Abstract: An object of the present invention is to improve manufacturing efficiency of a semiconductor device. The method of manufacturing a semiconductor device includes a sealing step of sealing a semiconductor chip mounted on the wiring substrate. The sealing step includes a step of arranging the wiring substrate between an upper mold and a lower mold, suctioning a lower surface of the wiring substrate with the plurality of suction holes, thereby holding the wiring substrate the upper mold, and a step of sealing the semiconductor chip, an upper surface of the wiring substrate, and the plurality of side surfaces of the wiring substrate such that each of the semiconductor chip, the upper surface of the wiring substrate, and the plurality of side surfaces of the wiring substrate is covered with the resin in the lower mold.

Abstract: An object of the present invention is to improve manufacturing efficiency of a semiconductor device. The method of manufacturing a semiconductor device includes a sealing step of sealing a semiconductor chip mounted on the wiring substrate. The sealing step includes a step of arranging the wiring substrate between an upper mold and a lower mold, suctioning a lower surface of the wiring substrate with the plurality of suction holes, thereby holding the wiring substrate the upper mold, and a step of sealing the semiconductor chip, an upper surface of the wiring substrate, and the plurality of side surfaces of the wiring substrate such that each of the semiconductor chip, the upper surface of the wiring substrate, and the plurality of side surfaces of the wiring substrate is covered with the resin in the lower mold.

Abstract: A compact electronic device as a constituent element of a wireless communication system using a sensor. A first feature of the device is that a first semiconductor chip is bare-chip-mounted over a front surface of a first wiring board in the form of a chip and a second semiconductor chip is bare-chip-mounted over a second wiring board in the form of a chip. A second feature is that a wireless communication unit and a data processing unit which configure a module are separately mounted. A third feature is that the first and second wiring boards are stacked in the board thickness direction to make up the module (electronic device).

Abstract: A compact electronic device as a constituent element of a wireless communication system using a sensor. A first feature of the device is that a first semiconductor chip is bare-chip-mounted over a front surface of a first wiring board in the form of a chip and a second semiconductor chip is bare-chip-mounted over a second wiring board in the form of a chip. A second feature is that a wireless communication unit and a data processing unit which configure a module are separately mounted. A third feature is that the first and second wiring boards are stacked in the board thickness direction to make up the module (electronic device).

Abstract: A semiconductor device has a die pad, a heat dissipating plate in the form of a frame arranged between the die pad and leads so as to surround the die pad, members that connect the die pad and the inner edge of the heat dissipating plate, and a suspension lead linked to the outer extension of the heat dissipating plate. A semiconductor chip larger than the die pad is mounted over the die pad and the members. Top surfaces of the die pad and the members in opposition to the back surface of the chip are bonded to the back surface of the chip with silver paste. Heat is conducted from the back surface of the chip to the heat dissipating plate via the silver paste, the die pad, and the members, and dissipated to the outside of the semiconductor device via the leads.

Abstract: A semiconductor device has a die pad, a heat dissipating plate in the form of a frame arranged between the die pad and leads so as to surround the die pad, members that connect the die pad and the inner edge of the heat dissipating plate, and a suspension lead linked to the outer extension of the heat dissipating plate. A semiconductor chip larger than the die pad is mounted over the die pad and the members. Top surfaces of the die pad and the members in opposition to the back surface of the chip are bonded to the back surface of the chip with silver paste. Heat is conducted from the back surface of the chip to the heat dissipating plate via the silver paste, the die pad, and the members, and dissipated to the outside of the semiconductor device via the leads.

Abstract: To improve the heat dissipation characteristics of a semiconductor device. The semiconductor device has a die pad, a heat dissipating plate in the form of a frame arranged between the die pad and a plurality of leads so as to surround the die pad, a plurality of members that connect the die pad and the inner edge of the heat dissipating plate, and a suspension lead linked to the outer extension of the heat dissipating plate, wherein a semiconductor chip the outer shape of which is larger than the die pad is mounted over the die pad and the members. The top surface of the die pad and the top surface of the members at the part in opposition to the back surface of the semiconductor chip are bonded to the back surface of the semiconductor chip in their entire surfaces with a silver paste.

Abstract: To improve the heat dissipation characteristics of a semiconductor device. The semiconductor device has a die pad, a heat dissipating plate in the form of a frame arranged between the die pad and a plurality of leads so as to surround the die pad, a plurality of members that connect the die pad and the inner edge of the heat dissipating plate, and a suspension lead linked to the outer extension of the heat dissipating plate, wherein a semiconductor chip the outer shape of which is larger than the die pad is mounted over the die pad and the members. The top surface of the die pad and the top surface of the members at the part in opposition to the back surface of the semiconductor chip are bonded to the back surface of the semiconductor chip in their entire surfaces with a silver paste.

Abstract: To relieve symptoms caused by mineral deficiency such as taste abnormality and skin damage due to zinc deficiency, anemia due to iron deficiency and decreased bone mineral content due to calcium deficiency to thereby improve quality of life (QOL). Namely, foods such as foods for specific health uses and foods with nutrient function claims containing 0.1% or marc, based on gram of a dry natural plant material comprising a papaya powder etc., of zinc which are prepared by nonproliferatively stirring and/or shaking the natural plant material in a state of being suspended in a solution containing 100 ppm or greater of zinc.

Abstract: A highly sensitive charged particle measuring device capable of measuring low-level alpha rays comprises in a measurement chamber 7 provided with a sealable door 15, a test sample 2 and a semiconductor detector 1, a radiation measuring circuit 30 including a preamplifier 30c connected to the semiconductor detector 1, a linear amplifier 30d, and a pulse height analyzer 30e, a charged particle emission amount arithmetic unit 40 for performing the quantitative analysis of charged particles from its measurement, a display unit for displaying its analysis result, and further has an evacuation pipe line and a pure gas supply pipe line for performing supply and replacement of the pure gas in the measuring chamber 7.

Abstract: For preventing &agr;-rays induced soft errors in a semiconductor device in which solder bumps are connected with Cu wirings formed on Al wirings, bump lands connected with solder bumps and Cu wirings connected integrally therewith are constituted of a stacked film of a Cu film and an Ni film formed thereon, the thickness of the stacked film is larger than the thickness of the photosensitive polyimide resin film, the thickness of the inorganic passivation film, the thickness of the third Al wiring layer and the bonding pad and the thickness of the second interlayer insulative film formed below the Cu wirings and the bump land, that is, the bump land being constituted with such a thickness as larger than any of the thickness for the insulation material and the wiring material interposed between the MISFET (n-channel MISFET and p-channel MISFET) constituting the memory cell and the bump land.

Abstract: A highly sensitive charged particle measuring device capable of measuring low-level alpha rays comprises in a measurement chamber 7 provided with a sealable door 15, a test sample 2 and a semiconductor detector 1, a radiation measuring circuit 30 including a preamplifier 30c connected to the semiconductor detector 1, a linear amplifier 30d, and a pulse height analyzer 30e, a charged particle emission amount arithmetic unit 40 for performing the quantitative analysis of charged particles from its measurement, a display unit for displaying its analysis result, and further has an evacuation pipe line and a pure gas supply pipe line for performing supply and replacement of the pure gas in the measuring chamber 7.

Abstract: A semiconductor device in which a semiconductor chip 1 is bonded by a metal bond 2 to one surface of a heat sink 4 formed of a material with a thermal expansion coefficient is close to he semiconductor chip 1, the heat sink 4 is glued to a stiffener with a silicon adhesive 5 with an elastic modulus of 10 MPa or less, a TAB tape 9 is glued to the stiffener 3 with an epoxy adhesive 6, and the semiconductor chip 1 is sealed with an epoxy sealing resin 8 with an elastic modulus of 10 GPa or more for protection from outside.

Abstract: A highly sensitive charged particle measuring device capable of measuring low-level alpha rays comprises in a measurement chamber 7 provided with a sealable door 15, a test sample 2 and a semiconductor detector 1, a radiation measuring circuit 30 including a preamplifier 30c connected to the semiconductor detector 1, a linear amplifier 30d, and a pulse height analyzer 30e, a charged particle emission amount arithmetic unit 40 for performing the quantitative analysis of charged particles from its measurement, a display unit for displaying its analysis result, and further has an evacuation pipe line and a pure gas supply pipe line for performing supply and replacement of the pure gas in the measuring chamber 7.

Abstract: A semiconductor device in which a semiconductor chip 1 is bonded by a metal bond 2 to one surface of a heat sink 4 formed of a material with a thermal expansion coefficient is close to he semiconductor chip 1, the heat sink 4 is glued to a stiffener with a silicon adhesive 5 with an elastic modulus of 10 MPa or less, a TAB tape 9 is glued to the stiffener 3 with an epoxy adhesive 6, and the semiconductor chip 1 is sealed with an epoxy sealing resin 8 with an elastic modulus of 10 GPa or more for protection from outside.

Abstract: A highly sensitive charged particle measuring device capable of measuring low-level alpha rays comprises in a measurement chamber 7 provided with a sealable door 15, a test sample 2 and a semiconductor detector 1, a radiation measuring circuit 30 including a preamplifier 30c connected to the semiconductor detector 1, a linear amplifier 30d, and a pulse height analyzer 30e, a charged particle emission amount arithmetic unit 40 for performing the quantitative analysis of charged particles from its measurement, a display unit for displaying its analysis result, and further has an evacuation pipe line and a pure gas supply pipe line for performing supply and replacement of the pure gas in the measuring chamber 7.

Abstract: A semiconductor device in which a semiconductor chip 1 is bonded by a metal bond 2 to one surface of a heat sink 4 formed of a material with a thermal expansion coefficient is close to he semiconductor chip 1, the heat sink 4 is glued to a stiffener with a silicon adhesive 5 with an elastic modulus of 10 MPa or less, a TAB tape 9 is glued to the stiffener 3 with an epoxy adhesive 6, and the semiconductor chip 1 is sealed with an epoxy sealing resin 8 with an elastic modulus of 10 GPa or more for protection from outside.

Abstract: For preventing &agr;-rays induced soft errors in a semiconductor device in which solder bumps are connected with Cu wirings formed on Al wirings, bump lands connected with solder bumps and Cu wirings connected integrally therewith are constituted of a stacked film of a Cu film and an Ni film formed thereon, the thickness of the stacked film is larger than the thickness of the photosensitive polyimide resin film, the thickness of the inorganic passivation film, the thickness of the third Al wiring layer and the bonding pad and the thickness of the second interlayer insulative film formed below the Cu wirings and the bump land, that is, the bump land being constituted with such a thickness as larger than any of the thickness for the insulation material and the wiring material interposed between the MISFET (n-channel MISFET and p-channel MISFET) constituting the memory cell and the bump land.

Abstract: A semiconductor device in which a semiconductor chip 1 is bonded by a metal bond 2 to one surface of a heat sink 4 formed of a material with a thermal expansion coefficient is close to the semiconductor chip 1, the heat sink 4 is glued to a stiffener with a silicon adhesive 5 with an elastic modulus of 10 MPa or less, a TAB tape 9 is glued to the stiffener 3 with an epoxy adhesive 6, and the semiconductor chip 1 is sealed with an epoxy sealing resin 8 with an elastic modulus of 10 GPa or more for protection from outside.

Abstract: A semiconductor device in which a semiconductor chip 1 is bonded by a metal bond 2 to one surface of a heat sink 4 formed of a material with a thermal expansion coefficient is close to he semiconductor chip 1, the heat sink 4 is glued to a stiffener with a silicon adhesive 5 with an elastic modulus of 10 MPa or less, a TAB tape 9 is glued to the stiffener 3 with an epoxy adhesive 6, and the semiconductor chip 1 is sealed with an epoxy sealing resin 8 with an elastic modulus of 10 GPa or more for protection from outside.