Abstract: A substrate support for use in a plasma processing chamber includes a substrate support body, a lifter pin and a lift mechanism. The substrate support body has a pin through-hole and the pin through-hole has a female-threaded inner wall. The lifter pin has a base segment, an intermediate segment, and a leading segment. The lifter pin is inserted into the pin through-hole, the intermediate segment is male-threaded, and the male-threaded intermediate segment is screwable to the female-threaded inner wall. The lift mechanism is configured to vertically move the lifter pin relative to the substrate support body.

Abstract: A plasma processing apparatus includes a mounting table, a power supply unit and a power supply control unit. The mounting table has therein a coil provided along a mounting surface on which a focus ring is mounted. The power supply unit is configured to apply a high frequency voltage to the coil. The power supply control unit is configured to control the power supply unit to increase a power of the high frequency voltage applied to the coil in accordance with consumption of the focus ring.

Abstract: A mounting table includes a wafer mounting surface mounting a wafer, a ring mounting surface disposed at a radially outer side of the wafer mounting surface and mounting a first ring having a first engaging portion and a second ring having a second engaging portion to be engaged with the first engaging portion, a lifter pin, and a driving mechanism. The second ring has a through-hole extends to reach a bottom surface of the first engaging portion, and the ring mounting surface has a hole at a position corresponding to the through-hole. A lifter pin has a first holding part that fits into the through-hole and a second holding part that extends from the first holding part and has a part protruding from the first holding part. The lifter pin is accommodated in the hole, and a driving mechanism vertically moves the lifter pin.

Abstract: A plasma processing method according to an exemplary embodiment includes a process of applying a first plasma processing to a substrate in a chamber, and a process of applying a second plasma processing to the substrate in the chamber. In the process of applying the first plasma processing, a plurality of first heaters in a chuck main body of an electrostatic chuck are driven, and a plurality of second heaters in the chuck main body are driven. In the process of applying the second plasma processing, the driving of at least the plurality of second heaters is stopped.

Abstract: There is provision of a plasma etching apparatus including a processing vessel capable of being evacuated, a lower electrode provided in the processing vessel that is configured to place a substrate, an upper electrode provided in the processing vessel arranged in parallel with the lower electrode so as to face each other, a process gas supply unit configured to supply process gas to a processing space between the upper electrode and the lower electrode, a high frequency power supply unit configured to supply high frequency electric power for generating plasma from process gas, a focus ring surrounding a periphery of the substrate, a direct current (DC) power source configured to output DC voltage applied to the focus ring, a heating unit configured to heat the focus ring, and a temperature measurement unit for measuring temperature of the focus ring.

Abstract: Disclosed is a method of inspecting a flow rate measuring system used in a substrate processing system. The flow rate measuring system provides a gas flow path used for calculating a flow rate in a build-up method. A gas output by a flow rate controller of a gas supply unit of the substrate processing system may be supplied to the gas flow path. In the method, apart from a previously obtained initial value of a volume of the gas flow path, a volume of the gas flow path is obtained at the time of inspection of the flow rate measuring system. Then, the obtained volume is compared to the initial value.

Abstract: An assembly provided with a coolant flow channel includes a base in which the coolant flow channel is formed; and a protrusion component that is disposed in the coolant flow channel, wherein the protrusion component is liftable or rotatable.

Abstract: One embodiment provides a rear portion structure of a saddle-ride type vehicle. The structure includes: seat frames inclined rearward and upward and supporting a riding seat; and a rear cowl having an upper cowl and a lower cowl. The upper cowl includes: a first cowl; and a second cowl which is connected to the first cowl and forms an opening upper edge portion of an opening for exposing a tail light. The lower cowl includes: a third cowl; and a fourth cowl which is connected to the third cowl and forms an opening lower edge portion of the opening. An approximately-U-shaped recessed portion is opened at a rear end of the third cowl. The fourth cowl forms the opening lower edge portion while covering the U-shaped recessed portion.

Abstract: A plasma processing apparatus includes a mounting table, a power supply unit and a power supply control unit. The mounting table has therein a coil provided along a mounting surface on which a focus ring is mounted. The power supply unit is configured to apply a high frequency voltage to the coil. The power supply control unit is configured to control the power supply unit to increase a power of the high frequency voltage applied to the coil in accordance with consumption of the focus ring.

Abstract: A plasma processing method according to an exemplary embodiment includes a process of applying a first plasma processing to a substrate in a chamber, and a process of applying a second plasma processing to the substrate in the chamber. In the process of applying the first plasma processing, a plurality of first heaters in a chuck main body of an electrostatic chuck are driven, and a plurality of second heaters in the chuck main body are driven. In the process of applying the second plasma processing, the driving of at least the plurality of second heaters is stopped.

Abstract: A maintenance apparatus includes a case and a maintenance mechanism. The case includes an opening having a size corresponding to a second gate of a vacuum processing apparatus including a processing chamber having a first gate through which a substrate is loaded and unloaded and the second gate different from the first gate. The case is attachable to the second gate while maintaining airtightness. The maintenance mechanism is provided in the case and is configured to perform at least one of an operation of detaching a consumed part in the processing chamber through the opening, an operation of attaching a replacement part in the processing chamber and an operation of cleaning the processing chamber.

Abstract: There is provided a plasma processing apparatus including a susceptor, having a substrate mounting portion for mounting thereon a substrate; a focus ring including an outer ring and an inner ring; a dielectric ring; a dielectric constant varying device for varying a dielectric constant of the dielectric ring; a grounding body positioned at an outside of the dielectric ring with a gap from a bottom surface of the focus ring; and a controller for controlling a top surface electric potential of the focus ring by controlling a current flowing from the susceptor to the substrate.

Abstract: A plasma processing apparatus of the present disclosure includes a chamber, a shutter, and a contact portion. The chamber has an opening in a sidewall thereof so as to carry a wafer W into the chamber through the opening, and performs therein a predetermined processing on the wafer W by plasma of a processing gas supplied thereinto. The shutter opens or closes the opening by moving along the sidewall of the chamber. The contact portion is formed of a conductive material, and is not in contact with the shutter while the shutter is moving. When the shutter is in the position for closing the opening, the contact portion is displaced in a direction different from the direction of movement of the shutter to come into contact with the shutter.

Abstract: One embodiment provides a rear portion structure of a saddle-ride type vehicle. The structure includes: seat frames inclined rearward and upward and supporting a riding seat; and a rear cowl having an upper cowl and a lower cowl. The upper cowl includes: a first cowl; and a second cowl which is connected to the first cowl and forms an opening upper edge portion of an opening for exposing a tail light. The lower cowl includes: a third cowl; and a fourth cowl which is connected to the third cowl and forms an opening lower edge portion of the opening. An approximately-U-shaped recessed portion is opened at a rear end of the third cowl. The fourth cowl forms the opening lower edge portion while covering the U-shaped recessed portion.

Abstract: A method includes a step of increasing or decreasing a flow rate of a gas of the a second gas supply system, by a predetermined time from a start of a gas treatment step of the process recipe or a by a predetermined time before a start of the gas treatment step, by using apparatus information regarding a first gas supply system of the first substrate treatment apparatus and the second gas supply system of the second substrate treatment apparatus, and arranging the treatment process, and in this step, the treatment process of the second substrate treatment apparatus performed using the process recipe conforms to the treatment process of the first substrate treatment apparatus performed using the process recipe.

Abstract: Provided is a pharmaceutical composition which enables the inhibition of formation and/or enlargement of cerebral aneurysm or the regression of cerebral aneurysm. The pharmaceutical composition for the inhibition of formation and/or enlargement of cerebral aneurysm or for the regression of cerebral aneurysm of the present invention, which includes a S1P1 receptor agonist as an active ingredient, enables the inhibition of formation and/or enlargement of cerebral aneurysm or the regression of cerebral aneurysm, and enables the prevention and/or treatment of a disease associated with cerebral aneurysm.

Abstract: Provided is a pharmaceutical composition which enables the inhibition of formation and/or enlargement of cerebral aneurysm or the regression of cerebral aneurysm. The pharmaceutical composition for the inhibition of formation and/or enlargement of cerebral aneurysm or for the regression of cerebral aneurysm of the present invention, which includes a S1P1 receptor agonist as an active ingredient, enables the inhibition of formation and/or enlargement of cerebral aneurysm or the regression of cerebral aneurysm, and enables the prevention and/or treatment of a disease associated with cerebral aneurysm.