Abstract: The present disclosure relates to a substrate with multiple nano-gaps and a manufacturing method therefor, and more particularly to a multiple nano-gaps substrate with high absorption and capable of using light sources in a wide range, and a manufacturing method therefor.

Abstract: The present disclosure relates to a substrate with multiple nano-gaps and a manufacturing method therefor, and more particularly to a multiple nano-gaps substrate with high absorption and capable of using light sources in a wide range, and a manufacturing method therefor.

Abstract: The present disclosure related to a thin metal film substrate and a method for preparing the same and more particularly, to a thin metal film substrate including a substrate; and a thin metal film comprising Ag or an Ag alloy formed on the substrate, wherein the thin metal film is formed to have preferred orientation corresponding to the preferred orientation of the substrate during the initial growth. The thin metal film substrate according to an example grows in a 2D continuous thin film from the initial growth to provide excellent light transmittance and conductivity.

Abstract: Disclosed are a substrate for surface-enhanced Raman spectroscopy allowing surface-enhanced Raman signals to be notably improved, even in cases of long-term storage, by producing the substrate so that metal nanoparticles thereon are distanced several nanometers apart, and a method for producing the substrate for surface-enhanced Raman spectroscopy at a large scale with simple equipment and at a low production cost.

Abstract: Disclosed are a substrate for surface-enhanced Raman spectroscopy allowing surface-enhanced Raman signals to be notably improved, even in cases of long-term storage, by producing the substrate so that metal nanoparticles thereon are distanced several nanometers apart, and a method for producing the substrate for surface-enhanced Raman spectroscopy at a large scale with simple equipment and at a low production cost.

Abstract: A transparent or conductive substrate and its manufacturing method are provided. The transparent or conductive substrate comprises a base substrate capable of light transmission; a transparent electroconductive layer formed by depositing a transparent electroconductive material; and an anti-reflection layer, wherein the anti-reflection layer is formed by using a dry etching method and comprises a plurality of spine-type structures and an anti-reflection structure formed by depositing inorganic particles.

Abstract: In one embodiment, the display device includes a display panel and a support frame. The display panel includes a flexible upper substrate, at least one light emitting diode, and a flexible lower substrate (30). The display panel has a display area formed at a portion corresponding to the light emitting diode, and a non-display area formed at a portion other than the display area. The display panel is coupled to the support frame such that a portion of the non-display area is bent with respect to the display area.

Abstract: In one embodiment, the display device includes a display panel and a support frame. The display panel includes a flexible upper substrate, at least one light emitting diode, and a flexible lower substrate (30). The display panel has a display area formed at a portion corresponding to the light emitting diode, and a non-display area formed at a portion other than the display area. The display panel is coupled to the support frame such that a portion of the non-display area is bent with respect to the display area.

Abstract: In one embodiment, the display device includes a display panel and a support frame. The display panel includes a flexible upper substrate, at least one light emitting diode, and a flexible lower substrate (30). The display panel has a display area formed at a portion corresponding to the light emitting diode, and a non-display area formed at a portion other than the display area. The display panel is coupled to the support frame such that a portion of the non-display area is bent with respect to the display area.

Abstract: Disclosed are a thin film solar cell and a method of manufacturing the thin film solar cell. The thin film solar cell according to an exemplary embodiment of the present invention thin film solar cell includes a substrate: a front electrode layer formed on the substrate; an oxide layer formed on the front electrode layer: a light absorbing layer (intrinsic layer) formed on the oxide layer; and a back electrode layer formed on the light absorbing layer, wherein the oxide layer is formed of a material selected from MoO2, WO2, V2O5, NiO and CrO3.

Abstract: Disclosed are a thin film solar cell and a method of manufacturing the thin film solar cell. The thin film solar cell according to an exemplary embodiment of the present invention thin film solar cell includes a substrate: a front electrode layer formed on the substrate; an oxide layer formed on the front electrode layer: a light absorbing layer (intrinsic layer) formed on the oxide layer; and a back electrode layer formed on the light absorbing layer, wherein the oxide layer is formed of a material selected from MoO3, WO3, V2O5, NiO and CrO3.

Abstract: A method for manufacturing a poly-crystal silicon photovoltaic device using horizontal metal induced crystallization comprises the steps of forming at least one layer of an amorphous silicon thin film on a substrate, forming at least one groove of which depth is less than or equal to that of the thin film on the amorphous silicon thin film, and horizontally crystallizing the amorphous silicon thin film by forming a metal layer on an upper portion of the groove. Since a crystal shape and a growth direction of the photovoltaic device can be adjusted by the method, a poly-crystal silicon thin film for improving current flow can be formed at a low-temperature.

Abstract: A method for manufacturing a poly-crystal silicon photovoltaic device using horizontal metal induced crystallization comprises the steps of forming at least one layer of an amorphous silicon thin film on a substrate, forming at least one groove of which depth is less than or equal to that of the thin film on the amorphous silicon thin film, and horizontally crystallizing the amorphous silicon thin film by forming a metal layer on an upper portion of the groove. Since a crystal shape and a growth direction of the photovoltaic device can be adjusted by the method, a poly-crystal silicon thin film for improving current flow can be formed at a low-temperature.

Abstract: The present invention relates to a photovoltaic conversion apparatus including a by-pass diode and a manufacturing method thereof. The photovoltaic conversion apparatus of the present invention comprises at least one unit solar cell module configured of at least one unit solar cell; and a by-pass solar cell module including at least one solar cell electrically connected to the unit solar cell to by-pass current. According to the present invention, a photovoltaic conversion apparatus having high photoelectric conversion efficiency can be manufactured. Also, the photovoltaic conversion apparatus will contribute to earths environmental conservation as the next clean energy source and can be directly applied to private facilities, public facilities, military facilities, etc., to create enormous economic value.

Abstract: A photoelectric conversion device includes at least one p-type semiconductor layer made of amorphous like hydrogenated carbon film or diamond like carbon (DLC) film doped with acceptor impurities such as boron (B). In a solar cell having a photoelectric conversion region, hydrogenated carbon is used as substances forming a p-type semiconductor layer, making it possible to provide a solar cell with high photoelectric conversion efficiency.