Abstract: A method of manufacturing a semiconductor device sealed in a cured silicone body by placing an unsealed semiconductor device into a mold and subjecting a curable liquid silicone composition that fills the spaces between the mold and the unsealed semiconductor device to compression molding under a predetermined molding temperature, wherein said curable liquid silicone composition has viscosity of 90 Pa·s or less at room temperature, a time interval from the moment directly after measurement of a torque with a curometer at the molding temperature to the moment when the torque reached 1 kgf·cm is not less than 1 min., while the time interval during which the torque grows from 1 kgf·cm to 5 kgf·cm is not more than 1 min.

Abstract: The membrane electrode assembly 100 has an electrolyte layer 10, a catalyst layer 20, and a member 15 impregnated with electrolyte which is arranged between the electrolyte layer 10 and the catalyst layer 20. At least part of the peripheral edge portion of the member 15 extends the outside the peripheral edge portions of the electrolyte layer and the catalyst layer 20. With this kind of constitution, it is possible to easily separate the electrolyte layer 10 or the catalyst layer 20 from the member 15 from the extended portion of the member 15. Consequently, it is possible to easily replace the electrolyte layer 10 and the catalyst layer 20.

Abstract: A liquid die bonding agent comprising (A) an organopolysiloxane that has at least 2 alkenyl groups in one molecule, (B) an organopolysiloxane that has at least 2 silicon-bonded hydrogen atoms in one molecule, (C) a hydrosilylation reaction action catalyst, (D) a hydrosilylation reaction inhibitor, and (E) an organic solvent that can dissolve components (A), (B), and (D), that is liquid, and that has a boiling point of 180° C. to 400° C. Also, the preceding liquid die bonding agent that additionally comprises (F) an organosilicon compound-based adhesion promoter.

Abstract: A fuel cell system includes a fuel cell, anode gas pressure adjusting means that adjusts the pressure of an anode gas supplied to the fuel cell, and cathode gas pressure adjusting means that adjusts the pressure of a cathode gas supplied to the fuel cell. The system further includes pressure control means that sets the pressure of the anode gas that is supplied when starting the fuel cell higher than the pressure of the anode gas that is supplied during power generation in the fuel cell, and controls the anode gas pressure adjusting means and the cathode gas pressure adjusting means so that a cathode gas pressure increase is started in accordance with the start of an anode gas pressure increase when the pressure of the anode gas is increased to the set pressure.

Abstract: A method of manufacturing a semiconductor device sealed in a cured silicone body by placing a semiconductor device into a mold and subjecting a curable silicone composition that fills the spaces between said mold and said semiconductor device to compression molding, wherein the curable silicone composition comprises the following components: (A) an organopolysiloxane having at least two alkenyl groups per molecule; (B) an organopolysiloxane having at least two silicon-bonded hydrogen atoms per molecule; (C) a platinum-type catalyst; and (D) a filler, wherein either at least one of components (A) and (B) contains a T-unit siloxane and/or Q-unit siloxane. By the utilization this method, a sealed semiconductor device is free of voids in the sealing material, and a thickness of the cured silicone body can be controlled.

Abstract: A 2-wavelength image sensor has a plurality of uniformly dispersedly arranged visible radiation detectors and a plurality of uniformly dispersedly arranged, uncooled infrared radiation detectors, and a single visible radiation detector configures a visible radiation detecting pixel and four series connected infrared radiation detectors configure a thermal infrared radiation detecting pixel. Consequently a visible image can be four times a thermal image in resolution. Furthermore for an infrared image an area increased four times per pixel to receive light can be achieved. As a result the infrared image can be enhanced in temperature resolution.

Abstract: A 2-wavelength image sensor has a plurality of uniformly dispersedly arranged visible radiation detectors and a plurality of uniformly dispersedly arranged, uncooled infrared radiation detectors, and a single visible radiation detector configures a visible radiation detecting pixel and four series connected infrared radiation detectors configure a thermal infrared radiation detecting pixel. Consequently a visible image can be four times a thermal image in resolution. Furthermore for an infrared image an area increased four times per pixel to receive light can be achieved. As a result the infrared image can be enhanced in temperature resolution.

Abstract: A method of manufacturing a semiconductor device sealed in a cured silicone body by placing an unsealed semiconductor device into a mold and subjecting a curable liquid silicone composition that fills the spaces between the mold and the unsealed semiconductor device to compression molding under a predetermined molding temperature, wherein the curable liquid silicone composition has viscosity of 90 Pa·s or less at room temperature, a time interval from the moment directly after measurement of a torque with a curometer at the molding temperature to the moment when the torque reached 1 kgf·cm being not less than 1 min.

Abstract: An evaporation apparatus includes a deposition unit that deposits a substance to be evaporated from an evaporation source on a substrate, a vacuum tank that defines a space for placing the evaporation source and the substrate and maintains a vacuum state in the space, and an evaporated substance adhering unit that is provided in at least a portion of a wall in the vacuum tank and has a plurality of protrusions protruding in a direction toward the evaporation source at an angle relative to a direction normal to the wall, and to which the evaporated substance is adhered.

Abstract: A method of manufacturing a semiconductor device sealed in a cured silicone body by placing a semiconductor device into a mold and subjecting a curable silicone composition that fills the spaces between said mold and said semiconductor device to compression molding, wherein the curable silicone composition comprises the following components: (A) an organopolysiloxane having at least two alkenyl groups per molecule; (B) an organopolysiloxane having at least two silicon-bonded hydrogen atoms per molecule; (C) a platinum-type catalyst; and (D) a filler, wherein either at least one of components (A) and (B) contains a T-unit siloxane and/or Q-unit siloxane. By the utilization this method, a sealed semiconductor device is free of voids in the sealing material, and a thickness of the cured silicone body can be controlled.

Abstract: A chemical amplifying type positive resist composition having excellent sensitivity and resolution, manifesting no generation of scum is provided, which comprises a resin which has a polymerization unit derived from hydroxystyrene and a polymerization unit derived from 2-ethyl-2-adamantyl (meth)acrylate, and is insoluble or poorly soluble itself in an alkali, but becomes alkali-soluble after dissociation of the above-mentioned acid unstable group by the action of an acid; a radiation sensitive acid generating agent; and polypropylene glycol.

Abstract: A chemical amplification type positive resist composition, which can attain high sensitivity while maintaining high resolution, and comprises (A) a compound of the following formula (I): 1

Abstract: A chemically amplified positive resist composition capable of giving a resist film excellent in adhesion to a substrate; excellent in various resist performance characteristics such as dry etching resistance, sensitivity and resolution; and comprising a resin (X) which, per se, is insoluble or slightly soluble in alkali but becomes soluble in alkali due to an action of acid, and has a polymeric unit (a) derived from 3-hydroxy-1-adamantyl(meth)acrylate and a polymeric unit (b) derived from &bgr;-(meth)acryloyloxy-&ggr;-butyrolactone wherein the lactone ring may optionally be substituted by alkyl; and an acid generating agent (Y).

Abstract: A curable organopolysiloxane composition comprises: (A) an organopolysiloxane with two or more silicon-bonded hydrogen atoms contained in one molecule in an amount not exceeding 0.05 wt. %; (B) an organopolysiloxane with two or more alkenyl groups in one molecule {alkenyl groups of this components are to be in an amount of 0.01 to 1 mole per 1 mole of a silicon-bonded hydrogen atoms contained in said component (A)}; and (C) a hydrosilylation-reaction metal catalyst (with content of metal atoms within the range of 0.01 to 1,000 ppm in terms of weight units). A method of manufacturing a semiconductor device comprises: applying onto the surface of a semiconductor device and curing, the aforementioned curable organopolysiloxane composition.

Abstract: A paste dispensing container comprising a cylindrical container having positioned therein a piston slidable along the walls of the container, a first end closed with a cap to seal paste within the container, a connecting portion at a second end of the container for connection with a pressurized fluid supply, and a leakage preventing cover having an air orifice covering the second end of the container. The paste dispensing container can be vacuum packaged in a gas-impermeable film for shipping and storage to prevent exposure of the paste contained therein to air.

Abstract: A chemical amplifying type positive resist composition comprising (A) a resin becoming alkali-soluble due to the action of an acid, (B) an acid generating agent, (C) a basic compound, and (D) a polyvalent carboxylic acid ester is provided, and it exhibits higher resolution without impairing resist performance such as application ability and sensitivity

Abstract: A curable organopolysiloxane composition comprises: (A) an organopolysiloxane with two or more silicon-bonded hydrogen atoms contained in one molecule in an amount not exceeding 0.05 wt. %; (B) an organopolysiloxane with two or more alkenyl groups in one molecule {alkenyl groups of this components are to be in an amount of 0.01 to 1 mole per 1 mole of a silicon-bonded hydrogen atoms contained in said component (A)}; and (C) a hydrosilylation-reaction metal catalyst (with content of metal atoms within the range of 0.01 to 1,000 ppm in terms of weight units). A method of manufacturing a semiconductor device comprises: applying onto the surface of a semiconductor device and curing, the aforementioned curable organopolysiloxane composition.

Abstract: First, a silicon germanium single-crystalline layer and a silicon single-crystalline layer are formed on a main surface of a bond wafer by epitaxy. The overall surface of the bond wafer is oxidized for forming a silicon oxide layer. Then, a base wafer is bonded to the bond wafer. The bond wafer and the base wafer bonded to each other are heated for reinforcing adhesion therebetween. Then, the bond wafer is removed by plasma etching with chlorine gas while making the silicon germanium single-crystalline layer serve as a stopper. Thereafter the silicon germanium single-crystalline layer is polished by chemical mechanical polishing to have a thickness suitable for forming a device. Thus implemented is a method of manufacturing an SOI substrate by bonding capable of employing a layer having a crystal state with small irregularity for serving as a stopper having selectivity for single-crystalline silicon and effectively using the stopper as a device forming layer.

Abstract: A chemical amplifying type positive resist composition having excellent sensitivity and resolution, manifesting no generation of scum is provided, which comprises a resin which has a polymerization unit derived from hydroxystyrene and a polymerization unit derived from 2-ethyl-2-adamantyl (meth)acrylate, and is insoluble or poorly soluble itself in an alkali, but becomes alkali-soluble after dissociation of the above-mentioned acid unstable group by the action of an acid; a radiation sensitive acid generating agent; and polypropylene glycol.

Abstract: First, a silicon germanium single-crystalline layer and a silicon single-crystalline layer are formed on a main surface of a bond wafer by epitaxy. The overall surface of the bond wafer is oxidized for forming a silicon oxide layer. Then, a base wafer is bonded to the bond wafer. The bond wafer and the base wafer bonded to each other are heated for reinforcing adhesion therebetween. Then, the bond wafer is removed by plasma etching with chlorine gas while making the silicon germanium single-crystalline layer serve as a stopper. Thereafter the silicon germanium single-crystalline layer is polished by chemical mechanical polishing to have a thickness suitable for forming a device. Thus implemented is a method of manufacturing an SOI substrate by bonding capable of employing a layer having a crystal state with small irregularity for serving as a stopper having selectivity for single-crystalline silicon and effectively using the stopper as a device forming layer.