Abstract: The present invention provides a thermal flow rate measurement device that is capable of highly accurate correction of the temperature of an intake gas flow rate using a two-dimensional correction map that stores a correction value in association with temperature and intake gas flow rate.

Abstract: The present invention is directed to a thermal flowmeter that prevents erroneous detection of backflow by suppressing circulation of air flow from a flow detection unit side to a back side or from the back side to the flow detection unit side and measures a gas flow rate with high accuracy. A thermal flowmeter of the present invention includes a bypass passage through which a gas to be measured passes; a dividing portion which divides the inside of the bypass passage into a first passage portion and a second passage portion; and a flow detection unit which is provided on a surface of the dividing portion on the first passage portion side and detects a flow rate of the gas to be measured.

Abstract: The present invention provides a thermal flow rate measurement device that is capable of highly accurate correction of the temperature of an intake gas flow rate using a two-dimensional correction map that stores a correction value in association with temperature and intake gas flow rate.

Abstract: The present invention is directed to a thermal flowmeter that prevents erroneous detection of backflow by suppressing circulation of air flow from a flow detection unit side to a back side or from the back side to the flow detection unit side and measures a gas flow rate with high accuracy. A thermal flowmeter of the present invention includes a bypass passage through which a gas to be measured passes; a dividing portion which divides the inside of the bypass passage into a first passage portion and a second passage portion; and a flow detection unit which is provided on a surface of the dividing portion on the first passage portion side and detects a flow rate of the gas to be measured.

Abstract: A semiconductor light-emitting device and a manufacturing method are provided, in which a metal film is deposited with positional differences between edges of an insulating film and the metal film, opposite a ridge waveguide top face, utilizing an overhanging-shaped resist pattern. An opening through the insulating film is extended in width without another masking step by etching the insulation film on the ridge waveguide top face, using the metal film as a mask. The contact area between a p-side electrode and a p-type contact layer is increased and operating voltage of the semiconductor light-emitting device is reduced.

Abstract: A nitride semiconductor device includes an n-type GaN substrate with a semiconductor device formed thereon and an n-type electrode which is a metal electrode formed on the rear surface of the GaN substrate. A surface modified layer and a reaction layer are interposed between the GaN substrate and n-type electrode. The surface modified layer serves as a carrier supplying layer, and is formed by causing the rear surface of the GaN substrate to react with a Si-containing plasma to be modified. The reaction layer is generated by partially removing a deposited material deposited on the surface modified layer by cleaning to generate a deposited layer and then causing Ti contained in a first metal layer and the deposited layer to partially react by heat treatment.

Abstract: A semiconductor laser device has a front surface electrode formed by Au plating, a rear surface electrode formed by Au plating, an anti-adhesive film on the front surface electrode or the rear surface electrode and made of a material that does not react with Au, and a coating film that covers an end face on a light emitting side and an end face opposite the light emitting side. The anti-adhesive films may be located at least at the four corners of the front or rear surface electrode.

Abstract: A flow rate sensor has a problem that a resistance value of a heat generating resistor itself varies and sensor characteristics are changed during use of the sensor for a long term. Also, the temperature of the heat generating resistor must be adjusted on a circuit substrate with a resistance constituting one side of a fixed temperature difference control circuit, and this has been one of factors pushing up the production cost. All resistances used for fixed temperature difference control are formed on the same substrate as temperature sensitive resistors of the same material. This enables all the resistances for the fixed temperature difference control to be exposed to the same environmental conditions. Hence, even when the resistances change over time, the changes over time occur substantially at the same tendency. Since the resistances for the fixed temperature difference control change over time essentially at the same rate, a resulting output error is very small.

Abstract: An etching system includes: a vacuum chamber; a stage for mounting a workpiece, the stage being disposed within the vacuum chamber; a first electrode located within the vacuum chamber and above the stage; a second located between the first electrode and a ceiling of the vacuum chamber; a gas supply for introducing a process gas into the vacuum chamber; a variable capacitance element connected to the second electrode; and a radio frequency power supply connected to the first electrode and connected through the variable capacitance element to the second electrode. The radio frequency power supply supplies radio frequency power to the first and second electrodes to produce an inductively coupled plasma in the process gas within the vacuum chamber.

Abstract: A thermal-type fluid flow sensor comprises a heating resistor formed on a thin film of a substrate, and plural thermal sensitive resistors configuring a bridge circuit. The thermal sensitive resistors are disposed on the thin film of the substrate so as to be located on an adjacent upstream side and an adjacent downstream side of the heating resistor in a stream direction of fluid to be measured. Resistor traces for the thermal sensitive resistors are formed so that the respective thermal sensitive resistors exhibit substantially equal changes in resistance with each other to distortion caused in the thin film.

Abstract: A method of forming a thin film including a first portion having a first film thickness and a second portion having a second film thickness thinner than the first film thickness. A thin film having the first film thickness is formed on a substrate, an interference waveform upon film formation from reflected light by irradiating with laser light is acquired, the second portion of the thin film is etched, an interference waveform upon etching is acquired by irradiating, with laser light, the second portion, and calculating an interference waveform upon target etching on condition that the second portion has the second film thickness, based on the interference waveform upon film formation. The etching is stopped when the interference waveform upon etching becomes the same as the interference waveform upon target etching.

Abstract: A flow rate sensor has a problem that a resistance value of a heat generating resistor itself varies and sensor characteristics are changed during use of the sensor for a long term. Also, the temperature of the heat generating resistor must be adjusted on a circuit substrate with a resistance constituting one side of a fixed temperature difference control circuit, and this has been one of factors pushing up the production cost. All resistances used for fixed temperature difference control are formed on the same substrate as temperature sensitive resistors of the same material. This enables all the resistances for the fixed temperature difference control to be exposed to the same environmental conditions. Hence, even when the resistances change over time, the changes over time occur substantially at the same tendency. Since the resistances for the fixed temperature difference control change over time essentially at the same rate, a resulting output error is very small.

Abstract: A thermal-type fluid flow sensor comprises a heating resistor formed on a thin film of a substrate, and plural thermal sensitive resistors configuring a bridge circuit. The thermal sensitive resistors are disposed on the thin film of the substrate so as to be located on an adjacent upstream side and an adjacent downstream side of the heating resistor in a stream direction of fluid to be measured. Resistor traces for the thermal sensitive resistors are formed so that the respective thermal sensitive resistors exhibit substantially equal changes in resistance with each other to distortion caused in the thin film.

Abstract: A semiconductor laser device has a front surface electrode formed by Au plating, a rear surface electrode formed by Au plating, an anti-adhesive film only on the front surface electrode and made of a material that does not react with Au, and a coating film that covers an end face on a light emitting side and an end face opposite the light emitting side. The anti-adhesive films are located on the four corners of the front surface electrode.

Abstract: A semiconductor laser device has a front surface electrode formed by Au plating, a rear surface electrode formed by Au plating, an anti-adhesive film on the front surface electrode or the rear surface electrode and made of a material that does not react with Au, and a coating film that covers an end face on a light emitting side and an end face opposite the light emitting side. The anti-adhesive films may be located at least at the four corners of the front or rear surface electrode.

Abstract: A thermal type flow measuring apparatus includes a heating resistor provided in a thin part of a substrate and a bridge circuit for driving the heating resistor to have a preset heating temperature, wherein resistor elements on sides forming the bridge circuit are temperature sensitive resistors, a part or whole of at least one of the temperature sensitive resistors is placed in the thin part and near the heating resistor so that the temperature sensitive resistor is influenced by a heat of the heating resistor, and the preset heating temperature is increased as the flow of fluid is increased. This configuration introduces flow dependency into the heating temperature of the heating resistor.

Abstract: A flow rate sensor has a problem that a resistance value of a heat generating resistor itself varies and sensor characteristics are changed during use of the sensor for a long term. Also, the temperature of the heat generating resistor must be adjusted on a circuit substrate with a resistance constituting one side of a fixed temperature difference control circuit, and this has been one of factors pushing up the production cost. All resistances used for fixed temperature difference control are formed on the same substrate as temperature sensitive resistors of the same material. This enables all the resistances for the fixed temperature difference control to be exposed to the same environmental conditions. Hence, even when the resistances change over time, the changes over time occur substantially at the same tendency. Since the resistances for the fixed temperature difference control change over time essentially at the same rate, a resulting output error is very small.

Abstract: A semiconductor laser diode comprises: an n-type GaAs substrate; and a first laser diode structure having a first n-type cladding layer, a first active layer including a quantum well layer, a first p-type cladding layer on the first active layer, a p-type signal layer on the first p-type cladding layer and which has the same constituent elements as those of the first p-type cladding layer, and a p-type ridge waveguide in a stripe mesa-like shape on the signal layer, which has the same constituent elements as those of the signal layer, and in which composition ratios of two constituent elements in a complementary relation of constituent elements are different from those composition ratios of the signal layer.

Abstract: A nitride semiconductor device includes an n-type GaN substrate with a semiconductor device formed thereon and an n-type electrode which is a metal electrode formed on the rear surface of the GaN substrate. A surface modified layer and a reaction layer are interposed between the GaN substrate and n-type electrode. The surface modified layer serves as a carrier supplying layer, and is formed by causing the rear surface of the GaN substrate to react with a Si-containing plasma to be modified. The reaction layer is generated by partially removing a deposited material deposited on the surface modified layer by cleaning to generate a deposited layer and then causing Ti contained in a first metal layer and the deposited layer to partially react by heat treatment.

Abstract: A thermal type flow rate measuring device can certainly prevent adhesion of water droplet onto a sensor element and thus achieve high reliability. The thermal type flow rate measuring device includes an auxiliary passage defined within a main passage for introducing a part of fluid flowing through the main passage, a sensor disposed within the auxiliary passage for detecting flow rate of the fluid and capturing means formed on an inner periphery of the auxiliary passage for capturing liquid contained in the fluid and transferring the captured liquid.