Abstract: A semiconductor device includes: a semiconductor substrate; an element region having a semiconductor element including an impurity layer and a trench, wherein the impurity layer is disposed in the trench, and wherein the trench is disposed on a main surface of the substrate; and a field region disposed around the element region. The trench is an aggregation of a plurality of stripe line trenches so that the element region has a polygonal shape. The field region includes a dummy trench disposed along with one side of the polygonal shape on a periphery of the element region. The dummy trench has a width and a longitudinal direction, which are equal to those of the trench. The field region further includes an impurity layer disposed in the dummy trench.

Abstract: A semiconductor device includes: a semiconductor substrate having a first surface and a second surface, wherein the substrate has a first conductive type; a first trench extending from the first surface of the semiconductor substrate in a depth direction; and an epitaxial semiconductor layer having a second conductive type, wherein the epitaxial semiconductor layer is disposed in the first trench. The first trench includes an inner wall as an interface between the semiconductor substrate and the epitaxial semiconductor layer so that the interface provides a PN junction. The first trench has an aspect ratio equal to or larger than 1.

Abstract: When a monochromatic mode is set, a CPU outputs a SW signal and executes a control to input an output from a monochromatic reading line sensor to a CCD signal processing section. Then, after a black level adjustment period ends and a black reference level reaches a desired value, the CPU starts reading of a black reference signal for shading correction. When a color mode is set, the CPU outputs a SW signal and executes a control to input an output from a color reading line sensor to the CCD signal processing section. After the black level adjustment period ends and the black reference level reaches a desired value, the CPU starts reading of a black reference signal for shading correction.

Abstract: The present invention provides a technology by which a fairly good monochromatic image without any picture quality deterioration can be obtained from a color image original. An image forming apparatus according to the present invention includes a luminance information acquiring portion adapted for acquiring luminance information of pixels forming an image; a color information acquiring portion adapted for acquiring color information of pixels forming the image; and a luminance information correcting portion adapted for executing a correction of said luminance information of pixels acquired by said luminance information acquiring portion based on said color information of pixels acquired by said color information acquiring portion.

Abstract: The present invention provides a technology by which a fairly good monochromatic image without any picture quality deterioration can be obtained from a color image original.

Abstract: The present invention provides a technology by which a high quality monochromatic image without any picture quality deterioration can be obtained from a color image original. An image processing apparatus according to the present invention, comprising: a hue information acquiring portion adapted for acquiring hue information regarding pixels forming an image; a concentration information acquiring portion adapted for acquiring hue concentration information regarding pixels forming the image; and a deterioration determining portion, wherein, in the event that a rate of the number of pixels having the same hue and color concentration as those of pixels forming the image is higher than a predetermined threshold value based on the hue information and the hue concentration information thus acquired, the deterioration determining portion is adapted for determining the possibility of occurrence of picture quality deterioration to be high when the image is transformed into a monochromatic image.

Abstract: Presence of a streak image in a sub-scanning direction with respect to the image signal of the document image photoelectrically converted by a photoelectric conversion unit which converts an image of a document scanned in a sub-scanning direction into an image signal for each line of a main scanning direction is detected, and an image signal of a pixel forming the streak image is corrected in the image signal of the document image photoelectrically converted by the photoelectric conversion unit in a case where it is detected that the streak image has been generated in the image signal of the document image.

Abstract: When a monochromatic copy mode is to be executed, a control section sets a read mode in a scanner section so as to enable the scanner section to read an image at high speed by means of only a line sensor K, sets in an image processing section an image process that can print monochromatic image information, which is sent from the scanner section, with a single black color in the printer section, and sets in the printer section a monochromatic print mode that can print a black image at high speed, thereby controlling a monochromatic copy operation.

Abstract: A light beam position detecting device detects the passage positions of a plurality of light beams for scanning the surface of a photosensitive drum. The light beam position detecting device has a sensor pattern for generating an output which is continuously changed in a wide range with a variation in the passage position of the light beam in a sub-scanning direction perpendicular to a main scanning direction of the light beam. The sensor pattern precisely detects the relative scanning position of the light beam in a wide range. The passage positions of the plurality of light beams for scanning the surface of the photosensitive drum are controlled to a preset position based on the output of the sensor pattern.

Abstract: A light beam position detecting device detects the passage positions of a plurality of light beams for scanning the surface of a photosensitive drum. The light beam position detecting device has a sensor pattern for generating an output which is continuously changed in a wide range with a variation in the passage position of the light beam in a sub-scanning direction perpendicular to a main scanning direction of the light beam. The sensor pattern precisely detects the relative scanning position of the light beam in a wide range. The passage positions of the plurality of light beams for scanning the surface of the photosensitive drum are controlled to a preset position based on the output of the sensor pattern.

Abstract: A semiconductor device includes a base P region, a source N+ region, and a drain N+ region formed in a surface layer portion on a principal surface in an N? silicon layer. In the surface layer portion on the principal surface, an N well region is formed deeper than the drain N+ region in a region including the drain N+ region and is in contact with the base P region. A trench is formed so as to penetrate the base P region in a direction toward the drain N+ region from the source N+ region as a planar structure. A gate electrode is formed via a gate insulating film in the inside of the trench.

Abstract: A four-line CCD sensor is structured by line sensors R, G, B in which color filters are respectively disposed on surfaces of light receiving elements, and a line sensor BK at which no color filter is disposed. Amplitudes of signals which are outputted from the line sensors R, G, B at a time of reading a color document, and an amplitude of a signal which is outputted from the line sensor BK at a time of reading a monochrome document are adjusted so as to be substantially equal to one another. In a case in which a color document is read, outputs of the line sensors R, G, B are selectively provided, and in a case in which a monochrome document is read, output of the line sensor BK is selectively provided.

Abstract: A semiconductor device includes a base P region, a source N+ region, and a drain N+ region formed in a surface layer portion on a principal surface in an N? silicon layer. In the surface layer portion on the principal surface, an N well region is formed deeper than the drain N+ region in a region including the drain N+ region and is in contact with the base P region. A trench is formed so as to penetrate the base P region in a direction toward the drain N+ region from the source N+ region as a planar structure. A gate electrode is formed via a gate insulating film in the inside of the trench.

Abstract: Methods and apparatus for color signal compensation are disclosed. A quality of one type of signal is enhanced using a second type of signal, wherein the second type of signal has a higher quality than that of the unenhanced first type of signal. This may be used in an image forming apparatus for scanning a color image, and using higher-resolution monochrome signals to enhance the resolution of lower-resolution color signals.

Abstract: A first trench is formed in a surface of an n+-type semiconductor substrate that forms a source region. A p-type base region, an n?-type drift region, and an n+-type drain region are deposited in this order in the first trench using epitaxial growth. A second trench extending from the source region to the drift region through the base region is formed in the surface. A gate insulating film and a gate electrode are formed on a surface defining the second trench. The n+-type drain region has a location where growing surfaces come together in epitaxial growth and where a defect is likely to occur, and the gate electrode lacks such a location and thus avoids an increase in normalized ON resistance. Therefore, the breakdown voltage remains high without increasing the ON resistance.

Abstract: A semiconductor device includes a semiconductor substrate and a semiconductor layer. The semiconductor substrate has a main surface that is an Si{100} surface. The substrate has a trench in the main surface. The semiconductor layer is located on surfaces defining the trench to have common crystallographic planes with the semiconductor substrate. The trench is defined by a bottom surface, two long sidewall surfaces that face each other, and two short sidewall surfaces that face each other. The bottom surface and the long sidewall surfaces are Si{100} surfaces.

Abstract: A light beam position detecting device detects the passage positions of a plurality of light beams for scanning the surface of a photosensitive drum. The light beam position detecting device has a sensor pattern for generating an output which is continuously changed in a wide range with a variation in the passage position of the light beam in a sub-scanning direction perpendicular to a main scanning direction of the light beam. The sensor pattern precisely detects the relative scanning position of the light beam in a wide range. The passage positions of the plurality of light beams for scanning the surface of the photosensitive drum are controlled to a preset position based on the output of the sensor pattern.

Abstract: A semiconductor device includes a semiconductor substrate and a semiconductor layer. The semiconductor substrate has a main surface that is an Si{100} surface. The substrate has a trench in the main surface. The semiconductor layer is located on surfaces defining the trench to have common crystallographic planes with the semiconductor substrate. The trench is defined by a bottom surface, two long sidewall surfaces that face each other, and two short sidewall surfaces that face each other. The bottom surface and the long sidewall surfaces are Si{100} surfaces.

Abstract: A light beam position detecting device detects the passage positions of a plurality of light beams for scanning the surface of a photosensitive drum. The light beam position detecting device has a sensor pattern for generating an output which is continuously changed in a wide range with a variation in the passage position of the light beam in a sub-scanning direction perpendicular to a main scanning direction of the light beam. The sensor pattern precisely detects the relative scanning position of the light beam in a wide range. The passage positions of the plurality of light beams for scanning the surface of the photosensitive drum are controlled to a preset position based on the output of the sensor pattern.

Abstract: When a monochromatic original is read, a control is effected to transfer a charge accumulated in a monochromatic photodiode array to a rear stage, and not to accumulate charges in respective color photodiode arrays. When a color original is read, a control is effected to transfer charges accumulated in the respective photodiode arrays and not to accumulate a charge in the monochromatic photodiode array.