Abstract: According to an aspect of the invention, an imaging apparatus includes: a focus detection unit configured to execute focus detection based on a phase difference between image signals obtained through photoelectric conversion of a light flux passing through different pupil partial regions of an imaging optical system; a first image blur compensation unit configured to compensate for image blur; a second image blur compensation unit configured to compensate for image blur; and a control unit that controls driving of the first image blur compensation unit and the second image blur compensation unit. The control unit controls a driving amount of the first image blur compensation unit and a driving amount of the second image blur compensation unit such that a change in vignetting occurring in the light flux passing through the imaging optical system is equal to or less than a predetermined value during a period in which the focus detection unit executes the focus detection.

Abstract: An image sensor comprising a pixel portion that is constituted by a plurality of pixels, and includes a first pixel group and a second pixel group, wherein each of the pixels included in the first pixel group and the second pixel group includes: a plurality of photoelectric conversion portions; and a plurality of transfer gates that respectively correspond to the photoelectric conversion portions, and have transfer gate electrodes covering same partial regions in the photoelectric conversion portions, and an average position of barycenters of respective light receivable regions of the photoelectric conversion portions included in each pixel of the first pixel group and an average position of barycenters of respective light receivable regions of the photoelectric conversion portions included in each pixel of the second pixel group are at positions different from each other in the pixels.

Abstract: A semiconductor device may include a semiconductor substrate provided with an IGBT range and a diode range. The semiconductor substrate may include n-type emitter regions provided in the IGBT range, a p-type body region provided in the IGBT range, a p-type anode region provided in the diode range and an n-type drift region provided across the IGBT range and the diode range. The drift region in a border inter-trench semiconductor region which is located closest to the diode range may include a high concentration layer.

Abstract: An image sensor comprising a pixel portion that is constituted by a plurality of pixels, and includes a first pixel group and a second pixel group, wherein each of the pixels included in the first pixel group and the second pixel group includes: a plurality of photoelectric conversion portions; and a plurality of transfer gates that respectively correspond to the photoelectric conversion portions, and have transfer gate electrodes covering same partial regions in the photoelectric conversion portions, and an average position of barycenters of respective light receivable regions of the photoelectric conversion portions included in each pixel of the first pixel group and an average position of barycenters of respective light receivable regions of the photoelectric conversion portions included in each pixel of the second pixel group are at positions different from each other in the pixels.

Abstract: An image capturing apparatus includes: a focus detection unit configured to perform focus detection based on a phase difference between a plurality of image signals obtained by photo-electrically converting light beams that respectively pass through different partial pupil regions of an imaging optical system; an image blur correction unit configured to correct image blur of an object image by driving an optical member for image blur correction; and a determination unit configured to determine reliability of a focus detection result detected by the focus detection unit based on information regarding a focus detection area with respect to which the focus detection unit performs focus detection, and information regarding vignetting that occurs in light beams that pass through the imaging optical system as a result of the image blur correction unit correcting the image blur.

Abstract: The imaging device includes a first pixel group and a second pixel group that include a plurality of pixels each having a plurality of photoelectric conversion portions that are separated by an isolation portion and arranged in a first direction and a plurality of transfer gates that transfer charges of the plurality of photoelectric conversion portions. A position of at least a part of the isolation portion within each of the pixels of the first pixel group and a position of at least a part of the isolation portion within each of the pixels of the second pixel group are shifted relative to each other in the first direction. Respective widths of portions where the plurality of separated photoelectric conversion portions overlap with the plurality of transfer gates in a planar view are the same.

Abstract: According to an aspect of the invention, an imaging apparatus includes: a focus detection unit configured to execute focus detection based on a phase difference between image signals obtained through photoelectric conversion of a light flux passing through different pupil partial regions of an imaging optical system; a first image blur compensation unit configured to compensate for image blur; a second image blur compensation unit configured to compensate for image blur; and a control unit that controls driving of the first image blur compensation unit and the second image blur compensation unit. The control unit controls a driving amount of the first image blur compensation unit and a driving amount of the second image blur compensation unit such that a change in vignetting occurring in the light flux passing through the imaging optical system is equal to or less than a predetermined value during a period in which the focus detection unit executes the focus detection.

Abstract: According to an aspect of the invention, an imaging apparatus includes: a focal point detection unit configured to perform focal point detection on the basis of a phase difference between a plurality of image signals obtained by photoelectric conversion of light fluxes each passing through different pupil partial regions of an imaging optical system; an image blur compensation unit configured to compensate for image blur; and a control unit configured to set a position at which a vignetting amount occurring in a light flux passing through the imaging optical system is equal to or less than a predetermined value during a period in which the focal point detection is performed by the focal point detection unit as a center position of a driving amplitude to perform drive control of the image blur compensation unit.

Abstract: A recording apparatus discharges both high-permeability black ink and low-permeability black ink to a boundary between a color area and a black area.

Abstract: The imaging device includes a first pixel group and a second pixel group that include a plurality of pixels each having a plurality of photoelectric conversion portions that are separated by an isolation portion and arranged in a first direction and a plurality of transfer gates that transfer charges of the plurality of photoelectric conversion portions. A position of at least a part of the isolation portion within each of the pixels of the first pixel group and a position of at least a part of the isolation portion within each of the pixels of the second pixel group are shifted relative to each other in the first direction. Respective widths of portions where the plurality of separated photoelectric conversion portions overlap with the plurality of transfer gates in a planar view are the same.

Abstract: A sensor chip includes sensor pads, and the first set of differential detection signal pads are symmetrically arranged on both sides of a ground pad and are centered at the ground pad, the second set of differential detection signal pads are arranged on both sides thereof, and a power supply pad is arranged in one end of the two ends of the sensor pads. A processing circuit chip includes sensor connection pads including power supply connection pads, a ground connection pad, and two sets of differential detection signal connection pads, and the power supply connection pads connectable to the power supply pad of the sensor chip are arranged in two ends of the sensor connection pads.

Abstract: The imaging device includes a first pixel group and a second pixel group that include a plurality of pixels each having a plurality of photoelectric conversion portions that are separated by an isolation portion and arranged in a first direction and a plurality of transfer gates that transfer charges of the plurality of photoelectric conversion portions. A position of at least a part of the isolation portion within each of the pixels of the first pixel group and a position of at least a part of the isolation portion within each of the pixels of the second pixel group are shifted relative to each other in the first direction. Respective widths of portions where the plurality of separated photoelectric conversion portions overlap with the plurality of transfer gates in a planar view are the same.

Abstract: A recording apparatus discharges both high-permeability black ink and low-permeability black ink to a boundary between a color area and a black area.

Abstract: The imaging device includes a first pixel group and a second pixel group that include a plurality of pixels each having a plurality of photoelectric conversion portions that are separated by an isolation portion and arranged in a first direction and a plurality of transfer gates that transfer charges of the plurality of photoelectric conversion portions. A position of at least a part of the isolation portion within each of the pixels of the first pixel group and a position of at least a part of the isolation portion within each of the pixels of the second pixel group are shifted relative to each other in the first direction. Respective widths of portions where the plurality of separated photoelectric conversion portions overlap with the plurality of transfer gates in a planar view are the same.

Abstract: An image sensor comprising a pixel portion that is constituted by a plurality of pixels, and includes a first pixel group and a second pixel group, wherein each of the pixels included in the first pixel group and the second pixel group includes: a plurality of photoelectric conversion portions; and a plurality of transfer gates that respectively correspond to the photoelectric conversion portions, and have transfer gate electrodes covering same partial regions in the photoelectric conversion portions, and an average position of barycenters of respective light receivable regions of the photoelectric conversion portions included in each pixel of the first pixel group and an average position of barycenters of respective light receivable regions of the photoelectric conversion portions included in each pixel of the second pixel group are at positions different from each other in the pixels.

Abstract: A method of producing barium titanate that includes making a slurry by dispersing barium titanate powder in a solvent such as ethanol. Then, in a high-pressure vessel, substituting supercritical fluid including carbon dioxide gas, for example, for the solvent in the slurry. Then, separating the barium titanate powder from the supercritical fluid by gasifying the supercritical fluid. Then, performing a heat treatment on the separated barium titanate powders to produce the barium titanate.

Abstract: In order to prevent the ingress of moisture into a void section of a component main body of a ceramic electronic component, at least the component main body of the ceramic electronic component is provided with water repellency using a water repellent agent. The water repellent agent is dissolved in a supercritical fluid such as, a supercritical CO2 fluid, as a solvent to provide at least the component main body with water repellency. After providing the water repellency, the water repellent agent on the outer surface of the component main body is removed. As the water repellent agent, a silane coupling agent may be used.

Abstract: An image capture apparatus and control method thereof that improve focus detection accuracy in scenes that have low luminance, contrast, and the like is disclosed. The image capture apparatus has a focus detection mode suited to scenes that have low luminance, contrast, and the like. In this focus detection mode, the focus detection is carried out on the basis of a frequency component extracted from an image signal to which a coefficient for correcting intensity differences between color components is not applied, or to which a coefficient having a lower difference among color components than the computed coefficient has been applied.

Abstract: An imaging apparatus includes an imaging plane phase-difference type first focus detecting unit and a contrast type second focus detecting unit. A saturation detecting unit detects saturation of focus detecting pixels or imaging pixels provided in an imaging element. A brightness detecting unit detects the brightness of an object. If the number of pixels detected by the saturation detecting unit exceeds a predetermined value or the brightness of an object detected by the brightness detecting unit is less than a predetermined value, a CPU controls a focus adjustment operation only using a first detection amount. Alternatively, the CPU controls a focus adjustment operation based on the result obtained by weighting processing of a first detection amount and a second detection amount in response to an increase in the number of pixels of which saturation of the outputs has been detected or a decrease in the brightness of an object.

Abstract: A semiconductor integrated circuit device is configured such that if, due to an erroneous connection or the like, an abnormal state is entered in which an output voltage is lower than a ground potential VSS, an N-type DMOS transistor and a first P-type MOS transistor are turned off and a voltage is applied to their parasitic diodes in the opposite direction, preventing a current from flowing. In a normal state in which the output voltage is higher than the ground potential, at least one of the N-type DMOS transistor and first P-type MOS transistor, which are connected in parallel, is turned on, preventing a current from flowing into the parasitic diode of the N-type DMOS transistor.