Patents by Inventor Kai-Tai Chang

Kai-Tai Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140099779
    Abstract: A method includes forming a hard mask over a substrate, patterning the hard mask to form a first plurality of trenches, and filling a dielectric material into the first plurality of trenches to form a plurality of dielectric regions. The hard mask is removed from between the plurality of dielectric regions, wherein a second plurality of trenches is left by the removed hard mask. An epitaxy step is performed to grow a semiconductor material in the second plurality of trenches.
    Type: Application
    Filed: December 11, 2013
    Publication date: April 10, 2014
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kai-Tai Chang, Yi-Shan Chen, Hsin-Chih Chen, Chih-Hsin Ko, Clement Hsingjen Wann
  • Publication number: 20140099771
    Abstract: A method includes forming a hard mask over a substrate, patterning the hard mask to form a first plurality of trenches, and filling a dielectric material into the first plurality of trenches to form a plurality of dielectric regions. The hard mask is removed from between the plurality of dielectric regions, wherein a second plurality of trenches is left by the removed hard mask. An epitaxy step is performed to grow a semiconductor material in the second plurality of trenches.
    Type: Application
    Filed: December 11, 2013
    Publication date: April 10, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Kai-Tai Chang, Yi-Shan Chen, Hsin-Chih Chen, Chih-Hsin Ko, Clement Hsingjen Wann
  • Patent number: 8629040
    Abstract: A method includes forming a hard mask over a substrate, patterning the hard mask to form a first plurality of trenches, and filling a dielectric material into the first plurality of trenches to form a plurality of dielectric regions. The hard mask is removed from between the plurality of dielectric regions, wherein a second plurality of trenches is left by the removed hard mask. An epitaxy step is performed to grow a semiconductor material in the second plurality of trenches.
    Type: Grant
    Filed: November 16, 2011
    Date of Patent: January 14, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kai-Tai Chang, Yi-Shan Chen, Hsin-Chih Chen, Chih-Hsin Ko, Clement Hsingjen Wann
  • Publication number: 20130187237
    Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductor substrate; an isolation feature formed in the semiconductor substrate; a first active region and a second active region formed in the semiconductor substrate, wherein the first and second active regions extend in a first direction and are separated from each other by the isolation feature; and a dummy gate disposed on the isolation feature, wherein the dummy gate extends in the first direction to the first active region from one side and to the second active region from another side.
    Type: Application
    Filed: January 23, 2012
    Publication date: July 25, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD,
    Inventors: Shao-Ming Yu, Chang-Yun Chang, Chih-Hao Chang, Hsin-Chih Chen, Kai-Tai Chang, Ming-Feng Shieh, Kuei-Liang Lu, Yi-Tang Lin
  • Publication number: 20130122686
    Abstract: A method includes forming a hard mask over a substrate, patterning the hard mask to form a first plurality of trenches, and filling a dielectric material into the first plurality of trenches to form a plurality of dielectric regions. The hard mask is removed from between the plurality of dielectric regions, wherein a second plurality of trenches is left by the removed hard mask. An epitaxy step is performed to grow a semiconductor material in the second plurality of trenches.
    Type: Application
    Filed: November 16, 2011
    Publication date: May 16, 2013
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kai-Tai Chang, Yi-Shan Chen, Hsin-Chih Chen, Chih-Hsin Ko, Clement Hsingjen Wann