Abstract: A HIT solar cell is provided, including a p-type crystalline silicon substrate having a light-receiving surface, a first intrinsic amorphous silicon thin-film layer formed on the light-receiving surface of the p-type crystalline silicon substrate, an n-type amorphous oxide layer formed on the first intrinsic amorphous silicon thin-film layer, and a first transparent conductive layer formed on the n-type amorphous oxide layer. In the HIT solar cell, the n-type amorphous oxide layer can be directly formed, without forming the first intrinsic amorphous silicon thin-film layer, and the n-type amorphous oxide layer can be divided into an n?-type amorphous oxide layer and an n+-type amorphous oxide layer that are formed sequentially.

Abstract: A method for manufacturing thin film solar cells, includes forming a light permeable first electrode layer in the back light surface of a glass substrate, and formed in the first electrode layer a plurality of first openings for exposing a part of the back light surface therefrom; forming a photoelectric conversion layer on the first electrode layer and the exposed back light surface, and forming a plurality of second openings in the photoelectric conversion layer for exposing a part of the first electrode layer therefrom; and forming a glistening second electrode layer having a plurality of third openings formed therein, wherein the second electrode layer comprises a conductive colloid comprised of non-diffractive fillings and polymeric base material.

Abstract: A method for manufacturing a P-I-N microcrystalline silicon structure for thin-film solar cells, includes the steps of: (a) forming a P-type layer; (b) forming an I-type layer including a plurality of sub-layers successively stacked on the P-type layer using gas mixtures including fluoride and hydride that have different gas ratios, respectively; and (c) forming an N-type layer on the I-type layer. First, second, and third I-type sub-layers may be formed on the P-type layer using gas mixtures including fluoride and hydride at a first, second, and third gas ratios, respectively. Then, advantageously, the third gas ratio may be larger than the second gas ratio and the second gas ratio may be larger than the first gas ratio, and the first gas ratio may be 8%, the second gas ratio may range between 15% and 35%, and the third gas ratio may range between 35% and 50%.

Abstract: A method for manufacturing a P-I-N microcrystalline silicon structure for thin-film solar cells, includes the steps of: (a) forming a P-type layer; (b) forming an I-type layer including a plurality of sub-layers successively stacked on the P-type layer using gas mixtures including fluoride and hydride that have different gas ratios, respectively; and (c) forming an N-type layer on the I-type layer. First, second, and third I-type sub-layers may be formed on the P-type layer using gas mixtures including fluoride and hydride at a first, second, and third gas ratios, respectively. Then, advantageously, the third gas ratio may be larger than the second gas ratio and the second gas ratio may be larger than the first gas ratio, and the first gas ratio may be 8%, the second gas ratio may range between 15% and 35%, and the third gas ratio may range between 35% and 50%.

Abstract: A method for manufacturing thin film solar cells, includes forming a light permeable first electrode layer in the back light surface of a glass substrate, and formed in the first electrode layer a plurality of first openings for exposing a part of the back light surface therefrom; forming a photoelectric conversion layer on the first electrode layer and the exposed back light surface, and forming a plurality of second openings in the photoelectric conversion layer for exposing a part of the first electrode layer therefrom; and forming a glistening second electrode layer having a plurality of third openings formed therein, wherein the second electrode layer comprises a conductive colloid comprised of non-diffractive fillings and polymeric base material.

Abstract: A conductive paste is provided. The conductive paste includes a polymer matrix and a filler blended in the polymer matrix, wherein the filler is non-spherical and at least one dimension of the filler has a length greater than or equal to ?/2n, wherein ? is a wavelength of light reflected by the conductive paste and n is a refractive index of the filler, and the polymer matrix and the filler have a weight ratio of 3:7 to 7:3.

Abstract: A gas distribution shower module and a film deposition apparatus are provided. The gas distribution shower module includes a first distributor, a second distributor, a third distributor and a fourth distributor. The second distributor is under the first distributor, the third distributor is under the second distributor, the fourth distributor is under the third distributor, and a distance is between the fourth distributor and the third distributor. The third distributor is divided into an inner region and an outer region, and an area ratio of the inner region to the outer region is from 1:1 to 1:5. Furthermore, the third distributor has a plurality of gas holes in the inner region and the outer region, and an area ratio of the gas holes in the inner region to the gas holes in the outer region is from 1:1 to 1:5.

Abstract: A solar cell and a method for fabricating the same are provided. The solar cell includes a first electrode, a second electrode, a photoelectric conversion layer and a non-conductive reflector. The first electrode including a nano-metal transparent conductive layer is disposed on a transparent substrate. The nano-metal transparent conductive layer substantially contacts with the photoelectric conversion layer. The second electrode is disposed between the photoelectric conversion layer and the transparent substrate. The photoelectric conversion layer is disposed between the first and the second electrodes. The non-conductive reflector is disposed on the first electrode.

Abstract: The present invention provides a gas distribution plate for providing at least two gas flowing channel. In one embodiment, the gas distribution plate has a first flowing channel, at least a second flowing channel disposed around the first flowing channel, and a tapered opening communicating with the first and the second flowing channel. In another embodiment, the gas distribution plate has a first flowing channel passing through a first and a second surface of the gas distribution plate, a second flowing channel paralleling to the first surface and a third flowing channel disposed at the second surface and communicating with the second flowing channel. The ends of the first and the third flowing channel have a tapered opening respectively. Besides, the present further provides a gas distribution apparatus for allowing at least two separate gases to be delivered independently into a process chamber while enabling the gases to be mixed completely after entering the processing chamber.