Patents by Inventor Junzhe Geng

Junzhe Geng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210334438
    Abstract: The disclosure develops a multi-scale model that partitions the device into different spatial regions where the high carrier domains are treated as reservoirs in local equilibrium and serve as injectors and receptors of carriers into the neighboring reservoirs through tunneling and thermionic emission. The nonequilibrium Green's function (NEGF) formalism is used to compute the dynamics (states) and the kinetics (filling of states) in the entire extended complex device. The local density of states in the whole device is computed quantum mechanically within a multi-band tight binding Hamiltonian. The model results agree with experimental I-V curves quantitatively.
    Type: Application
    Filed: July 7, 2021
    Publication date: October 28, 2021
    Inventors: Gerhard Klimeck, Tillmann Kubis, Junzhe Geng
  • Patent number: 11093667
    Abstract: The disclosure develops a multi-scale model that partitions the device into different spatial regions where the high carrier domains are treated as reservoirs in local equilibrium and serve as injectors and receptors of carriers into the neighboring reservoirs through tunneling and thermionic emission. The nonequilibrium Green's function (NEGF) formalism is used to compute the dynamics (states) and the kinetics (filling of states) in the entire extended complex device. The local density of states in the whole device is computed quantum mechanically within a multi-band tight binding Hamiltonian. The model results agree with experimental I-V curves quantitatively.
    Type: Grant
    Filed: May 22, 2018
    Date of Patent: August 17, 2021
    Assignee: Purdue Research Foundation
    Inventors: Gerhard Klimeck, Tillmann Kubis, Junzhe Geng
  • Publication number: 20180336302
    Abstract: The disclosure develops a multi-scale model that partitions the device into different spatial regions where the high carrier domains are treated as reservoirs in local equilibrium and serve as injectors and receptors of carriers into the neighboring reservoirs through tunneling and thermionic emission. The nonequilibrium Green's function (NEGF) formalism is used to compute the dynamics (states) and the kinetics (filling of states) in the entire extended complex device. The local density of states in the whole device is computed quantum mechanically within a multi-band tight binding Hamiltonian. The model results agree with experimental I-V curves quantitatively.
    Type: Application
    Filed: May 22, 2018
    Publication date: November 22, 2018
    Inventors: Gerhard Klimeck, Tillmann Kubis, Junzhe Geng