Patents by Inventor Kambayashi Hiroshi

Kambayashi Hiroshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8330167
    Abstract: A GaN-based field effect transistor 101 comprises: a substrate 101; a channel layer 104 comprised of p-type GaN-based semiconductor material formed on the substrate 101; an electron supplying layer 106 formed on said channel layer 104 and comprised of GaN-based semiconductor material which has band gap energy greater than that of said channel layer 104; a gate insulating film 111 formed on a surface of said channel layer which was exposed after a part of said electron supplying layer was removed; a gate electrode 112 formed on said gate insulating film; a source electrode 109 and a drain electrode 110 formed so that said gate electrode 112 positions in between them; and a second insulating film 113 formed on said electron supplying layer, which is a different insulating film from said gate insulating film 111 and has electron collapse decreasing effect.
    Type: Grant
    Filed: November 25, 2009
    Date of Patent: December 11, 2012
    Assignee: Furukawa Electric Co., Ltd
    Inventors: Nomura Takehiko, Sato Yoshihiro, Kambayashi Hiroshi, Kaya Shusuke, Iwami Masayuki, Kato Sadahiro
  • Patent number: 8330187
    Abstract: A GaN-based field effect transistor (MOSFET) is comprised of a channel layer comprised of p-type GaN, an electron supply layer, a surface layer having band gap energy smaller than that of the electron supply layer, sequentially laminated on a substrate, and recess section is formed by removing a part of the drift layer, the electron supply layer, and the surface layer down to a depth that reaches to the channel layer. A source electrode and a drain electrode are formed so that the recess section positions between them, a gate insulation film is formed on the surface layer and on inner-surface of the recess section including the channel layer, and a gate electrode is formed on the gate insulating film in the recess section.
    Type: Grant
    Filed: November 30, 2009
    Date of Patent: December 11, 2012
    Assignee: Furukawa Electric Co., Ltd.
    Inventors: Nomura Takehiko, Sato Yoshihiro, Kambayashi Hiroshi, Kaya Shusuke, Iwami Masayuki, Kato Sadahiro
  • Publication number: 20100148184
    Abstract: A GaN-based field effect transistor (MOSFET) is comprised of a channel layer comprised of p-type GaN, an electron supply layer, a surface layer having band gap energy smaller than that of said electron supply layer, sequentially laminated on a substrate, and recess section is formed by removing a part of the drift layer, the electron supply layer, and the surface layer down to a depth that reaches to the channel layer. A source electrode and a drain electrode are formed so that the recess section positions between them, a gate insulation film is formed on the surface layer and on inner-surface of the recess section including the channel layer, and a gate electrode is formed on the gate insulating film in the recess section.
    Type: Application
    Filed: November 30, 2009
    Publication date: June 17, 2010
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Nomura Takehiko, Sato Yoshihiro, Kambayashi Hiroshi, Kaya Shusuke, Iwami Masayuki, Kato Sadahiro
  • Publication number: 20100127275
    Abstract: A GaN-based field effect transistor 101 comprises: a substrate 101; a channel layer 104 comprised of p-type GaN-based semiconductor material formed on the substrate 101; an electron supplying layer 106 formed on said channel layer 104 and comprised of GaN-based semiconductor material which has band gap energy greater than that of said channel layer 104; a gate insulating film 111 formed on a surface of said channel layer which was exposed after a part of said electron supplying layer was removed; a gate electrode 112 formed on said gate insulating film; a source electrode 109 and a drain electrode 110 formed so that said gate electrode 112 positions in between them; and a second insulating film 113 formed on said electron supplying layer, which is a different insulating film from said gate insulating film 111 and has electron collapse decreasing effect.
    Type: Application
    Filed: November 25, 2009
    Publication date: May 27, 2010
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Nomura Takehiko, Sato Yoshihiro, Kambayashi Hiroshi, Kaya Shusuke, Iwami Masayuki, Kato Sadahiro