Patents by Inventor Justin Jia-Jen Hwu

Justin Jia-Jen Hwu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9809887
    Abstract: The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.
    Type: Grant
    Filed: February 24, 2016
    Date of Patent: November 7, 2017
    Assignee: Seagate Technology LLC
    Inventors: Michael R. Feldbaum, Justin Jia-Jen Hwu, David S. Kuo, Gennady Gauzner, Kim Yang Lee, Li-Ping Wang
  • Patent number: 9469525
    Abstract: A method of self-assembling density multiplied block copolymers (BCP) structures includes applying a block copolymer (BCP) to a feature-imprinted resist layer. The BCP is thermally annealed to laterally segregate the BCP into self-assembled columns of a first polymer block surrounded by a second polymer block.
    Type: Grant
    Filed: January 31, 2011
    Date of Patent: October 18, 2016
    Assignee: Seagate Technology LLC
    Inventors: XiaoMin Yang, Wei Hu, Zhaoning Yu, Justin Jia-Jen Hwu, Kim Yang Lee
  • Publication number: 20160168723
    Abstract: The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.
    Type: Application
    Filed: February 24, 2016
    Publication date: June 16, 2016
    Inventors: Michael R. Feldbaum, Justin Jia-Jen Hwu, David S. Kuo, Gennady Gauzner, Kim Yang Lee, Li-Ping Wang
  • Patent number: 9330885
    Abstract: The embodiments disclose a method of stack patterning, including loading a stack into a stationary stack stage, rotating one or more ion beam grid assemblies substantially concentrically aligned with the stationary stack stage to etch the stack and controlling the operation of the one or more ion beam grid assemblies to achieve substantial axial uniformity of the etched stack.
    Type: Grant
    Filed: June 30, 2011
    Date of Patent: May 3, 2016
    Assignee: Seagate Technology LLC
    Inventors: Michael R. Feldbaum, Justin Jia-Jen Hwu, David S. Kuo, Gennady Gauzner, Li-Ping Wang
  • Patent number: 9284649
    Abstract: The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.
    Type: Grant
    Filed: June 30, 2011
    Date of Patent: March 15, 2016
    Assignee: Seagate Technology LLC
    Inventors: Michael R. Feldbaum, Justin Jia-Jen Hwu, David S. Kuo, Gennady Gauzner, Kim Yang Lee, Li-Ping Wang
  • Patent number: 8946835
    Abstract: A planarization process may planarize a media disk that has data trenches between data features and larger servo trenches between servo features. A filler material layer is deposited on the media disk and provides step coverage of the trenches. The filler material has data recesses over the data trenches and servo recesses over the servo trenches that must be removed to produce a planar media surface. A first planarization process is used to remove the data recesses and a second planarization process is used to remove the servo recesses.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: February 3, 2015
    Assignee: Seagate Technology LLC
    Inventors: Yuan Xu, Wei Hu, Justin Jia-Jen Hwu, Gene Gauzner, Koichi Wago, David Shiao-Min Kuo
  • Publication number: 20140308439
    Abstract: The embodiments disclose a method of protecting patterned magnetic materials of a stack, including depositing a thin continuous film of an inert material that is inert to the magnetic materials of a patterned stack upon which the thin continuous film is being deposited and forming a thin interim interface layer from the thin continuous film to protect top and sidewall areas of non-etched higher relief magnetic islands and magnetic film etched surfaces of the patterned stack from air exposure damage and damage from contact with backfilled materials.
    Type: Application
    Filed: June 25, 2014
    Publication date: October 16, 2014
    Inventors: Zhaohui Fan, Yuan Xu, Justin Jia-Jen Hwu, Koichi Wago, David Shiao-Min Kuo
  • Patent number: 8792201
    Abstract: Processes include aligning a disc with a template at a location so that the pattern from the template is transferred to the disc in a relative orientation. The relative orientation provides that when the disc with the transferred pattern is finally assembled into a hard disc drive, an inner diameter of the spindle hole of the disc may be abutted against an outer diameter of the disc drive spindle, and the data-containing patterns on the discs will be aligned concentrically with a center of the disc drive spindle. While the data-containing patterns are aligned concentrically with the disc drive spindle, the substrate itself is allowed to be non-concentric.
    Type: Grant
    Filed: December 2, 2009
    Date of Patent: July 29, 2014
    Assignee: Seagate Technology LLC
    Inventors: Gennady Gauzner, David S. Kuo, Justin Jia-Jen Hwu, Li-Ping Wang, Zhaoning Yu, Kim Yang Lee
  • Publication number: 20130337176
    Abstract: Resist imprinting void reduction method may include sealing a chamber. The chamber may be filled with an ambient inert gas, wherein the inert gas a solubility in a resist layer on a substrate greater than Helium. The method may also include establishing a pressure within the chamber sufficient to cause absorption of the ambient inert gas by the resist layer, and sufficient to suppress evaporation of the resist layer.
    Type: Application
    Filed: June 19, 2012
    Publication date: December 19, 2013
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Justin Jia-Jen Hwu, Gennady Gauzner, Thomas Larson Greenberg
  • Publication number: 20130070370
    Abstract: A planarization process may planarize a media disk that has data trenches between data features and larger servo trenches between servo features. A filler material layer is deposited on the media disk and provides step coverage of the trenches. The filler material has data recesses over the data trenches and servo recesses over the servo trenches that must be removed to produce a planar media surface. A first planarization process is used to remove the data recesses and a second planarization process is used to remove the servo recesses.
    Type: Application
    Filed: September 14, 2012
    Publication date: March 21, 2013
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Yuan Xu, Wei Hu, Justin Jia-Jen Hwu, Gene Gauzner, Koichi Wago, David Shiao-Min Kuo
  • Publication number: 20130004736
    Abstract: The embodiments disclose a method of protecting patterned magnetic materials of a stack, including depositing a thin continuous film of an inert material that is inert to the magnetic materials of a patterned stack upon which the thin continuous film is being deposited and forming a thin interim interface layer from the thin continuous film to protect top and sidewall areas of non-etched higher relief magnetic islands and magnetic film etched surfaces of the patterned stack from air exposure damage and damage from contact with backfilled materials.
    Type: Application
    Filed: June 30, 2011
    Publication date: January 3, 2013
    Applicant: SEAGATE TECHNOLOGY, LLC
    Inventors: Zhaohui Fan, Yuan Xu, Justin Jia-Jen Hwu, Koichi Wago, David Shiao-Min Kuo
  • Publication number: 20130001195
    Abstract: The embodiments disclose a method of stack patterning, including loading a stack into a stationary stack stage, rotating one or more ion beam grid assemblies substantially concentrically aligned with the stationary stack stage to etch the stack and controlling the operation of the one or more ion beam grid assemblies to achieve substantial axial uniformity of the etched stack.
    Type: Application
    Filed: June 30, 2011
    Publication date: January 3, 2013
    Applicant: SEAGATE TECHNOLOGY, LLC
    Inventors: Michael R. Feldbaum, Justin Jia-Jen Hwu, David S. Kuo, Gennady Gauzner, Li-Ping Wang
  • Publication number: 20130004763
    Abstract: The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.
    Type: Application
    Filed: June 30, 2011
    Publication date: January 3, 2013
    Applicant: SEAGATE TECHNOLOGY, LLC
    Inventors: Michael R. Feldbaum, Justin Jia-Jen Hwu, David S. Kuo, Gennady Gauzner, Kim Yang Lee, Li-Ping Wang
  • Patent number: 8308964
    Abstract: A planarization process may planarize a media disk that has data trenches between data features and larger servo trenches between servo features. A filler material layer is deposited on the media disk and provides step coverage of the trenches. The filler material has data recesses over the data trenches and servo recesses over the servo trenches that must be removed to produce a planar media surface. A first planarization process is used to remove the data recesses and a second planarization process is used to remove the servo recesses.
    Type: Grant
    Filed: September 30, 2010
    Date of Patent: November 13, 2012
    Assignee: Seagate Technology LLC
    Inventors: Yuan Xu, Wei Hu, Justin Jia-Jen Hwu, Gene Gauzner, Koichi Wago, David Shiao-Min Kuo
  • Publication number: 20120196089
    Abstract: A method of self-assembling density multiplied block copolymers (BCP) structures includes applying a block copolymer (BCP) to a feature-imprinted resist layer. The BCP is thermally annealed to laterally segregate the BCP into self-assembled columns of a first polymer block surrounded by a second polymer block.
    Type: Application
    Filed: January 31, 2011
    Publication date: August 2, 2012
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: XiaoMin Yang, Wei Hu, Zhaoning Yu, Justin Jia-Jen Hwu, Kim Yang Lee
  • Publication number: 20120080402
    Abstract: A planarization process may planarize a media disk that has data trenches between data features and larger servo trenches between servo features. A filler material layer is deposited on the media disk and provides step coverage of the trenches. The filler material has data recesses over the data trenches and servo recesses over the servo trenches that must be removed to produce a planar media surface. A first planarization process is used to remove the data recesses and a second planarization process is used to remove the servo recesses.
    Type: Application
    Filed: September 30, 2010
    Publication date: April 5, 2012
    Applicant: Seagate Technology LLC
    Inventors: Yuan Xu, Wei Hu, Justin Jia-Jen Hwu, Gene Gauzner, Koichi Wago, David Shiao-Min Kuo
  • Publication number: 20110128647
    Abstract: Processes include aligning a disc with a template at a location so that the pattern from the template is transferred to the disc in a relative orientation. The relative orientation provides that when the disc with the transferred pattern is finally assembled into a hard disc drive, an inner diameter of the spindle hole of the disc may be abutted against an outer diameter of the disc drive spindle, and the data-containing patterns on the discs will be aligned concentrically with a center of the disc drive spindle. While the data-containing patterns are aligned concentrically with the disc drive spindle, the substrate itself is allowed to be non-concentric.
    Type: Application
    Filed: December 2, 2009
    Publication date: June 2, 2011
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Gennady Gauzner, David S. Kuo, Justin Jia-Jen Hwu, Li-Ping Wang, Zhaoning Yu, Kim Yang Lee
  • Patent number: 7783101
    Abstract: Methods and systems for determining dimensions of a structure that has a re-entrant profile are disclosed. A method includes imaging at least a portion of a top surface of the structure. Subsequently, a second portion of the structure is imaged from a plurality of perspectives. A third portion of the structure is also imaged from a plurality of perspectives. A dimension of a bottom portion of the structure is determined based on the imaging.
    Type: Grant
    Filed: December 15, 2004
    Date of Patent: August 24, 2010
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventor: Justin Jia-Jen Hwu
  • Patent number: 7454828
    Abstract: A method for measuring recession in a wafer undergoing an asymmetrical ion mill process. The method includes the formation of first and second reference features and possibly a dummy feature. The reference features are constructed such that the location of the midpoint between them is unaffected by the asymmetrical ion mill. By measuring the distance between a portion of the dummy feature and the midpoint between the reference features, the amount of recession of the dummy feature can be measured. The measurement can be used to calculate the relative location of the flare to the read sensor rear edge through overlay information. By keeping the angles of the sides of the features steep (ie. nearly parallel with the direction in which the ion mill is asymmetrical) the amount of material consumed on each of the reference features is substantially equal and the midpoint between the reference features is substantially stationary.
    Type: Grant
    Filed: November 23, 2005
    Date of Patent: November 25, 2008
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Sukhbir Singh Dulay, Justin Jia-Jen Hwu, Thao John Pham
  • Patent number: 7323350
    Abstract: A method of making and using thin film calibration features is described. To fabricate a calibration standard according to the invention raised features are first formed from an electrically conductive material with a selected atomic number. A conformal thin film layer is deposited over the exposed sidewalls of the raised features. The sidewall material is selected to have a different atomic number and is preferably an nonconductive such as silicon dioxide or alumina. After the nonconductive material deposition, a controlled directional RIE process is used to remove the insulator layer deposited on the top and bottom surface of the lines and trenches. The remaining voids between the sidewalls of the raised features are filled with a conductive material. The wafer is then planarized with chemical mechanical planarization (CMP) to expose the nonconductive sidewall material on the surface. The nonconductive sidewall material will be fine lines embedded in conductive material.
    Type: Grant
    Filed: September 30, 2004
    Date of Patent: January 29, 2008
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Sukhbir Singh Dulay, Justin Jia-Jen Hwu, Thao John Pham