Abstract: A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED.

Abstract: A high brightness III-Nitride based Light Emitting Diode (LED), comprising multiple surfaces covered by Zinc Oxide (ZnO) layers, wherein the ZnO layers are grown in a low temperature aqueous solution and each have a (0001) c-orientation and a top surface that is a (0001) plane.

Abstract: Disclosed herein is a rod type light emitting device and method for fabricating the same, wherein a plurality of rod structures is sequentially formed with a semiconductor layer doped with a first polarity dopant, an active layer, and a semiconductor layer doped with a second polarity dopant.

Abstract: A high brightness III-Nitride based Light Emitting Diode (LED), comprising multiple surfaces covered by Zinc Oxide (ZnO) layers, wherein the ZnO layers are grown in a low temperature aqueous solution and each have a (0001) c-orientation and a top surface that is a (0001) plane.

Abstract: A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED.

Abstract: A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED.

Abstract: Disclosed herein is a rod type light emitting device and method for fabricating the same, wherein a plurality of rod structures is sequentially formed with a semiconductor layer doped with a first polarity dopant, an active layer, and a semiconductor layer doped with a second polarity dopant.

Abstract: A light emitting device and a method for fabricating the same according to the present invention are advantageous in that since an LLO (Laser Lift Off) process is performed using a thick metal film grown through a growth process, an occurrence rate of a void is remarkably decreased due to dense bonding between metals so that an occurrence rate of a crack can be decreased. Further, the present invention has an advantage in that a metal is filled in trench regions formed through an isolation process for devices, thereby protecting the devices and ensuring excellent heat dissipation. The present invention has a further advantage in that a reflective film is formed on inclined sidewalls of a device-forming thin film layer so that light loss through lateral sides of the device can be reduced, thereby improving optical properties.

Abstract: A high brightness III-Nitride based Light Emitting Diode (LED), comprising multiple surfaces covered by Zinc Oxide (ZnO) layers, wherein the ZnO layers are grown in a low temperature aqueous solution and each have a (0001) c-orientation and a top surface that is a (0001) plane.

Abstract: A rod type light emitting device and a method for fabricating the same are disclosed, wherein rods are formed of a material capable of emitting light on a first polarity layer, and a second polarity layer is formed to wrap around each of the rods, such that a light emitting area increases and the amount of light emitted to the outside without being confined within a device also increases, thereby improving the light output of the device. Further, an active layer is formed of a nano rod structure to enhance light extraction efficiency.

Abstract: A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED.

Abstract: A high output light emitting diode (LED) and a method for fabricating the LED is disclosed. The LED includes a sidewall or surface that is inclined. A reflective film is formed on the inclined sidewall or surface to allow light to reflect from the reflective film and to emit the light upward or in a favorable direction with respect to the device, thereby being configured and enabled to improve a light output of the LED and dispense with an additional passivation process.

Abstract: A packaging method for light emitting diodes provides both high light extraction and heat dissipation using a transparent vertical stand structure. A light emitting diode (LED) is attached to a vertical stand structure for supporting the LED, wherein the LED is bonded to the vertical stand structure, so that one of the LED's sides faces vertically upwards, another of the LED's sides faces vertically downwards, a top surface of the LED faces horizontally sideways in one direction, and a bottom surface of the LED faces horizontally sideways in another direction. The vertical stand structure comprises a connecting stem between the LED and a header, and is made of a material that provides for heat dissipation and may also be transparent to light generated in the LED, such as sapphire or zinc oxide. The LED and the vertical stand structure may be encapsulated within a mold.

Abstract: A light emitting device having a vertical structure, which includes a semiconductor layer having a first surface and a second surface, a first electrode arranged on the first surface of the semiconductor layer, a transparent conductive oxide (TCO) layer arranged on the second surface of the semiconductor layer and a second electrode arranged on the TCO layer.

Abstract: A light emitting device having a vertical structure, which includes a semiconductor layer having a first surface and a second surface, a first electrode arranged on the first surface of the semiconductor layer, a transparent conductive oxide (TCO) layer arranged on the second surface of the semiconductor layer and a second electrode arranged on the TCO layer.

Abstract: A light emitting device having a vertical structure, which includes a semiconductor layer having a first surface and a second surface, a first electrode arranged on the first surface of the semiconductor layer, a transparent conductive oxide (TCO) layer arranged on the second surface of the semiconductor layer and a second electrode arranged on the TCO layer.

Abstract: A semiconductor light emitting device and a fabrication method thereof includes: providing a substrate; forming an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer on the substrate; forming a first transparent electrode having holes per a certain region on the p-type semiconductor layer; and forming a first pad on the first transparent electrode.

Abstract: A semiconductor light emitting device and a fabrication method thereof includes: providing a substrate; forming an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer on the substrate; forming a first transparent electrode having holes per a certain region on the p-type semiconductor layer; and forming a first pad on the first transparent electrode.

Abstract: A semiconductor light emitting device and a fabrication method thereof includes: providing a substrate; forming an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer on the substrate; forming a first transparent electrode having holes per a certain region on the p-type semiconductor layer; and forming a first pad on the first transparent electrode. A method of fabricating a semiconductor light emitting device, and which includes forming a light emitting layer on the first type semiconductor layer; forming a second type semiconductor layer on the light emitting layer; forming a first transparent electrode on the second type semiconductor layer, the first transparent electrode having holes per a certain region to thereby expose the second type semiconductor layer; forming a second transparent electrode on the first transparent electrode; forming a first pad on the second transparent electrode; and forming a second pad over the first type semiconductor layer.