transistor includes a dielectric filled trench at a surface of the semiconductor substrate, and a doped region of the semiconductor substrate adjacent the dielectric-filled trench. The doped region and the dielectric-filled trench share an interface that has a terminus at the surface of the semiconductor substrate. An oxide layer is located over the semiconductor substrate, including along a surface of the doped region and along a surface of the dielectric-filled trench. The oxide layer has a first thickness over the dielectric-filled trench and a second greater thickness over the doped region.

Abstract: A screen assembly with a fingerprint module includes: a transparent cover, a display module, and a fingerprint module. The display module is fixed to an inner surface of the transparent cover, and the display module includes a display area and a non-display area. The transparent cover has a fingerprint opening, and at least a portion of the fingerprint opening is in a projection area of the non-display area on the transparent cover. The fingerprint module is fixed to the transparent cover and is located in the fingerprint opening.

Abstract: The present disclosure provides a carrying device comprising: a supporting platform; a plurality of supporting strips disposed along at least two edges of an upper surface of the supporting platform, and at least one of the supporting strips being capable of moving on the supporting platform; and a first moving assembly that includes a first guide rail, a second guide rail and a first sliding block capable of sliding on the first and second guide rails, and the first and second guide rails being disposed parallelly on the upper surface of the supporting platform. The plurality of supporting strips include a first supporting strip having a side wall connected to a side wall of the first sliding block, and the first moving assembly is configured to drive moving of the first supporting strip.

Abstract: Provided are an under-screen biometric identification apparatus and an electronic device. The under-screen biometric identification apparatus includes: a lens disposed under a display screen for receiving an optical signal formed by reflection of a human finger on the display screen, where the optical signal is used to detect biometric information of the finger; a lens barrel, where the lens is fixed in the lens barrel; and a support, where the support is connected to the lens barrel by means of threaded connection for supporting the lens barrel. An under-screen biometric identification apparatus and an electronic device provided in embodiments of the present application can improve the efficiency of under-screen biometric identification.

Abstract: The Rds*Cgd figure of merit (FOM) of a laterally diffused metal oxide semiconductor (LDMOS) transistor is improved by forming the drain drift region with a number of dopant implants at a number of depths, and forming a step-shaped back gate region with a number of dopant implants at a number of depths to adjoin the drain drift region.

Abstract: In some embodiments, an apparatus comprises a semiconductor layer doped with a first-type dopant, a first region doped with the first-type dopant, a second region doped with the first-type dopant, and a third region doped with a second-type dopant, where the second-type dopant is opposite the first-type dopant. The first, second, and third regions are non-overlapping and are formed in the semiconductor layer. The third region is positioned between the first region and the second region. The apparatus also comprises a plurality of Zener implant regions buried in the semiconductor layer and the third region, where each of the plurality of Zener implant regions is configured to generate a different pinch-off region.

Abstract: An LDMOS transistor with a dummy gate comprises an extended drift region over a substrate, a drain region in the extended drift region, a channel region in the extended drift region, a source region in the channel region, a first dielectric layer with a first thickness formed over the extended drift region, a second dielectric layer with a second thickness formed over the extended drift region and the channel region, wherein the first thickness is greater than the second thickness, and wherein the first dielectric layer and the second dielectric layer form two steps, a first gate formed over the first dielectric layer and a second gate formed above the second dielectric layer.

Abstract: A staged injector in a combustor of a gas turbine. The staged injector may include an injector tube comprising a lateral wall enclosing an injection passageway that extends between an outlet and inlet. An outboard segment of the injector tube may include an exterior face. A cover may be formed about the outboard segment so form a surrounding plenum. The cover may include a side wall that radially overlaps the outboard segment and forms a first portion of the surrounding plenum therebetween. A ceiling wall of the cover may form a second portion of the surrounding plenum. A screening plate may be formed within the side wall of the cover that includes a multitude of apertures configured to fluidly connect the first portion of the surrounding plenum with a feed cavity formed exterior to the side wall.