Abstract: Disclosed herein is an autonomous cleaning machine with a brush cleaning unit to clean a brush unit. The autonomous cleaning machine includes a main body, the brush unit rotatably provided on the main body, first brush cleaning members contacting the brush unit to move foreign substances wound on the brush unit in a lengthwise direction of the brush unit, and second brush cleaning members contacting the brush unit to remove the foreign substances wound on the brush unit from the brush unit.

Abstract: Disclosed herein are a mobile robot system to restrict a traveling region of a robot and to guide the robot to another region, and a method of controlling the same. Only when a remote controller reception module of a beacon senses a signal transmitted from a mobile robot, the sensed result is reported to the mobile robot in the form of a response signal. In addition, the Field-of-View (FOV) of the remote control reception module is restricted by a directivity receiver. Only when the signal transmitted from the mobile robot is sensed within the restricted FOV, the sensed result is reported to the mobile robot.

Abstract: Disclosed herein is a localization system and method to recognize the location of an autonomous mobile platform. In order to recognize the location of the autonomous mobile platform, a beacon (three-dimensional structure) having a recognizable image pattern is disposed at a location desired by a user, the mobile platform which knows image pattern information of the beacon photographs the image of the beacon and finds and analyzes a pattern to be recognized from the photographed image. A relative distance and a relative angle of the mobile platform are computed using the analysis of the pattern such that the location of the mobile platform is accurately recognized.

Abstract: A semiconductor device incorporating a capacitor and a method of fabricating the same include a first inter-layer dielectric film formed on a semiconductor substrate, a first electrode pattern formed on the first inter-layer dielectric film, and a capacitor region self-aligned to the first electrode pattern and in which the first inter-layer dielectric film is etched. An MIM capacitor is conformably formed on the sidewall of the first electrode pattern in the capacitor region. In the capacitor region, a first hollow region is formed enclosed by the MIM capacitor and a second electrode pattern fills the first hollow region. The second electrode pattern has a sidewall opposite to the sidewall of the first electrode pattern. The MIM capacitor is conformably formed in the capacitor region that is deepened more than a thickness of an interconnection layer, so that it has a capacitor area wider than an area contacting with the interconnection layer.

Abstract: A test socket includes a socket body in which a semiconductor package is located, a socket head combined with the socket body, a Peltier element in the socket head, and power terminals connected to the Peltier element. A test equipment includes the test socket and a method of testing the semiconductor package uses the test socket.

Abstract: A robot cleaner that is capable of preventing dust collected in a dust tank from flowing backward outside when a situation in which the dust may be discharged outside occurs includes a cleaner body, a dust tank mounted in the cleaner body to collect dust, and a backward-flow preventing device to prevent dust from flowing backward outside through a suction port of the dust tank. The backward-flow preventing device includes a shutter unit to open and close the suction port and a stopper unit to drive the shutter unit.

Abstract: Disclosed herein are a robot cleaner that is capable of reflecting an obstacle sensed by obstacle sensors on a local map and a control method and medium of the same. The robot cleaner includes an obstacle sensor to sense an obstacle, a memory to store a local map, and a control unit to calculate an obstacle position using the obstacle sensor and to reflect the obstacle position around the robot cleaner on the local map.

Abstract: A robot cleaner that cleans a cleaning region while traveling the cleaning region and a method to control the same are provided. The robot cleaner can uniformly clean a cleaning region based on a wall-following technique which allows the robot cleaner to travel along the outline of the cleaning region. The method selects, as a reference wall, a wall at a left or right side of the robot cleaner at a start position of the robot cleaner based on a left or right-based travel algorithm, which allows the robot cleaner to travel along a left or right wall, and controls the robot cleaner to travel the cleaning region in a zigzag travel pattern in which the robot cleaner moves a predetermined distance in a direction perpendicular to the reference wall at specific intervals along the selected reference wall while following the selected reference wall.

Abstract: A robot cleaner having a configuration capable of improving an ability to collect dust, etc. is disclosed. The robot cleaner includes a suction hole to suction dust, a dust collector to receive the dust suctioned through the suction hole, and a rotating brush provided at a side of the suction hole. The robot cleaner is configured to sweep up and collect the dust into the dust collector by a drive force of the rotating brush.

Abstract: A test socket includes a socket body in which a semiconductor package is located, a socket head combined with the socket body, a Peltier element in the socket head, and power terminals connected to the Peltier element. A test equipment includes the test socket and a method of testing the semiconductor package uses the test socket.

Abstract: Electrical characteristics of a wafer are tested using a probe card while the wafer is placed on a wafer chuck. The wafer chuck cools the wafer to a predetermined temperature to test the electrical characteristics of the wafer at the normal temperature. Inside the wafer chuck, a plurality of thermoelectric elements are disposed in parallel with the top surface of the wafer chuck and current is applied to the thermoelectric elements. The thermoelectric elements heat or cool the wafer according to the direction of the applied current. The wafer chuck may heat the wafer to a predetermined temperature to test the electric characteristics of the wafer at a high temperature. The top surface of the wafer chuck may be heated by a heating coil installed on the wafer chuck.

Abstract: A small-sized Integrated Radio Frequency Type Repeater includes first and second Service (transmitting) Antennas, a Junction circuit part with RF type (200) which plays the role of relay, a Shield Box (400) which protects the first and second Service Donor (receiving) Antennas (310, 320) and a Junction circuit part (200) installed inside of the same body. (Cover) (500). The first Service (transmitting) Antenna (110) and the first Donor (receiving) Antenna (310) attached to opposite sides of the Shield Box (400) and the second Service Antenna (120) is separated from the first Service (transmitting) Antenna (110) between the inside of Cover (500) and the first Service (transmitting) Antenna (110), and the second Donor (receiving) Antenna (320) is installed to be separated from the first Donor (receiving) Antenna (310) between the inside of the Cover (500) and the first Donor (receiving) Antenna (310).

Abstract: A robot cleaner system and a control method thereof reduce manufacturing costs, expand a detected distance, and precisely control a movement and positioning of a robot cleaner. The robot cleaner system includes a robot cleaner and a station. One of the robot cleaner and the station transmits a signal of a predetermined frequency and the other receives the signal so that a direction toward the transmitting side for transmitting the signal is detected based on a Doppler shift observed by the receiving side that receives the signal.

Abstract: A semiconductor device incorporating a capacitor and a method of fabricating the same include a first inter-layer dielectric film formed on a semiconductor substrate, a first electrode pattern formed on the first inter-layer dielectric film, and a capacitor region self-aligned to the first electrode pattern and in which the first inter-layer dielectric film is etched. An MIM capacitor is conformably formed on the sidewall of the first electrode pattern in the capacitor region. In the capacitor region, a first hollow region is formed enclosed by the MIM capacitor and a second electrode pattern fills the first hollow region. The second electrode pattern has a sidewall opposite to the sidewall of the first electrode pattern. The MIM capacitor is conformably formed in the capacitor region that is deepened more than a thickness of an interconnection layer, so that it has a capacitor area wider than an area contacting with the interconnection layer.

Abstract: A robot system includes a position information emitting unit including a light emitter to emit a light including phase information and a supersonic wave emitter to emit a supersonic wave, and a robot including a light receiver to receive the light, a supersonic wave receiver to receive the supersonic wave, and a position determining part to determine a relative position of the robot with respect to the position information emitting unit based on the phase information of the light received through the light receiver and the supersonic wave received through the supersonic wave receiver. Thus the robot system can precisely determine the position of the robot regardless of external environments, and reduce cost of a configuration of the system.

Abstract: Oxide isolation regions are fabricated for integrated circuit substrates by forming a pad layer on an integrated circuit substrate and forming a silicon nitride mask on the pad layer. The mask exposes a portion of the pad layer. The exposed portion of the pad layer is thinned to thereby define a pad layer sidewall. A silicon nitride layer is formed on the silicon nitride mask, on the thinned pad layer and on the pad layer sidewall. The silicon nitride layer is selectively etched to form a silicon nitride spacer on the pad layer sidewall. The integrated circuit substrate is then oxidized, using the silicon nitride mask and the silicon nitride spacer as an oxidation mask, to thereby form an oxide isolation region in the thinned portion of the pad layer and in the integrated circuit substrate beneath the pad layer.