Patents by Inventor Kari Harkonen
Kari Harkonen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230156879Abstract: This disclosure relates to use of group 4 element codoping in a phosphor layer of activator-doped zinc sulfide of a display element, a display element, and a method for manufacturing a display element. The display element (100) comprises a first insulator layer (111), a second insulator layer (112), and a first phosphor layer (121) of activator-group 4 element codoped zinc sulfide between the first insulator layer (111) and the second insulator layer (112). The first phosphor layer (121) has an average atomic percentage of group 4 elements of at least 0.01 atomic percent.Type: ApplicationFiled: April 7, 2021Publication date: May 18, 2023Inventors: Jani Holopainen, Kari Härkönen
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Patent number: 11464087Abstract: A method for manufacturing an inorganic thin film electroluminescent display element comprises forming a layer structure, said forming the layer structure comprising forming a first dielectric layer (11); forming a luminescent layer (12), comprising manganese doped zinc sulfide ZnS:Mn, on the first dielectric layer, and forming a second dielectric layer (13) on the luminescent layer. Each of the first and the second dielectric layers are formed so as to comprise nanolaminate with alternating aluminum oxide Al2O3 and zirconium oxide ZrO2 sub-layers.Type: GrantFiled: August 30, 2017Date of Patent: October 4, 2022Assignee: Lumineq OyInventors: Heli Seppänen, Tommy Turkulainen, Kari Härkönen
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Patent number: 11335766Abstract: A transparent thin film display element (100) with a display region(101), and a transition region (105) having a first edge (106) bordering the display region and a second edge (107) opposite to the first edge, the transparent display element having a layer stack (103) comprises:a first conductor layer (110); a second conductor layer (120); and an emissive layer (130) superposed between the first and the second conductor layers and configured to emit light upon electrical current flowing through the emissive layer between the first and the second conductor layers. At least one layer (120) of a group comprising the first and the second conductor layers and the emissive layer has, in the transition region (105), a first coverage at the first edge (106), a second coverage lower than the first coverage at the second edge (107), and an intermediate coverage lying between the first and the second coverage.Type: GrantFiled: March 22, 2018Date of Patent: May 17, 2022Assignee: Lumineq OyInventors: Pertti Malvaranta, Asta Ollila, Jukka Lammi, Kari Härkönen, Mikko Saikkonen
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Publication number: 20200035777Abstract: A transparent thin film display element (100) with a display region(101), and a transition region (105) having a first edge (106) bordering the display region and a second edge (107) opposite to the first edge, the transparent display element having a layer stack (103) comprises:a first conductor layer (110); a second conductor layer (120); andan emissive layer (130) superposed between the first and the second conductor layers and configured to emit light upon electrical current flowing through the emissive layer between the first and the second conductor layers. At least one layer (120) of a group comprising the first and the second conductor layers and the emissive layer has, in the transition region (105), a first coverage at the first edge (106), a second coverage lower than the first coverage at the second edge (107), and an intermediate coverage lying between the first and the second coverage.Type: ApplicationFiled: March 22, 2018Publication date: January 30, 2020Applicant: BENEQ OYInventors: Pertti MALVARANTA, Asta OLLILA, Jukka LAMMI, Kari HARKONEN, Mikko SAIKKONEN
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Publication number: 20190223268Abstract: A method for manufacturing an inorganic thin film electroluminescent display element comprises forming a layer structure, said forming the layer structure comprising forming a first dielectric layer (11); forming a luminescent layer (12), comprising manganese doped zinc sulfide ZnS:Mn, on the first dielectric layer, and forming a second dielectric layer (13) on the luminescent layer. Each of the first and the second dielectric layers are formed so as to comprise nanolaminate with alternating aluminum oxide Al2O3 and zirconium oxide ZrO2 sub-layers.Type: ApplicationFiled: August 30, 2017Publication date: July 18, 2019Applicant: Beneq OyInventors: Heli SEPPÄNEN, Tommy TURKULAINEN, Kari HÄRKÖNEN
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Patent number: 10111300Abstract: An improved transparent thin film electroluminescent display including a substrate, an active layer capable of emitting a wavelength range of visible light, a viewing side surface and a narrowband reflector reflecting part of the light of the active layer back towards the viewing side surface is disclosed. Said narrowband reflector and viewing side surface are arranged on opposite sides of the active layer. A method for manufacturing an improved transparent thin film electroluminescent display including a narrowband reflector is also disclosed.Type: GrantFiled: March 4, 2016Date of Patent: October 23, 2018Assignee: BENEQ OYInventor: Kari Härkönen
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Publication number: 20180077773Abstract: An improved transparent thin film electroluminescent display including a substrate, an active layer capable of emitting a wavelength range of visible light, a viewing side surface and a narrowband reflector reflecting part of the light of the active layer back towards the viewing side surface is disclosed. Said narrowband reflector and viewing side surface are arranged on opposite sides of the active layer. A method for manufacturing an improved transparent thin film electroluminescent display including a narrowband reflector is also disclosed.Type: ApplicationFiled: March 4, 2016Publication date: March 15, 2018Inventor: Kari Härkönen
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Patent number: 9226362Abstract: An inorganic, transparent thin film electroluminescent display element with a display area having at least one emissive area and at least one non-emissive area, improved in terms of transparency and inconspicuousness is provided, as well as a method for its preparation. The structure according to the invention comprises a substrate (40), a first conducting layer (42), a first insulating layer (45), a luminescent layer (46), a second insulating layer (47), a second conductive layer (43) and a third insulating layer (44) comprising insulating, inorganic material. Emissive and non-emissive areas of the display are rendered optically similar by providing passive film elements (50) at the non-emissive areas, namely by providing conductor material also at these areas when the conductive electrodes connected to a power source for generating the required voltage are deposited at the emissive areas.Type: GrantFiled: June 20, 2013Date of Patent: December 29, 2015Assignee: Beneq OyInventor: Kari Härkönen
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Publication number: 20150189718Abstract: An inorganic, transparent thin film electroluminescent display element with a display area having at least one emissive area and at least one non-emissive area, improved in terms of transparency and inconspicuousness is provided, as well as a method for its preparation. The structure according to the invention comprises a substrate (40), a first conducting layer (42), a first insulating layer (45), a luminescent layer (46), a second insulating layer (47), a second conductive layer (43) and a third insulating layer (44) comprising insulating, inorganic material. Emissive and non-emissive areas of the display are rendered optically similar by providing passive film elements (50) at the non-emissive areas, namely by providing conductor material also at these areas when the conductive electrodes connected to a power source for generating the required voltage are deposited at the emissive areas.Type: ApplicationFiled: June 20, 2013Publication date: July 2, 2015Inventor: Kari Härkönen
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Patent number: 9013018Abstract: A moisture barrier, device or product having a moisture barrier or a method of fabricating a moisture barrier having at least a polymer layer, and interfacial layer, and a barrier layer. The polymer layer may be fabricated from any suitable polymer including, but not limited to, fluoropolymers such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), or ethylene-tetrafluoroethylene (ETFE). The interfacial layer may be formed by atomic layer deposition (ALD). In embodiments featuring an ALD interfacial layer, the deposited interfacial substance may be, but is not limited to, Al2O3, AlSiOx, TiO2, and an Al2O3/TiO2 laminate. The barrier layer associated with the interfacial layer may be deposited by plasma enhanced chemical vapor deposition (PECVD). The barrier layer may be a SiOxNy film.Type: GrantFiled: February 17, 2011Date of Patent: April 21, 2015Assignees: Beneq Oy, U.S. Department of EnergyInventors: Joel W. Pankow, Gary J. Jorgensen, Kent M. Terwilliger, Stephen H. Glick, Nora Isomaki, Kari Harkonen, Tommy Turkulainen
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Patent number: 8367561Abstract: The present invention relates to a method for enhancing uniformity of metal oxide coatings formed by Atomic Layer Deposition (ALD) or ALD-type processes. Layers are formed using alternating pulses of metal halide and oxygen-containing precursors, preferably water, and purging when necessary. An introduction of modificator pulses following the pulses of the oxygen-containing precursor affects positively on layer uniformity, which commonly exhibits gradients, particularly in applications with closely arranged substrates. In particular, improvement in layer thickness uniformity is obtained. According to the invention, alcohols having one to three carbon atoms can be used as the modificator.Type: GrantFiled: July 2, 2008Date of Patent: February 5, 2013Assignee: Beneq OyInventors: Jarmo Maula, Kari Harkonen
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Publication number: 20130009264Abstract: A moisture barrier, device or product having a moisture barrier or a method of fabricating a moisture barrier having at least a polymer layer, and interfacial layer, and a barrier layer. The polymer layer may be fabricated from any suitable polymer including, but not limited to, fluoropolymers such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), or ethylene-tetrafluoroethylene (ETFE). The interfacial layer may be formed by atomic layer deposition (ALD). In embodiments featuring an ALD interfacial layer, the deposited interfacial substance may be, but is not limited to, Al2O3, AlSiOx, TiO2, and an Al2O3/TiO2 laminate. The barrier layer associated with the interfacial layer may be deposited by plasma enhanced chemical vapor deposition (PECVD). The barrier layer may be a SiOxNy film.Type: ApplicationFiled: February 17, 2011Publication date: January 10, 2013Applicants: U.S. DEPARTMENT OF ENERGY, BENEQ OYInventors: Joel W. Pankow, Gary J. Jorgensen, Kent M. Terwilliger, Stephen H. Glick, Nora Isomaki, Kari Harkonen, Tommy Turkulainen
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Publication number: 20110265720Abstract: A reactor is provided for a gas deposition method, in which method the surface of a substrate is subjected to alternate starting material surface reactions. The reactor includes a first chamber, a second chamber mounted inside the first chamber, and heating means for heating the first chamber. The reactor also includes one or more heat transfer elements for equalising temperature differences inside the first chamber.Type: ApplicationFiled: February 11, 2010Publication date: November 3, 2011Applicant: BENEQ OYInventors: Jarmo Maula, Hannu Leskinen, Kari Harkonen
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Publication number: 20110097858Abstract: Embodiments of a transition metal alloy having an n-type or p-type work function that does not significantly shift at elevated temperature. The disclosed transition metal alloys may be used as, or form a part of, the gate electrode in a transistor. Methods of forming a gate electrode using these transition metal alloys are also disclosed.Type: ApplicationFiled: February 12, 2010Publication date: April 28, 2011Inventors: Mark Doczy, Nathan Baxter, Robert S. Chau, Kari Harkonen, Teemu Lang
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Patent number: 7901736Abstract: The invention relates to a multilayer material deposited by ALD. A multi-layer structure of a high refractive index material is deposited on a substrate using ALD at a temperature below about 450° C. Advantageous results are obtained when a high refractive index material A is coated with another material B after a certain thickness of material A has been achieved. Thus, the B barrier layer stops the tendency for material A to crystallize. The amorphous structure gives rise to less optical loss. Further, the different stress nature of materials A and B may be utilized to achieve a final optical material with minimal stress. The thickness of each material B layer is less than that of the adjacent A layer(s). The total effective refractive index of the high refractive index material A+B being shall be greater than 2.20 at a wavelength of 600 nm. Titanium oxide and aluminium oxide are preferred A and B materials. The structure is useful for optical coatings.Type: GrantFiled: December 19, 2005Date of Patent: March 8, 2011Assignee: Planar Systems OyInventors: Jarmo Maula, Kari Härkönen, Anguel Nikolov
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Publication number: 20100167555Abstract: The present invention relates to a method for enhancing uniformity of metal oxide coatings formed by Atomic Layer Deposition (ALD) or ALD-type processes. Layers are formed using alternating pulses of metal halide and oxygen-containing precursors, preferably water, and purging when necessary. An introduction of modificator pulses following the pulses of the oxygen-containing precursor affects positively on layer uniformity, which commonly exhibits gradients, particularly in applications with closely arranged substrates. In particular, improvement in layer thickness uniformity is obtained. According to the invention, alcohols having one to three carbon atoms can be used as the modificator.Type: ApplicationFiled: July 2, 2008Publication date: July 1, 2010Applicant: BENEQ OYInventors: Jarmo Maula, Kari Harkonen
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Publication number: 20080241575Abstract: Methods and associated structures of forming a microelectronic device are described. Those methods may include heating a substrate comprising a patterned metallic region to about 145 C or below in a reaction space, introducing an aluminum co-reactant into the reaction space, wherein an aluminum material is formed on the patterned metallic region, but not on non-metallic regions.Type: ApplicationFiled: March 28, 2007Publication date: October 2, 2008Inventors: Adrein R. Lavoie, Valery Dubin, John Plombon, Kari Harkonen, Arnel M. Fajardo
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Publication number: 20070269595Abstract: A method is provided for reducing or eliminating the leaching of metal from a metal surface comprising copper when a liquid comes in contact with the surface. Such unwanted leaching is effectively controlled by coating the metal surface at least partially with a film comprising titanium and oxygen (e.g., titanium oxide). In preferred embodiments the coating of the metal surface is achieved by chemical vapor deposition, metal organic vapor deposition, or by a sol-gel technique. The method is particularly useful when the metal surface is a plumbing component or an assembly of plumbing components and the liquid is water intended for human consumption.Type: ApplicationFiled: November 27, 2006Publication date: November 22, 2007Applicant: PLANAR SYSTEM OYInventors: Kari Harkonen, Olli Jylha
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Publication number: 20070117383Abstract: A precursor delivery system includes a flow path from a precursor container to a reaction space of a thin film deposition system, such as an atomic layer deposition (ALD) reactor. A staging volume is preferably established between the precursor container and the reaction space for receiving at least one dose of the precursor material from the precursor container, and from which pulses are released toward the reaction space. A pulse control device is preferably interposed between the staging volume and the reaction space. A sensor may sense a physical condition in the staging volume for providing feedback to a controller of the precursor delivery system, for performance monitoring and control.Type: ApplicationFiled: November 28, 2006Publication date: May 24, 2007Applicant: Planar Systems, Inc.Inventors: Bradley Aitchison, Jarmo Maula, Hannu Leskinen, Teemu Lang, Pekka Kuosmanen, Kari Harkonen, Martti Sonninen, Tommy Turkulainen
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Publication number: 20070096163Abstract: Embodiments of a transition metal alloy having an n-type or p-type work function that does not significantly shift at elevated temperature. The disclosed transition metal alloys may be used as, or form a part of, the gate electrode in a transistor. Methods of forming a gate electrode using these transition metal alloys are also disclosed.Type: ApplicationFiled: December 15, 2006Publication date: May 3, 2007Inventors: Mark Doczy, Nathan Baxter, Robert Chau, Kari Harkonen, Teemu Lang