Patents by Inventor Kanako Yoshioka

Kanako Yoshioka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low-carbon-doped silicon oxide film and damascene structure using same
    Patent number: 7271093
    Abstract: A method of forming an interconnect for a semiconductor device using triple hard layers, comprises: forming a first hard layer serving as an etch stop layer on a metal interconnect-formed dielectric layer; forming a second hard layer on the first hard layer; forming a dielectric layer on the second hard layer; forming a third hard layer on the dielectric layer; forming a hole through the third and second hard layers, the dielectric layer, and the first hard layer; and filling the hole with metal to establish an interconnect. The second and third hard layers are each made of carbon-doped silicon oxide formed from a source gas and a redox gas, while controlling the carbon content in the second hard layer as a function of a flow rate of the redox gas.
    Type: Grant
    Filed: May 24, 2004
    Date of Patent: September 18, 2007
    Assignee: ASM Japan K.K.
    Inventors: Chou San Nelson Loke, Kanako Yoshioka, Kiyoshi Satoh
  • Low-carbon-doped silicon oxide film and damascene structure using same
    Publication number: 20050260850
    Abstract: A method of forming an interconnect for a semiconductor device using triple hard layers, comprises: forming a first hard layer serving as an etch stop layer on a metal interconnect-formed dielectric layer; forming a second hard layer on the first hard layer; forming a dielectric layer on the second hard layer; forming a third hard layer on the dielectric layer; forming a hole through the third and second hard layers, the dielectric layer, and the first hard layer; and filling the hole with metal to establish an interconnect. The second and third hard layers are each made of carbon-doped silicon oxide formed from a source gas and a redox gas, while controlling the carbon content in the second hard layer as a function of a flow rate of the redox gas.
    Type: Application
    Filed: May 24, 2004
    Publication date: November 24, 2005
    Applicant: ASM JAPAN K.K.
    Inventors: Chou Loke, Kanako Yoshioka, Kiyoshi Satoh