Patents by Inventor Junichi Konishi
Junichi Konishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11662436Abstract: A movable device includes a light deflector including a movable part rotatable about a predetermined axis; a mount including a pair of stationary parts to which the light deflector is secured; and a substrate attached to an opposite side of a light-deflector side of the mount. The substrate has a through hole between the pair of the stationary parts.Type: GrantFiled: October 30, 2020Date of Patent: May 30, 2023Assignee: RICOH COMPANY, LTD.Inventor: Junichi Konishi
-
Publication number: 20210396994Abstract: A light deflector includes a movable device; a drive unit configured to drive the movable device; an input wiring board configured to apply electric power from the drive unit to the movable device; and an anisotropic conductive resin film through which the input wiring board is connected to an input part. The movable device includes a movable portion including a reflector, between a pair of drive beams; a pair of supporting parts supporting the pair of drive beams; and a mount unit secured to the pair of supporting parts. The pair of drive beams supports the movable portion to allow the movable portion to oscillate around an oscillation axis. Each of the pair of drive beams includes a beam member and an actuator. At least one of the pair of supporting parts includes the input part to which electric power is input from the input wiring board to the actuator.Type: ApplicationFiled: June 17, 2021Publication date: December 23, 2021Applicant: Ricoh Company, Ltd.Inventors: Tetsumaru Fujita, Masayuki Fujishima, Junichi Konishi, Hidenori Kato
-
Publication number: 20210395073Abstract: A movable device includes a movable portion including a reflecting surface; a pair of drive beams to support the movable portion rotatably around a predetermined rotation axis with the movable portion disposed between the pair of drive beams; and a support portion configured to support the pair of drive beams. The support portion has a light passing portion on each of both sides of the movable portion in a direction intersecting with the rotation axis in a plane along the reflecting surface in a state in which the movable portion is not rotated, the light passing portion allowing light reflected by the reflecting surface to pass through the light passing portion.Type: ApplicationFiled: November 1, 2019Publication date: December 23, 2021Applicant: Ricoh Company, Ltd.Inventors: Masayuki FUJISHIMA, Junichi KONISHI, Tsuyoshi UENO, Nobunari TSUKAMOTO
-
Publication number: 20210149025Abstract: A movable device includes a light deflector including a movable part rotatable about a predetermined axis; a mount including a pair of stationary parts to which the light deflector is secured; and a substrate attached to an opposite side of a light-deflector side of the mount. The substrate has a through hole between the pair of the stationary parts.Type: ApplicationFiled: October 30, 2020Publication date: May 20, 2021Inventor: Junichi KONISHI
-
Patent number: 8827004Abstract: A power tool includes a motor, a housing that accommodates the motor, a switch that supplies power to the motor, a switch lever that is provided movable relative to the housing to selectively turn ON and OFF the switch, and an off-lock member that is provided movable relative to the switch lever. The off-lock member includes a first engaging part and a second engaging part that are engageable with the housing.Type: GrantFiled: February 11, 2011Date of Patent: September 9, 2014Assignee: Hitachi Koki Co., Ltd.Inventors: Nobuhito Hosokawa, Junichi Konishi, Kazumi Tanaka, Yuuki Takeda
-
Patent number: 8716874Abstract: A semiconductor device that is resin-sealed in a wafer level after a rewiring layer forming process and a metal post forming process forming a metal post are performed on a semiconductor substrate of the semiconductor device includes devices formed on the semiconductor substrate. Further all of the devices are disposed in respective positions other than positions overlapping a peripheral border of the metal post when viewed from a top of the semiconductor substrate.Type: GrantFiled: September 9, 2011Date of Patent: May 6, 2014Assignee: Ricoh Company, Ltd.Inventors: Junichi Konishi, Naohiro Ueda
-
Patent number: 8558831Abstract: Disclosed is a method for drawing a distribution area of data points on a coordinate plane. The method includes a step in which a data point is selected as a first representative point; a step in which the data point corresponding to a direction in which a minimum angle is formed with respect to a first direction in a rotation direction is selected as a second representative point; a step in which the data point corresponding to a direction in which a minimum angle is formed with respect to a next direction in the rotation direction is selected as a next representative point, the step repeatedly selecting the next representative point; and a step in which the representative points are connected by a line to draw a distribution area indication line.Type: GrantFiled: April 8, 2011Date of Patent: October 15, 2013Assignee: Ricoh Company, Ltd.Inventors: Hirokazu Yanai, Junichi Konishi
-
Publication number: 20120061828Abstract: A semiconductor device that is resin-sealed in a wafer level after a rewiring layer forming process and a metal post forming process forming a metal post are performed on a semiconductor substrate of the semiconductor device includes devices formed on the semiconductor substrate. Further all of the devices are disposed in respective positions other than positions overlapping a peripheral border of the metal post when viewed from a top of the semiconductor substrate.Type: ApplicationFiled: September 9, 2011Publication date: March 15, 2012Applicant: RICOH COMPANY, LTD.Inventors: Junichi KONISHI, Naohiro Ueda
-
Publication number: 20110249031Abstract: Disclosed is a method for drawing a distribution area of data points on a coordinate plane. The method includes a step in which a data point is selected as a first representative point; a step in which the data point corresponding to a direction in which a minimum angle is formed with respect to a first direction in a rotation direction is selected as a second representative point; a step in which the data point corresponding to a direction in which a minimum angle is formed with respect to a next direction in the rotation direction is selected as a next representative point, the step repeatedly selecting the next representative point; and a step in which the representative points are connected by a line to draw a distribution area indication line.Type: ApplicationFiled: April 8, 2011Publication date: October 13, 2011Applicant: RICOH COMPANY, LTD.Inventors: Hirokazu YANAI, Junichi Konishi
-
Publication number: 20110203826Abstract: A power tool includes a motor, a housing that accommodates the motor, a switch that supplies power to the motor, a switch lever that is provided movable relative to the housing to selectively turn ON and OFF the switch, and an off-lock member that is provided movable relative to the switch lever. The off-lock member includes a first engaging part and a second engaging part that are engageable with the housing.Type: ApplicationFiled: February 11, 2011Publication date: August 25, 2011Applicant: Hitachi Koki Co., Ltd.Inventors: Nobuhito Hosokawa, Junichi Konishi, Kazumi Tanaka, Yuuki Takeda
-
Patent number: 7026206Abstract: A semiconductor apparatus includes a MOS transistor and a resistive element having insulative first polysilicon and conductive second polysilicon films, an insulating film for a resistive element, and a third polysilicon film. The second polysilicon film is formed in a region adjacent each side edge of the first polysilicon film, and has a contact hole formed therein. The third polysilicon film determines a resistance value of the resistive element, and is continuously formed on the second polysilicon film and the insulating film formed on the first polysilicon film. The MOS transistor is formed in an active region surrounded by the field insulating film, and includes a gate oxide film and a gate electrode including a polysilicon film formed as a lower layer with the second polysilicon film and a polysilicon film formed as an upper layer with the third polysilicon film. A method of making this semiconductor apparatus is also described.Type: GrantFiled: May 12, 2004Date of Patent: April 11, 2006Assignee: Ricoh Company, Ltd.Inventor: Junichi Konishi
-
Publication number: 20040209419Abstract: A semiconductor apparatus includes a MOS transistor and a resistive element having insulative first polysilicon and conductive second polysilicon films, an insulating film for a resistive element, and a third polysilicon film. The second polysilicon film is formed in a region adjacent each side edge of the first polysilicon film, and has a contact hole formed therein. The third polysilicon film determines a resistance value of the resistive element, and is continuously formed on the second polysilicon film and the insulating film formed on the first polysilicon film. The MOS transistor is formed in an active region surrounded by the field insulating film, and includes a gate oxide film and a gate electrode including a polysilicon film formed as a lower layer with the second polysilicon film and a polysilicon film formed as an upper layer with the third polysilicon film. A method of making this semiconductor apparatus is also described.Type: ApplicationFiled: May 12, 2004Publication date: October 21, 2004Applicant: Ricoh Company, Ltd.Inventor: Junichi Konishi
-
Patent number: 6765281Abstract: A semiconductor apparatus includes a MOS transistor and a resistive element having insulative first polysilicon and conductive second polysilicon films, an insulating film for a resistive element, and a third polysilicon film. The second polysilicon film is formed in a region adjacent each side edge of the first polysilicon film, and has a contact hole formed therein. The third polysilicon film determines a resistance value of the resistive element, and is continuously formed on the second polysilicon film and the insulating film formed on the first polysilicon film. The MOS transistor is formed in an active region surrounded by the field insulating film, and includes a gate oxide film and a gate electrode including a polysilicon film formed as a lower layer with the second polysilicon film and a polysilicon film formed as an upper layer with the third polysilicon film. A method of making this semiconductor apparatus is also described.Type: GrantFiled: November 27, 2002Date of Patent: July 20, 2004Assignee: Ricoh Company, Ltd.Inventor: Junichi Konishi
-
Publication number: 20040099930Abstract: A semiconductor apparatus includes a MOS transistor and a resistive element having insulative first polysilicon and conductive second polysilicon films, an insulating film for a resistive element, and a third polysilicon film. The second polysilicon film is formed in a region adjacent each side edge of the first polysilicon film, and has a contact hole formed therein. The third polysilicon film determines a resistance value of the resistive element, and is continuously formed on the second polysilicon film and the insulating film formed on the first polysilicon film. The MOS transistor is formed in an active region surrounded by the field insulating film, and includes a gate oxide film and a gate electrode including a polysilicon film formed as a lower layer with the second polysilicon film and a polysilicon film formed as an upper layer with the third polysilicon film. A method of making this semiconductor apparatus is also described.Type: ApplicationFiled: November 27, 2002Publication date: May 27, 2004Applicant: Ricoh Company, Ltd.Inventor: Junichi Konishi
-
Patent number: 5931039Abstract: An electric cutting and bending tool that transfers the rotation of an electric motor to an output shaft after slowing the rotation through a gear train. An eccentric cam is provided integrally with the output shaft and drives against a pivot plate. The pivot shaft has one end provided with a cam roller in rolling contact with the cam, another end provided with a movable blade and an intermediate portion provided with a pivot pin. A bending roller is provided on the cam to bend a reinforcing rod about a center pin to a desired angle between 0-180.degree..Type: GrantFiled: April 7, 1997Date of Patent: August 3, 1999Assignee: Hitachi Koki Co., Ltd.Inventors: Chikai Yoshimizu, Kihatirou Matsumoto, Junichi Konishi, Hiroyuki Oda, Nobuaki Hatanaka
-
Patent number: 5310446Abstract: A method for producing a semiconductor film comprising steps of: preparing a first substrate and a second substrate; superposing the first substrate on the second substrate to form an assembly of combined substrates; applying energy to the assembly of combined substrates to melt a portion within the assembly to form a molten portion therein; cooling the molten portion to crystallize the portion to form a single crystal structure therein; and separating the first substrate from the second substrate. The method makes it possible to control the crystal axis orientation of the recrystallized single crystal structure.Type: GrantFiled: July 13, 1992Date of Patent: May 10, 1994Assignee: Ricoh Company, Ltd.Inventors: Junichi Konishi, Kouichi Maari, Toshihiko Taneda, Akiko Kishimoto
-
Patent number: 5073815Abstract: A semiconductor substrate that comprises: a base plate member made from a dielectric material; a refractory metal film covering at least a part of the base plate member; a single crystal semiconductor film formed on the refractory metal film; and an impurities-diffusion layer formed in said single crystal semiconductor film in a side contacting with the refractory metla film. The diffusion layer has a density grade gradually decreasing toward a direction away from the refractory metal film so that this impurities-diffusion layer comes in ohmic contact with the refractory metal film.Type: GrantFiled: August 21, 1990Date of Patent: December 17, 1991Assignee: Ricoh Company, Ltd.Inventors: Daisuke Kosaka, Junichi Konishi
-
Patent number: 4992393Abstract: A method for producing a semiconductor thin film by melt and recrystallization process. At least one recess is formed in a stacked layered structure including a semiconductor thin film layer. The recess has an arrow head shape seen from a surface side of the layered structure. The apex of the arrow head shape is oriented to a forward direction on a scanning line. The surface of the layered structure is covered with a cooling medium so that the recess is filled with the cooling medium. An energy beam is irradiated to the layered structure through the cooling medium to scan the structure along the scanning line so as to melt the semiconductor thin film and after that the semiconductor is cooled and recrystallized to form a single crystal structure therein.Type: GrantFiled: May 25, 1990Date of Patent: February 12, 1991Assignee: Ricoh Company, Ltd.Inventors: Daisuke Kosaka, Junichi Konishi