Abstract: A semiconductor device includes a substrate, a first stacked film and a second stacked film each including insulating layers and electrode layers alternately provided on the substrate, and columnar portions provided in the insulating layers and electrode layers of the first stacked film, and including charge storage layers and semiconductor layers. The second stacked film further includes an insulator including first and second lower faces, the first lower face is inclined by a first angle to an upper face of one of the electrode layers in the first stacked film, the second lower face is inclined by a second angle to the upper face of the one of the electrode layers in the first stacked film, and the second angle is less than the first angle. The insulating layers and electrode layers in the second stacked film are provided below the first and second lower faces of the insulator.

Abstract: According to one embodiment a substrate treatment apparatus incorporates, into a frozen film, a contaminant adhered to a substrate surface by freezing a liquid film on the surface. The apparatus includes a placement part configured to rotate the substrate, a liquid supply part configured to supply a liquid via a nozzle to the frozen film including the contaminant, a moving part configured to move the nozzle parallel to the substrate surface, and a controller configured to control a rotation of the substrate by the placement part, a supply of the liquid by the liquid supply part, and a movement of the nozzle by the moving part. The controller rotates the substrate by controlling the placement part, supplies the liquid to the frozen film by controlling the liquid supply part, and moves the nozzle from a perimeter edge vicinity to a rotation center vicinity of the substrate by controlling the moving part.

Abstract: According to an embodiment, a substrate processing method includes forming a liquid film on a substrate including a first region provided with a first film on an outermost surface thereof and a second region provided with a second film on an outermost surface thereof, the first film and the second film being different from each other in material. The method further includes forming a solidified film by solidifying the liquid film. The method further includes causing the solidified film on the first region to melt prior to the solidified film on the second region.

Abstract: A substrate processing method includes a process of cooling a substrate to below a freezing point of a processing liquid using a cooling fluid brought into contact with the substrate opposite. While the substrate is cooled to below the freezing point of the processing liquid, a droplet of processing liquid is dispensed onto a surface of the substrate at a specified location of a foreign substance. The droplet then forms a frozen droplet portion at the specified location. The frozen droplet portion is then thawed.

Abstract: A substrate processing method includes a process of cooling a substrate to below a freezing point of a processing liquid using a cooling fluid brought into contact with the substrate opposite. While the substrate is cooled to below the freezing point of the processing liquid, a droplet of processing liquid is dispensed onto a surface of the substrate at a specified location of a foreign substance. The droplet then forms a frozen droplet portion at the specified location. The frozen droplet portion is then thawed.

Abstract: A semiconductor device includes a substrate, a first stacked film and a second stacked film each including insulating layers and electrode layers alternately provided on the substrate, and columnar portions provided in the insulating layers and electrode layers of the first stacked film, and including charge storage layers and semiconductor layers. The second stacked film further includes an insulator including first and second lower faces, the first lower face is inclined by a first angle to an upper face of one of the electrode layers in the first stacked film, the second lower face is inclined by a second angle to the upper face of the one of the electrode layers in the first stacked film, and the second angle is less than the first angle. The insulating layers and electrode layers in the second stacked film are provided below the first and second lower faces of the insulator.

Abstract: A substrate processing method includes a process of cooling a substrate to below a freezing point of a processing liquid using a cooling fluid brought into contact with the substrate opposite. While the substrate is cooled to below the freezing point of the processing liquid, a droplet of processing liquid is dispensed onto a surface of the substrate at a specified location of a foreign substance. The droplet then forms a frozen droplet portion at the specified location. The frozen droplet portion is then thawed.

Abstract: In one embodiment, a method of manufacturing an original plate includes forming a first film on a first substrate, wherein an etching rate of the first film by a chemical solution including hydrofluoric acid is larger than an etching rate of the first substrate by the chemical solution. The method further includes forming a second film on the first film, wherein an etching rate of the second film by the chemical solution is smaller than the etching rate of the first film by the chemical solution. The method further includes etching the first substrate by the chemical solution using the first film and the second film as masks to form, on the first substrate, a first region having a first height, a second region having a second height different from the first height, and a first slope located between the first region and the second region.

Abstract: A substrate processing method includes a process of cooling a substrate to below a freezing point of a processing liquid using a cooling fluid brought into contact with the substrate opposite. While the substrate is cooled to below the freezing point of the processing liquid, a droplet of processing liquid is dispensed onto a surface of the substrate at a specified location of a foreign substance. The droplet then forms a frozen droplet portion at the specified location. The frozen droplet portion is then thawed.

Abstract: A template includes a base, and a protruding portion on the base and having a pattern on an upper surface thereof. A side wall of the protruding portion includes impurities at a surface of the side wall and inwardly of the side wall.

Abstract: A cleaning apparatus for a semiconductor wafer includes: a gas jet device including a gas nozzle which jets a first gas onto the surface of a semiconductor wafer to thin the thickness of a stagnant layer on the surface of the semiconductor wafer; and a two-fluid jet device including a two-fluid nozzle which jets droplet mist onto a region where thickness of the stagnant layer of the semiconductor wafer is thinned, the droplet mist being mixed two-fluid of a liquid and a second gas.

Abstract: A method of manufacturing a semiconductor device includes removing a part of a semiconductor substrate to form a protruding portion and a recess portion in a surface area of the semiconductor substrate, forming a first epitaxial semiconductor layer in the recess portion, forming a second epitaxial semiconductor layer on the protruding portion and the first epitaxial semiconductor layer, removing a first part of the second epitaxial semiconductor layer with a second part of the second epitaxial semiconductor layer left to expose a part of the first epitaxial semiconductor layer, and etching the first epitaxial semiconductor layer from the exposed part of the first epitaxial semiconductor layer to form a cavity under the second part of the second epitaxial semiconductor layer.

Abstract: A cleaning method for a semiconductor wafer with cleaning liquid comprising: cleaning the semiconductor wafer while the temperature of the surface of the semiconductor wafer is from 30 degrees to 50 degrees, the cleaning liquid has lower surface tension and viscosity than water.

Abstract: A cleaning apparatus for a semiconductor wafer includes: a gas jet device including a gas nozzle which jets a first gas onto the surface of a semiconductor wafer to thin the thickness of a stagnant layer on the surface of the semiconductor wafer; and a two-fluid jet device including a two-fluid nozzle which jets droplet mist onto a region where thickness of the stagnant layer of the semiconductor wafer is thinned, the droplet mist being mixed two-fluid of a liquid and a second gas.

Abstract: A substrate processing method that processes a substrate on which a plurality of patterns adjacent to each other are formed, has: supplying a first processing liquid to a principal surface of the substrate that is dry and has the patterns formed thereon to make the first processing liquid adhere to the principal surface of the substrate; and supplying a second processing liquid having a higher surface tension than the first processing liquid to the principal surface of the substrate in the state where the first processing liquid adheres to the principal surface of the substrate to process the principal surface of the substrate with the second processing liquid.

Abstract: A method of manufacturing a semiconductor device includes forming a trench for isolation on a surface of a substrate including a semiconductor substrate, filling the trench with a solution containing a perhydrosilazane polymer by applying the solution on the substrate, converting the solution into a film containing the perhydrosilazane polymer by heating the solution, and converting the film into a silicon dioxide film including heating the film at a first temperature in an atmosphere containing vapor, and heating the film heated at the first temperature at a second temperature lower than the first temperature in an atmosphere containing vapor or in pure water.

Abstract: A method of manufacturing a semiconductor device includes removing a part of a semiconductor substrate to form a protruding portion and a recess portion in a surface area of the semiconductor substrate, forming a first epitaxial semiconductor layer in the recess portion, forming a second epitaxial semiconductor layer on the protruding portion and the first epitaxial semiconductor layer, removing a first part of the second epitaxial semiconductor layer with a second part of the second epitaxial semiconductor layer left to expose a part of the first epitaxial semiconductor layer, and etching the first epitaxial semiconductor layer from the exposed part of the first epitaxial semiconductor layer to form a cavity under the second part of the second epitaxial semiconductor layer.

Abstract: A method of manufacturing a semiconductor device, has applying perhydro polysilazane to a substrate; and immersing at least the surface of said substrate to which perhydro polysilazane is applied in a mixture containing water heated to 120 degrees C. or higher to which ultrasound is applied, thereby modifying the perhydro polysilazane into silicon oxide.

Abstract: A method of manufacturing a semiconductor device includes forming a trench for isolation on a surface of a substrate including a semiconductor substrate, filling the trench with a solution containing a perhydrosilazane polymer by applying the solution on the substrate, converting the solution into a film containing the perhydrosilazane polymer by heating the solution, and converting the film into a silicon dioxide film including heating the film at a first temperature in an atmosphere containing vapor, and heating the film heated at the first temperature at a second temperature lower than the first temperature in an atmosphere containing vapor or in pure water.

Abstract: A semiconductor cleaning apparatus according to the present invention comprises: a particle monitor which measures the number of particles in a processing liquid used in a rinse process after a semiconductor wafer is subjected to a cleaning process by means of the processing liquid; a specific resistance measuring unit which measures a specific resistance of a processing liquid used in the rinse process; and a control unit which determines an end point at which the rinse process is completed on the basis of the number of particles measured by the particle monitor and the specific resistance measured by the specific resistance measuring unit to end the rinse process.