Patents by Inventor Kadriye Deniz Bozdag

Kadriye Deniz Bozdag has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Microwave write-assist in orthogonal STT-MRAM
    Patent number: 10255962
    Abstract: Methods and structures useful for magnetoresistive random-access memory (MRAM) are disclosed. The MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device also utilizes an external magnetic field generator, thereby allowing efficient writing of the bit without a concomitant increase in read disturb.
    Type: Grant
    Filed: December 30, 2017
    Date of Patent: April 9, 2019
    Assignee: Spin Memory, Inc.
    Inventors: Mourad El Baraji, Kadriye Deniz Bozdag, Marcin Jan Gajek, Michail Tzoufras
  • AC current write-assist in orthogonal STT-MRAM
    Patent number: 10236048
    Abstract: Methods and structures useful for magnetoresistive random-access memory (MRAM) are disclosed. The MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utilizes an in-plane polarization magnetic layer and a perpendicular MTJ in conjugation with a programming current pulse that comprises an alternating perturbation frequency.
    Type: Grant
    Filed: December 29, 2017
    Date of Patent: March 19, 2019
    Assignee: Spin Memory, Inc.
    Inventors: Michail Tzoufras, Marcin Jan Gajek, Kadriye Deniz Bozdag, Mourad El Baraji
  • Shared oscillator (STNO) for MRAM array write-assist in orthogonal STT-MRAM
    Patent number: 10236047
    Abstract: Methods and structures useful for magnetoresistive random-access memory (MRAM) are disclosed. The MRAM device has plurality of magnetic tunnel junction (MTJ) stack having significantly improved performance of the free layers in the MTJ structures. The MRAM device utilizes a spin torque nano-oscillator (STNO), a metallic bit line and a plurality of orthogonal spin transfer magnetic tunnel junctions (OST-MTJs), each OST-MTJ comprising an in-plane polarizer, and a perpendicular MTJ.
    Type: Grant
    Filed: December 29, 2017
    Date of Patent: March 19, 2019
    Assignee: Spin Memory, Inc.
    Inventors: Eric Michael Ryan, Marcin Jan Gajek, Kadriye Deniz Bozdag, Michail Tzoufras
  • Microwave write-assist in series-interconnected orthogonal STT-MRAM devices
    Patent number: 10229724
    Abstract: Methods and structures useful for magnetoresistive random-access memory (MRAM) are disclosed. The MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device also utilizes a plurality of orthogonal spin transfer magnetic tunnel junction (OST-MTJ) stacks connected in series, with each OST-MTJ stack capable of selective activation by application of an external magnetic field, thereby allowing efficient writing of the bit without a concomitant increase in read disturb.
    Type: Grant
    Filed: December 30, 2017
    Date of Patent: March 12, 2019
    Assignee: Spin Memory, Inc.
    Inventors: Mourad El Baraji, Kadriye Deniz Bozdag, Marcin Jan Gajek, Michail Tzoufras
  • Three-terminal MRAM with ac write-assist for low read disturb
    Patent number: 10199083
    Abstract: Methods and structures useful for magnetoresistive random-access memory (MRAM) are disclosed. The MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device also utilizes a three-terminal structure, thereby allowing efficient writing of the bit without a concomitant increase in read disturb.
    Type: Grant
    Filed: December 29, 2017
    Date of Patent: February 5, 2019
    Assignee: Spin Transfer Technologies, Inc.
    Inventors: Kadriye Deniz Bozdag, Marcin Jan Gajek, Michail Tzoufras, Eric Michael Ryan