Abstract: An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of optical transmission (0.001% up to 15% at 157 nm) is obtained by this process.

Abstract: Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions of the invention are advantageously useful with shorter wavelength lithographic processes and/or have minimal residual acid content.

Abstract: An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of optical transmission (0.001% up to 15% at 157 nm) is obtained by this process.

Abstract: Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions of the invention are advantageously useful with shorter wavelength lithographic processes and/or have minimal residual acid content.

Abstract: An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of optical transmission (0.001% up to 15% at 157 nm) is obtained by this process.

Abstract: An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of optical transmission (0.001% up to 15% at 157 nm) is obtained by this process.

Abstract: A lithographic structure and method of fabrication and use thereof having a plurality of layers at least one of which is a an RCHX layer which comprises a material having structural formula R:C:H:X, wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti and combinations thereof and wherein X is not present or is selected from the group consisting of one or more of O, N, S, and F and a layer of an energy active material. The RCHX layers are useful as hardmask layers, anti-reflection layers and hardmask anti-reflection layers. The RCHX layer can be vapor-deposited and patterned by patterning the energy active material and transferring the pattern to the RCHX layer.

Abstract: A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes the problem of fluorine from a fluorine containing dielectric reacting with other materials while maintaining a bulk dielectric material of sufficiently high or original fluorine content to maintain an effective low dielectric constant in semiconductor chip wiring interconnect structures.

Abstract: A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes the problem of fluorine from a fluorine containing dielectric reacting with other materials while maintaining a bulk dielectric material of sufficiently high or original fluorine content to maintain an effective low dielectric constant in semiconductor chip wiring interconnect structures.

Abstract: A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes the problem of fluorine from a fluorine containing dielectric reacting with other materials while maintaining a bulk dielectric material of sufficiently high or original fluorine content to maintain an effective low dielectric constant in semiconductor chip wiring interconnect structures.

Abstract: A lithographic structure and method of fabrication and use thereof having a plurality of layers at least one of which is a an RCHX layer which comprises a material having structural formula R:C:H:X, wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti and combinations thereof and wherein X is not present or is selected from the group consisting of one or more of O, N, S, and F and a layer of an energy active material. The RCHX layers are useful as hardmask layers, anti-reflection layers and hardmask anti-reflection layers. The RCHX layer can be vapor-deposited and patterned by patterning the energy active material and transferring the pattern to the RCHX layer.

Abstract: A lithographic structure and method of fabrication and use thereof having a plurality of layers at least one of which is a an RCHX layer which comprises a material having structural formula R:C:H:X, wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti and combinations thereof and wherein X is not present or is selected from the group consisting of one or more of O, N, S, and F and a layer of an energy active material. The RCHX layers are useful as hardmask layers, anti-reflection layers and hardmask anti-reflection layers. The RCHX layer can be vapor-deposited and patterned by patterning the energy active material and transferring the pattern to the RCHX layer.