Patents by Inventor Junichi Horie

Junichi Horie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6892582
    Abstract: The object of the present invention is to propose an etch channel sealing structure characterized by excellent impermeability to moisture and resistance to temporal change of the diaphragm in the pressure sensor produced according to the sacrificial layer etching technique, and to provide a pressure sensor characterized by excellent productivity and durability. After a very small gap is formed by the sacrificial layer etching technique, silicon oxide film is deposited by the CVD technique or the like, thereby sealing the etch channel. Further, impermeable thin film of polysilicon or the like is formed to cover the oxide film. This allows an etch channel sealing structure to be simplified in the pressure sensor produced according to the sacrificial layer etching technique, and prevents entry of moisture into the cavity, thereby improving moisture resistance. Moreover, sealing material with small film stress reduces temporal deformation of the diaphragm.
    Type: Grant
    Filed: August 20, 1999
    Date of Patent: May 17, 2005
    Assignees: Hitachi, Ltd., Hitachi Car Engineering Co., Ltd.
    Inventors: Shinya Satou, Satoshi Shimada, Atsuo Watanabe, Yasuo Onose, Seiji Kuryu, Atsushi Miyazaki, Junichi Horie, Naohiro Momma
  • Patent number: 6889545
    Abstract: A flow rate sensor detects the flow rate in a pulsating condition including a large amount of the reverse flow. Upstream temperature sensors and downstream temperature sensors are formed in both sides of a heater, parallel resistors are formed in the external side of a thin film portion (cavity), and the downstream temperature sensors are connected at the contacts. The upstream and downstream temperature sensors are respectively allocated to the four sides of the bridge circuit so that the sensors of the same type are not side by side and the electrodes are balanced when the flow rate is zero. The upstream temperature sensor is cooled during the forward flow, while the downstream temperature sensor is influenced by the heater but virtual change is rather small and potential difference between the electrodes becomes larger. During the reverse flow, the downstream temperature sensor is cooled but virtual change is rather small.
    Type: Grant
    Filed: February 17, 2004
    Date of Patent: May 10, 2005
    Assignees: Hitachi, Ltd., Hitachi Car Engineering Co., Ltd.
    Inventors: Keiichi Nakada, Junichi Horie, Izumi Watanabe
  • Patent number: 6877383
    Abstract: By sealing a diaphragm with less processes and lower cost and reducing deformation due to remaining stress, a stable and highly reliable pressure sensor construction is proposed. The pressure sensor is low in measurement error and small in floating capacitance and leakage current and good in characteristic. As a means to attain the above object, a polycrystalline silicon diaphragm is sealed with a silicon oxide film deposited through a LPCVD method and then completely covered. The diaphragm is placed on a surface of a semiconductor substrate with a nearly constant gap of 0.15 to 1.3 ?m, and has difference-in-grade constructions of a deformation reducing means due to remaining stress.
    Type: Grant
    Filed: September 20, 2002
    Date of Patent: April 12, 2005
    Assignees: Hitachi, Ltd., Hitachi Car Engineering Co., Ltd.
    Inventors: Junichi Horie, Yasuo Onose, Norio Ichikawa, Seiji Kuryu, Satoshi Shimada, Akihiko Saito, Keiji Hanzawa, Masahiro Matsumoto, Hiroshi Moriya, Akio Yasukawa, Atsushi Miyazaki
  • Publication number: 20050050953
    Abstract: A gas flowmeter capable of reducing a secular change comprises a silicon semiconductor substrate formed with a cavity and a heat element formed above the cavity of the semiconductor substrate by way of an insulating film. The heat element is a silicon (Si) semiconductor thin film impurity-doped at high concentration. Stoichiometrically stable silicon nitride (Si3N4) thin films as barrier layers which less permeate and less absorb hydrogen in the heat generating temperature range of the heat element are formed above and below the silicon (Si) semiconductor thin film.
    Type: Application
    Filed: October 1, 2004
    Publication date: March 10, 2005
    Inventors: Masamichi Yamada, Junichi Horie, Izumi Watanabe, Keiichi Nakada
  • Patent number: 6851311
    Abstract: A flow measurement sensor accurately outputs signals even when pulsation flow is generated at high engine speed and also when pulsation flow accompanying reverse flow is generated. The flow measurement sensor has a flow measurement element which has a heater resistance pattern on one side of a plate-shaped member, and a bypass passage in which the flow measurement element is disposed, a first outlet through which fluid flowing along the surface of the flow measurement element flows out, and a second outlet through which fluid flowing along the back side of the flow measurement element flows out. The second outlet is positioned at a different location from the first outlet.
    Type: Grant
    Filed: March 27, 2002
    Date of Patent: February 8, 2005
    Assignees: Hitachi, Ltd., Hitachi Car Engineering Co., Ltd.
    Inventors: Keiichi Nakada, Izumi Watanabe, Junichi Horie, Kei Ueda
  • Publication number: 20040211253
    Abstract: A thermal type flow measuring device comprises a heating resistor(HF), a temperature measuring resistor(Ru) upstream of the heating resistor(HF) with respect to a fluid(Q), and a temperature measuring resistor(Rd) downstream of the heating resistor(HF). A heat sensitive resistance element(CF), the upstream temperature measuring resistor(Ru) and the downstream temperature measuring resistor(Rd) form a first bridge circuit, and this first bridge circuit and the heating resistor(HF) form a second bridge circuit. Feedback control means(OP1, Tr) heat the heating resistor(HF) in accordance with an output for keeping a balance of the second bridge circuit.
    Type: Application
    Filed: February 11, 2004
    Publication date: October 28, 2004
    Inventors: Junichi Horie, Izumi Watanabe, Shinya Igarashi, Keiichi Nakada, Kei Ueyama
  • Publication number: 20040190576
    Abstract: A low reflective film is formed of, in sequence from a side in contact with a laser chip, a first dielectric film of a refractive index n1 and a thickness d1, a second dielectric film of a refractive index n2 and a thickness d2, a third dielectric film of a refractive index n3 and a thickness d3, and a fourth dielectric film of a refractive index n4 and a thickness d4, specifically, aluminum oxide Al2O3 with a refractive index n1=1.638 is used for the first dielectric film, silicon oxide SiO2 with a refractive index n2=n4=1.489 for the second and fourth dielectric films, tantalum oxide Ta2O5 with a refractive index n3=2.063 for the third dielectric film, respectively, resulting in a semiconductor laser device with a reflectance which is stably controllable.
    Type: Application
    Filed: March 4, 2004
    Publication date: September 30, 2004
    Applicant: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Hiromasu Matsuoka, Yasuhiro Kunitsugu, Harumi Nishiguchi, Tetsuya Yagi, Yasuyuki Nakagawa, Junichi Horie
  • Publication number: 20040163464
    Abstract: A flow rate sensor for detecting, with higher accuracy, the flow rate in a pulsating condition including a large amount of the reverse flow. Upstream temperature sensors and downstream temperature sensors are formed in both sides of a heater, parallel resistors are formed in the external side of a thin film portion (cavity), and the downstream temperature sensors are connected at the contacts. The upstream and downstream temperature sensors are respectively allocated to the four sides of the bridge circuit in the manner that the sensors of the same type are never provided side by side and the electrodes are balanced when the flow rate is zero. The upstream temperature sensor is cooled during the forward flow, while the downstream temperature sensor is influenced by the heater but virtual change is rather small and potential difference between the electrodes becomes larger. During the reverse flow, the downstream temperature sensor is cooled but virtual change is rather small.
    Type: Application
    Filed: February 17, 2004
    Publication date: August 26, 2004
    Inventors: Keiichi Nakada, Junichi Horie, Izumi Watanabe
  • Publication number: 20040069061
    Abstract: A flow rate sensor has a problem that a resistance value of a heat generating resistor itself varies and sensor characteristics are changed during use of the sensor for a long term. Also, the temperature of the heat generating resistor must be adjusted on a circuit substrate with a resistance constituting one side of a fixed temperature difference control circuit, and this has been one of factors pushing up the production cost. All resistances used for fixed temperature difference control are formed on the same substrate as temperature sensitive resistors of the same material. This enables all the resistances for the fixed temperature difference control to be exposed to the same environmental conditions. Hence, even when the resistances change over time, the changes over time occur substantially at the same tendency. Since the resistances for the fixed temperature difference control change over time essentially at the same rate, a resulting output error is very small.
    Type: Application
    Filed: June 2, 2003
    Publication date: April 15, 2004
    Inventors: Izumi Watanabe, Junichi Horie, Keiichi Nakada, Kei Ueyama, Masamichi Yamada
  • Patent number: 6694810
    Abstract: A support member where a flow amount detection element, which includes a heating resistor and electronic circuit parts for obtaining the air flow amount according to the flow amount signal detected by flow amount detection element are mounted, is cooled from both the direction of the main flow of main passage and the direction of an anti-main flow (i.e., the direction opposite to the direction of the main flow).
    Type: Grant
    Filed: July 25, 2002
    Date of Patent: February 24, 2004
    Assignees: Hitachi, Ltd., Hitachi Car Engineering Co., Ltd.
    Inventors: Kei Ueyama, Izumi Watanabe, Keiichi Nakada, Junichi Horie
  • Patent number: 6640642
    Abstract: A pressure sensor of electric capacitance type which includes a plurality of pressure sensor units connected in parallel with one another and each formed on a substrate by an electrode, a cavity region and a diaphragm having an electrically conductive film which is disposed in opposition to the electrode with the cavity region intervening between the electrode and the diaphragm, wherein diaphragm fixing portions are disposed internally of the cavity region so that a single sheet of the diaphragm is partitionarily and regionally allotted to regions of the plural pressure sensor units, respectively. With this structure of the capacitance-type pressure sensor, ineffective region for capacitance detection is minimized and hence the parasitic capacitance can be reduced with the detection accuracy of the sensor being improved.
    Type: Grant
    Filed: September 1, 2000
    Date of Patent: November 4, 2003
    Assignee: Hitachi, Ltd.
    Inventors: Yasuo Onose, Atsuo Watanabe, Seiji Kuryu, Shinya Satou, Junichi Horie, Satoshi Shimada
  • Publication number: 20030183000
    Abstract: A gas flowmeter capable of reducing a secular change comprises a silicon semiconductor substrate formed with a cavity and a heat element formed above the cavity of the semiconductor substrate by way of an insulating film. The heat element is a silicon (Si) semiconductor thin film impurity-doped at high concentration. Stoichiometrically stable silicon nitride (Si3N4) thin films as barrier layers which less permeate and less absorb hydrogen in the heat generating temperature range of the heat element are formed above and below the silicon (Si) semiconductor thin film.
    Type: Application
    Filed: September 18, 2002
    Publication date: October 2, 2003
    Applicant: Hitachi, Ltd. and Hitachi Car Engineering Co., Ltd
    Inventors: Masamichi Yamada, Junichi Horie, Izumi Watanabe, Keiichi Nakada
  • Publication number: 20030110854
    Abstract: To provide a flow measurement sensor which accurately outputs signals even when pulsation flow is generated at high engine speed and also when pulsation flow accompanying reverse flow is generated. In a flow measurement sensor comprising a flow measurement element which has a heater resistance pattern on one side of a plate-shaped member, and a bypass passage in which the flow measurement element is disposed, a first outlet through which fluid flowing along the surface of said flow measurement element flows out, and a second outlet through which fluid flowing along the back side of said flow measurement element flows out are provided, and said second outlet is positioned at a different location from said first outlet.
    Type: Application
    Filed: March 27, 2002
    Publication date: June 19, 2003
    Applicant: Hitachi, Ltd.
    Inventors: Keiichi Nakada, Izumi Watanabe, Junichi Horie, Kei Ueda
  • Patent number: 6571621
    Abstract: A thermal type flow rate measuring device can certainly prevent adhesion of water droplet onto a sensor element and thus achieve high reliability. The thermal type flow rate measuring device includes an auxiliary passage defined within a main passage for introducing a part of fluid flowing through the main passage, a sensor disposed within the auxiliary passage for detecting flow rate of the fluid and capturing means formed on an inner periphery of the auxiliary passage for capturing liquid contained in the fluid and transferring the captured liquid.
    Type: Grant
    Filed: September 14, 2001
    Date of Patent: June 3, 2003
    Assignees: Hitachi, Ltd., Hitachi Car Engineering Co., Ltd.
    Inventors: Izumi Watanabe, Junichi Horie, Keiichi Nakada, Kei Ueyama
  • Patent number: 6564643
    Abstract: A high-accuracy high-stability capacitor type pressure sensor which eliminates a parasitic capacitance between a reference capacitor and a semiconductor substrate. A capacitor type pressure sensor comprising, on a semiconductor substrate 10, an active capacitor 100 whose capacitance varies as the surrounding pressure varies, a reference capacitor 200 whose capacitance will not vary substantially as the surrounding pressure varies, and a circuit which is electrically connected to both said active and reference capacitors 100 and 200, detects the difference or ratio thereof, and uses the potential of a semiconductor substrate, wherein an electrode 30a of said reference capacitor is formed on the semiconductor substrate 10 with a dielectric 20 therebetween.
    Type: Grant
    Filed: April 12, 2001
    Date of Patent: May 20, 2003
    Assignees: Hitachi, Ltd., Hitachi Car Engineering Co., Ltd.
    Inventors: Junichi Horie, Atsushi Miyazaki, Satoshi Shimada, Akihiko Saitou, Yasuo Onose, Norio Ichikawa, Keiji Hanzawa
  • Publication number: 20030046996
    Abstract: There is provided a flow rate measuring device which comprises a means for introducing a backward flow of the main passage into the sub-passage through the outlet of the sub-passage of the flow rate measuring device is provided near the outlet of the sub-passage, in order to keep the flow rate measuring element from being destroyed under the presence of dust and water in an intake manifold and which has high reliability for a long period of use and an excellent pulsation characteristic.
    Type: Application
    Filed: February 27, 2002
    Publication date: March 13, 2003
    Applicant: HITACHI, LTD.
    Inventors: Keiichi Nakada, Izumi Watanabe, Junichi Horie, Kei Ueyama, Hiromu Kikawa, Masamichi Yamada
  • Publication number: 20030019299
    Abstract: By sealing a diaphragm with less processes and lower cost and reducing deformation due to remaining stress, a stable and highly reliable pressure sensor construction is proposed. The pressure sensor is low in measurement error and small in floating capacitance and leakage current and good in characteristic. As a means to attain the above object, a polycrystalline silicon diaphragm is sealed with a silicon oxide film deposited through a LPCVD method and then completely covered. The diaphragm is placed on a surface of a semiconductor substrate with a nearly constant gap of 0.15 to 1.3 &mgr;m, and has difference-in-grade constructions of a deformation reducing means due to remaining stress.
    Type: Application
    Filed: September 20, 2002
    Publication date: January 30, 2003
    Applicant: HITACHI, LTD.
    Inventors: Junichi Horie, Yasuo Onose, Norio Ichikawa, Seiji Kuryu, Satoshi Shimada, Akihiko Saito, Keiji Hanzawa, Masahiro Matsumoto, Hiroshi Moriya, Akio Yasukawa, Atsushi Miyazaki
  • Publication number: 20030019289
    Abstract: Support member 7 where flow amount detection element 9 including a heating resistor and electronic circuit parts 8 for obtaining the air flow amount according to the flow amount signal detected by flow amount detection element 9 are mounted is cooled from both the direction of the main flow of main passage 2 and the direction of an anti-main flow (the opposite direction to the direction of the main flow).
    Type: Application
    Filed: July 25, 2002
    Publication date: January 30, 2003
    Applicant: Hitachi Ltd.
    Inventors: Kei Ueyama, Izumi Watanabe, Keiichi Nakada, Junichi Horie
  • Publication number: 20020157475
    Abstract: A sensor with built-in circuits can be improved in the stability of the operation or characteristics. A circuit region and a sensor region are covered by a passivation film. The sensor region is partially covered by the passivation film. The sensor region and circuit region are protected by the passivation film, and an effect of the passivation film on the mechanical displacement of a diaphragm portion can be alleviated so that the sensor with built-in circuits may be improved in the stability of the operation or characteristics.
    Type: Application
    Filed: June 19, 2002
    Publication date: October 31, 2002
    Applicant: Hitachi, Ltd.
    Inventors: Yasuo Onose, Junichi Horie, Seiji Kuryu, Akihiko Saito, Norio Ichikawa, Atsuo Watanabe, Satoshi Shimada
  • Publication number: 20020116995
    Abstract: A thermal type flow rate measuring device can certainly prevent adhesion of water droplet onto a sensor element and thus achieve high reliability. The thermal type flow rate measuring device includes an auxiliary passage defined within a main passage for introducing a part of fluid flowing through the main passage, a sensor disposed within the auxiliary passage for detecting flow rate of the fluid and capturing means formed on an inner periphery of the auxiliary passage for capturing liquid contained in the fluid and transferring the captured liquid.
    Type: Application
    Filed: September 14, 2001
    Publication date: August 29, 2002
    Applicant: Hitachi, Ltd.
    Inventors: Izumi Watanabe, Junichi Horie, Keiichi Nakada, Kei Ueyama