Abstract: An evaporator for an ice maker includes an evaporator body having a refrigerant flow path formed therein; a dipping member connected to the evaporator body, for a refrigerant having a temperature lower than a freezing point of water to flow in the refrigerant flow path to generate ice in a state in which at least a portion of the dipping member is submerged in water; a heater having at least a portion inserted into the refrigerant flow path, and directly or indirectly heating at least one of the refrigerant in the refrigerant flow path, the evaporator body, and the dipping member to separate the ice generated on the dipping member from the dipping member; and a connection member connecting the evaporator body and the refrigerant flow path to be connected to a refrigeration cycle, and inserting the at least a portion of the heater into the refrigerant flow path.

Abstract: A cancer targeted therapeutic agent includes a drug-linker-AS1411 structure. The drug may be selected from monomethyl auristatin E (MMAE), monomethyl auristatin F (MMAF), cytarabine, gemcitabine, maytansine, DM1, DM4, calicheamicin and a derivative thereof, doxorubicin, duocarmycin and a derivative thereof, pyrrolobenzodiazepine (PBD), SN-38, a-amanitin, or a tubulysin analog.

Abstract: The present technology relates to an electronic device. A storage device in which a memory device controls an ODT operation to improve operation performance of the memory device with a small number of pins includes a plurality of memory devices comprising a target memory device in which an operation is performed and non-target memory devices, and a memory controller configured to control the plurality of memory devices. Each of the plurality of memory devices includes an on die termination (ODT) flag generator configured to generate a flag that indicates that an ODT operation is possible for the non-target memory devices, and an ODT performer configured to determine whether the ODT operation is an ODT read operation for a read operation or an ODT write operation for a write operation based on the flag and configured to generate an enable signal that enables the ODT read operation or the ODT write operation.

Abstract: Error correction code apparatuses and memory systems are disclosed. The apparatus may include an encoder configured to generate a first result by multiplying bits of the data by a first matrix, divides parity bits into a first parity group obtained by multiplying the first result by a second matrix and a second parity group obtained by an exclusive OR operation of the first result and the first parity group, based on a plurality of polynomials determined based on the second matrix, and multiply the first result and the second matrix to generate one or more first parity bits in the first parity group, perform an exclusive OR operation on the first result and the first parity group to generate one or more second parity bits in the second parity group, and generate a codeword having the bits of the data bits and the parity bits.

Abstract: Error correction code apparatuses and memory systems are disclosed. The apparatus may include an encoder configured to generate a first result by multiplying bits of the data by a first matrix, divides parity bits into a first parity group obtained by multiplying the first result by a second matrix and a second parity group obtained by an exclusive OR operation of the first result and the first parity group, based on a plurality of polynomials determined based on the second matrix, and multiply the first result and the second matrix to generate one or more first parity bits in the first parity group, perform an exclusive OR operation on the first result and the first parity group to generate one or more second parity bits in the second parity group, and generate a codeword having the bits of the data bits and the parity bits.

Abstract: A composite material steel sheet comprises: at least one steel sheet, and a resin-impregnated paper composite layer, wherein the resin-impregnated paper composite layer may comprise stacked sheets of paper, and impregnated resin provide adhesion between the sheets of paper in contact with each other.

Abstract: A semiconductor device is disclosed. A semiconductor device according to an example of the present disclosure includes a gate electrode of a ring shape having an opening area on a substrate; a P-type deep well region formed in the opening area; a drain region formed on the P-type deep well region; an N-type well region overlapping with the gate electrode; a source region formed in the N-type well region; a bulk tab region formed by being isolated from the source region by a first isolation region; a P-type drift region formed in contact with the N-type well region; and a second isolation region formed near the bulk tab region.

Abstract: A PVA brush cleaning method includes immersing a PVA brush in a cleaning solution containing an organic matter, thereby removing a siloxane compound in the PVA brush; and applying vibration to the PVA brush, thereby removing impurities in the PVA brush.

Abstract: A substrate treating apparatus includes a plurality of load ports on which carriers having substrates received therein are placed, a plurality of process chambers that perform processes on the substrates, and a transfer robot that transfers the substrates between the load ports and the process chambers. The transfer robot is movable along a transfer passage having a lengthwise direction formed along a first direction, the load ports and the process chambers are arranged along the first direction on one side and an opposite side of the transfer passage, and the transfer robot transfers the substrates between the carriers placed on the load ports and the process chambers.

Abstract: Provided is a surface-treated metallic material with easy control of glossiness and a manufacturing method therefor, the surface-treated metallic material comprising: a metallic material; and a coating layer which is formed on at least one side of the metallic material and on which an ultraviolet curable coating composition is cured, wherein the coating layer consists of a plurality of protrusions, which have a volume of 3 to 16 pico liters and are arranged at a density of 5 to 610 per 1 mm2 of the metallic material. As such, the surface-treated steel sheet is excellent in adhesion, scratch resistance and corrosion resistance, and has easy control of glossiness.

Abstract: The inventive concept provides an apparatus for supporting a substrate. An apparatus for treating a substrate includes a process chamber that performs a predetermined process on the substrate and a reversing unit that reverses the substrate. The reverse unit includes a grip unit that grips the substrate and a drive unit that rotates the grip unit to reverse the substrate gripped by the grip unit. The grip unit includes a first body that supports one of an upper surface and a lower surface of the substrate and a second body that supports the other surface of the substrate. Each of the first body and the second body includes a support protrusion that is brought into contact with the substrate when the grip unit grips the substrate.

Abstract: A semiconductor device is disclosed. A semiconductor device according to an example of the present disclosure includes a gate electrode of a ring shape having an opening area on a substrate; a P-type deep well region formed in the opening area; a drain region formed on the P-type deep well region; an N-type well region overlapping with the gate electrode; a source region formed in the N-type well region; a bulk tab region formed by being isolated from the source region by a first isolation region; a P-type drift region formed in contact with the N-type well region; and a second isolation region formed near the bulk tab region.

Abstract: A semiconductor device include a nonvolatile memory device, including a first well region formed in a substrate, a tunneling gate insulator formed on the first well region, a floating gate formed on the tunneling gate insulator, a control gate insulator formed on the substrate, a control gate formed on the control gate insulator, and a first source region and a first drain region formed on opposite sides of the control gate, respectively, and a first logic device, including a first logic well region formed in the substrate, a first logic gate insulator formed on the first logic well region, a first logic gate formed on the first logic gate insulator, wherein the first logic gate comprises substantially a same material as a material of the control gate of the nonvolatile memory device.

Abstract: A substrate treating apparatus includes a chamber having a treatment space, a first power supply that is connected to a first component provided in the treatment space and transmits power having a first frequency to the first component, a second power supply that is provided in the treatment space, is connected to a second component different from the first component, and transmits power having a second frequency smaller than the first frequency to the second component, and a coupling blocking structure installed on a power line connected to the second power supply and the second component, wherein the coupling blocking structure is electrically connected to the power line and includes a conductive line having a coil shape.

Abstract: A semiconductor device include a nonvolatile memory device, including a first well region formed in a substrate, a tunneling gate insulator formed on the first well region, a floating gate formed on the tunneling gate insulator, a control gate insulator formed on the substrate, a control gate formed on the control gate insulator, and a first source region and a first drain region formed on opposite sides of the control gate, respectively, and a first logic device, including a first logic well region formed in the substrate, a first logic gate insulator formed on the first logic well region, a first logic gate formed on the first logic gate insulator, wherein the first logic gate comprises substantially a same material as a material of the control gate of the nonvolatile memory device.

Abstract: The present disclosure relates to a polyarylene sulfide resin composition for an automobile headlamp component, a method for producing the same, and an automobile headlamp component manufactured using the same. The polyarylene sulfide resin composition includes: about 45 wt % to about 75 wt % of a polyarylene sulfide resin containing about 300 ppm or less of chlorine; about 24.5 wt % to about 55 wt % of an inorganic filler; about 0.1 wt % to about 1 wt % of a nucleating agent; about 0.05 wt % to about 1 wt % of metal powder; and about 0.1 wt % to about 2.5 wt % of a composite metal hydroxide.

Abstract: The present technology relates to an electronic device. A storage device in which a memory device controls an ODT operation to improve operation performance of the memory device with a small number of pins includes a plurality of memory devices comprising a target memory device in which an operation is performed and non-target memory devices, and a memory controller configured to control the plurality of memory devices. Each of the plurality of memory devices includes an on die termination (ODT) flag generator configured to generate a flag that indicates that an ODT operation is possible for the non-target memory devices, and an ODT performer configured to determine whether the ODT operation is an ODT read operation for a read operation or an ODT write operation for a write operation based on the flag and configured to generate an enable signal that enables the ODT read operation or the ODT write operation.

Abstract: Provided is a thin glass-laminated printed steel sheet comprising: a printed steel sheet including a metal sheet and a printed layer on which a design or a pattern having a high resolution of 300 dpi or higher is printed on a surface of the metal sheet; an adhesive layer formed by curing an ultraviolet curable adhesive solution on the printed steel sheet, having a thickness of 10 to 100 ?m, and being transparent; and a flexible thin glass attached by the adhesive layer, wherein a reference value for color density (Dmax Comparison) is higher than 1.6, as measured by a spectrophotometer.

Abstract: An evaporator for an ice maker includes an evaporator body having a refrigerant flow path formed therein; a dipping member connected to the evaporator body, for a refrigerant having a temperature lower than a freezing point of water to flow in the refrigerant flow path to generate ice in a state in which at least a portion of the dipping member is submerged in water; a heater having at least a portion inserted into the refrigerant flow path, and directly or indirectly heating at least one of the refrigerant in the refrigerant flow path, the evaporator body, and the dipping member to separate the ice generated on the dipping member from the dipping member; and a connection member connecting the evaporator body and the refrigerant flow path to be connected to a refrigeration cycle, and inserting the at least a portion of the heater into the refrigerant flow path.

Abstract: An oligonucleotide variant according to an embodiment of the present disclosure has a structure of Formula 1 may exhibit excellent in-vivo stability and anticancer effects: (N)x-[TGG]m[TTG][TGG]n-(M)y??[Formula 1] wherein, N and M are independently deoxyuridine (dU), deoxycytidine (dC), uridine (U), or cytidine (C), in which a halogen or hydroxy group is bound to 5- or 2?-position thereof; x and y are independently integers of 0 to 10 (except when x and y are simultaneously 0), n is an integer of 1 to 10; and m is an integer of 1 to 10.