Patents by Inventor Justin Jia-Jen Hwu
Justin Jia-Jen Hwu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9809887Abstract: The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.Type: GrantFiled: February 24, 2016Date of Patent: November 7, 2017Assignee: Seagate Technology LLCInventors: Michael R. Feldbaum, Justin Jia-Jen Hwu, David S. Kuo, Gennady Gauzner, Kim Yang Lee, Li-Ping Wang
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Patent number: 9469525Abstract: A method of self-assembling density multiplied block copolymers (BCP) structures includes applying a block copolymer (BCP) to a feature-imprinted resist layer. The BCP is thermally annealed to laterally segregate the BCP into self-assembled columns of a first polymer block surrounded by a second polymer block.Type: GrantFiled: January 31, 2011Date of Patent: October 18, 2016Assignee: Seagate Technology LLCInventors: XiaoMin Yang, Wei Hu, Zhaoning Yu, Justin Jia-Jen Hwu, Kim Yang Lee
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Publication number: 20160168723Abstract: The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.Type: ApplicationFiled: February 24, 2016Publication date: June 16, 2016Inventors: Michael R. Feldbaum, Justin Jia-Jen Hwu, David S. Kuo, Gennady Gauzner, Kim Yang Lee, Li-Ping Wang
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Patent number: 9330885Abstract: The embodiments disclose a method of stack patterning, including loading a stack into a stationary stack stage, rotating one or more ion beam grid assemblies substantially concentrically aligned with the stationary stack stage to etch the stack and controlling the operation of the one or more ion beam grid assemblies to achieve substantial axial uniformity of the etched stack.Type: GrantFiled: June 30, 2011Date of Patent: May 3, 2016Assignee: Seagate Technology LLCInventors: Michael R. Feldbaum, Justin Jia-Jen Hwu, David S. Kuo, Gennady Gauzner, Li-Ping Wang
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Patent number: 9284649Abstract: The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.Type: GrantFiled: June 30, 2011Date of Patent: March 15, 2016Assignee: Seagate Technology LLCInventors: Michael R. Feldbaum, Justin Jia-Jen Hwu, David S. Kuo, Gennady Gauzner, Kim Yang Lee, Li-Ping Wang
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Patent number: 8946835Abstract: A planarization process may planarize a media disk that has data trenches between data features and larger servo trenches between servo features. A filler material layer is deposited on the media disk and provides step coverage of the trenches. The filler material has data recesses over the data trenches and servo recesses over the servo trenches that must be removed to produce a planar media surface. A first planarization process is used to remove the data recesses and a second planarization process is used to remove the servo recesses.Type: GrantFiled: September 14, 2012Date of Patent: February 3, 2015Assignee: Seagate Technology LLCInventors: Yuan Xu, Wei Hu, Justin Jia-Jen Hwu, Gene Gauzner, Koichi Wago, David Shiao-Min Kuo
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Publication number: 20140308439Abstract: The embodiments disclose a method of protecting patterned magnetic materials of a stack, including depositing a thin continuous film of an inert material that is inert to the magnetic materials of a patterned stack upon which the thin continuous film is being deposited and forming a thin interim interface layer from the thin continuous film to protect top and sidewall areas of non-etched higher relief magnetic islands and magnetic film etched surfaces of the patterned stack from air exposure damage and damage from contact with backfilled materials.Type: ApplicationFiled: June 25, 2014Publication date: October 16, 2014Inventors: Zhaohui Fan, Yuan Xu, Justin Jia-Jen Hwu, Koichi Wago, David Shiao-Min Kuo
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Patent number: 8792201Abstract: Processes include aligning a disc with a template at a location so that the pattern from the template is transferred to the disc in a relative orientation. The relative orientation provides that when the disc with the transferred pattern is finally assembled into a hard disc drive, an inner diameter of the spindle hole of the disc may be abutted against an outer diameter of the disc drive spindle, and the data-containing patterns on the discs will be aligned concentrically with a center of the disc drive spindle. While the data-containing patterns are aligned concentrically with the disc drive spindle, the substrate itself is allowed to be non-concentric.Type: GrantFiled: December 2, 2009Date of Patent: July 29, 2014Assignee: Seagate Technology LLCInventors: Gennady Gauzner, David S. Kuo, Justin Jia-Jen Hwu, Li-Ping Wang, Zhaoning Yu, Kim Yang Lee
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Publication number: 20130337176Abstract: Resist imprinting void reduction method may include sealing a chamber. The chamber may be filled with an ambient inert gas, wherein the inert gas a solubility in a resist layer on a substrate greater than Helium. The method may also include establishing a pressure within the chamber sufficient to cause absorption of the ambient inert gas by the resist layer, and sufficient to suppress evaporation of the resist layer.Type: ApplicationFiled: June 19, 2012Publication date: December 19, 2013Applicant: SEAGATE TECHNOLOGY LLCInventors: Justin Jia-Jen Hwu, Gennady Gauzner, Thomas Larson Greenberg
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Publication number: 20130070370Abstract: A planarization process may planarize a media disk that has data trenches between data features and larger servo trenches between servo features. A filler material layer is deposited on the media disk and provides step coverage of the trenches. The filler material has data recesses over the data trenches and servo recesses over the servo trenches that must be removed to produce a planar media surface. A first planarization process is used to remove the data recesses and a second planarization process is used to remove the servo recesses.Type: ApplicationFiled: September 14, 2012Publication date: March 21, 2013Applicant: SEAGATE TECHNOLOGY LLCInventors: Yuan Xu, Wei Hu, Justin Jia-Jen Hwu, Gene Gauzner, Koichi Wago, David Shiao-Min Kuo
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Publication number: 20130004736Abstract: The embodiments disclose a method of protecting patterned magnetic materials of a stack, including depositing a thin continuous film of an inert material that is inert to the magnetic materials of a patterned stack upon which the thin continuous film is being deposited and forming a thin interim interface layer from the thin continuous film to protect top and sidewall areas of non-etched higher relief magnetic islands and magnetic film etched surfaces of the patterned stack from air exposure damage and damage from contact with backfilled materials.Type: ApplicationFiled: June 30, 2011Publication date: January 3, 2013Applicant: SEAGATE TECHNOLOGY, LLCInventors: Zhaohui Fan, Yuan Xu, Justin Jia-Jen Hwu, Koichi Wago, David Shiao-Min Kuo
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Publication number: 20130001195Abstract: The embodiments disclose a method of stack patterning, including loading a stack into a stationary stack stage, rotating one or more ion beam grid assemblies substantially concentrically aligned with the stationary stack stage to etch the stack and controlling the operation of the one or more ion beam grid assemblies to achieve substantial axial uniformity of the etched stack.Type: ApplicationFiled: June 30, 2011Publication date: January 3, 2013Applicant: SEAGATE TECHNOLOGY, LLCInventors: Michael R. Feldbaum, Justin Jia-Jen Hwu, David S. Kuo, Gennady Gauzner, Li-Ping Wang
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Publication number: 20130004763Abstract: The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.Type: ApplicationFiled: June 30, 2011Publication date: January 3, 2013Applicant: SEAGATE TECHNOLOGY, LLCInventors: Michael R. Feldbaum, Justin Jia-Jen Hwu, David S. Kuo, Gennady Gauzner, Kim Yang Lee, Li-Ping Wang
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Patent number: 8308964Abstract: A planarization process may planarize a media disk that has data trenches between data features and larger servo trenches between servo features. A filler material layer is deposited on the media disk and provides step coverage of the trenches. The filler material has data recesses over the data trenches and servo recesses over the servo trenches that must be removed to produce a planar media surface. A first planarization process is used to remove the data recesses and a second planarization process is used to remove the servo recesses.Type: GrantFiled: September 30, 2010Date of Patent: November 13, 2012Assignee: Seagate Technology LLCInventors: Yuan Xu, Wei Hu, Justin Jia-Jen Hwu, Gene Gauzner, Koichi Wago, David Shiao-Min Kuo
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Publication number: 20120196089Abstract: A method of self-assembling density multiplied block copolymers (BCP) structures includes applying a block copolymer (BCP) to a feature-imprinted resist layer. The BCP is thermally annealed to laterally segregate the BCP into self-assembled columns of a first polymer block surrounded by a second polymer block.Type: ApplicationFiled: January 31, 2011Publication date: August 2, 2012Applicant: SEAGATE TECHNOLOGY LLCInventors: XiaoMin Yang, Wei Hu, Zhaoning Yu, Justin Jia-Jen Hwu, Kim Yang Lee
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Publication number: 20120080402Abstract: A planarization process may planarize a media disk that has data trenches between data features and larger servo trenches between servo features. A filler material layer is deposited on the media disk and provides step coverage of the trenches. The filler material has data recesses over the data trenches and servo recesses over the servo trenches that must be removed to produce a planar media surface. A first planarization process is used to remove the data recesses and a second planarization process is used to remove the servo recesses.Type: ApplicationFiled: September 30, 2010Publication date: April 5, 2012Applicant: Seagate Technology LLCInventors: Yuan Xu, Wei Hu, Justin Jia-Jen Hwu, Gene Gauzner, Koichi Wago, David Shiao-Min Kuo
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Publication number: 20110128647Abstract: Processes include aligning a disc with a template at a location so that the pattern from the template is transferred to the disc in a relative orientation. The relative orientation provides that when the disc with the transferred pattern is finally assembled into a hard disc drive, an inner diameter of the spindle hole of the disc may be abutted against an outer diameter of the disc drive spindle, and the data-containing patterns on the discs will be aligned concentrically with a center of the disc drive spindle. While the data-containing patterns are aligned concentrically with the disc drive spindle, the substrate itself is allowed to be non-concentric.Type: ApplicationFiled: December 2, 2009Publication date: June 2, 2011Applicant: SEAGATE TECHNOLOGY LLCInventors: Gennady Gauzner, David S. Kuo, Justin Jia-Jen Hwu, Li-Ping Wang, Zhaoning Yu, Kim Yang Lee
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Patent number: 7783101Abstract: Methods and systems for determining dimensions of a structure that has a re-entrant profile are disclosed. A method includes imaging at least a portion of a top surface of the structure. Subsequently, a second portion of the structure is imaged from a plurality of perspectives. A third portion of the structure is also imaged from a plurality of perspectives. A dimension of a bottom portion of the structure is determined based on the imaging.Type: GrantFiled: December 15, 2004Date of Patent: August 24, 2010Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventor: Justin Jia-Jen Hwu
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Patent number: 7454828Abstract: A method for measuring recession in a wafer undergoing an asymmetrical ion mill process. The method includes the formation of first and second reference features and possibly a dummy feature. The reference features are constructed such that the location of the midpoint between them is unaffected by the asymmetrical ion mill. By measuring the distance between a portion of the dummy feature and the midpoint between the reference features, the amount of recession of the dummy feature can be measured. The measurement can be used to calculate the relative location of the flare to the read sensor rear edge through overlay information. By keeping the angles of the sides of the features steep (ie. nearly parallel with the direction in which the ion mill is asymmetrical) the amount of material consumed on each of the reference features is substantially equal and the midpoint between the reference features is substantially stationary.Type: GrantFiled: November 23, 2005Date of Patent: November 25, 2008Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Sukhbir Singh Dulay, Justin Jia-Jen Hwu, Thao John Pham
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Patent number: 7323350Abstract: A method of making and using thin film calibration features is described. To fabricate a calibration standard according to the invention raised features are first formed from an electrically conductive material with a selected atomic number. A conformal thin film layer is deposited over the exposed sidewalls of the raised features. The sidewall material is selected to have a different atomic number and is preferably an nonconductive such as silicon dioxide or alumina. After the nonconductive material deposition, a controlled directional RIE process is used to remove the insulator layer deposited on the top and bottom surface of the lines and trenches. The remaining voids between the sidewalls of the raised features are filled with a conductive material. The wafer is then planarized with chemical mechanical planarization (CMP) to expose the nonconductive sidewall material on the surface. The nonconductive sidewall material will be fine lines embedded in conductive material.Type: GrantFiled: September 30, 2004Date of Patent: January 29, 2008Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Sukhbir Singh Dulay, Justin Jia-Jen Hwu, Thao John Pham