Patents by Inventor Katsufumi Kondo
Katsufumi Kondo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11908972Abstract: A semiconductor light-emitting device includes a substrate having a first energy bandgap, a first semiconductor layers on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer. The active layer includes a quantum well layer, and a first barrier layer between the first semiconductor layer and the quantum well layer. The first semiconductor layer has a second energy bandgap wider than the first energy bandgap. The quantum well layer has a third energy bandgap narrower than the first and second energy bandgaps. The second semiconductor layer has a fourth energy bandgap wider than the third energy bandgap. The substrate has a refractive index greater than a refractive index of the first semiconductor layer. The refractive index of the first semiconductor layer is not less than a refractive index of the first barrier layer.Type: GrantFiled: September 3, 2021Date of Patent: February 20, 2024Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Akira Tanaka, Hideto Sugawara, Katsufumi Kondo, Masanobu Iwamoto, Kenji Isomoto, Hiroaki Ootsuka
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Publication number: 20220293817Abstract: A semiconductor light-emitting device includes a substrate having a first energy bandgap, a first semiconductor layers on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer. The active layer includes a quantum well layer, and a first barrier layer between the first semiconductor layer and the quantum well layer. The first semiconductor layer has a second energy bandgap wider than the first energy bandgap. The quantum well layer has a third energy bandgap narrower than the first and second energy bandgaps. The second semiconductor layer has a fourth energy bandgap wider than the third energy bandgap. The substrate has a refractive index greater than a refractive index of the first semiconductor layer. The refractive index of the first semiconductor layer is not less than a refractive index of the first barrier layer.Type: ApplicationFiled: September 3, 2021Publication date: September 15, 2022Inventors: Akira Tanaka, Hideto Sugawara, Katsufumi Kondo, Masanobu Iwamoto, Kenji Isomoto, Hiroaki Ootsuka
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Patent number: 9666761Abstract: A light-emitting device includes a substrate that is capable of transmitting light, a conductive layer that includes a first conductive portion provided on the substrate and a second conductive portion which is provided on the substrate so as to be adjacent to the first conductive portion, The second conductive portion is thinner than the first conductive portion. A light emitting layer is provided on the first conductive portion. A first electrode is provided on the second conductive portion. A second electrode is provided on the light emitting layer. In some embodiments, a backside surface of the substrate may be processed to be optically rough so as to limit internal reflections.Type: GrantFiled: March 4, 2016Date of Patent: May 30, 2017Assignee: Kabushiki Kaisha ToshibaInventors: Katsufumi Kondo, Kenji Fujimoto
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Publication number: 20170077352Abstract: A light-emitting device includes a substrate that is capable of transmitting light, a conductive layer that includes a first conductive portion provided on the substrate and a second conductive portion which is provided on the substrate so as to be adjacent to the first conductive portion, The second conductive portion is thinner than the first conductive portion. A light emitting layer is provided on the first conductive portion. A first electrode is provided on the second conductive portion. A second electrode is provided on the light emitting layer. In some embodiments, a backside surface of the substrate may be processed to be optically rough so as to limit internal reflections.Type: ApplicationFiled: March 4, 2016Publication date: March 16, 2017Inventors: Katsufumi KONDO, Kenji FUJIMOTO
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Patent number: 9472713Abstract: An embodiment has an emission layer, a first electrode having a reflective metal layer, an insulating layer, first and second conductivity type layers, and a second electrode. The insulating layer is provided on the first electrode and has an opening where a portion of the first electrode is provided. The first conductivity type layer is provided between the insulating layer and the emission layer and has bandgap energy larger than that of the emission layer. The second conductivity type layer is provided on the emission layer and has a current diffusion layer and a second contact layer. The second contact layer is not superimposed on the opening of the insulating layer, and a thickness of the current diffusion layer is larger than that of the first contact layer. The second electrode has a pad portion and a thin portion extends from the pad portion onto the second contact layer.Type: GrantFiled: November 18, 2013Date of Patent: October 18, 2016Assignee: Kabushiki Kaisha ToshibaInventors: Koichi Genei, Tokuhiko Matsunaga, Katsufumi Kondo, Shinji Nunotani
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Publication number: 20140248729Abstract: According to one embodiment, a semiconductor device includes a substrate and a stacked body on the substrate via a joining metal layer. The stacked body includes a device portion and a peripheral portion. The device portion includes from a bottommost layer to a topmost layer included in the stacked body. The peripheral portion surrounding and provided around the device portion; the peripheral portion is a portion of the bottommost layer to the topmost layer included in the stacked body and includes a portion of a semiconductor layer in contact with the joining metal layer.Type: ApplicationFiled: May 15, 2014Publication date: September 4, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Akihiro Fujiwara, Takashi Hakuno, Tokuhiko Matsunaga, Kimitaka Yoshimura, Katsufumi Kondo
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Patent number: 8816378Abstract: According to one embodiment, a light emitting element, includes: a semiconductor stacked body including a light emitting layer; a first upper electrode being connected directly to the semiconductor stacked body; at least one second upper electrode extending from the first upper electrode, the at least one second upper electrode being connected to the semiconductor stacked body via a first contact layer; a lower electrode; a transparent conductive layer; an intermediate film containing oxygen provided between the semiconductor stacked body and the transparent conductive layer; a light reflecting layer; and a current-blocking layer, at least one slit being provided selectively in the current-blocking layer as viewed from a direction perpendicular to a major surface of the light emitting layer.Type: GrantFiled: June 27, 2013Date of Patent: August 26, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Shinji Nunotani, Yasuhiko Akaike, Kayo Inoue, Katsufumi Kondo, Tokuhiko Matsunaga
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Patent number: 8759852Abstract: According to one embodiment, a semiconductor device includes a substrate and a stacked body on the substrate via a joining metal layer. The stacked body includes a device portion and a peripheral portion. The device portion includes from a bottommost layer to a topmost layer included in the stacked body. The peripheral portion surrounding and provided around the device portion; the peripheral portion is a portion of the bottommost layer to the topmost layer included in the stacked body and includes a portion of a semiconductor layer in contact with the joining metal layer.Type: GrantFiled: March 3, 2011Date of Patent: June 24, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Akihiro Fujiwara, Takashi Hakuno, Tokuhiko Matsunaga, Kimitaka Yoshimura, Katsufumi Kondo
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Publication number: 20140077221Abstract: An embodiment has an emission layer, a first electrode having a reflective metal layer, an insulating layer, first and second conductivity type layers, and a second electrode. The insulating layer is provided on the first electrode and has an opening where a portion of the first electrode is provided. The first conductivity type layer is provided between the insulating layer and the emission layer and has bandgap energy larger than that of the emission layer. The second conductivity type layer is provided on the emission layer and has a current diffusion layer and a second contact layer. The second contact layer is not superimposed on the opening of the insulating layer, and a thickness of the current diffusion layer is larger than that of the first contact layer. The second electrode has a pad portion and a thin portion extends from the pad portion onto the second contact layer.Type: ApplicationFiled: November 18, 2013Publication date: March 20, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Koichi GENEI, Tokuhiko MATSUNAGA, Katsufumi KONDO, Shinji NUNOTANI
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Publication number: 20130292729Abstract: According to one embodiment, a light emitting element, includes: a semiconductor stacked body including a light emitting layer; a first upper electrode being connected directly to the semiconductor stacked body; at least one second upper electrode extending from the first upper electrode, the at least one second upper electrode being connected to the semiconductor stacked body via a first contact layer; a lower electrode; a transparent conductive layer; an intermediate film containing oxygen provided between the semiconductor stacked body and the transparent conductive layer; a light reflecting layer; and a current-blocking layer, at least one slit being provided selectively in the current-blocking layer as viewed from a direction perpendicular to a major surface of the light emitting layer.Type: ApplicationFiled: June 27, 2013Publication date: November 7, 2013Inventors: Shinji NUNOTANI, Yasuhiko AKAIKE, Kayo INOUE, Katsufumi KONDO, Tokuhiko MATSUNAGA
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Publication number: 20130221378Abstract: An LED manufacturing method includes the steps of forming a first insulator film on a semiconductor layer, forming a laminated body including a mask layer and an electrode on the first insulator film, forming a second insulator film to cover the laminated body and a first region of the first insulator film where a laminated body is not formed, anisotropic etching the second insulator film to expose the top surface of the mask layer and a second region of the first insulator film, exposing the surface of a semiconductor layer by removing the first insulator film while keeping the first insulator film between the laminated body and the semiconductor layer, removing the mask layer, and forming a clear conducting layer on top of the exposed surface of the semiconductor layer and the electrode.Type: ApplicationFiled: September 6, 2012Publication date: August 29, 2013Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Tokuhiko MATSUNAGA, Katsufumi Kondo
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Patent number: 8395172Abstract: According to one embodiment, a light emitting device includes a light emitting layer, a first conductivity type layer, a first electrode, a second conductivity type layer, a current blocking layer and a second electrode. The first conductivity type layer is provided on the light emitting layer. The first electrode is provided on the first conductivity type layer. The second conductivity type layer is provided under the light emitting layer. The current blocking layer is provided in contact with a partial region of a surface of the second conductivity type layer, and has an outer edge protruding from an outer edge of the first electrode. The second electrode is in contact with a surface of the current blocking layer on opposite side from the second conductivity type layer and a region of the surface of the second conductivity type layer not in contact with the current blocking layer.Type: GrantFiled: December 6, 2010Date of Patent: March 12, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Akira Tanaka, Katsufumi Kondo, Tokuhiko Matsunaga
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Patent number: 8384063Abstract: A light emitting device includes a stacked body including at least a light emitting layer made of Inx(AlyGa1-y)1-xP(0?x?1, 0?y?1), a p-type cladding layer made of Inx(AlyGa1-y)1-xP (0?x?1, 0?y?1), and a bonding layer made of a semiconductor; and a substrate in which deviation in a lattice constant at a bonding interface with the bonding layer is larger than deviation in lattice constants between the light emitting layer and the bonding layer. The p-type cladding layer is located more distant from the bonding interface than the light emitting layer, and the p-type cladding layer has a carrier concentration of 0.5×1017 cm?3 or more and 3×1017 cm?3 or less.Type: GrantFiled: January 9, 2012Date of Patent: February 26, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Katsufumi Kondo, Ryo Saeki
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Patent number: 8299480Abstract: A semiconductor light emitting device includes: an upper growth layer including a light emitting layer; a transparent substrate through which a radiant light from the light emitting layer passes; and a foundation layer provided between the upper growth layer and the transparent substrate, the foundation layer having a surface-controlling layer and a bonding layer bonded with the transparent substrate. The surface-controlling layer is made of compound semiconductor including at least Ga and As. The upper growth layer is formed on an upper surface of the surface-controlling layer. A lattice constant difference at an interface between the surface-controlling layer and the upper growth layer is smaller than that at an interface between the bonding layer and the transparent substrate.Type: GrantFiled: February 24, 2009Date of Patent: October 30, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Ryo Saeki, Katsufumi Kondo, Yasuo Idei
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Publication number: 20120119242Abstract: According to one embodiment, a light emitting device includes a support body, a first light emitting portion, a second light emitting portion, and a second reflector. The support body includes a first reflector. The first light emitting portion and the second light emitting portion are provided on the support body and include a light emitting layer. Downward directed light of emission light from the light emitting layer is capable of being reflected upward by the first reflector. The second reflector is interposed between the first light emitting portion and the second light emitting portion, provided on the support body, has a cross-sectional shape expanding downward, and includes a side surface metal layer provided on a side surface of the second reflector.Type: ApplicationFiled: March 21, 2011Publication date: May 17, 2012Applicant: KABUSHIKI KAISHA TOSHIBAInventor: Katsufumi Kondo
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Publication number: 20120104357Abstract: A light emitting device includes a stacked body including at least a light emitting layer made of Inx(AlyGa1-y)1-xP(0?x?1, 0?y?1), a p-type cladding layer made of Inx(AlyGa1-y)1-xP (0?x?1, 0?y?1), and a bonding layer made of a semiconductor; and a substrate in which deviation in a lattice constant at a bonding interface with the bonding layer is larger than deviation in lattice constants between the light emitting layer and the bonding layer. The p-type cladding layer is located more distant from the bonding interface than the light emitting layer, and the p-type cladding layer has a carrier concentration of 0.5×1017 cm?3 or more and 3×1017 cm?3 or less.Type: ApplicationFiled: January 9, 2012Publication date: May 3, 2012Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Katsufumi Kondo, Ryo Saeki
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Patent number: 8115192Abstract: A light emitting device includes a stacked body including at least a light emitting layer made of Inx(AlyGa1-y)1-xP (0?x?1, 0?y?1), a p-type cladding layer made of Inx(AlyGa1-y)1-xP (0?x?1, 0?y?1), and a bonding layer made of a semiconductor; and a substrate in which deviation in a lattice constant at a bonding interface with the bonding layer is larger than deviation in lattice constants between the light emitting layer and the bonding layer. The p-type cladding layer is located more distant from the bonding interface than the light emitting layer, and the p-type cladding layer has a carrier concentration of 0.5×1017 cm?3 or more and 3×1017 cm?3 or less.Type: GrantFiled: May 1, 2009Date of Patent: February 14, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Katsufumi Kondo, Ryo Saeki
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Publication number: 20120018752Abstract: According to one embodiment, a semiconductor device includes a substrate and a stacked body on the substrate via a joining metal layer. The stacked body includes a device portion and a peripheral portion. The device portion includes from a bottommost layer to a topmost layer included in the stacked body. The peripheral portion surrounding and provided around the device portion; the peripheral portion is a portion of the bottommost layer to the topmost layer included in the stacked body and includes a portion of a semiconductor layer in contact with the joining metal layer.Type: ApplicationFiled: March 3, 2011Publication date: January 26, 2012Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Akihiro FUJIWARA, Takashi HAKUNO, Tokuhiko MATSUNAGA, Kimitaka YOSHIMURA, Katsufumi KONDO
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Publication number: 20110291133Abstract: According to one embodiment, a light emitting device includes a light emitting layer, a first conductivity type layer, a first electrode, a second conductivity type layer, a current blocking layer and a second electrode. The first conductivity type layer is provided on the light emitting layer. The first electrode is provided on the first conductivity type layer. The second conductivity type layer is provided under the light emitting layer. The current blocking layer is provided in contact with a partial region of a surface of the second conductivity type layer, and has an outer edge protruding from an outer edge of the first electrode. The second electrode is in contact with a surface of the current blocking layer on opposite side from the second conductivity type layer and a region of the surface of the second conductivity type layer not in contact with the current blocking layer.Type: ApplicationFiled: December 6, 2010Publication date: December 1, 2011Applicant: Kabushiki Kaisha ToshibaInventors: Akira TANAKA, Katsufumi Kondo, Tokuhiko Matsunaga
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Publication number: 20100065813Abstract: A light emitting device includes a stacked body including at least a light emitting layer made of Inx(AlyGa1-y)1-xP (0?x?1, 0?y?1), a p-type cladding layer made of Inx(AlyGa1-y)1-xP (0?x?1, 0?y?1), and a bonding layer made of a semiconductor; and a substrate in which deviation in a lattice constant at a bonding interface with the bonding layer is larger than deviation in lattice constants between the light emitting layer and the bonding layer. The p-type cladding layer is located more distant from the bonding interface than the light emitting layer, and the p-type cladding layer has a carrier concentration of 0.5×1017 cm?3 or more and 3×1017 cm?3 or less.Type: ApplicationFiled: May 1, 2009Publication date: March 18, 2010Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Katsufumi Kondo, Ryo Saeki