Patents by Inventor Jyotshna Bhandari

Jyotshna Bhandari has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200203525
    Abstract: A transistor device with a gate electrode in a vertical gate trench is described. The gate electrode includes a silicon gate region and a metal inlay region. The silicon gate region forms at least a section of a sidewall of the gate electrode. The metal inlay region extends up from a lower end of the gate electrode.
    Type: Application
    Filed: December 17, 2019
    Publication date: June 25, 2020
    Inventors: Robert Paul Haase, Jyotshna Bhandari, Heimo Hofer, Ling Ma, Ashita Mirchandani, Harsh Naik, Martin Poelzl, Martin Henning Vielemeyer, Britta Wutte
  • Publication number: 20200111896
    Abstract: A method of forming recess for a trench gate electrode includes forming a trench in a first major surface of a semiconductor substrate, the trench having a base and a side wall extending from the base to the first major surface, forming a first insulating layer on the base and the side wall of the trench, inserting a first conductive material into the trench that at least partially covers the first insulation layer to form a field plate in a lower portion of the trench, applying a second insulating layer to the first major surface and the trench such that the second insulating layer fills the trench and covers the conductive material, removing the second insulating layer from the first major surface and partially removing the second insulating layer from the trench by etching and forming a recess for a gate electrode in the second insulating layer in the trench.
    Type: Application
    Filed: October 8, 2019
    Publication date: April 9, 2020
    Inventors: Thomas Feil, Jyotshna Bhandari, Christoph Gruber, Heimo Hofer, Ravi Keshav Joshi, Olaf Kuehn, Juergen Steinbrenner