Patents by Inventor Jung Eon Park

Jung Eon Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240100969
    Abstract: An embodiment structural battery for an electric vehicle includes an upper rail and a lower rail coupled with the upper rail, wherein the upper rail and the lower rail are electrically connected with each other by a terminal and a wiring, so that the upper rail and the lower rail electrically connected with each other serve as both the structural battery and a roof rail of a vehicle body.
    Type: Application
    Filed: September 22, 2023
    Publication date: March 28, 2024
    Inventors: Won Ki Song, Chun-Gon Kim, Hyun Wook Park, Joo-Seung Choi, Jung-Eon Noh
  • Publication number: 20240106055
    Abstract: An embodiment structural battery for an electric vehicle includes a plurality of cells stacked on each other, each of the plurality of cells including a positive electrode layer, an electrolyte layer, and a negative electrode layer stacked with the electrolyte layer between the positive and negative electrodes, wherein the plurality of cells define a battery by electrical connection of a positive electrode terminal and a negative electrode terminal respectively provided in the plurality of cells, structure reinforcement layers stacked on each of an outermost upper layer and an outermost lower layer of the plurality of cells, and carbon fiber current collecting layers stacked between each of the structure reinforcement layers and the plurality of cells.
    Type: Application
    Filed: June 19, 2023
    Publication date: March 28, 2024
    Inventors: Won Ki Song, Jai Hak Kim, Chun-Gon Kim, Hyun Wook Park, Joo-Seung Choi, Jung-Eon Noh
  • Publication number: 20240084967
    Abstract: To improve productivity and sealing performance, the present disclosure provides a pressure vessel including a boss part including a boss extension portion that is provided in a cylindrical shape, a boss flange portion integrally extending from a lower portion of the boss extension portion, and a boss support portion integrally extending from an inner end of the boss flange portion, a fusion-coupling part insert-injected in a form surrounding an outer surface of one side of the boss support portion in the circumferential direction, and a liner part which has an accommodation space for accommodating a fluid therein, extends in a longitudinal direction, and has both open sides, and the liner part is made of the same material as the fusion-coupling part, and both inner circumferences of the liner part are in surface contact with and fusion-coupled to an outer circumference of the fusion-coupling part.
    Type: Application
    Filed: November 10, 2022
    Publication date: March 14, 2024
    Inventors: Jung Han LEE, Sang Eon PARK, Sung Man SOHN
  • Patent number: 7030476
    Abstract: Disclosed is a rectifier diode device. The rectifier diode device includes a conductive base, a semiconductor chip, a conductive lead and insulation resin. A trench and a post are formed in the conductive base in order to increase a bonding surface between the conductive base and the insulating resin and to lengthen a humidity transfer path for the semiconductor chip. Due to the trench and the post, the bonding surface between the conductive base and the insulating resin increases and the humidity transfer path for the semiconductor chip lengthens, thereby improving heat emission performance of the rectifier diode device. A plurality of prismatic protrusions is formed at an outer peripheral wall of the conductive wire so that coupling force between the conductive wire and an external device is improved. A protrusion ring is provided at a lower surface of the conductive wire so that stress applied to the semiconductor chip is minimized when the rectifier diode device is press-fitted into the external device.
    Type: Grant
    Filed: September 2, 2004
    Date of Patent: April 18, 2006
    Assignee: KEC Corporation
    Inventors: Jung Eon Park, Lee Dong Kim
  • Patent number: 5773852
    Abstract: A shorted anode lateral insulated gate bipolar transistor includes a semiconductor layer of a first conductivity type, a first current electrode, a second current electrode, a first insulation layer, a first gate electrode, a second gate electrode, a first high concentration impurity region of a second conductivity type, a low concentration impurity region of the second conductivity type, a first high concentration impurity region of the first conductivity type, a second high concentration impurity region of the second conductivity type, a third high concentration impurity region of the second conductivity type, and a second high concentration impurity region of the first conductivity type.
    Type: Grant
    Filed: July 15, 1996
    Date of Patent: June 30, 1998
    Assignee: Korea Electronics Co., Ltd.
    Inventors: Min-Koo Han, Byeong-Hoon Lee, Moo-Sup Lim, Yearn-Ik Choi, Jung-Eon Park, Won-Oh Lee