Patents by Inventor Jun Taek Park

Jun Taek Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11187976
    Abstract: A method of detecting defects of a photoresist pattern includes generating a scanning electron microscope (SEM) image of a surface of a photoresist pattern and signal intensity data relative to pixel position of the surface of the photoresist pattern. The method also includes setting a lower reference intensity threshold value and an upper reference intensity threshold value used as reference values for detecting defects. The method further includes classifying a pixel position of the signal intensity data having a signal intensity value which is less than the lower reference intensity threshold value or greater than the upper reference intensity threshold value as a defect position.
    Type: Grant
    Filed: September 10, 2020
    Date of Patent: November 30, 2021
    Assignee: SK hynix Inc.
    Inventor: Jun Taek Park
  • Patent number: 11165943
    Abstract: A camera module includes a PCB (Printed Circuit Board) installed with an image sensor, a base mounted on the PCB, and a bobbin reciprocatingly mounted above the base. A bottom elastic member is fixed to the base to support the bobbin, and a terminal is installed at the base, one end of which is conductively connected to the PCB and the other end of which is conductively connected to the bottom elastic member at a solder part. A solder cut-off part is formed at the base to cut off movement of overflowing solder from the solder part.
    Type: Grant
    Filed: June 12, 2020
    Date of Patent: November 2, 2021
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Sang Ok Park, Seong Min Lee, Jun Taek Lee, Byung Wook Son
  • Patent number: 11156851
    Abstract: Disclosed is a lens moving apparatus. The lens moving apparatus includes a moving unit having at least one lens installed therein and moving by electromagnetic interaction between magnets and coils, elastic members configured to support the moving unit, and position sensors configured to sense change of electromagnetic force emitted from the magnets according to movement of the moving unit and to output an output signal based on a result of sensing, and a primary resonant frequency of frequency response characteristics according to gain of a ratio of the output signal of the position sensors to an input signal applied to the coils is 30 Hz to 200 Hz.
    Type: Grant
    Filed: January 7, 2019
    Date of Patent: October 26, 2021
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Sang Ok Park, Byung Wook Son, Kyoung Ho Yoo, Jun Taek Lee
  • Publication number: 20210302005
    Abstract: An air permeable cap for a vehicle may include: a cover part formed in a cylindrical shape with a closed end part, and having a plurality of guide ribs radially formed on an inner circumferential surface thereof; a foam part inserted and installed in the cover part so as to be contacted with the guide ribs, and having a ventilation hole formed on one side thereof; a membrane part installed between the foam part and the cover part, and configured to block a flow of water through the ventilation hole and allow a flow of air through the ventilation hole; and an adhesion retention part coupled in a concave-convex shape to retain an adhesion force between the foam part and the cover part.
    Type: Application
    Filed: March 26, 2021
    Publication date: September 30, 2021
    Applicants: HYUNDAI MOBIS CO., LTD., AMOGREENTECH CO., LTD.
    Inventors: Jin Won LEE, Young Ho LEE, Jun Keun CHO, Kyoung Taek PARK, Hyoung Joo KIM, Sang Yeop SHIM, Sung Pil CHO
  • Publication number: 20210302002
    Abstract: Provided is a ventilation member for a vehicle lamp. The ventilation member includes a nanofiber membrane, a composite adhesive layer stacked on one surface of the nanofiber membrane, and a ventilation structure provided in a central portion of the composite adhesive layer and in contact with the nanofiber membrane. The composite adhesive layer includes an acrylic adhesive layer in contact with the nanofiber membrane and a silicone-based adhesive layer provided on one surface of the acrylic adhesive layer. The acrylic adhesive layer is in contact with the nanofiber membrane, the acrylic adhesive layer is infiltrated into the nanofiber membrane to a depth of 30 ?m or more. The ventilation member for a vehicle lamp has a water pressure resistance of 1.0 bar or more.
    Type: Application
    Filed: March 25, 2021
    Publication date: September 30, 2021
    Applicants: HYUNDAI MOBIS CO., LTD., AMOGREENTECH CO., LTD.
    Inventors: Jin Won LEE, Young Ho LEE, Jun Keun CHO, Kyoung Taek PARK, Hyoung Joo KIM, Sang Yeop SHIM, Sung Pil CHO
  • Publication number: 20210281725
    Abstract: Embodiments provide a lens moving apparatus including a first magnet, a housing, a bobbin, around which a coil is wound and which moves in a first direction in the housing, an upper elastic member disposed on upper surfaces of the bobbin and the housing, a lower elastic member disposed under lower surfaces of the bobbin and the housing, and a damping member disposed between the upper or lower elastic member and the bobbin.
    Type: Application
    Filed: May 21, 2021
    Publication date: September 9, 2021
    Inventors: Sang Ok Park, Seong Min Lee, Jun Taek Lee, Byung Wook Son
  • Patent number: 11114017
    Abstract: A Mura correction driver which corrects Mura detected in a detection image obtained by photographing a display panel. The Mura correction driver uses Mura correction data including a position value of a Mura block for a display panel and coefficient values for the Mura block, and corrects display data corresponding to the position value of the Mura block, by using a Mura correction equation to which the coefficient values of the Mura block are applied.
    Type: Grant
    Filed: December 20, 2019
    Date of Patent: September 7, 2021
    Assignee: Silicon Works Co., Ltd.
    Inventors: Ki Taek Kim, Jun Young Park, Doo Hwa Jang, Seung Wan Yu, Do Yeon Kim
  • Publication number: 20200409256
    Abstract: A method of detecting defects of a photoresist pattern includes generating a scanning electron microscope (SEM) image of a surface of a photoresist pattern and signal intensity data relative to pixel position of the surface of the photoresist pattern. The method also includes setting a lower reference intensity threshold value and an upper reference intensity threshold value used as reference values for detecting defects. The method further includes classifying a pixel position of the signal intensity data having a signal intensity value which is less than the lower reference intensity threshold value or greater than the upper reference intensity threshold value as a defect position.
    Type: Application
    Filed: September 10, 2020
    Publication date: December 31, 2020
    Applicant: SK hynix Inc.
    Inventor: Jun Taek PARK
  • Patent number: 10802396
    Abstract: A method of detecting defects of a photoresist pattern includes generating a scanning electron microscope (SEM) image of a surface of a photoresist pattern and signal intensity data relative to pixel position of the surface of the photoresist pattern. The method also includes setting a lower reference intensity threshold value and an upper reference intensity threshold value used as reference values for detecting defects. The method further includes classifying a pixel position of the signal intensity data having a signal intensity value which is less than the lower reference intensity threshold value or greater than the upper reference intensity threshold value as a defect position.
    Type: Grant
    Filed: May 30, 2019
    Date of Patent: October 13, 2020
    Assignee: SK hynix Inc.
    Inventor: Jun Taek Park
  • Publication number: 20200142297
    Abstract: A method of detecting defects of a photoresist pattern includes generating a scanning electron microscope (SEM) image of a surface of a photoresist pattern and signal intensity data relative to pixel position of the surface of the photoresist pattern. The method also includes setting a lower reference intensity threshold value and an upper reference intensity threshold value used as reference values for detecting defects. The method further includes classifying a pixel position of the signal intensity data having a signal intensity value which is less than the lower reference intensity threshold value or greater than the upper reference intensity threshold value as a defect position.
    Type: Application
    Filed: May 30, 2019
    Publication date: May 7, 2020
    Applicant: SK hynix Inc.
    Inventor: Jun Taek PARK
  • Publication number: 20190286983
    Abstract: Provided is a machine learning-based semiconductor manufacturing yield prediction system and method. A result prediction method according to an embodiment of the present invention comprises: learning different neural network models by classifying different types of data according to their types and respectively inputting the classified different types of data to the different neural network models; and predicting result values by classifying input data according to their types and respectively inputting the classified input data to different neural network models. Therefore, it is possible to apply different neural network models to respective data according to their types, thereby ensuring a neural network model having a structure appropriate for the characteristics of each type of data and thus accurately predicting a result value.
    Type: Application
    Filed: November 29, 2017
    Publication date: September 19, 2019
    Applicant: SK HOLDINGS CO., LTD.
    Inventors: Hang Duk JUNG, Yong Sik MOON, Myung Seung SON, Min Hwan LEE, Jun Taek PARK
  • Patent number: 9478618
    Abstract: A semiconductor device includes a fin-shaped active region protruding from a surface of a base substrate. The fin-shaped active region includes a first impurity region and a second impurity region spaced apart from each other along a first direction and a channel region disposed between the first and second impurity regions. A trench is provided in the base substrate under the channel region. The trench extends in a second direction to intersect the fin-shaped active region in a plan view. A blocking layer fills the trench to overlap with the channel region of the fin-shaped active region. A gate is disposed to overlap with blocking layer and the channel region.
    Type: Grant
    Filed: March 25, 2016
    Date of Patent: October 25, 2016
    Assignee: SK Hynix Inc.
    Inventor: Jun Taek Park
  • Patent number: 8906584
    Abstract: A semiconductor device includes a cell mask pattern disposed in a cell region of a mask substrate and a vernier mask pattern disposed in a vernier region of the mask substrate. The vernier mask pattern includes a variable mask pattern portion to transfer a different shape of pattern depending on the magnitude of exposure energy.
    Type: Grant
    Filed: March 18, 2013
    Date of Patent: December 9, 2014
    Assignee: SK Hynix Inc.
    Inventors: Byoung Hoon Lee, Chang Moon Lim, Myoung Soo Kim, Jeong Su Park, Jun Taek Park, In Hwan Lee
  • Patent number: 8841219
    Abstract: Lithography processes are provided. The lithography process includes installing a reticle masking (REMA) part having a REMA open region in a lithography apparatus, loading a reticle including at least one reticle chip region in which circuit patterns are disposed into the lithography apparatus, and sequentially exposing a first wafer field, which includes a first chip region corresponding to the reticle chip region, and a second wafer field, which includes a second chip region corresponding to the reticle chip region, of a wafer to rays using the reticle and the REMA part to transfer images of the circuit patterns onto the wafer. An edge boundary of the REMA open region transferred on the first wafer field is located on a scribe lane region between the first and second chip regions while the first wafer field is exposed. Methods of manufacturing a semiconductor device using the lithography process are also provided.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: September 23, 2014
    Assignee: SK Hynix Inc.
    Inventors: Jun Taek Park, Chang Moon Lim, Seok Kyun Kim
  • Publication number: 20140065524
    Abstract: A semiconductor device includes a cell mask pattern disposed in a cell region of a mask substrate and a vernier mask pattern disposed in a vernier region of the mask substrate. The vernier mask pattern includes a variable mask pattern portion to transfer a different shape of pattern depending on the magnitude of exposure energy.
    Type: Application
    Filed: March 18, 2013
    Publication date: March 6, 2014
    Applicant: SK HYNIX INC.
    Inventors: Byoung Hoon LEE, Chang Moon LIM, Myoung Soo KIM, Jeong Su PARK, Jun Taek PARK, In Hwan LEE
  • Publication number: 20130210234
    Abstract: Lithography processes are provided. The lithography process includes installing a reticle masking (REMA) part having a REMA open region in a lithography apparatus, loading a reticle including at least one reticle chip region in which circuit patterns are disposed into the lithography apparatus, and sequentially exposing a first wafer field, which includes a first chip region corresponding to the reticle chip region, and a second wafer field, which includes a second chip region corresponding to the reticle chip region, of a wafer to rays using the reticle and the REMA part to transfer images of the circuit patterns onto the wafer. An edge boundary of the REMA open region transferred on the first wafer field is located on a scribe lane region between the first and second chip regions while the first wafer field is exposed. Methods of manufacturing a semiconductor device using the lithography process are also provided.
    Type: Application
    Filed: September 14, 2012
    Publication date: August 15, 2013
    Applicant: SK HYNIX INC.
    Inventors: Jun Taek PARK, Chang Moon LIM, Seok Kyun KIM
  • Patent number: 7571424
    Abstract: A lithography method has a simulation method for mathematically approximating a photoresist film pattern with a Diffused Aerial Image Model (“DAIM”) for semiconductor device fabrication. The DAIM is applied with at least two acids having heterogeneous diffusion characteristics.
    Type: Grant
    Filed: November 3, 2006
    Date of Patent: August 4, 2009
    Assignee: Hynix Semiconductor Inc.
    Inventors: Chang Moon Lim, Jun Taek Park