Abstract: Magnetoresistive random access memory (MRAM) is used to provide in-pixel memory circuits for display devices. A memory circuit (25) comprises memory elements, for storing a drive setting, and a read-out circuit, for example a flip-flop circuit (64), for reading-out the stored drive setting. The memory elements comprise two MRAMs (60, 62), each coupled to a respective input of the flip-flop circuit (64). A drive circuit (26) is coupled to the read-out circuit and a pixel display electrode (27) for driving the pixel display electrode (27) dependent upon the read-out drive setting with drive current that does not pass through the MRAMs (60, 62). A display device (1) is provided comprising a plurality of pixels (20) each associated with one such memory circuit (25) and drive circuit (26).

Abstract: An input device (302,316) includes a plurality of magnetic sensors (104,108,112) for measuring the components (106,110,114) of a magnetic field (102) at the position of the input device (302). The magnetic field may be the geomagnetic field of the earth or a magnetic field generated by a local magnet (602). The data of at least two (104,108) of the sensors are used for calculating a first signal (208) for controlling the translation movement of a graphical element (204) on a display (202).

Abstract: A thin film magnetic field sensor with perpendicular axis sensitivity uses either a giant magnetoresistance material element or a spin tunnel junction element. The sensor element has ferromagnetic layers which have strongly different uniaxial anisotropies and/or a modified magnetization curve, achieved by antiferromagnetic exchange coupling with an auxiliary ferromagnetic layer. A strongly miniaturizable sensor has four spin tunnel junction elements connected to form a Wheatstone bridge. The magnetically sensitive element functions equally as well as a laminated flux concentrator, resulting in a low noise single domain configuration. The very simple design also allows easy definition of the fixed magnetization direction of a counter electrode. Very high output voltage combined with very low power is achieved.

Abstract: Magnetoresistive sensor (1) for measuring relative displacements of construction parts (2, 3). A magnetoresistive element (4) is formed on a surface (7) of a substrate (8). A magnet system (5) generates a magnetic field (13) having a component (14) directed parallel to the substrate surface at the area of the magnetoresistive element. Upon the relative displacement of the construction parts, this field component extends at different angles &agr; to the magnetoresistive element and is so large that the magnetoresistive element is always magnetically saturated during the displacement. Upon a relative displacement of the construction parts, the magnetoresistive element describes a path (20, 21) with respect to the magnet system. The sensor is suitable for measuring rotations through angles up to 360° and for measuring large translations.

Abstract: A robust Giant Magneto Resistive effect type multilayer sensor comprising a free and a pinned ferromagnetic layer, which can withstand high temperatures and strong magnetic fields as required in automotive applications. The GMR multi-layer has an asymmetric magneto-resistive curve and enables sensors with complementary output signals so that a Wheatstone bridge is possible. The improvement is obtained by a combination of measures including the use of a combination of an Artificial Anti Ferromagnet as the pinned layer and an IrMn exchange-biasing layer, the latter preferably arranged at the bottom of the layer stack on top of a buffer layer.

Abstract: It is proposed to make thin film magnetic field sensors with perpendicular axis sensitivity, based on a giant magnetoresistance material or a spin tunnel junction, by making use of ferromagnetic layers that have strongly different uniaxial anisotropies and/or have a modified magnetization curve by antiferromagnetic exchange coupling with an auxiliary ferromagnetic layer.

Abstract: Element comprising a substrate (101) having a layer structure (103) bounded by two parallel main faces (105a, 105b) with at least two layers of mutually different magnetical behavior. The layer structure has a zone (109) which, viewed in a direction parallel to the main faces, extends between spaced electric connection areas (107a, 107b). A current-directing means is present in this zone for producing, during current passage, a current component (cp) directed transversely to the layer structure, which means comprises at least one electric conductor (111a, 111b) on at least one of the main faces.

Abstract: A communication system has a primary radio station and a portable radio station. The primary radio station communicates with the portable radio station. The portable radio station is freely three-dimensionally orientable with respect to a fixed coordinate system. The portable radio station has a transceiver, a controllable antenna structure, and a beam directional controller for three-dimensionally controlling a beam radiated by the controllable antenna structure. The portable radio station further has a three-dimensional geometric sensor for three-dimensionally sensing a local magnetic field. The beam is controlled on the basis of the sensed local magnetic field.

Abstract: A magnetic field sensor has a substrate on which a plurality of resistive elements form a double Wheatstone bridge circuit, at least one of the resistive elements in each bridge having a magneto-resistive characteristic. The two bridges are identical except in that, if a given magneto-resistive element in a given branch in one bridge has a positive output polarity, then the corresponding magneto-resistive element in the same branch in the other bridge will have a negative output polarity. By adding the output signals of the two Wheatstone bridges a zero-point offset of the sensor can be determined and eliminated. There is no need to employ the so-called flipping technique employed for that purpose in conventional sensors, which requires increased power consumption.

Abstract: Input apparatus for a data processing system. An input apparatus, for example a mouse or a track ball, comprises a member which is rotatable by manipulation by a user. The rotation causes a change of a magnetic field, which change is detected by a detector. The member in the apparatus in accordance with the invention comprises a non-homogeneous distribution of a soft-magnetic material which, upon rotation, changes a magnetic field externally applied to the member by a magnet.