Patents by Inventor Jung Han Shin

Jung Han Shin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7417246
    Abstract: Disclosed herein is an organic thin film transistor comprising a substrate, a gate electrode, an organic insulating layer, an organic active layer and source/drain electrodes, wherein the interface between the organic insulating layer and the organic active layer is of relief structure. According to the present invention, an organic thin film transistor of enhanced electric properties can be obtained regardless of the organic insulating materials used.
    Type: Grant
    Filed: May 14, 2004
    Date of Patent: August 26, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung Han Shin, Eun Mi Seo, Kook Min Han, Evgeny Barmatov, Valery Shibaev
  • Publication number: 20080176105
    Abstract: An organometallic complex for a light emitting layer includes a heterocyclic ligand and a bivalent metal bonded to the heterocyclic ligand, wherein the heterocyclic ligand includes a plurality of linked ring structures that include a total of at least 17 carbon atoms and 1 heteroatom, and the linked ring structures have substantially parallel planes.
    Type: Application
    Filed: December 26, 2007
    Publication date: July 24, 2008
    Inventors: Jung-Han Shin, Seung-Gak Yang, Hee-Yeon Kim, Chang-Ho Lee, Hee-Joo Ko
  • Publication number: 20080157071
    Abstract: A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and is electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an ohmic contact layer that is interposed between the source/drain electrodes and the organic semiconductor and contains a compound having a hole transporting unit. By providing the ohmic contact layer, the ohmic contact between source/drain electrodes and the organic semiconductor layer can be effectively achieved and the adhesive force between the source/drain electrodes and the organic semiconductor layer is increased. In addition, a flat panel display having improved reliability can be obtained using the thin film transistor.
    Type: Application
    Filed: March 13, 2008
    Publication date: July 3, 2008
    Applicant: Samsung SDI Co., Ltd.
    Inventors: Taek AHN, Min-Chul Suh, Jin-Saong Park, Seok-Jong Lee, Jung-Han Shin
  • Publication number: 20080153991
    Abstract: Disclosed herein are methods of making a negative pattern of carbon nanotubes or a polymerized carbon nanotube composite having an interpenetrating polymer network (IPN) by modifying the surfaces of the carbon nanotubes with polymerizable functional groups such as oxirane and anhydride groups and subjecting the surface-modified carbon nanotubes either to a photolithography process or to a heatcuring process. By virtue of the present invention, desired patterns of carbon nanotubes can be easily made on the surfaces of various substrates, and polymerized carbon nanotube composites improved in hardening properties can be made without additional polymers.
    Type: Application
    Filed: May 9, 2007
    Publication date: June 26, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jong Jin Park, Jung Han Shin, Sang Yoon Lee
  • Publication number: 20080125593
    Abstract: Imidazopyridine-based compounds and organic light emitting diodes (OLEDs) including organic layers including the imidazopyridine-based compounds are provided. The organic light emitting diodes including organic layers having the imidazopyridine-based compounds have low driving voltages, high efficiencies, high luminance, long life-times and low power consumption.
    Type: Application
    Filed: October 24, 2007
    Publication date: May 29, 2008
    Inventors: Hee-Yeon Kim, Seung-Gak Yang, Jung-Han Shin, Chang-Ho Lee, Hee-Joo Ko
  • Patent number: 7368510
    Abstract: An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C2-30 heteroaromatic structure. Methods of synthesis and electronic devices incorporating the disclosed organic semiconductors, e.g., as a channel layer, are also disclosed.
    Type: Grant
    Filed: March 8, 2005
    Date of Patent: May 6, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Bang Lin Lee, Kook Min Han, Jung Han Shin, Sang Yoon Lee, Eun Jeong Jeong
  • Publication number: 20080100565
    Abstract: An elecotrophoretic display device includes a first substrate, a gate line formed on the first substrate, a data line crossing the gate line to form a defined area, a source electrode connected to the data line, a drain electrode facing the source electrode to define a channel area, a color filter formed on the first substrate, a first electrode formed on the color filter, the first electrode electrically connected to the drain electrode, a second substrate facing the first substrate, a second electrode formed on the second substrate and a fluid and a plurality of charged particles interposed between the first electrode and the second electrode.
    Type: Application
    Filed: October 24, 2007
    Publication date: May 1, 2008
    Inventors: Keun-Kyu Song, Jung-Han Shin, Bo-Sung Kim
  • Publication number: 20080076204
    Abstract: A method for manufacturing a thin film transistor (“TFT”) array panel includes forming a gate electrode, forming source and drain electrodes insulated from the gate electrode, forming an organic semiconductor contacting the source and drain electrodes, spraying a solvent on the organic semiconductor, drying the solvent at room temperature, and annealing the organic semiconductor.
    Type: Application
    Filed: September 21, 2007
    Publication date: March 27, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Min-Ho YOON, Young-Min KIM, Jung-Han SHIN, Joon-Hak OH, Tae-Young CHOI, Seung-Hwan CHO
  • Publication number: 20080038867
    Abstract: A method for manufacturing a thin film transistor array panel includes forming a gate electrode, forming a source electrode and a drain electrode opposing each other and separated from each other on the gate electrode, forming a gate insulator on the gate electrode, forming an organic semiconductor on the gate insulator, and forming a passivation member covering the organic semiconductor, wherein the source and drain electrodes contact the organic semiconductor, and an ink-jet printing process is used to form at least two among the gate insulator, the organic semiconductor, and the passivation member, and wherein a mixed solvent including at least two among a gate insulator material, an organic semiconductor material, and a passivation member material is sprayed in the ink-jet printing process.
    Type: Application
    Filed: May 8, 2007
    Publication date: February 14, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung-Han SHIN, Bo-Sung KIM, Seong-sik SHIN
  • Publication number: 20080035919
    Abstract: Disclosed is a thin film transistor array panel including a substrate, a data line formed on the substrate, a gate line that intersects the data line and includes a gate electrode, a source electrode connected to the data line, and a drain electrode facing the source electrode. An organic semiconductor contacts the source electrode and the drain electrode via an insulating layer having an opening that defines the location of the organic semiconductor. The insulating layer includes an acrylic photosensitive resin having a fluorine-containing compound. A method of manufacturing the above-described thin film transistor array panel is disclosed.
    Type: Application
    Filed: August 9, 2007
    Publication date: February 14, 2008
    Inventors: Jung-Han Shin, Keun-Kyu Song, Tae-Young Choi, Young-Min Kim, Joon-Hak Oh, Seung-Hwan Cho
  • Publication number: 20080038881
    Abstract: A thin film transistor array panel according to an embodiment of the present invention includes a gate electrode, a source electrode and a drain electrode opposing each other and separated from each other on the gate electrode. An organic semiconductor is in contact with the source electrode and the drain electrode. A gate insulator is formed between the gate electrode and the organic semiconductor. A pixel electrode is connected to the drain electrode. A passivation member covers the organic semiconductor and includes a nonionic soluble polymer.
    Type: Application
    Filed: January 10, 2007
    Publication date: February 14, 2008
    Inventors: Jung-Han Shin, Joon-Hak Oh, Min-Ho Yoon
  • Publication number: 20080012024
    Abstract: An organic thin film transistor (“TFT”) substrate for facilitating control of the turn-on and turn-off actions of the TFT. The organic TFT substrate includes a gate line on a substrate, a pixel electrode in the same plane as the gate line, a data line insulated from the gate line, an organic TFT including a gate electrode connected to the gate line, a source electrode connected to the data line and insulated from the gate line, a drain electrode connected to the pixel electrode and insulated from the gate electrode, and an organic semiconductor layer contacting each of the source and drain electrodes, and a gate-insulating layer on the gate line and the gate electrode.
    Type: Application
    Filed: July 12, 2007
    Publication date: January 17, 2008
    Inventors: Keun Kyu SONG, Seung Hwan Cho, Bo Sung Kim, Young Min Kim, Jung Han Shin
  • Publication number: 20070181873
    Abstract: Example embodiments of the present invention relate to an organic-inorganic hybrid polymer having capped terminal hydroxyl groups and an organic insulator composition including the hybrid polymer and methods thereof. The organic-inorganic hybrid polymer may be prepared by capping terminal hydroxyl groups of silanol moieties that do not participate in the formation of an intermolecular network in an organic-inorganic hybrid material, with an organosilane compound. The organic-inorganic hybrid polymer may increase the hysteresis and physical properties of an organic thin film transistor. The organic-inorganic hybrid polymer may be more effectively utilized in the manufacture of liquid crystal displays (LCDs).
    Type: Application
    Filed: October 16, 2006
    Publication date: August 9, 2007
    Inventors: Hyun Sik Moon, Eun Jeong Jeong, Eun Kyung Lee, Sang Yoon Lee, Jung Han Shin, Kyung Seok Son
  • Publication number: 20070164278
    Abstract: Provided are an organic light emitting device (OLED) and a flat display including the OLED. The OLED includes an organic layer which includes a pixel electrode, an opposite electrode, and at least an emission layer between the pixel electrode and the opposite electrode, wherein the emission layer includes a long wavelength-blue emission layer emitting blue light having a long wavelength and a short wavelength-blue emission layer emitting blue light having a short wavelength. The long wavelength-blue emission layer is positioned in a location to enhance emission of blue light from the emission layer. The OLED can emit blue light with high efficiency and high brightness.
    Type: Application
    Filed: January 18, 2007
    Publication date: July 19, 2007
    Inventors: Chang-Ho Lee, Seung-Gak Yang, Hee-Yeon Kim, Jung-Han Shin, Hee-Joo Ko
  • Patent number: 7241652
    Abstract: Disclosed herein is a method for fabricating an organic thin film transistor that includes a gate electrode, a gate insulating film, source/drain electrodes and an organic semiconductor layer formed in this order on a substrate wherein the surface of the gate insulating film on which source/drain electrodes are formed is impregnated with an inorganic or organic acid, followed by annealing. According to the method, the surface of a gate insulating film damaged by a photoresist process can be effectively recovered. In addition, organic thin film transistors having high charge carrier mobility and high on/off current ratio can be fabricated.
    Type: Grant
    Filed: May 6, 2005
    Date of Patent: July 10, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyun Jung Park, Bon Won Koo, Joo Young Kim, Jung Han Shin, Eun Jeong Jeong, Sang Yoon Lee
  • Patent number: 7229747
    Abstract: Disclosed herein are methods of making a negative pattern of carbon nanotubes or a polymerized carbon nanotube composite having an interpenetrating polymer network (IPN) by modifying the surfaces of the carbon nanotubes with polymerizable functional groups such as oxirane and anhydride groups and subjecting the surface-modified carbon nanotubes either to a photolithography process or to a heatcuring process. By virtue of the present invention, desired patterns of carbon nanotubes can be easily made on the surfaces of various substrates, and polymerized carbon nanotube composites improved in hardening properties can be made without additional polymers.
    Type: Grant
    Filed: February 26, 2004
    Date of Patent: June 12, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong Jin Park, Jung Han Shin, Sang Yoon Lee
  • Patent number: 7226804
    Abstract: A method for forming a pattern of an organic insulating film by forming an electrode on a substrate, coating an imprintable composition thereon to form an organic insulating film, pressurizing and curing the organic insulating film using a patterned mold to transfer a pattern of the mold to the organic insulating film, and etching a portion of the organic insulating film remaining on the electrode. Since a pattern of an organic insulating film can be formed by simple molding without the use of a photoresist, the overall procedure is simplified and eventually an organic thin film transistor with high charge carrier mobility can be fabricated by all wet processes.
    Type: Grant
    Filed: August 3, 2005
    Date of Patent: June 5, 2007
    Assignee: Samsung Electronic Co., Ltd.
    Inventors: Jung Han Shin, Joon Yong Park, Min Seong Ryu, Young Mok Son, Sang Yoon Lee
  • Publication number: 20070090352
    Abstract: A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and is electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an ohmic contact layer that is interposed between the source/drain electrodes and the organic semiconductor and contains a compound having a hole transporting unit. By providing the ohmic contact layer, the ohmic contact between source/drain electrodes and the organic semiconductor layer can be effectively achieved and the adhesive force between the source/drain electrodes and the organic semiconductor layer is increased. In addition, a flat panel display having improved reliability can be obtained using the thin film transistor.
    Type: Application
    Filed: October 18, 2006
    Publication date: April 26, 2007
    Applicant: Samsung SDI Co., Ltd.
    Inventors: Taek Ahn, Min-Chul Suh, Jin-Seong Park, Seok-Jong Lee, Jung-Han Shin
  • Publication number: 20070080346
    Abstract: An organic thin film transistor array panel according to an embodiment of the present invention includes: a substrate; a first signal line disposed on the substrate; a second signal line intersecting the first signal line; a source electrode connected to the first signal line; a drain electrode separated from source electrode; an organic semiconductor member connected to source electrode and drain electrode; a pixel electrode connected to drain electrode; and a passivation layer disposed on pixel electrode and having light-induced alignment.
    Type: Application
    Filed: October 4, 2006
    Publication date: April 12, 2007
    Inventors: Bo-Sung Kim, Kyu-Sik Kim, Jung-Han Shin, Mun-Pyo Hong
  • Publication number: 20070026536
    Abstract: An organic thin film transistor for a liquid crystal display and a method of manufacturing an organic thin film transistor. The method of manufacturing an organic thin film transistor for a liquid crystal display comprises forming a gate conductive film pattern on a substrate; forming a gate insulating film on the substrate and the gate conductive film pattern; forming source and drain electrodes on the gate insulating film; forming an organic semiconductor thin film on an exposed surface of the gate insulating film and the source and drain electrodes; and forming a diamond-like-carbon thin film as an alignment film. A passivation film and the alignment film can both be provided using the diamond-like-carbon thin film.
    Type: Application
    Filed: June 7, 2006
    Publication date: February 1, 2007
    Inventors: Kyu-sik Kim, Bo-sung Kim, Jung-han Shin, Mun-pyo Hong